MW7IC2425NBR1 [NXP]
Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V;
| 型号： | MW7IC2425NBR1 |
| 厂家： | 
NXP |
| 描述： | Lateral N-Channel RF Power MOSFET, 2450 MHz, 25 W CW, 28 V 局域网 放大器 光电二极管 晶体管 |
| 文件： | 总21页 (文件大小：925K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MW7IC2425N
Rev. 0, 3/2009
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
MW7IC2425NR1
MW7IC2425GNR1
MW7IC2425NBR1
N-Channel Enhancement-Mode Lateral MOSFETs
Designed primarily for CW large-signal output and driver applications at
2450 MHz. Devices are suitable for use in industrial, medical and scientific
applications.
• Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA,
Pout = 25 Watts CW, f = 2450 MHz
Power Gain — 27.7 dB
Power Added Efficiency — 43.8%
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW
Output Power
Features
2450 MHz, 25 W CW, 28 V
LATERAL N-CHANNEL
RF POWER MOSFETs
• Qualified Up to a Maximum of 28 VDD Operation
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function (1)
• Integrated ESD Protection
• Excellent Thermal Stability
CASE 1886-01
TO-270 WB-16
PLASTIC
• 225°C Capable Plastic Package
• RoHS Compliant
MW7IC2425NR1
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
CASE 1887-01
TO-270 WB-16 GULL
PLASTIC
MW7IC2425GNR1
CASE 1329-09
TO-272 WB-16
PLASTIC
MW7IC2425NBR1
GND
V
NC
NC
NC
1
2
3
4
5
16
15
GND
NC
DS1
V
DS1
RF
RF /V
out DS2
in
RF
6
14
RF /V
out DS2
in
7
8
9
10
NC
V
V
GS1
GS2
V
GS1
V
GS2
V
DS1
Quiescent Current
Temperature Compensation
(1)
13
12
NC
GND
V
GND
DS1
11
(Top View)
Note: Exposed backside of the package is
the source terminal for the transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family and to AN1987, Quiescent Current Control
for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977 or AN1987.
© Freescale Semiconductor, Inc., 2009. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +10
32, +0
- 65 to +150
150
Unit
Vdc
Vdc
Vdc
°C
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
V
DS
V
GS
V
DD
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Input Power
T
stg
T
°C
C
(1,2)
T
225
°C
J
P
20
dBm
in
Table 2. Thermal Characteristics (In Freescale Narrowband Test Fixture)
Characteristic
(2,3)
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
(Case Temperature 80°C, P = 25 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 55 mA
= 195 mA
6.1
1.2
out
DQ1
DQ2
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22-A114)
Machine Model (per EIA/JESD22-A115)
Charge Device Model (per JESD22-C101)
1B (Minimum)
A (Minimum)
II (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
1
GS
DS
Stage 1 - On Characteristics
Gate Threshold Voltage
V
V
1.2
—
1.9
2.7
2.7
—
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
(V = 10 Vdc, I = 20 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 55 mA)
(4)
DS
DQ1
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 55 mAdc)
V
10.3
11.2
12.6
(4,5)
