NX3V1T66GM-G [NXP]
IC,ANALOG SWITCH,SINGLE,SPST,CMOS,LLCC,6PIN,PLASTIC;
| 型号： | NX3V1T66GM-G |
| 厂家： | 
NXP |
| 描述： | IC,ANALOG SWITCH,SINGLE,SPST,CMOS,LLCC,6PIN,PLASTIC 开关 |
| 文件： | 总20页 (文件大小：352K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NX3V1T66
Low-ohmic single-pole single-throw analog switch
Rev. 05 — 24 March 2010
Product data sheet
1. General description
The NX3V1T66 provides one single-pole single-throw analog switch function. It has two
input/output terminals (Y and Z) and an active HIGH enable input pin (E). When pin E is
LOW, the analog switch is turned off.
Schmitt trigger action at the enable input (E) makes the circuit tolerant to slower input rise
and fall times across the entire VCC range from 1.4 V to 4.3 V.
A low input voltage threshold allows pin E to be driven by lower level logic signals without
a significant increase in supply current ICC. This makes it possible for the NX3V1T66 to
switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level
translation.
The NX3V1T66 allows signals with amplitude up to VCC to be transmitted from Y to Z or
from Z to Y. Its ultra-low ON resistance (0.3 Ω) and flatness (0.1 Ω) ensures minimal
attenuation and distortion of transmitted signals.
2. Features
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
0.8 Ω (typical) at VCC = 1.4 V
0.5 Ω (typical) at VCC = 1.65 V
0.3 Ω (typical) at VCC = 2.3 V
0.25 Ω (typical) at VCC = 2.7 V
0.25 Ω (typical) at VCC = 4.3 V
High noise immunity
ESD protection:
HBM JESD22-A114F Class 3A exceeds 7500 V
MM JESD22-A115-A exceeds 200 V
CDM AEC-Q100-011 revision B exceeds 1000 V
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD 78B Class II Level A
Enable input accepts voltages above supply voltage
1.8 V control logic at VCC = 3.6 V
High current handling capability (500 mA continuous current under 3.3 V supply)
Specified from −40 °C to +85 °C and from −40 °C to +125 °C
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
3. Applications
Cell phone
PDA
Portable media player
4. Ordering information
Table 1.
Ordering information
Type number
Package
Temperature range Name
Description
TSSOP5 plastic thin shrink small outline package; 5 leads;
body width 1.25 mm
Version
NX3V1T66GW
NX3V1T66GM
−40 °C to +125 °C
SOT353-1
−40 °C to +125 °C
XSON6 plastic extremely thin small outline package; no leads; SOT886
6 terminals; body 1 × 1.45 × 0.5 mm
5. Marking
Table 2.
Marking codes[1]
Type number
NX3V1T66GW
NX3V1T66GM
Marking code
dO
dO
[1] The pin 1 indicator is located on the lower left corner of the device, below the marking code.
6. Functional diagram
Y
Z
E
Z
Y
E
001aah372
001aag487
Fig 1. Logic symbol
Fig 2. Logic diagram
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
2 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
7. Pinning information
7.1 Pinning
NX3V1T66
NX3V1T66
Y
Z
1
2
3
6
5
4
V
CC
1
2
3
5
4
Y
Z
V
E
CC
n.c.
E
GND
GND
001aah555
Transparent top view
001aai591
Fig 3. Pin configuration SOT353-1 (TSSOP5)
Fig 4. Pin configuration SOT886 (XSON6)
7.2 Pin description
Table 3.
Symbol
Pin description
Pin
Description
SOT353-1
SOT886
Y
1
2
3
4
-
1
2
3
4
5
6
independent input or output
independent output or input
ground (0 V)
Z
GND
E
enable input (active HIGH)
not connected
n.c.
VCC
5
supply voltage
8. Functional description
Table 4.
Function table[1]
Input E
Switch
L
OFF-state
ON-state
H
[1] H = HIGH voltage level; L = LOW voltage level.
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
3 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
9. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol
VCC
VI
Parameter
Conditions
enable input E
VI < −0.5 V
Min
−0.5
−0.5
−0.5
−50
-
Max
+4.6
+4.6
Unit
V
supply voltage
input voltage
[1]
[2]
V
VSW
IIK
switch voltage
input clamping current
VCC + 0.5 V
-
mA
ISK
switch clamping current VI < −0.5 V or VI > VCC + 0.5 V
±50
±500
mA
mA
ISW
switch current
VSW > −0.5 V or VSW < VCC + 0.5 V;
-
source or sink current
VSW > −0.5 V or VSW < VCC + 0.5 V;
pulsed at 1 ms duration, < 10 % duty cycle;
peak current
-
±750
mA
Tstg
Ptot
storage temperature
total power dissipation
−65
+150
°C
[3]
Tamb = −40 °C to +125 °C
-
250
mW
[1] The minimum input voltage rating may be exceeded if the input current rating is observed.
