NE527 [NXP]
Voltage comparator; 电压比较器型号: | NE527 |
厂家: | NXP |
描述: | Voltage comparator |
文件: | 总5页 (文件大小:135K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE527
DESCRIPTION
PIN CONFIGURATIONS
The NE527 is a high-speed analog voltage comparator which, for
the first time, mates state-of-the-art Schottky diode technology with
the conventional linear process. This allows simultaneous
fabrication of high speed TTL gates with a precision linear amplifier
on a single monolithic chip. The NE527 is similar in design to the
Philips Semiconductors NE529 voltage comparator except that it
incorporates an “Emitter-Follower” input stage for extremely low
input currents. This opens the door to a whole new range of
applications for analog voltage comparators.
D, N Packages
+
+
2
1
2
3
4
5
6
7
14
13
12
11
10
9
V
V
1
NC
STROBE A
NC
INPUT A
INPUT B
NC
OUTPUT A
GND
–
V
OUTPUT B
STROBE B
1
FEATURES
• 15ns propagation delay
8
NC
TOP VIEW
• Complementary output gates
• TTL or ECL compatible outputs
• Wide common-mode and differential voltage range
• Typical gain of 5000
APPLICATIONS
• A/D conversion
• ECL-to-TTL interface
• TTL-to-ECL interface
• Memory sensing
• Optical data coupling
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE527N
DWG #
0405B
0175D
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Small Outline (SO) Package
0 to +70°C
NE527D
EQUIVALENT SCHEMATIC
+
STROBE A
4K
V2
+
V
1
1K
1K
1.5K
55
20K
OUTPUT A
4K
1.5K 1.5K
20K
750
750
4K
1.5K
55
500
250
INPUT
B
6.13K
INPUT A
GND
OUTPUT B
7.5K
7.5K
4K
200
300 300
100
200
250
500
–
V
1
STROBE B
315
August 31, 1994
853-0906 13721
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE527
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
RATING
+15
-15
UNIT
V
V +
Positive supply voltage
Negative supply voltage
Gate supply voltage
1
V -
1
V
V +
+7
V
2
V
V
V
Output voltage
+7
V
OUT
IN
Differential input voltage
Input common mode voltage
±5
V
±6
V
CM
1
Max power dissipation
P
D
25°C ambient (still air)
N package
1420
1040
mW
mW
°C
D package
T
A
Operating temperature range
Storage temperature range
0 to +70
-65 to +150
+300
T
STG
°C
T
SOLD
Lead soldering temperature (10sec max)
°C
NOTES:
1. Derate above 25°C, at the following rates:
N package 11.4mW/°C
D package 8.3mW/°C
BLOCK DIAGRAM
STROBE A
+
+
V
V
2
1
OUTPUT A
OUTPUT B
INPUT A
INPUT B
–
STROBE B
V
1
316
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE527
DC ELECTRICAL CHARACTERISTICS
V1+=10V, V1-=-10V, V2+=+5.0V, unless otherwise specified.
NE527
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Typ
Max
Input characteristics
Input offset voltage @ 25°C
over temperature range
Input bias current @ 25°C
over temperature range
Input offset current @ 25°C
over temperature range
Common-mode voltage range
6
10
2
V
mV
OS
BIAS
OS
I
I
µA
4
0.75
1
µA
µA
V
V
IN
=0V
V
CM
-5
+5
Gate characteristics
Output Voltage
V
OUT
“1” State
“0” State
V +=4.75V, I
=-1mA
=10mA
2.7
3.3
V
V
2
SOURCE
V +=4.75V, I
2
0.5
SINK
Strobe inputs
1
“0” Input current
V +=5.25V, V
=0.5V
=2.7V
=2.7V
-2
mA
µA
µA
V
2
STROBE
STROBE
STROBE
1
“1” Input current @ 25°C
Over temperature range
“0” Input voltage
V +=5.25V, V
2
100
200
0.8
V +=5.25V, V
2
V +=4.75V
2
“1” Input voltage
V +=4.75V
2.0
-18
V
2
I
Short-circuit output current
V +=5.25V, V =0V
OUT
-70
mA
SC
2
Power supply requirements
Supply voltage
V +
5
-6
10
-10
V
V
V
1
V -
1
V +
2
4.75
5
5.25
Supply current
V +=10V, V -=-10V
1 1
V +=5.25V
2
I +
Over temp.
Over temp.
Over temp.