DD
DQ1
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
4. Measured in Freescale Narrowband Test Fixture.
5. See Appendix A for functional test measurements and test fixture.
(continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Stage 2 - Off Characteristics
Zero Gate Voltage Drain Leakage Current
Symbol
Min
Typ
Max
Unit
I
I
I
—
—
—
—
—
—
10
1
μAdc
μAdc
μAdc
DSS
DSS
GSS
(V = 65 Vdc, V = 0 Vdc)
DS
GS
Zero Gate Voltage Drain Leakage Current
(V = 28 Vdc, V = 0 Vdc)
DS
GS
Gate-Source Leakage Current
(V = 1.5 Vdc, V = 0 Vdc)
1
GS
DS
Stage 2 - On Characteristics
Gate Threshold Voltage
V
V
1.2
—
1.9
2.7
2.7
—
Vdc
Vdc
Vdc
Vdc
GS(th)
GS(Q)
GG(Q)
DS(on)
(V = 10 Vdc, I = 80 μAdc)
DS
D
Gate Quiescent Voltage
(V = 28 Vdc, I = 195 mAdc)
(1)
DS
DQ2
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 195 mAdc)
V
9.5
0.15
10.5
0.47
11.5
0.8
(1,2)
DD
DQ2
Drain-Source On-Voltage
(V = 10 Vdc, I = 800 mAdc)
V
GS
D
(3)
Stage 2 - Dynamic Characteristics
Output Capacitance
C
oss
—
111
—
pF
(V = 28 Vdc 30 mV(rms)ac @ 1 MHz, V = 0 Vdc)
DS
GS
(4)
(2)
Narrowband Performance Specifications
(In Freescale Narrowband Test Fixture, 50 ohm system) V = 28 Vdc, I
= 55 mA,
DD
DQ1
I
= 195 mA, P = 25 W CW, f = 2450 MHz
DQ2
out
Power Gain
G
25.5
41.5
—
27.7
43.8
-18
30.5
dB
%
ps
Power Added Efficiency
PAE
IRL
—
Input Return Loss
-10
dB
(2)
Functional Tests
(In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 77 mA, I
= 275 mA, P = 4 W Avg., f = 2700 MHz,
DD
DQ1
DQ2 out
3
WiMAX, OFDM 802.16d, 64 QAM / , 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
4
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
G
25.5
15
—
28.5
17
30.5
—
dB
%
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
9
—
dB
dBc
dB
—
-50
-15
-46
-10
—
1. Measured in Freescale Narrowband Test Fixture.
2. See Appendix A for functional test fixture documentation.
3. Part internally matched both on input and output.
4. Measurement made with device in straight lead configuration before any lead forming operation is applied.
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
3
V
V
D2
B1
DD1
28 V
C17
C16
C9
C8
C7
C15
C14
C13
NC
1
2
3
4
5
DUT
NC 16
C12
15
NC
NC
NC
NC
Z13
Z12 Z14
RF
INPUT
RF
OUTPUT
Z1
Z2
Z3
Z4
Z5 Z6
Z7
Z8 Z9 Z10
Z11
14
6
C11
7
8
9
NC
NC
C4
C10
Quiescent Current
Temperature
Compensation
C5
C6
NC
NC
13
12
10
11
C1
V
G1
C2
C3
R4
R1
R5
R6
V
G2
R2
R3
Z1
0.500″ x 0.027″ Microstrip
0.075″ x 0.127″ Microstrip
1.640″ x 0.027″ Microstrip
0.100″ x 0.042″ Microstrip
0.151″ x 0.268″ Microstrip
0.025″ x 0.268″ x 0.056″ Taper
0.100″ x 0.056″ Microstrip
0.306″ x 0.056″ Microstrip
Z9
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z10
Z11
Z12
Z13* 0.338″ x 0.020″ Microstrip
Z14
PCB
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″, ε = 3.48
r
* Line length includes microstrip bends
Figure 3. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Schematic
Table 6. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Designations and Values
Part
Description
47 Ω, 100 MHz Short Ferrite Bead
6.8 pF Chip Capacitors
Part Number
Manufacturer
B1
2743019447
Fair-Rite
C1, C4, C7, C12, C15
C2, C5, C8, C13
C3, C6, C9, C14
C10
ATC600S6R8CT250XT
C0603C103J5RAC
ATC
10 nF Chip Capacitors
Kemet
Murata
ATC
1 μF, 50 V Chip Capacitors
2.4 pF Chip Capacitor
GRM32RR71H105KA01B
ATC600S2R4BT250XT
