NE566D [NXP]
Function generator; 函数信号发生器
| 型号： | NE566D |
| 厂家： | 
NXP |
| 描述： | Function generator |
| 文件： | 总5页 (文件大小：52K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
DESCRIPTION
PIN CONFIGURATIONS
The NE/SE566 Function Generator is a voltage-controlled oscillator
of exceptional linearity with buffered square wave and triangle wave
outputs. The frequency of oscillation is determined by an external
resistor and capacitor and the voltage applied to the control terminal.
The oscillator can be programmed over a ten-to-one frequency
range by proper selection of an external resistance and modulated
over a ten-to-one range by the control voltage, with exceptional
linearity.
D, N Packages
1
2
3
4
8
7
6
5
GROUND
V+
NC
C
R
1
1
SQUARE WAVE OUTPUT
MODULATION INPUT
TRIANGLE WAVE OUTPUT
TOP VIEW
FEATURES
• Wide range of operating voltage (up to 24V; single or dual)
APPLICATIONS
• High linearity of modulation
• Tone generators
• Frequency shift keying
• FM modulators
• Highly stable center frequency (200ppm/°C typical)
• Highly linear triangle wave output
• Frequency programming by means of a resistor or capacitor,
• Clock generators
• Signal generators
• Function generators
voltage or current
• Frequency adjustable over 10-to-1 range with same capacitor
ORDERING INFORMATION
DESCRIPTION
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
NE566D
DWG #
0174C
0581B
0404B
0404B
8-Pin Plastic Small Outline (SO) Package
14-Pin Ceramic Dual In-Line Package (CERDIP)
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Plastic Dual In-Line Package (DIP)
0 to +70°C
NE566F
0 to +70°C
NE566N
-55°C to +125°C
SE566N
BLOCK DIAGRAM
V+
R
1
6
8
V
C
SCHMITT
TRIGGER
BUFFER
AMPLIFIER
CURRENT
SOURCES
3
4
5
MODULATION
INPUT
BUFFER
AMPLIFIER
7
C
1
398
April 15, 1992
853-0910 06454
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
EQUIVALENT SCHEMATIC
R
1
(EXTERNAL)
8
6
V+
5
V
C
7
3
4
C
1
(EXTER–
NAL)
5kΩ
1
GROUND
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum operating voltage
RATING
UNIT
V+
26
3
V
V
IN
, V
C
Input voltage
V
P-P
T
Storage temperature range
Operating ambient temperature range
NE566
-65 to +150
°C
STG
T
A
0 to +70
-55 to +125
300
°C
°C
SE566
P
Power dissipation
mW
D
399
April 15, 1992
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
DC ELECTRICAL CHARACTERISTICS
T =25°C, V =±6V, unless otherwise specified.
A
CC
SE566
Typ
NE566
Typ
SYMBOL
General
PARAMETER
UNIT
Max
Min
Max
Min
T
Operating ambient temperature range
Operating supply voltage
-55
125
±12
12.5
0
70
°C
V
A
V
±6
±6
±12
12.5
CC
I
Operating supply current
7
7
mA
CC
1
VCO
f
Maximum operating frequency
Frequency drift with temperature
Frequency drift with supply voltage
1
500
0.1
1
1
600
0.2
1
MHz
ppm/°C
%/V
MAX
1
2
2
Control terminal input impedance
MΩ
FM distortion (±10% deviation)
Maximum sweep rate
Sweep range
0.2
1
0.75
0.4
1
1.5
%
MHz
10:1
10:1
Output
Triangle wave output
impedance
voltage
50
2.4
0.2
50
2.4
0.5
Ω
1.9
1.9
V
P-P
linearity
%
Square wave input
impedance
voltage
50
5.4
50
20
50
50
5.4
50
20
50
Ω
5
5
V
P-P
duty Cycle
Rise time
45
55
40
60
%
t
t
ns
ns
R
Fall Time
F
NOTES:
