MWIC930GNR1 [NXP]
746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-03, WB-16, TO-272, 16 PIN;
| 型号： | MWIC930GNR1 |
| 厂家： | 
NXP |
| 描述： | 746 MHz - 960 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER, ROHS COMPLIANT, PLASTIC, CASE 1329A-03, WB-16, TO-272, 16 PIN 高功率电源 放大器 射频 微波 功率放大器 |
| 文件： | 总20页 (文件大小：689K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Document Number: MWIC930
Rev. 5, 5/2006
Freescale Semiconductor
Replaced by MWIC930NR1(GNR1). There are no form, fit or function changes with this part
replacement. N suffix added to part number to indicate transition to lead-free terminations.
Technical Data
RF LDMOS Wideband Integrated
Power Amplifiers
The MWIC930 wideband integrated circuit is designed for CDMA and
GSM/GSM EDGE applications. It uses Freescale’s newest High Voltage (26 to
28 Volts) LDMOS IC technology and integrates a multi-stage structure. Its
wideband On-Chip integral matching circuitry makes it usable from 790 to
1000 MHz. The linearity performances cover all modulations for cellular
applications: GSM, GSM EDGE, TDMA, N-CDMA and W-CDMA.
MWIC930R1
MWIC930GR1
746-960 MHz, 30 W, 26-28 V
SINGLE N-CDMA, GSM/GSM EDGE
RF LDMOS WIDEBAND INTEGRATED
POWER AMPLIFIERS
Final Application
• Typical Performance @ P1dB: VDD = 26 Volts, IDQ1 = 90 mA, IDQ2
=
240 mA, Pout = 30 Watts P1dB, Full Frequency Band (921-960 MHz)
Power Gain — 30 dB
Power Added Efficiency — 45%
Driver Application
• Typical Single-Carrier N-CDMA Performance: VDD = 27 Volts, IDQ1
90 mA, IDQ2 = 240 mA, Pout = 5 Watts Avg., Full Frequency Band
(865-894 MHz), IS -95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13),
Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01%
Probability on CCDF.
=
CASE 1329-09
TO-272 WB-16
PLASTIC
Power Gain — 31 dB
Power Added Efficiency — 21%
ACPR @ 750 kHz Offset — -52 dBc in 30 kHz Bandwidth
MWIC930R1
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 921 MHz, 30 Watts CW Output
Power
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• On-Chip Matching (50 Ohm Input, DC Blocked, >4 Ohm Output)
• Integrated Quiescent Current Temperature Compensation with
Enable/Disable Function
• On-Chip Current Mirror gm Reference FET for Self Biasing Application (1)
• Integrated ESD Protection
• 200°C Capable Plastic Package
CASE 1329A-03
TO-272 WB-16 GULL
PLASTIC
MWIC930GR1
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
V
V
R
D
2
G
N
D
1
2
3
4
5
G
N
D
1
1
6
5
V
R
G
2
R D 2
R G 2
N
C
V
V
V
D
S
1
V
D
S
1
R
D
1
R
V
F
ou t/
D S 2
R
F
i n
6
1
4
R
F
i n
V / RF
D S 2 o u t
V
R
G
1
7
8
9
V
G S 1
V
G S 2
V
R D 1
N
C
D
1
1 1
0
1
1
3
2
N C
G N D
V
R G1
G
N
(Top View)
V
G S 1
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
T
e
m
p
e
r
a
t
u
r
e
C
o
m
p
e
n
s
a
t
i
o
n
Note: Exposed backside flag is source
terminal for transistors.
V
G S 2
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987/D, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1987.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
Table 1. Maximum Ratings
Rating
Symbol
Value
-0.5, +65
-0.5, +15
-65 to +175
200
Unit
Vdc
Vdc
°C
Drain-Source Voltage
V
DSS
Gate-Source Voltage
V
GS
Storage Temperature Range
Operating Junction Temperature
T
stg
T
J
°C
Table 2. Thermal Characteristics
(1,2)
Characteristic
Thermal Resistance, Junction to Case
Symbol
Value
Unit
R
°C/W
θ
JC
GSM Application
(P = 30 W CW)
out
Stage 1, 26 Vdc, I = 90 mA
5.9
1.4
DQ
Stage 2, 26 Vdc, I = 240 mA
DQ
GSM EDGE Application
(P = 15 W CW)
out
Stage 1, 27 Vdc, I = 90 mA
6.5
1.7
DQ
Stage 2, 27 Vdc, I = 240 mA
DQ
CDMA Application
(P = 5 W CW)
out
Stage 1, 27 Vdc, I = 90 mA
6.5
1.8
DQ
Stage 2, 27 Vdc, I = 240 mA
DQ
Table 3. ESD Protection Characteristics
Test Conditions
Class
Human Body Model
Machine Model
1 (Minimum)
M3 (Minimum)
C2 (Minimum)
Charge Device Model
Table 4. Moisture Sensitivity Level
Test Methodology
Rating
Package Peak Temperature
Unit
Per JESD 22-A113, IPC/JEDEC J-STD-020
3
260
°C
Table 5. Electrical Characteristics (T = 25°C, unless otherwise noted)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) V = 27 Vdc, I
= 90 mA, I = 240 mA, P = 5 W Avg. N-CDMA,
DQ2 out
DD
DQ1
f = 880 MHz, Single-Carrier N-CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Bandwidth @ 750 MHz Offset.