5
mA
mA
mA
1
I -
1
10
20
I +
2
NOTES:
1. See Logic Function Table.
AC ELECTRICAL CHARACTERISTICS
T =25°C, unless otherwise specified. (See AC test circuit)
A
LIMITS
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Max
Transient response propagation delay time
Low-to-High
t
V
IN
=±100mV step
16
14
2
26
24
5
ns
ns
ns
PLH
t
High-to-Low
PHL
Delay between output A and B
Strobe delay time
t
t
Turn-on time
6
6
ns
ns
ON
Turn-off time
OFF
317
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE527
TYPICAL PERFORMANCE CHARACTERISTICS
Power Dissipation
vs Supply Voltage
Input Currents vs Temperature
Supply Currents vs Temperature
3.0
2.5
160
15
14
+
I
2
+
V
=
2
150
140
2.0
5.0V
TA = 25 C
+
V
= 5.0V
o
2
13
BIAS CURRENT
1.5
1.0
7
6
5
4
–
I
1
130
0
–
V
= 10V
1
120
110
100
0.3
0.2
0.1
0
+
I
1
3
2
OFFSET CURRENT
+
V
= 10V
1
–50 –25
0
25 50 75 100
o
TEMPERATURE — C
5
6
7
8
9
10
–
) — VOLTS
–50 –25
0
25
50 75 100 125
o
+
SUPPLY VOLTAGE (V
, V
TEMPERATURE —
C
1
1
Supply Current
vs Supply Voltage
Response Time for
Various Input Overdrives
Output Propagation Delays
8
7
6
+
+
–
+
+
–
= — 10V
V
V
= 10V, V
= 5.0V
= — 10V
V
V
= 10V, V
= 5.0V
1
2
1
1
2
1
o
TA = 25 C
+
5
5
4
3
V
= 5.0V
2
OUTPUT A
OUTPUT B
OUTPUT A
4
3
–
+
T
1
OVERDRIVE
5mV
+
50mV
+
5
+
2
2
25mV
+
10mV
T
4
3
2
T
1
0
1
0
+
15mV
+
+100
+100
OVERDRIVE
INPUT B
1
INPUT A
2
1
0
0
0
–100
OVERDRIVE
–100
5
6
7
8
+
9
10
0
5
10 15 20
TIME — ns
25 30
0
5
10 15 20
TIME — ns
25 30
–
, V
1
SUPPLY VOLTAGE (V
) — VOLTS
1
RESPONSE TIME TEST CIRCUIT
(V1 +)
+10
10µF
(V2 +)
+5
10µF
+
+
.1
.1
INPUT PROBE
1K
13
OUTPUT
PROBE
+5
500Ω
1
14
5K
R
L
11
R1
3
4
CR1
INPUT
R2
+ 5
9
51Ω
51Ω
C
L
CR2
CR3
R3
6
8
10
1K
CR4
(V1 –)
–10
+5
.1
NOTES:
CR1 — CR4 = IN914
R1 selected for 15.1 divider
R2, 3 selected for 100mV at Pin 4
Input
PRR = 1MHz
Output
R
= 390Ω
L
L
P
= 50ns
w
C
= 25pF (including
T
= T = 2ns
stray capacitance
r
f
Amplitude = 3.00V
318
August 31, 1994
Philips Semiconductors Linear Products
Product specification
Voltage comparator
NE527
range should be limited to values of 2V less than the supply voltages
APPLICATIONS
(V + and V -) up to a maximum of ±5V as supply voltages are
1
1
One of the main features of the device is that supply voltages (V +,
1
increased. It is also important to note that Output A is in phase with
Input A and Output B is in phase with Input B.
V -) need not be balanced, as in the following diagrams. For proper
1
operation, however, negative supply (V -) should always be at least
1
6V more than the ground terminal (Pin 6). Input common-mode
LOGIC FUNCTION
V
ID
STROBE A
STROBE B
OUTPUT A
OUTPUT B
COMMENT
Read I , I
+
–
(A , B )
V
≤-V
H
H
X
L
X
H
H
L
L
H
ID
OS
IHA ILB
-V <V <V
OS
Undefined
Undefined
OS
ID
V
≥V
ID OS
H
H
L
Read I , I
ILA IHB
X
H
TYPICAL APPLICATIONS
+ 5V
+ 5V
λ
R2
R2
1
6
14
10
Q
1
3
14
10
Q
3
4
11
9
11
9
TTL OUTPUTS
5279N
527N
R2
ECL
Q
4
6
Q
INPUT
R1
R1
R1
R1
– 6V
– 10V
Photodiode Detector
ECL–to–TTL Interface
+ 5V
V
REF
+ 5V
3R
2K
2K
1
TTL INPUT
1
6
14
10
1
6
14
Q
Q
1103
MOS RAM
3
11
3
11
9
5279N
5297N
9
4
4
10
R
1
R
1
100Ω
100Ω
– 10V
– 5.2V
– 6V
MOS Memory Sense AMP
TTL–to–ECL Interface
319
August 31, 1994
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