MX0912B251Y,114 [NXP]
MX0912B251Y;
| 型号： | MX0912B251Y,114 |
| 厂家： | 
NXP |
| 描述： | MX0912B251Y 局域网 放大器 CD 晶体管 |
| 文件： | 总12页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
MX0912B251Y
NPN microwave power transistor
1997 Feb 19
Product specification
Supersedes data of November 1994
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
FEATURES
PINNING - SOT439A
PIN
• Interdigitated structure; high emitter efficiency
DESCRIPTION
• Diffused emitter ballasting resistors providing excellent
current sharing and withstanding a high VSWR
1
2
3
collector
emitter
• Gold metallization realizes very stable characteristics
and excellent lifetime
base connected to flange
• Multicell geometry gives good balance of dissipated
power and low thermal resistance
• Input and output matching cell allows an easier design
of circuits.
1
olumns
c
APPLICATIONS
b
Intended for use in common base class C broadband
pulse power amplifier from 960 to 1215 MHz for TACAN
application.
3
3
e
2
MAM045
Top view
DESCRIPTION
NPN silicon planar epitaxial microwave power transistor in
a SOT439A metal ceramic flange package, with base
connected to flange. It is mounted in common base
configuration, and specified in class C.
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
Microwave performance up to Tmb = 25 °C in a common base class C broadband amplifier.
MODE OF
OPERATION
f
VCC
(V)
PL
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(Ω)
(GHz)
Class C
tp = 10 µs; δ = 10%
0.960 to 1.215
50
>235
>7
>42
see Figs 7 and 8
WARNING
Product and environmental safety - toxic materials
This product contains beryllium oxide. The product is entirely safe provided that the BeO slab is not damaged.
All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.
1997 Feb 19
2
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
65
UNIT
VCBO
VCES
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
collector-emitter voltage
emitter-base voltage
collector current
open emitter
RBE = 0 Ω
−
−
−
−
−
−
V
60
20
3
V
V
V
A
W
open base
open collector
tp ≤ 10 µs; δ ≤ 10%
15
690
Ptot
total power dissipation
(peak power)
Tmb = 75 °C; tp ≤ 10 µs; δ ≤ 10%
Tstg
Tj
storage temperature
−65
−
+200
200
°C
°C
°C
operating junction temperature
soldering temperature
Tsld
t ≤ 10 s; note 1
−
235
Note
1. Up to 0.2 mm from ceramic.
MGL041
1000
handbook, halfpage
P
tot
(W)
800
600
400
200
0
−
50
0
100
200
T
(°C)
mb
tp = 10 µs; δ = 10%; Ptot max = 690 W.
Fig.2 Maximum power dissipation derating as a
function of mounting base temperature.
1997 Feb 19
3
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
THERMAL CHARACTERISTICS
Tj = 125 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MAX.
UNIT
Rth j-mb
Rth mb-h
Zth j-h
thermal resistance from junction to mounting base CW
1.9
0.2
K/W
K/W
K/W
thermal resistance from mounting base to heatsink CW; note 1
thermal impedance from junction to heatsink tp = 10 µs; δ = 10%
notes 1 and 2
0.28
Notes
1. See “Mounting recommendations in the General part of handbook SC19a”.
2. Equivalent thermal impedance under nominal pulse microwave operating conditions.
CHARACTERISTICS
Tmb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
CONDITIONS
MAX.
UNIT
ICBO
VCB = 65 V; IE = 0
100
10
mA
mA
mA
mA
V
CB = 50 V; IE = 0
ICES
IEBO
collector cut-off current
emitter cut-off current
VCE = 60 V; RBE = 0 100
VEB = 1.5 V; IC = 0
1
APPLICATION INFORMATION
Microwave performance up to Tmb = 25 °C measured in the test jig as shown in Fig.6 and working in class C broadband
mode in pulse; note 1.
