NE592D14 [NXP]
Video amplifier; 视频放大器
NXP 
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DESCRIPTION
PIN CONFIGURATIONS
The NE592 is a monolithic, two-stage, differential output, wideband
video amplifier. It offers fixed gains of 100 and 400 without external
components and adjustable gains from 400 to 0 with one external
resistor. The input stage has been designed so that with the addition
of a few external reactive elements between the gain select
terminals, the circuit can function as a high-pass, low-pass, or
band-pass filter. This feature makes the circuit ideal for use as a
video or pulse amplifier in communications, magnetic memories,
display, video recorder systems, and floppy disk head amplifiers.
Now available in an 8-pin version with fixed gain of 400 without
external components and adjustable gain from 400 to 0 with one
external resistor.
D, N Packages
1
2
3
4
5
6
7
14
13
12
11
10
9
INPUT 2
NC
INPUT 1
NC
G
G
GAIN SELECT
G
G
GAIN SELECT
GAIN SELECT
2B
2A
GAIN SELECT
V-
1B
1A
V+
NC
NC
8
OUTPUT 2
OUTPUT 1
TOP VIEW
FEATURES
• 120MHz unity gain bandwidth
D, N Packages
• Adjustable gains from 0 to 400
• Adjustable pass band
1
2
3
4
8
7
6
5
INPUT 2
INPUT 1
G GAIN SELECT
1A
G
GAIN SELECT
V-
1B
• No frequency compensation required
• Wave shaping with minimal external components
• MIL-STD processing available
V+
OUTPUT 2
OUTPUT 1
TOP VIEW
APPLICATIONS
• Floppy disk head amplifier
• Video amplifier
• Pulse amplifier in communications
• Magnetic memory
• Video recorder systems
BLOCK DIAGRAM
+V
R1
R2
R8
R10
R9
Q6
Q5
Q4
Q3
R11
R12
OUTPUT 1
OUTPUT 2
INPUT 2
INPUT 1
G1A
Q1
Q2
G1B
G2B
Q8
R3
R5
G2A
Q7B
Q9
Q10
Q11
Q7A
R7A
R7B
R15
R16
R13
R14
-V
250
April 15, 1992
853-0911 06456
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
ORDERING INFORMATION
DESCRIPTION
14-Pin Plastic Dual In-Line Package (DIP)
14-Pin Small Outline (SO) package
8-Pin Plastic Dual In-Line Package (DIP)
8-Pin Small Outline (SO) package
NOTES:
TEMPERATURE RANGE
0 to +70°C
ORDER CODE
DWG #
0405B
0175D
0404B
0174C
NE592N14
NE592D14
NE592N8
NE592D8
0 to +70°C
0 to +70°C
0 to +70°C
N8, N14, D8 and D14 package parts also available in “High” gain version by adding “H” before
package designation, i.e., NE592HDB
ABSOLUTE MAXIMUM RATINGS
T =+25°C, unless otherwise specified.
A
SYMBOL
PARAMETER
RATING
UNIT
V
V
V
Supply voltage
±8
±5
V
V
CC
IN
Differential input voltage
Common-mode input voltage
Output current
±6
V
CM
OUT
I
10
mA
°C
°C
T
A
Operating ambient temperature range
Storage temperature range
Maximum power dissipation,
0 to +70
-65 to +150
T
STG
P
D MAX
T =25°C (still air)1
A
D-14 package
D-8 package
N-14 package
N-8 package
0.98
0.79
1.44
1.17
W
W
W
W
NOTES:
1. Derate above 25°C at the following rates:
D-14 package at 7.8mW/°C
D-8 package at 6.3mW/°C
N-14 package at 11.5mW/°C
N-8 package at 9.3mW/°C
251
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DC ELECTRICAL CHARACTERISTICS
T =+25°C V =±6V, V =0, unless otherwise specified. Recommended operating supply voltages V =±6.0V. All specifications apply to both
A
SS
CM
S
standard and high gain parts unless noted differently.