ATC600S3R3BT250XT
GRM55DR61H106KA88B
CRCW12061202FKEA
CRCW12061001FKEA
C11
3.3 pF Chip Capacitor
ATC
C16, C17
10 μF, 50 V Chip Capacitors
12 KΩ, 1/4 W Chip Resistors
1 KΩ, 1/4 W Chip Resistors
Murata
Vishay
Vishay
R1, R4
R2, R3, R5, R6
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
4
MW7IC2425N
Rev. 1
B1
C16
C12
C15
C14
C17
C9
C13
C8
C7
C4
C5
R6
C11
C10
C1
C2
R4
R5
V
V
C6
G1
G2
R2
R1
R3
C3
Figure 4. MW7IC2425NR1(GNR1)(NBR1) Narrowband Test Circuit Component Layout
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS — NARROWBAND
30
29
28
27
26
25
50
49
48
47
46
45
44
43
42
41
Ideal
P3dB = 44.9 dBm (30.9 W)
40
P1dB = 44.5 dBm (28.05 W)
30
20
10
0
Actual
V
= 28 Vdc
= 55 mA
= 195 mA
DD
DQ1
DQ2
I
I
V
= 28 Vdc, I = 55 mA
DQ1
= 195 mA, f = 2450 MHz
DD
I
DQ2
f = 2450 MHz
1
10
100
13
14
15
16
17
18
19
20
P , INPUT POWER (dBm)
in
P
, OUTPUT POWER (WATTS) CW
out
Figure 5. Power Gain and Power Added Efficiency
versus CW Output Power
Figure 6. CW Output Power versus Input Power
30
50
40
29
V
= 32 V
D1
28
27
26
25
30
20
30 V
28 V
V
= 28 Vdc
= 55 mA
= 195 mA
D2
10
0
I
I
DQ1
DQ2
f = 2450 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 7. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD1
30
29
28
27
26
25
50
28 V
40
30 V
32 V
30
20
10
0
V
= 28 V
D2
30 V
32 V
V
= 28 Vdc
= 55 mA
= 195 mA
D1
I
I
DQ1
DQ2
f = 2450 MHz
0.1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 8. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of VD2
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS — NARROWBAND
30
50
I
varied from
DQ1
45 mA to 65 mA
in 5 mA steps
40
29
28
27
26
25
I
= 65 mA
DQ1
30
20
10
0
60 mA
55 mA
45 mA
50 mA
V
= 28 Vdc
= 195 mA
f = 2450 MHz
DD
I
DQ2
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 9. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ1
29
28
27
26
25
50
40
30
20
10
I
= 235 mA
DQ2
215 mA
195 mA
175 mA
155 mA
I
varied from
DQ2
155 mA to 235 mA
in 20 mA steps
V
= 28 Vdc
= 55 mA
f = 2450 MHz
DD
I
DQ1
1
10
100
P
, OUTPUT POWER (WATTS) CW
out
Figure 10. Power Gain and Power Added Efficiency
versus CW Output Power as a Function of IDQ2
9
10
10
10
8
1st Stage
7
2nd Stage
6
10
10
10
5
4
90
110
130
150
170
190
210
230
250
T , JUNCTION TEMPERATURE (°C)
J
This above graph displays calculated MTTF in hours when the device
is operated at V = 28 Vdc, P = 25 W CW, and PAE = 43.8%.
DD
out
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
Figure 11. MTTF versus Junction Temperature
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
7
Z = 50 Ω
o
Z
load
Z
source
f = 2450 MHz
f = 2450 MHz
V
= 28 Vdc, I
= 55 mA, I
= 195 mA, P = 25 W CW
out
DD
DQ1
DQ2
f
Z
Z
load
W
source
W
MHz
2450
32 - j6.256
6.2 - j1.17
Z
Z
=
=
Test circuit impedance as measured from
gate to ground.
source
load
Test circuit impedance as measured from
drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
Z
source
load
Figure 12. Series Equivalent Source and Load Impedance — Narrowband
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
8
PACKAGE DIMENSIONS
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
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MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
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PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process.