[2] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed but may not
exceed 4.6 V.
[3] For TSSOP5 package: above 87.5 °C the value of Ptot derates linearly with 4.0 mW/K.
For XSON6 package: above 118 °C the value of Ptot derates linearly with 7.8 mW/K.
10. Recommended operating conditions
Table 6.
Recommended operating conditions
Symbol Parameter
Conditions
Min
1.4
0
Max
4.3
Unit
V
VCC
VI
supply voltage
input voltage
enable input E
4.3
V
[1]
[2]
VSW
Tamb
Δt/ΔV
switch voltage
0
VCC
+125
200
V
ambient temperature
input transition rise and fall rate
−40
-
°C
ns/V
VCC = 1.4 V to 4.3 V
[1] To avoid sinking GND current from of terminal Z when switch current flows in terminal Y, the voltage drop across the bidirectional switch
must not exceed 0.4 V. If the switch current flows into terminal Z, no GND current will flow from terminal Y. In this case, there is no limit
for the voltage drop across the switch.
[2] Applies to control signal levels.
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
4 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11. Static characteristics
Table 7.
Static characteristics
At recommended operating conditions; voltages are referenced to GND (ground 0 V).
Symbol Parameter
Conditions
Tamb = 25 °C
Min Typ Max
Tamb = −40 °C to +125 °C Unit
Min
Max
Max
(85 °C) (125 °C)
VIH
HIGH-level
input voltage
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
0.9
0.9
1.1
1.3
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
0.9
0.9
1.1
1.3
1.4
-
-
-
-
-
V
V
V
V
V
V
V
V
V
V
-
-
-
-
-
-
-
-
-
VIL
LOW-level
input voltage
0.3
0.4
0.4
0.5
0.6
0.3
0.4
0.4
0.5
0.6
0.3
0.3
0.4
0.5
0.6
-
-
-
-
-
-
-
-
II
input leakage enable input E; VI = GND to 4.3 V;
current
VCC = 1.4 V to 4.3 V
Y port; see Figure 5
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
Z port; see Figure 6
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
IS(OFF)
OFF-state
leakage
current
-
-
-
-
±5
-
-
±50
±50
±500 nA
±500 nA
±10
IS(ON)
ON-state
leakage
current
-
-
-
-
±5
-
-
±50
±50
±500 nA
±500 nA
±10
ICC
supply current VI = VCC or GND; VCC = 3.6 V;
VSW = GND or VCC; IO = 0 A
VCC = 3.6 V
VCC = 4.3 V
-
-
-
-
100
150
-
-
690
800
6000 nA
7000 nA
ΔICC
additional
supply current
VSW = GND or VCC
VI = 2.6 V; VCC = 4.3 V
VI = 2.6 V; VCC = 3.6 V
VI = 1.8 V; VCC = 4.3 V
VI = 1.8 V; VCC = 3.6 V
VI = 1.8 V; VCC = 2.5 V
-
-
-
-
-
-
2.0
0.35
7.0
2.5
50
4.0
0.7
10.0
4.0
200
-
-
-
-
-
-
-
7
1
7
1
μA
μA
μA
μA
nA
pF
15
5
15
5
300
-
500
-
CI
input
1.0
capacitance
CS(OFF) OFF-state
capacitance
-
-
70
-
-
-
-
-
-
-
-
pF
pF
CS(ON)
ON-state
205
capacitance
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
5 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11.1 Test circuits
V
CC
V
CC
E
Z
E
Z
V
IL
V
IH
Y
Y
I
S
I
S
GND
GND
V
V
V
V
O
I
O
I
001aag488
001aag489
VI = 0.3 V or VCC − 0.3 V; VO = VCC − 0.3 V or 0.3 V.
VI = 0.3 V or VCC − 0.3 V; VO = open circuit.
Fig 5. Test circuit for measuring OFF-state leakage
current
Fig 6. Test circuit for measuring ON-state leakage
current
11.2 ON resistance
Table 8.
Resistance RON
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 8 to Figure 14.