NE592
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Max
A
VOL
Differential voltage gain,
standard part
1
Gain 1
R =2kΩ, V
=3V
OUT P-P
250
80
400
100
600
120
V/V
V/V
L
2, 4
Gain 2
R
C
Input resistance
IN
1
Gain 1
4.0
30
kΩ
kΩ
pF
µA
µA
2, 4
Gain 2
10
2
4
Input capacitance
Gain 2
2.0
0.4
9.0
12
IN
I
Input offset current
5.0
30
OS
I
Input bias current
BIAS
V
V
Input noise voltage
Input voltage range
Common-mode rejection ratio
BW 1kHz to 10MHz
µV
RMS
NOISE
±1.0
V
IN
CMRR
4
Gain 2
V
±1V, f<100kHz
60
86
60
dB
dB
CM
4
Gain 2
V
±1V, f=5MHz
CM
PSRR
Supply voltage rejection ratio
4
Gain 2
∆V =±0.5V
50
70
dB
S
V
OS
Output offset voltage
Gain 1
R =∞
1.5
1.5
V
V
V
V
V
L
4
Gain 2
R =∞
L
3
Gain 3
R =∞
L
0.35
2.9
0.75
3.4
V
V
Output common-mode voltage
Output voltage swing
differential
R =∞
L
2.4
3.0
CM
R =2kΩ
L
4.0
OUT
R
Output resistance
20
18
Ω
OUT
I
Power supply current
R =∞
L
24
mA
CC
NOTES:
1. Gain select Pins G and G connected together.
1A
1B
2. Gain select Pins G and G connected together.
2A
2B
3. All gain select pins open.
4. Applies to 14-pin version only.
252
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
DC ELECTRICAL CHARACTERISTICS
DC Electrical CharacteristicsV =±6V, V =0, 0°C ≤T ≤70°C, unless otherwise specified. Recommended operating supply voltages V =±6.0V.
SS
CM
A
S
All specifications apply to both standard and high gain parts unless noted differently.
NE592
Typ
SYMBOL
PARAMETER
TEST CONDITIONS
UNIT
Min
Max
A
VOL
Differential voltage gain,
standard part
1
Gain 1
R =2kΩ, V
=3V
OUT P-P
250
80
600
120
V/V
V/V
L
2, 4
Gain 2
R
Input resistance
IN
2, 4
Gain 2
8.0
kΩ
µA
µA
V
I
I
Input offset current
6.0
40
OS
Input bias current
BIAS
V
IN
Input voltage range
±1.0
50
CMRR
Common-mode rejection ratio
4
Gain 2
V
CM
±1V, f<100kHz
dB
dB
PSRR
Supply voltage rejection ratio
4
Gain 2
∆V =±0.5V
50
S
Output offset voltage
Gain 1
1.5
1.5
1.0
V
V
R =∞
V
OS
L
4
Gain 2
Gain 3
3
Output voltage swing differential
Power supply current
R =2kΩ
L
2.8
V
OUT
I
R =∞
L
27
mA
CC
NOTES:
1. Gain select Pins G and G connected together.
1A
1B
2. Gain select Pins G and G connected together.
2A
2B
3. All gain select pins open.
4. Applies to 14-pin versions only.
AC ELECTRICAL CHARACTERISTICS
T =+25°C V =±6V, V =0, unless otherwise specified. Recommended operating supply voltages V =±6.0V. All specifications apply to both
A
SS
CM
S
standard and high gain parts unless noted differently.
SYMBOL
PARAMETER
TEST CONDITIONS
NE/SA592
Typ
UNIT
Min
Max
Bandwidth
1
BW
Gain 1
40
90
MHz
MHz
2, 4
Gain 2
Rise time
1
t
t
Gain 1
Gain 2
V
V
=1V
=1V
10.5
4.5
12
10
ns
ns
R
OUT
P-P
2, 4
Propagation delay
1
Gain 1
Gain 2
7.5
6.0
ns
ns
PD
OUT
P-P
2, 4
NOTES:
