NE57607YDH-T [NXP]
IC 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, 4.40 MM, PLASTIC, SOT-530-1, VSOP-8, Power Management Circuit;
| 型号： | NE57607YDH-T |
| 厂家： | 
NXP |
| 描述： | IC 2-CHANNEL POWER SUPPLY SUPPORT CKT, PDSO8, 4.40 MM, PLASTIC, SOT-530-1, VSOP-8, Power Management Circuit 光电二极管 |
| 文件： | 总10页 (文件大小：131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INTEGRATED CIRCUITS
NE57607
Two-cell Lithium-ion battery protection
with overcurrent, over- and under-voltage
protection
Product data
2001 Oct 03
Philips
Semiconductors
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
GENERAL DESCRIPTION
The NE57607 is a family of 2-cell Li-ion protection ICs. Its over- and
under-voltage accuracy is trimmed to within ±25 mV (5%) and is
available to match the requirements of all lithium-ion cells
manufactured in the market today.
The NE57607 comes in the small VSOP-8A package.
FEATURES
• Trimmed overvoltage trip point to within ±25 mV
• Programmable overvoltage trip time delay
• Trimmed undervoltage trip point to within ±25 mV
APPLICATIONS
• Cellular phones
• Very low undervoltage sleep quiescent current 0.05 mA
• Discharge overcurrent cutoff
• Palmtop computers
• Low operating current (10 mA)
• Very small package VSOP-8A
SIMPLIFIED DEVICE DIAGRAM
+
8
7
5
CHARGER
OR
LOAD
Li-ION CELL
Li-ION CELL
NE57607
6
3
4
2
1
–
SL01564
Figure 1. Simplified device diagram.
2
2001 Oct 03
853-2297 27198
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
TEMPERATURE RANGE
NE57607XDH
VSOP-8A 8-pin surface mount small outline package
–20 to +70 °C
NOTE:
The device has six protection parameter options, indicated by the X on the order code, and defined in the following table.
TYPICAL PROTECTION PARAMETERS IN THE NE57600 FAMILY
T
amb
= 0 °C to 50 °C
Overcharge
detection voltage
(V)
Overcharge detection
hysteresis voltage
(mV)
Over-discharge
detection voltage
(V)
Over-discharge
resumption voltage
(V)
Overcurrent
detection voltage
(mV)
Part Number
NE57607Y
NE57607C
NE57607E
NE57607G
NE57607H
NE57607K
4.350
4.295
4.250
4.300
4.225
4.350
220 ± 50
TBD
2.3 ± 0.1
2.3 ± 0.1
2.3 ± 0.1
2.0 ± 0.1
2.3 ± 0.1
2.3 ± 0.1
3.5 ± 0.2
3.5 ± 0.2
3.5 ± 0.2
3.1 ± 0.2
3.5 ± 0.2
3.5 ± 0.2
150 ± 15
150 ± 15
150 ± 15
140 ± 15
150 ± 15
100 ± 15
300 ± 50
220 ± 50
TBD
220 ± 50
Part number marking
PIN DESCRIPTION
Each device is marked with a four letter code. The first three letters
in the top line of markings designate the product. The fourth letter,
represented by “x”, is a date code. The remaining markings are
manufacturing codes.
PIN
SYMBOL DESCRIPTION
1
CF
Charge FET drive pin, must have common
emitter NPN to drive FET gate.
Overcharge detection output pin
PNP open collector output
Part Number
NE57607YDH
NE57607CDH
NE57607EDH
NE57607GDH
NE57607HDH
NE57607KDH
Marking
AGDx
AGFx
AGHx
AGKx
AGLx
2
3
DF
CS
Discharge control FET (N-ch) control output
pin.
Overcurrent detection input pin.
Monitors discharge current equivalently by
the voltage drop between discharge FET
source and drain. Stops discharge when
voltage between CS pin and GND pin goes
above overcurrent detection threshold value,
and holds until load is released.
AGNx
4
5
GND
Ground pin, or lower cell (C1) negative pin.