f
VCC
PL
(W)
Gpo
(dB)
ηC
(%)
Zi/ZL
(Ω)
MODE OF OPERATION
Class C;
(GHz)
(V)(2)
0.960 to 1.215
50
>235
>7
>42
see Figs 7 and 8
tp = 10 µs; δ = 10%
typ. 275
typ. 7.4
typ. 47
tp = 300 µs; δ = 10%;
1.03 to 1.09
50
typ. 280
typ. 8
typ. 48
see Fig.5
Notes
1. Operating conditions and performance for other pulse formats can be made available on request.
2. VCC during pulse.
1997 Feb 19
4
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
MGL042
MGL043
300
50
handbook, halfpage
handbook, halfpage
P
L
η
C
(W)
(%)
250
45
200
0.95
40
0.95
1.05
1.15
1.25
1.05
1.15
1.25
f (GHz)
f (GHz)
VCC = 50 V; tp = 10 µs; δ = 10%.
VCC = 50 V; tp = 10 µs; δ = 10%.
Fig.4 Collector efficiency as a function of
Fig.3 Load power as a function of frequency.
(In broadband test circuit as shown in Fig.6)
frequency. (In broadband test circuit as
shown in Fig.6)
1997 Feb 19
5
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
1 µs
1 µs
300 µs
MGK066
3 ms
Fig.5 Pulse definition.
List of components
COMPONENT
DESCRIPTION
VALUE
DIMENSIONS
CATALOGUE NO.
L1, L2
0.65 mm diameter copper wire
−
−
total length = 12 mm;
height of loop = 9 mm
−
−
L3
4 turns 0.65 mm diameter
copper wire
int. diameter 3 mm;
L = 5 mm
C1
DC block
100 pF
ATC, ref. 100A101KP50X
C2
tantalum capacitor
10 µF; 50 V
470 µF; 63 V
C3
electrolytic capacitor
feedthrough bypass capacitor
variable gigatrim capacitor
C4
Erie, ref. 1250-003
Tekelec, ref. 729.1
C5, C6
0.8 to 8 pF
1997 Feb 19
6
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
30
30
1 2 1
5
5
3
12
6
2
6
3
8
3
3
3
5
40
40
0.635
0.635
3
2.5
5
9
11
22
22
+V
C3
CC
−V
CC
C4
L1
L2
L3
C1
4.5
5
C5
C6
MGK068
Dimensions in mm.
Substrate: Epsilam 10.
Thickness: 0.635 mm.
Permittivity: εr = 10.
Fig.6 Broadband test circuit.
7
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
1
0.5
2
0.960 GHz
0.2
5
10
1.215 GHz
1
+ j
− j
0.2
0.5
2
5
10
0
∞
10
5
0.2
2
0.5
MGL039
1
VCC = 50 V; Zo = 5 Ω; PL = 235 W.
Fig.7 Input impedance as a function of frequency associated with optimum load impedance.
1
0.5
2
0.2
5
10
+ j
− j
0.2
0.5
1
0.960 GHz
1
2
5
10
0
∞
10
5
0.2
1.215 GHz
2
0.5
MGL040
VCC = 50 V; Zo = 5 Ω; PL = 235 W.
Fig.8 Optimum load impedance as a function of frequency associated with input impedance.
8
1997 Feb 19
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
PACKAGE OUTLINE
12.85 max
0.15 max
6
max
3.3
2.9
1.6 max
3
23 max
seating plane
3.7
max
2.7
min
1
9.85
max
10.3
10.0
3.3
2.7
min
2
MBC881
8.25
16.5
Dimensions in mm.
Torque on screws: max. 0.4 Nm.
Recommended screw: M3.
Recommended pitch for mounting screws: 19 mm.
Fig.9 SOT439A.
1997 Feb 19
9
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1997 Feb 19
10
Philips Semiconductors
Product specification
NPN microwave power transistor
MX0912B251Y
NOTES
1997 Feb 19
11
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© Philips Electronics N.V. 1997
SCA53
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Printed in The Netherlands
127147/00/02/pp12
Date of release: 1997 Feb 19
Document order number: 9397 750 01803
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