1. Gain select Pins G and G connected together.
1A
1B
2. Gain select Pins G and G connected together.
2A
2B
3. All gain select pins open.
4. Applies to 14-pin versions only.
253
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL PERFORMANCE CHARACTERISTICS
Common-Mode Rejection Ratio
as a Function of Frequency
Output Voltage Swing as
a Function of Frequency
Pulse Response
100
90
7.0
6.0
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
V
= +6V
GAIN 2
S
V
T
= +6V
S
A
L
o
V
T
= +6V
T
= 25 C
o
S
A
= 25 C
o
80
70
60
50
40
30
= 25 C
R
= 1k
A
L
R
= 1kΩ
5.0
4.0
3.0
2.0
1.0
0
GAIN 2
GAIN 1
20
10
0
-0.2
-0.4
10k
100k
1M
10M
100M
1
5
10
50 100
5001000
-15 -10 -5
0
5
10 15 20 25 30 35
FREQUENCY – Hz
FREQUENCY – MHz
TIME – ns
Supply Current as a
Function of Temperature
Pulse Response as a
Function of Supply Voltage
Pulse Response as a
Function of Temperature
1.6
1.4
1.2
1.6
28
24
GAIN 2
o
GAIN 2
o
T
= 25 C
A
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
= 25 C
A
V
= +
S
L
6V
V
= +8V
R
= 1kΩ
S
L
R
= 1kΩ
1.0
0.8
0.6
V
V
= +6V
= +3V
S
S
o
= 0 C
T
amb
20
16
12
8
o
= 25 C
T
A
0.4
0.2
o
= 70 C
T
A
0
-0.2
-0.4
-0.2
-0.4
-15 -10 -5
0
5
10 15 20 25 30 35
-15 -10 -5
0
5
10 15 20 25 30 35
3
4
5
6
7
8
SUPPLY VOLTAGE – +V
TIME – ns
TIME – ns
Voltage Gain as a
Function of Temperature
Gain vs. Frequency as a
Function of Temperature
Voltage Gain as a
Function of Supply Voltage
1.4
1.10
1.08
1.06
1.04
1.02
1.00
0.98
0.96
0.94
60
50
40
GAIN 2
o
T
= 25 C
V
= +
6V
amb
1.3
1.2
1.1
1.0
0.9
0.8
S
V
= +
S
L
6V
R
= 1kΩ
GAIN 2
30
o
T
= –55 C
A
GAIN 2
20
10
0
o
T
= 25 C
GAIN 1
A
0.7
o
T
= 125 C
0.6
0.5
0.4
A
GAIN 1
0.92
0.90
-10
0
10
20 30
40 50
60
70
1
5
10
50 100
500 1000
3
4
5
6
7
8
o
TEMPERATURE –
C
FREQUENCY – MHz
SUPPLY VOLTAGE – +V
254
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL PERFORMANCE CHARACTERISTICS (Continued)
Gain vs. Frequency as a
Function of Supply Voltage
Voltage Gain
Adjust Circuit
Voltage Gain as a
Function of RADJ (Figure 3)
60
50
40
1000
V
T
= +6V
f = 100kHz
GAIN 2
o
0.2µF
S
12
T
= 25 C
A
14
1
11
8
o
= 25 C
100
10
1
R
= 1kΩ
A
L
FIGURE 3
592
0.2µF
7
4
3
30
20
V
S
= +8V
51
51
V
R
1k
1k
ADJ
V
= +6V
S
10
0
.1
V
S
= +3V
o
T = 25 C
A
= +6V
S
.01
-10
1
5
10
50 100
500 1000
1
10
100
1K
10K 100K
– Ω
1M
FREQUENCY – MHz
R
ADJ
Output Voltage and Current
Swing as a Function of
Supply Voltage
Supply Current as a
Function of Temperature
Differential Overdrive
Recovery Time
70
60
50
40
21
20
7.0
o
V
= +6V
T
= 25 C
S
A
V
= +6V
S
6.0
5.0
o
T
= 25 C
A
GAIN 2