C
Overcharge detection dead time setting pin.
Dead time can be set by adding a capacitor
between TD and GND pins.
DLY
PIN CONFIGURATION
CF
DF
1
2
3
4
8
7
6
5
V
C2
CC
C1
6
V
C1
Voltage input for positive terminal of bottom
cell (C10).
Connection pin for lower cell (C1) positive
electrode side and upper cell (C2) negative
electrode side.
V
V
CS
GND
C
DLY
7
8
V
V
Power supply input pin.
CC
TOP VIEW
Voltage input for top terminal of upper cell
(C2).
C2
SL01565
Figure 2. Pin configuration.
3
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
MAXIMUM RATINGS
SYMBOL
PARAMETER
Min.
–0.3
–
Max.
UNIT
V
V
V
Input voltage
+18
V
IN(max)
Maximum CF pin voltage
Maximum CS pin voltage
V
–0.6
V
V
CF(max)
CS(max)
IN
IN
–
V
–0.6
T
Operating ambient temperature range
Storage temperature
–20
–40
–
+70
°C
°C
mW
opr
T
stg
+125
300
P
Power dissipation
D
ELECTRICAL CHARACTERISTICS
T
= 25 °C; V
= V4–V3 = V3–V2 = V2–V1 = V1–GND; V = 4V
, except where noted otherwise.
CEL
amb
CEL
CC
SYMBOL
PARAMETER
CONDITIONS
= 0 °C 50 °C
Min.
4.325
170
Typ.
Max.
4.375
270
UNIT
V
OC
OC
Overcharge detection voltage
T
amb
4.350
220
V
V
Overcharge detection hysteresis
voltage
mV
V
Overdischarge detection voltage
Consumption current 1
Consumption current 2
Consumption current 3
Consumption current 4
2.20
–
2.30
–
2.40
0.1
V
µA
µA
µA
µA
µA
V
OD
I
I
I
I
I
V
V
V
V
V
= V = 1.0 V; V = 1.4 V
C1 CS
VC2(1)
VC2(2)
VC23
VC24
VC1
C2
C2
C2
C2
C2
= V = 1.9 V; V = 3.2 V
–
0.5
15.0
–
0.8
C1
CS
= V = 3.5 V
–
20.0
150
0.3
C1
= V = 4.5 V; R = 270 kΩ
–
C1
OC
V
C1
pin input current
= V = 3.5 V
–0.3
3.30
0
C1
V
V
V
Overdischarge release voltage
GD pin HIGH output voltage
GD pin LOW output voltage
CF pin output current
Discharge resume by voltage rise
3.50
3.70
–
DF
V
C2
V
C2
V
C2
= V = 3.5 V; I = –10 µA
V
–0.3
V –0.2
C2
V
GDH
GDL
CFH
C1
L
C2
= V = 3.5 V; I = 10 µA
–
0.2
0.3
V
C1
L
I
= V = 4.5 V
–
30
150
165
0.55
µA
mV
V
C1
V
Overcurrent detection threshold value
Short circuit threshold value
Overcurrent release
135
0.35
150
0.45
CS1
CS2
V
When both battery pack pins are shorted
Load release: Load of 5MEG& or more between both battery pack pins
t
t
t
t
Overcurrent detection delay time 1
Overcurrent detection delay time 2
Overdischarge detection delay time
Overcharge detection dead time
Start-up voltage
7
–
12
30
18
100
20
ms
µs
ms
s
OC1
OC2
OD
Note 1
8
13
C
= 0.18 µF; Note 2
DLY
0.5
–0.24
1.0
1.5
OCH
V
V
C2
= V = 2.5 V
–0.12
–0.04
V
ST
C1
NOTES:
1. The short-circuit delay time is for the IC only. This time will increase with the discharge FET gate capacitance. The short-circuit condition
may cause the cell voltage to collapse and lengthen the delay.