PAR = 9.8 dB @ 0.01% Probability on CCDF
Power Gain
G
28
18
—
31
21
—
—
-9
dB
%
ps
Power Added Efficiency
PAE
IRL
Input Return Loss
(f = 880 MHz)
-12
dB
Adjacent Channel Power Ratio
ACPR
—
-52
-48
dBc
%
Typical Performances (In Freescale Test Fixture) V = 26 Vdc, I
= 90 mA, I
= 240 mA, 840 MHz<Frequency<920 MHz
DD
DQ1
DQ2
(2)
Quiescent Current Accuracy over Temperature
—
—
Stage 1 with 33.2 kΩ Gate Feed Resistors (-30 to 115°C)
Stage 2 with 47.5 kΩ Gate Feed Resistors (-30 to 115°C)
ΔI
ΔI
2.5
2.5
1QT
2QT
Gain Flatness in 80 MHz Bandwidth @ P = 5 W CW
G
—
—
—
—
0.3
0.6
3
—
—
—
—
dB
°
out
F
Deviation from Linear Phase in 80 MHz Bandwidth @ P = 5 W CW
Φ
out
Delay @ P = 5 W CW Including Output Matching
Delay
ns
°
out
Part-to-Part Phase Variation @ P = 5 W CW
ΔΦ
15
out
1. Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
2. Refer to AN1977/D, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1977.
(continued)
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
2
Table 5. Electrical Characteristics (T = 25°C, unless otherwise noted) (continued)
C
Characteristic
Symbol
Min
Typ
Max
Unit
Typical GSM/GSM EDGE Performances (In Freescale GSM/GSM EDGE Test Fixture, 50 οhm system) V = 27 Vdc, I
= 90 mA, I
=
DD
DQ1
DQ2
240 mA, 921 MHz<Frequency<960 MHz
Output Power, 1dB Compression Point
Power Gain @ P = 30 W CW
P1dB
—
—
—
—
—
30
30
—
—
—
—
—
W
dB
%
G
out
ps
Power Added Efficiency @ P = 30 W CW
PAE
IRL
45
out
Input Return Loss @ P = 30 W CW
-12
-30
dB
dBc
out
Intermodulation Distortion
IMD
(15 W, 2-Tone, 100 kHz Tone Spacing)
Intermodulation Distortion
IMD
—
-45
—
dBc
(1 W, 2-Tone, 100 kHz Tone Spacing)
backoff
Gain Flatness in a 40 MHz Bandwidth @ P = 30 W CW
G
—
—
0.3
0.6
—
—
dB
out
F
Deviation from Linear Phase in a 40 MHz Bandwidth @ P = 30 W CW
Φ
°
out
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
3
Z
8
V
D 2
1
2
3
4
5
1
1
6
5
V
D 1
C
3
6
C
5
C
1
5
C
1
2
C9
N
C
Z
7
R
F
P
R
F
O
U
T
U T
I
N
P
U
T
C
Z6
Z
2
Z
3
Z
4
Z5
Z
1
1
4
6
C
1
C2
7
8
9
Z
9
V
V
G 1
R
R
1
2
C
C
1
1
3
4
R
3
C
1
0
C7
N
C
1
3
C 4
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
1
0 NC
Tem
pe
r
a
t
u
r
e
C
o
m
p
e
n
s
a
t
i
o
n
1
1
1
2
G
2
Z
1
0
R
4
C
1
1
C
8
Z1
Z2
0.0438″ x 0.970″ 50 Ω Microstrip
(not including lead pad)
0.234″ x 0.1183″ Microstrip