19
18
17
VOLTAGE
4.0
3.0
2.0
30
20
10
CURRENT
16
15
14
1.0
0
0
-20
20
60
100
140
-60
0
20 40 60 80 100 120 140 160 180 200
3.0
4.0
5.0
6.0
7.0
8.0
o
TEMPERATURE –
C
SUPPLY VOLTAGE – +V
DIFFERENTIAL INPUT VOLTAGE – mV
Input Noise Voltage
as a Function of
Source Resistance
Output Voltage Swing as a
Function of Load Resistance
Input Resistance as a
Function of Temperature
7.0
6.0
100
90
70
GAIN 2
GAIN 2
V
T
= +6V
S
V
= +6V
V
= +6V
S
60
50
40
S
o
= 25 C
A
o
80
70
60
50
40
30
T
= 25 C
A
BW = 10MHz
5.0
4.0
3.0
2.0
1.0
0
30
20
20
10
0
10
0
1
10
100
1K
10K
-60
-20
0
20
60
100
140
10
50 100
500 1K
5K 10K
o
LOAD RESISTANCE – Ω
TEMPERATURE –
C
SOURCE RESISTANCE – Ω
255
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
Phase Shift as a
Function of Frequency
Phase Shift as a
Function of Frequency
0
0
-50
GAIN 2
V
T
= +6V
S
A
V
T
= +6V
o
S
= 25 C
-5
o
= 25 C
A
-100
-10
-15
-150
-200
-250
GAIN 2
GAIN 1
-20
-25
-300
-350
1
10
100
1000
0
1
2
3
4
5
6
7
8
9
10
FREQUENCY – MHz
FREQUENCY – MHz
Voltage Gain as a
Function of Frequency
Voltage Gain as a
Function of Frequency
60
50
V
T
= +6V
S
V
T
= +6V
S
A
40
30
20
10
GAIN 1
GAIN 2
o
= 25 C
o
amb
= 25 C
R
= 1KΩ
GAIN 3
L
40
30
0
-10
-20
20
10
0
-30
-40
-50
1
10
100
1000
.01
.1
1
10
100
1000
FREQUENCY – MHz
FREQUENCY – MHz
TEST CIRCUITS T = 25°C, unless otherwise specified.
A
V
V
592
IN
R
OUT
L
51Ω
51Ω
0.2µF
0.2µF
e
in
592
e
e
out
out
51Ω
51Ω
1k 1k
256
April 15, 1992
Philips Semiconductors RF Communications Products
Product specification
Video amplifier
NE592
TYPICAL APPLICATIONS
+6
2r
e
11
14
10
5
V
V
0
592
4
1
NOTE:
1
7
V
v
(s)
4
1.4 @ 10
Z(S) ) 2r
0
[
(s)
e
1
Z
4
1.4 @ 10
[
Z(S) ) 32
-6
+6
Basic Configuration
+5
0.2µF
+6
11
14
1
10
2KΩ
10
1
9
4
8
8
7
V
529
592
V
0
1
7
5
Q
Q
11
14
1
0.2µF
10
8
7
5
4
592
C
5
2
3
4
2KΩ
-6
AMPLITUDE: 1-10 mV p-p
FREQUENCY: 1-4 MHz
NOTE:
6
For frequency F << 1/2 π (32) C
1
-6
dVi
4
V
] 1.4 x 10 C
O
dT
READ HEAD
DIFFERENTIATOR/AMPLIFIER
ZERO CROSSING DETECTOR
Differentiation with High
Common-Mode Noise Rejection
Disc/Tape Phase-Modulated Readback Systems
FILTER NETWORKS
V
(s) TRANSFER
(s) FUNCTION
FILTER
TYPE
0
1
Z NETWORK
V
R
L
4
1.4 10
1
ƪ
ƫ
LOW PASS
L
s ) RńL
R
R
C
L
4
1.4 10
s
ƪ
ƫ
R
HIGH PASS
BAND PASS
s ) 1ńRC
C
4
1.4 10
s
ƪ
ƪ
ƫ
ƫ
L
2
s
) RńLs ) 1ńLC
L
2
4
s
) 1ńLC
2
) 1ńLC ) sńRC
R
1.4 10
BAND REJECT
R
s
C
NOTES:
In the networks above, the R value used is assumed to include 2r , or approximately 32Ω.
e
S = jω
ω = 2πf
257
April 15, 1992
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