2. Calculate overcharge dead time according to the following formula:
T
– 5.55 × C
alm TD
(time expressed in seconds, capacitance in µF)
4
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
TECHNICAL DISCUSSION
Lithium cell operating characteristics
The internal resistance of lithium cells is in the 100 mΩ range,
Lithium cell safety
compared to the 5–20 mΩ of the nickel-based batteries. This makes
the Lithium-ion and polymer cells better for lower battery current
applications (less than 1 ampere) as found in cellular and wireless
telephones, palmtop and laptop computers, etc.
Lithium-ion and lithium-polymer cells have a higher energy density
than that of nickel-cadmium or nickel metal hydride cells and have a
much lighter weight. This makes the lithium cells attractive for use in
portable products. However, lithium cells require a protection circuit
within the battery pack because certain operating conditions can be
hazardous to the battery or the operator, if allowed to continue.
The average operating voltage of a lithium-ion or polymer cell is
3.6 V as compared to the 1.2 V of NiCd and NiMH cells. The typical
discharge curve for Lithium cell is shown in Figure 3.
Lithium cells have a porous carbon or graphite anode where lithium
ions can lodge themselves in the pores. The lithium ions are
separated, which avoids the hazards of metallic lithium.
V
OV
4.0
3.0
2.0
If the lithium cell is allowed to become overcharged, metallic lithium
plates out onto the surface of the anode and volatile gas is
generated within the cell. This creates a rapid-disassembly hazard
(the battery ruptures). If the cell is allowed to over-discharge (V
less than approximately 2.3 V), then the copper metal from the
cell
cathode goes into the electrolyte solution. This shortens the cycle
life of the cell, but presents no safety hazard. If the cell experiences
excessive charge or discharge currents, as happens if the wrong
charger is used, or if the terminals short circuit, the internal series
resistance of the cell creates heating and generates the volatile gas
which could rupture the battery.
V
UV
50
The protection circuit continuously monitors the cell voltage for an
overcharged condition or an overdischarged condition. It also
continuously monitors the output for an overcurrent condition. If
any of these conditions are encountered, the protection circuit opens
a series MOSFET switch to terminate the abnormal condition. The
lithium cell protection circuit is placed within the battery pack very
close to the cell.
100
NORMALIZED CELL CAPACITY (%)
SL01553
Figure 3. Lithium discharge curve.
Charging control versus battery protection
The battery pack industry does not recommend using the pack’s
internal protection circuit to end the charging process. The external
battery charger should have a charge termination circuit in it, such
as that provided by the SA57611. This provides two levels of
overcharge protection, with the primary protection of the external
charge control circuit and the backup protection from the battery
pack’s protection circuit. The charge termination circuit will be set to
stop charging at a level around 50 mV less than the overvoltage
threshold voltage of the battery pack’s own protection circuit.
5
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
Charging Lithium cells
The lithium cells must be charged with a dedicated charging IC such
1.0
as the NE57600. These dedicated charging ICs perform a
current-limited, constant-voltage charge, as shown in Figure 4.
The charger IC begins charging with a current that is typically the
rating of the cell (1C) or the milliampere rating of the cell. As the cell
0.5
CONSTANT
CURRENT
CONSTANT
VOLTAGE
approaches its full-charge voltage rating (V ), the current entering
OV
the cell decreases, and the charger IC provides a constant voltage.
When the charge current falls below a preset amount, 50 mA for
example, the charge is discontinued.
If charging is begun below the overdischarged voltage rating of the
cell, it is important to slowly raise the cell voltage up to this
overdischarged voltage level. This is done by a reconditioning
charge. A small amount of current is provided to the cell (50 mA for
example), and the cell voltage is allowed a period of time to rise to
the overdischarged voltage. If the cell voltage recovers, then a
1.0
2.0
TIME (HOURS)
Vov
4.0
normal charging sequence can begin. If the cell does not reach the
overdischarged voltage level, then the cell is too damaged to charge
and the charge is discontinued.
Point B
To take advantage of the larger energy density of lithium cells it is
important to allow enough time to completely charge the cell. When
3.0
the charger switches from constant current to constant voltage
charge (Point B, Figure 4) the cell only contains about 80 percent of
its full capacity. When the cell is 100 mV less than its full rated
charge voltage the capacity contained within the cell is 95 percent.