1. The external resistance for frequency adjustment (R ) must have a value between 2kΩ and 20kΩ.
1
2. The bias voltage (V ) applied to the control terminal (Pin 5) should be in the range V+≤V ≤V+.
C
C
400
April 15, 1992
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
TYPICAL PERFORMANCE CHARACTERISTICS
Normalized Frequency as a
Function of Control Voltage
Normalized Frequency as a
Function of Resistance (R1)
Change in Frequency as a
Function of Temperature
2.5
2.0
100
50
+2.5
+2.0
+1.5
V+ = 12 VOLTS
V+ = 12 VOLTS
V+ = 12 VOLTS
V
= 10 VOLTS
C
V
= 10 VOLTS
C
+1.0
20
10
5
1.5
1.0
+0.5
0
TYPICAL
–0.5
–1.0
–1.5
–2.0
–2.5
0.5
2
1
0
0.5
1.0
1.5
2.0
2.5 3.0
0.1 0.2
0.5
1
2
5
10
–75 –50 –25
0
+25 +50 +75 +100 +125
o
CONTROL VOLTAGE
(BETWEEN PIN 8 AND PIN 5) — VOLTS
TEMPERATURE — ( C)
NORMALIZED FREQUENCY
Power Supply Current as a
Function of Supply Voltage
Frequency as a Function
of Capacitance (C1)
VCO Output Waveforms
20.0
10
V+ = 12 VOLTS
6
5
4
V+ = 12 VOLTS
R
= 4kΩ
t
MAXIMUM
17.5
15.0
V
= 10 VOLTS
= 4k
C
1.0
0.1
R
1
TYPICAL
12
10
12.5
0.01
10.0
7.5
5
8
6
0.001
4
0.0001
10
13
16
19
22
25
2
3
4
5
6
10
10
10
10
10
1
10
FREQUENCY — Hz
SUPPLY VOLTAGE — V
2 [(V )) * (VC)]
R1 C1 V )
OPERATING INSTRUCTIONS
The NE/SE566 Function Generator is a general purpose
fO
+
voltage-controlled oscillator designed for highly linear frequency
modulation. The circuit provides simultaneous square wave and
triangle wave outputs at frequencies up to 1MHz. A typical
and R should be in the range 2kΩ< R <20kΩ.
1
1
A small capacitor (typically 0.001µF) should be connected between
Pins 5 and 6 to eliminate possible oscillation in the control current
source.
connection diagram is shown in Figure 1. The control terminal (Pin
5) must be biased externally with a voltage (V ) in the range
C
V+≤V ≤V+
C
If the VCO is to be used to drive standard logic circuitry, it may be
desirable to use a dual supply as shown in Figure 2. In this case the
square wave output has the proper DC levels for logic circuitry. RTL
can be driven directly from Pin 3. For DTL or TTL gates, which
require a current sink of more than 1mA, it is usually necessary to
connect a 5kΩ resistor between Pin 3 and negative supply. This
increases the current sinking capability to 2mA. The third type of
where V is the total supply voltage. In Figure 1, the control
CC
voltage is set by the voltage divider formed with R and R . The
modulating signal is then AC coupled with the capacitor C . The
modulating signal can be direct coupled as well, if the appropriate
DC bias voltage is applied to the control terminal. The frequency is
given approximately by
2
3
2
401
April 15, 1992
Philips Semiconductors Linear Products
Product specification
Function generator
NE/SE566
interface shown uses a saturated transistor between the 566 and
the logic circuitry. This scheme is used primarily for TTL circuitry
which requires a fast fall time (<50ns) and a large current sinking
capability.
5K
R
1.5K
10K
1
.001 F
µ
+
V
RTL
2
DTL OR T
WITH FAST
FALL TIME
L
10K
5K
R
1.5K
2
R
6
8
1
.001 F
3
µ
5
V
C
SE/NE 566
DTL
&
4
7
1
6
8
4
2
5
C
2
T
L
C
V
1
C
SE/NE 566
3
1
7
R
3
–6 VOLTS
10K
C
1
Figure 2.
Figure 1.
402
April 15, 1992
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