(including lead pad)
0.1575″ x 0.9379″ Microstrip
0.08425″ x 0.0729″ Microstrip
0.08425″ x 0.5111″ Microstrip
Z6
Z7
Z8
Z9
Z10
PCB
0.0438″ x 0.2009″ Microstrip
0.5274″ x 0.0504″ Microstrip
0.0504″ x 0.250″ Microstrip
0.880″ x 0.0254″ Microstrip
0.0254″ x 0.250″ Microstrip
Z3
Z4
Z5
Rogers 4350, 0.020″, ε = 3.50
r
Figure 3. MWIC930R1(GR1) Test Fixture Schematic
Table 6. MWIC930R1(GR1) Test Fixture Component Designations and Values
Part
Description
15 pF High Q Capacitor
Part Number
ATC600S150JW
Manufacturer
ATC
*C1
*C2
6.8 pF High Q Capacitor - GSM Fixture
8.2 pF High Q Capacitor - CDMA Fixture
ATC600S6R8CW
ATC600S8R2CW
ATC
*C3
5.6 pF High Q Capacitor
47 pF High Q Capacitors
1 μF Chip Capacitors
ATC600S5R6CW
ATC600S470JW
GRM42-2X7R105K050AL
C0603C103J5R
ATC
*C4, C5, C7, C8, C9
C6, C13, C14, C15
C10, C11, C12
R1, R2
ATC
Murata
Kemet
10 nF Chip Capacitors
1 kW, 1/8 W Chip Resistors
1 MW, 1/4 W Chip Resistors
RM73B2AT102J
KOA Speer
KOA Speer
R3, R4
RM73B2BT105J
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
4
V
D
1
C1 5
MWIC930
Rev 0
V
D
2
C
6
C
5
C1 2
R
F
R F
O u tp u t
I
n
p
u
t
C
3
C
9
C
1
C
2
C
7
C
8
C
1
0
R
3
C 11
C 13
C
4
R
1
V
G
1
R
4
C1 4
R
2
V
G
2
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor
signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have
no impact on form, fit or function of the current product.
Figure 4. MWIC930R1(GR1) Test Circuit Component Layout
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−
2
0
5
3
3
3
3
4
3
2
1
T
=
−
3
0 _
C
C
V
P
=
=
=
=
27 V dc
D D
−
2
1
5
W
m
(
A
v
g
.
)
o ut
I
I
f
9
0
A
D Q1
2
5_
C
C
−
−
3
3
0
5
2 40
m
A
D Q2
=
8
80
MH z
Tw
o
−
T
o
n
e
P
E
P
=
3
0
W
3
r
d
O
r
d
e
r
−
4
0
3 0
2 9
2 8
2 7
8
5
_
5
t
h
h
O
r
d
e
r
−
−
−
4
5
5
5
0
5
V
=
=
=
2
7
V
d
c
D D
D Q 1
D Q 2
I
I
f
9
0
4
m
A
7
t
O
r
d
e
r
2
0
m
A
=
8
8
0
M
H
z
0
.
1
1
1
0
1
0
0
0
5
1
0
1
5
2
0
2
5
3
0
3
5
4
0
T
O
N
E
S
P
A
C
I
N
G
(
M
H
z
)
P , O U TP UT P OW E R (WATTS )
o u t
Figure 5. Intermodulation Distortion Products
versus Output Power
Figure 6. Power Gain versus Output Power
3
2
4
3
3
3
3
3
2
2
2
0
8
6
4
2
0
8
6
4
P
=
0
d
B
m
i
n
3
2
2
2
0
8
6
4
T
=
−
3
0
_
C
C
2
5
_
C
C
3
d
B
m
8
5
_
9
1
d
B
m
6
d
B
m
2
d
B
m
m
V
P
=
=
=
=
2
7
V
d
c
D
D
I
I
f
=
=
9
0
4
m
A
3
0
W
m
(
C
W
)
D
Q
1
o
u
t
2
2
0
2
0
m
A
I