Hence, allowing the cell to slowly complete its charge takes
advantage of the larger capacity of the lithium cells.
1.0
2.0
TIME (HOURS)
SL01554
Figure 4. Lithium cell charging curves.
FUNCTIONAL DIAGRAM
7
V
CC
V
C2
8
OV Ref
UV Ref
OV DEADTIME
CONTROL
1
5
CF
V
C1
6
OV Ref
UV Ref
C
DLY
NE57607
4
3
GND
CHARGER
DETECTOR
V
CC
UV DEADTIME
CONTROL
2
DF
CS
OC Ref
SL01566
Figure 5. Functional diagram.
6
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
APPLICATION INFORMATION
+
330 Ω
330 Ω
1 MΩ
8
7
5
CHARGER
OR
LOAD
Li-ION CELL
Li-ION CELL
1 kΩ
NE57607
6
3
4
2
1
10 kΩ
47 kΩ
0.1 µF
0.1 µF
0.1 µF
10 kΩ
–
SL01567
Figure 6. Typical application circuit
The NE57607 drives the series N-Channel MOSFETs to states
determined by each of the cell’s voltage and the battery pack load
current. During normal periods of operation, both the discharge and
charge MOSFETs are in the ON state, thus allowing bidirectional
current flow.
FET STATUS FOR NORMAL AND ABNORMAL
CONDITIONS
Operating Mode and Charging
Condition
Charge Discharge
FET (CF) FET (DF)
If the battery pack is being charged, and either of the cell’s voltage
exceeds the overvoltage threshold, then the charge MOSFET is
turned OFF (FET towards the pack’s external terminal). The cell’s
voltage must fall lower than the overvoltage hysteresis voltage
Normal (charging or discharging)
Overcharge (charging)
ON
OFF
ON
ON
ON
Overcharge (discharging)
ON
(V ) before the charge MOSFET is again turned ON.
OV(Hyst)
Overdischarge (discharging)
Overdischarge (charging)
OFF
ON
OFF
ON
If the battery pack is being discharged and the undervoltage
threshold (V ) is exceeded, then the discharge MOSFET is
UV(Th)
turned OFF. It will not run back ON until a charger is applied to the
pack’s external terminals AND the cell’s voltage rises above the
Overcurrent (charging or discharging)
OFF
OFF
undervoltage hysteresis voltage (V
).
UV(Hyst)
Normal mode:
When the battery pack is being discharged, the load current causes
the voltage across the discharge MOSFET to increase past the
Overdischarge detection voltage < battery voltage <overcharge
detection voltage
overcurrent threshold voltage (V ), then the discharge MOSFET
OC(Th)
Discharge current < overcurrent detection level
is turned OFF after a fixed 7–18 ms delay. If short-circuit is placed
across the pack’s terminals, then the discharge MOSFET is turned
OFF after a 100–300 µs time delay to avoid damaging the MOSFETs.
Overcharge mode:
Battery voltage > overcharge detection voltage
Overdischarge mode:
Overdischarge detection voltage > battery voltage
Overcurrent mode:
Discharge current > overcurrent detection level
voltage between VM and GND = discharge current × FET ON
resistance (discharge or charge FET)
7
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
though, is more defined by the total series resistance of the battery
pack. The total resistance of the battery pack is given by Equation 1.
The R-C filters around the NE57607
One needs to place R-C filters on the positive input pins of the
NE57607. These are primarily to shield the IC from electrostatic
occurrences and spikes on the terminals of the battery pack. A
secondary need is during the occurrence of a short-circuit across
the battery pack terminals. Here, the Li-ion cell voltage could
collapse and cause the IC to enter an unpowered state. The R-Cs
then provide power during the first instance of the short circuit and
allow the IC to turn OFF the discharge MOSFET. The IC can then
enter an unpowered state. Lastly, the R-C filter on the node between
the two cells filters any noise voltage caused by noisy load current.