Application Notes
• AN1907: Solder Reflow Attach Method for High Power RF Devices in Plastic Packages
• AN1955: Thermal Measurement Methodology of RF Power Amplifiers
• AN1977: Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family
• AN1987: Quiescent Current Control for the RF Integrated Circuit Device Family
• AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over-Molded Plastic Packages
• AN3789: Clamping of High Power RF Transistors and RFICs in Over-Molded Plastic Packages
Engineering Bulletins
• EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision
Date
Description
0
Mar. 2009
• Initial Release of Data Sheet
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
18
APPENDIX A
MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA
MW7IC2725N
Rev. 1.3
B1
C16
C17
C15
C9
C2
C8
C7
C14
C13
C12
C4
C5
C1
R6
C11
C10
R4
R1
R5
R2
V
V
C6
C3
G1
G2
R3
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
0.500″ x 0.027″ Microstrip
0.075″ x 0.127″ Microstrip
1.640″ x 0.027″ Microstrip
0.100″ x 0.042″ Microstrip
0.151″ x 0.268″ Microstrip
0.025″ x 0.268″ x 0.056″ Taper
0.050″ x 0.056″ Microstrip
0.356″ x 0.056″ Microstrip
Z9
0.040″ x 0.061″ Microstrip
0.020″ x 0.050″ Microstrip
0.050″ x 0.050″ Microstrip
0.050″ x 0.027″ Microstrip
Z10
Z11
Z12
Z13* 0.338″ x 0.020″ Microstrip
Z14
PCB
1.551″ x 0.027″ Microstrip
Rogers R04350B, 0.0133″, ε = 3.48
r
* Line length includes microstrip bends
Figure 1. MW7IC2425NR1(GNR1)(NBR1) Test Circuit Component Layout
Table 1. Electrical Characteristics (T = 25°C unless otherwise noted)
C
Characteristic
Symbol
= 77 mA, I
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 28 Vdc, I
= 275 mA, P = 4 W Avg., f = 2700 MHz,
DD
DQ1
DQ2
out
3
WiMAX, OFDM 802.16d, 64 QAM / , 4 Bursts, 10 MHz Channel Bandwidth, Input Signal PAR = 9.5 dB @ 0.01% Probability on CCDF. ACPR
4
measured in 1 MHz Channel Bandwidth @ 8.5 MHz Offset.
Power Gain
G
25.5
15
—
28.5
17
30.5
—
dB
ps
Power Added Efficiency
PAE
PAR
ACPR
IRL
%
dB
Output Peak-to-Average Ratio @ 0.01% Probability on CCDF
Adjacent Channel Power Ratio
Input Return Loss
9
—
—
-50
-15
-46
-10
dBc
—
dB
(continued)
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
19
APPENDIX A
MW7IC2425NR1/GNR1/NBR1 FUNCTIONAL TEST DATA, FIXTURE AND THERMAL DATA (continued)
Table 1. Electrical Characteristics (T = 25°C unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Stage 1 - On Characteristics
Gate Quiescent Voltage
V
—
2.7
—
Vdc
Vdc
GS(Q)
(V = 28 Vdc, I
= 77 mA)
DS
DQ1
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 77 mAdc, Measured in Functional Test)
V
12.5
15.8
19.5
GG(Q)
DD
DQ1
Stage 2 - On Characteristics
Gate Quiescent Voltage
V
—
11
2.7
14
—
Vdc
Vdc
GS(Q)
(V = 28 Vdc, I
= 275 mAdc)
DS
DQ2
Fixture Gate Quiescent Voltage
(V = 28 Vdc, I = 275 mAdc, Measured in Functional Test)
V
18
GG(Q)
DD
DQ2
Table 2. Thermal Characteristics
Characteristic
Symbol
Value
Unit
Thermal Resistance, Junction to Case
R
θ
JC
°C/W
(Case Temperature 81°C, P = 25 W CW)
Stage 1, 28 Vdc, I
Stage 2, 28 Vdc, I
= 77 mA
= 275 mA
5.5
1.3
out
DQ1
DQ2
MW7IC2425NR1 MW7IC2425GNR1 MW7IC2425NBR1
RF Device Data
Freescale Semiconductor
20
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