I
9
0
A
D Q2
=
2
2
0
D Q 1
D Q 2
1
5
d
B
8
80
M
H
z
24 0 mA
2
2
5
1
0
1
5
2
0
2
5
3
0
3
5
7
00
7
50
8
00
8
50
9
00
9
50
1
0 0 0
V
D D
,
S U P P LY
V
O
L
T
A
GE
(V O
L
T
S)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 7. Power Gain versus Supply Voltage
Figure 8. Power Gain versus Frequency
−
−
−
−
−
1
1
2
2
2
6
−
4
0
V
I
=
=
=
2
7
V
d
c
V
I
=
=
=
2
7
V
d
c
D
D
D
D
−
−
4
2
4
9
0
4
m
A
9
0
4
m
A
D Q 1
D Q 2
D Q1
D Q2
T
=
8
5
_
C
8
0
2
4
C
4
I
2
0
m
A
I
f
2
0
m
A
T
=
8
5
_
C
C
f
=
8
8
0
M
H
z
I
=
8
8
0
M
H
z
−
−
4
6
8
9
−
C
h
a
n
n
e
l
S
−
9
5
C
D
M
A
4
2
5
_
C
−
−
5
0
2
2
5
_
C
−
3
0
_
C
5
−
−
5
4
6
−
3
0
_
C
5
−
2
6
8
−
5
8
0
−
2
−
6
0
5
1
0
1
5
2
0
2
5
3
0
3
5
4
0
0
1
2
3
4
5
6
7
8
9
1
0
P
ou t
,
O
U
T
P
U
T
P
O
W
E
R
(
W
A
T
T
S
)
P , O U TP UT P OW E R (WATTS )
o u t
Figure 9. Input Return Loss versus Output Power
Figure 10. Adjacent Channel Power Ratio
versus Output Power
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
6
TYPICAL CHARACTERISTICS
5
5
4
5
0
5
5 8
5 6
5 4
5 2
5 0
4 8
4 6
4 4
4 2
4 0
T
=
−
3
0 _
C
C
T
=
−
3
0 _
C
C
2
8
5_
5_
C
C
2
8
5_
C
C
5_
4
3
3
2
0
5
0
5
V
I
=
=
=
2
7
V
d c
V
P
I
=
=
=
=
2 7 Vd c
D
D
D
D
2 0
1 5
1 0
9
0
m
A
3
0
W
m
(C
W
)
D Q1
D Q2
o u t
I
f
2
4
0
m A
9
0
A
D Q 1
D Q 2
=
8
8
0
M
H
z
I
2
4 0
m
A
0
5
1
0
1
5
2
0
2
5
3
0
3
5
4
0
7
00
7
50
8
0
0
8
50
9
00
9
5
0
1
0
00
P
o ut
,
O UT PU T
P O WE R
(
W
A
T
T
S
)
f
,
F
R
E
Q
U
E
N
C
Y
(
M
H
z
)
Figure 11. Power Added Efficiency versus
Output Power
Figure 12. Power Added Efficiency versus
Frequency
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
7
Z
= 50 Ω
o
Z
lo a d
f = 9 60 M Hz
f
=
7
4
0
M
H
z
1
f = 7 40 MH z
Z
i n
f = 9 6 0 M Hz
V
D D
=
27
Vdc ,
I
=
9
0
m A,
I
=
2 4 0
m A ,
P
o u t
= 5 W Av g.
D
Q
1
D
Q
2
f
Z
in
Z
load
MHz
Ω
Ω
740
760
780
800
820
840
860
880
900
920
940
960
26.61 - j3.68
26.88 - j0.53
28.22 + j2.21
30.57 + j4.31
33.79 + j5.53
37.83 + j5.30
41.92 + j3.42
45.58 - j0.40
47.77 - j5.84
47.83 - j12.15
45.55 - j18.05
41.58 - j22.64
4.28 + j2.99
4.37 + j2.91
4.39 + j2.79
4.34 + j2.64
4.21 + j2.54
4.06 + j2.52
3.90 + j2.58
3.73 + j2.70
3.59 + j2.93
3.43 + j3.17
3.28 + j3.44
3.13 + j3.75
Z
=
=
Device input impedance as measured from
RF input to ground.
in
Z
load
Test circuit impedance as measured
from drain to ground.