R
= 2(R
) + 2R
DS(ON) cell
(Equation 1)
bat(tot)
The total pack resistance is typically determined by the system
requirements. The total pack resistance directly determines how
much voltage droop will occur during pulses in load current.
Another consideration is the forward-biased safe operating area of
the MOSFET. During a short-circuit, the discharge current can easily
reach 10–15 times the “C-rating” of the cells. The MOSFET must
survive this current prior to the discharge MOSFET can be turned
OFF. So having an FBSOA envelope that exceeds 20 amperes for
5 ms would be safe.
The values shown in Figure 6 are good for these purposes.
Selecting the Optimum MOSFETs:
The Charge MOSFET Circuit.
For a 2-cell battery pack, a logic-level MOSFET should be used.
These MOSFETs have turn-on thresholds of 0.9 V and are
considered full-on at 4.5 V VGS. The total pack voltage will be a
maximum of 8.6 V which is within safe operating range of the gate
voltage which is typically more than two times the full-on voltage.
The NE57607 uses an isolated charge MOSFET drive arrangement.
This is to help keep ESD charges from entering the IC. The charge
MOSFET is normally ON until turned off by the IC. The CF pin uses
a current source to drive an external NPN transistor to turn OFF the
charge FET. If a charge has poor “compliance” or the no load voltage
of the charge can rise significantly above the rating of the battery
pack. This condition causes the source of the charge FET to go very
negative compared to the cell GND voltage after the charge FET
opens. This design allows the charge FET gate drive to “float” down
to this very negative voltage without upsetting the operation of the IC.
The MOSFETs should have a voltage rating greater than 20 V and
should have a high avalanche rating to survive any spikes
generated across the battery pack terminals.
The current rating of the MOSFETs should be greater than four
times the maximum “C-rating” of the cells. The current rating,
PACKING METHOD
GUARD
BAND
TAPE
TAPE DETAIL
REEL
ASSEMBLY
COVER TAPE
CARRIER TAPE
BARCODE
LABEL
BOX
SL01305
Figure 7. Tape and reel packing method.
8
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
VSOP-8A: plastic small outline package; 8 leads; body width 4.4 mm
A
1.35
1.15
0.23 0.16
0.21 0.10
3.4
2.8
4.6
4.2
6.7
6.1
0.7
0.3
0.875
max.
10°
0°
1.15
0.12
VSOP-8A
9
2001 Oct 03
Philips Semiconductors
Product data
Two-cell Lithium-ion battery protection with
overcurrent, over- and under-voltage protection
NE57607
Data sheet status
Product
status
Definitions
[1]
Data sheet status
[2]
Objective data
Development
This data sheet contains data from the objective specification for product development.
Philips Semiconductors reserves the right to change the specification in any manner without notice.
Preliminary data
Product data
Qualification
Production
This data sheet contains data from the preliminary specification. Supplementary data will be
published at a later date. Philips Semiconductors reserves the right to change the specification
without notice, in order to improve the design and supply the best possible product.
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply.
Changes will be communicated according to the Customer Product/Process Change Notification
(CPCN) procedure SNW-SQ-650A.
[1] Please consult the most recently issued data sheet before initiating or completing a design.
[2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL
http://www.semiconductors.philips.com.
Definitions
Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or
at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended
periods may affect device reliability.
Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips
Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or
modification.
Disclaimers
Life support — These products are not designed for use in life support appliances, devices or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications
do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.
Righttomakechanges—PhilipsSemiconductorsreservestherighttomakechanges, withoutnotice, intheproducts, includingcircuits,standard
cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Koninklijke Philips Electronics N.V. 2001
Contact information
All rights reserved. Printed in U.S.A.
For additional information please visit
http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
Date of release: 10-01
9397 750 08993
For sales offices addresses send e-mail to:
sales.addresses@www.semiconductors.philips.com.
Document order number:
Philips
Semiconductors
相关型号：
NE576D-T
IC COMPANDER, PDSO14, 3.90 MM, PLASTIC, MS-012AB, SOT-108-1, SOP-14, Analog Computational Function
NXP
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