O
u
t
p
u
t
D
U
e
vi ce
d e r Te s t
M i
Ne t wo rk
a
t
c
h
n
g
n
Z
Z
in
load
Figure 13. Series Equivalent Input and Load Impedance
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
8
DRIVER/PRE-DRIVER PERFORMANCE
Z
8
V
D 2
1
2
3
4
5
1
1
6
5
V
D 1
C
3
6
C
5
C
1
5
C
1
2
C9
N
C
Z
7
R
F
P
R
F
O
U
T
U
T
I
N
P
U
T
C
Z
6
Z
2
Z
3
Z
4
Z
5
Z
1
1
4
6
C
1
C
2
7
8
9
Z
9
V
V
G
1
R
R
1
2
C
C
1
1
3
4
R
3
C
1
0
C
7
N
C
1
3
C
4
Q
u
i
e
s
c
e
n
t
C
u
r
r
e
n
t
1
0
N
C
T
e
m
p
e
r
a
t
u
r
e
C
o
m
p
e
n
s
a
t
i
o
n
1
1
1
2
G 2
Z1 0
R
4
C
11
C8
Z1
Z2
0.0438″ x 0.970″ 50 Ω Microstrip
(not including lead pad)
0.234″ x 0.1183″ Microstrip
(including lead pad)
0.1575″ x 0.9379″ Microstrip
0.08425″ x 0.0729″ Microstrip
0.08425″ x 0.5111″ Microstrip
Z6
Z7
Z8
Z9
Z10
PCB
0.0438″ x 0.2009″ Microstrip
0.5274″ x 0.0504″ Microstrip
0.0504″ x 0.250″ Microstrip
0.880″ x 0.0254″ Microstrip
0.0254″ x 0.250″ Microstrip
Z3
Z4
Z5
Rogers 4350, 0.020″, ε = 3.50
r
Figure 14. MWIC930R1(GR1) Test Fixture Schematic —
Alternate Characterization for Driver/Pre-Driver Performance
Table 7. MWIC930R1(GR1) Test Fixture Component Designations and Values —
Alternate Characterization for Driver/Pre-Driver Performance
Part
Description
12 pF High Q Capacitor
Part Number
ATC600S120JW
Manufacturer
ATC
*C1
*C2
*C3
8.2 pF High Q Capacitor - CDMA Fixture
5.6 pF High Q Capacitor
ATC600S8R2CW
ATC600S5R6CW
ATC600S470JW
GRM42-2X7R105K050AL
C0603C103J5R
ATC
ATC
*C4, C5, C7, C8, C9
C6, C13, C14, C15
C10, C11, C12
R1, R2
47 pF High Q Capacitors
1 μF Chip Capacitors
ATC
Murata
Kemet
KOA Speer
KOA Speer
10 nF Chip Capacitors
1 kW, 1/8 W Chip Resistors
1 MW, 1/4 W Chip Resistors
RM73B2AT102J
R3, R4
RM73B2BT105J
* For output matching and bypass purposes, it is strongly recommended to use these exact capacitors.
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
9
TYPICAL CHARACTERISTICS
DRIVER/PRE-DRIVER PERFORMANCE
−
6
0
1
−
6
A
C
P
e
R
−
−
6
6
2
3
S
y
s t
m
Noi s e F loo r
V
=
=
2 7 V d c
D
D
I
f
1 0 5
m A
,
I
=
,
2
3
0
m
A
D Q 1
=
D Q 2
8
8
0
M
H
z
−
6
4
5
N
−
C
D
M
A
I
S
−
9
5
P
i
l
o
t
S
y
n
c
,
P
a
g
i
n
g
,
T
r
a
f
f
i
c
C
o
d
e
s
8
T
h
r
o
u
g
h
13
−
6
2
0
2
2
2
4
2
6
2
8
3
0
P
o u t
,
O UT P UT
PO W ER
(d Bm )
Figure 15. Single-Carrier N-CDMA ACPR
versus Output Power
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
10
Z
= 50 Ω
o
f
=
9
6
0
M Hz
Z
i n
f
= 74 0 MH z
f
= 7 4 0 M Hz
Z
lo a d
f
=
960
M
H
z
V
D D
=
27
Vd c,
I
=
1 0 5
m
A
,
I
=
2 3 0
mA ,
P
o u t
= 5 W Av g.
D Q 1
D
Q
2
f
Z
in
Z
load
MHz
Ω
Ω
740
760
780
800
820
840
860
880
900
920
940
960
53.944 + j6.745
54.452 + j7.112
2.535 + j1.662
2.602 + j1.080
2.688 + j0.548
2.659 + j0.064
2.615 + j0.329
2.568 + j0.450
2.494 + j0.620
2.444 + j0.650
2.440 + j0.689
2.134 + j0.930
2.155 + j0.835
2.095 + j1.235
55.006 + j7.440
55.549 + j7.656
55.604 + j7.855
55.190 + j7.835
55.110 + j7.410
55.752 + j4.763
45.606 + j5.832
49.206 + j9.284
49.939 + j9.030
50.088 + j8.752
Z
Z
=
=
Device input impedance as measured from
RF input to ground.
in
Test circuit impedance as measured
from drain to ground.
load
O
u
t
p
u
t
D
U
e
vice
d e r Te s t
M i
Ne t wo rk
a
t
c
h
n
g
n
Z
Z
in
load
Figure 16. Series Equivalent Input and Load Impedance —
Alternate Characterization for Driver/Pre-Driver Performance
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
11
NOTES
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
12
NOTES
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
13
PACKAGE DIMENSIONS
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
14
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
15
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
16
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
17
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
18
MWIC930R1 MWIC930GR1
RF Device Data
Freescale Semiconductor
19
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Document Number: MWIC930
Rev. 5, 5/2006
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