Symbol Parameter
Conditions
Tamb = −40 °C to +85 °C Tamb = −40 °C to +125 °C Unit
Min
Typ[1]
Max
Min
Max
RON(peak) ON resistance
(peak)
VI = GND to VCC;
ISW = 100 mA; see Figure 7
VCC = 1.4 V
-
-
-
-
-
0.8
0.5
1.9
0.8
-
-
-
-
-
2.1
0.9
0.6
0.5
0.5
Ω
Ω
Ω
Ω
Ω
VCC = 1.65 V
VCC = 2.3 V
0.3
0.5
VCC = 2.7 V
0.25
0.25
0.45
0.45
VCC = 4.3 V
[2]
RON(flat)
ON resistance
(flatness)
VI = GND to VCC
ISW = 100 mA
;
VCC = 1.4 V
VCC = 1.65 V
VCC = 2.3 V
VCC = 2.7 V
VCC = 4.3 V
-
-
-
-
-
0.5
0.25
0.1
1.7
0.6
-
-
-
-
-
1.8
0.7
Ω
Ω
Ω
Ω
Ω
0.2
0.2
0.1
0.2
0.2
0.1
0.25
0.25
[1] Typical values are measured at Tamb = 25 °C.
[2] Flatness is defined as the difference between the maximum and minimum value of ON resistance measured at identical VCC and
temperature.
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
6 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
11.3 ON resistance test circuit and graphs
001aah800
0.8
R
ON
(Ω)
0.6
V
SW
(1)
0.4
0.2
0
V
CC
(2)
E
Z
(3)
V
IH
(4)
(5)
Y
(6)
GND
V
I
I
SW
0
1
2
3
4
5
V (V)
I
001aah375
RON = VSW / ISW
.
(1) VCC = 1.5 V.
(2) VCC = 1.8 V.
(3) VCC = 2.5 V.
(4) VCC = 2.7 V.
(5) VCC = 3.3 V.
(6) VCC = 4.3 V.
Measured at Tamb = 25 °C.
Fig 7. Test circuit for measuring ON resistance
Fig 8. Typical ON resistance as a function of input
voltage
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
7 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
001aah805
001aah801
0.8
0.6
R
(Ω)
ON
R
(Ω)
ON
0.6
0.4
(1)
0.4
(2)
(3)
(1)
(2)
(3)
0.2
(4)
0.2 (4)
0
0
0
1
2
3
0
1
2
3
V (V)
I
V (V)
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 9. ON resistance as a function of input voltage;
VCC = 1.5 V
Fig 10. ON resistance as a function of input voltage;
VCC = 1.8 V
001aah802
001aah803
0.6
0.6
R
ON
R
ON
(Ω)
(Ω)
0.4
0.4
(1)
(1)
(2)
(3)
(2)
(3)
0.2
0.2
(4)
(4)
0
0
0
1
2
3
0
1
2
3
V (V)
I
V (V)
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 11. ON resistance as a function of input voltage;
VCC = 2.5 V
Fig 12. ON resistance as a function of input voltage;
VCC = 2.7 V
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
8 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
001aah804
001aaj895
0.6
0.6
R
ON
R
ON
(Ω)
(Ω)
0.4
0.4
(1)
(2)
(3)
(4)
(1)
(2)
(3)
(4)
0.2
0.2
0
0
0
1
2
3
4
0
1
2
3
4
5
V (V)
I
V (V)
I
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
Fig 13. ON resistance as a function of input voltage;
VCC = 3.3 V
Fig 14. ON resistance as a function of input voltage;
VCC = 4.3 V
12. Dynamic characteristics
Table 9.
Dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit Figure 16.
Symbol Parameter
Conditions
25 °C
−40 °C to +125 °C
Max Max
(85 °C) (125 °C)
Unit
Min Typ[1] Max Min
ten
enable time
E to Y; see Figure 15
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
E to Y; see Figure 15
VCC = 1.4 V to 1.6 V
VCC = 1.65 V to 1.95 V
VCC = 2.3 V to 2.7 V
VCC = 2.7 V to 3.6 V
VCC = 3.6 V to 4.3 V
-
-
-
-
-
35
28
20
18
18
49
40
30
28
28
-
-
-
-
-
53
43
32
30
30
57
48
35
32
32
ns
ns
ns
ns
ns
tdis
disable time
-
-
-
-
-
32
23
14
11
11
70
55
25
20
20
-
-
-
-
-
80
60
30
25
25
90
65
35
30
30
ns
ns
ns
ns
ns
[1] Typical values are measured at Tamb = 25 °C and VCC = 1.5 V, 1.8 V, 2.5 V, 3.3 V and 4.3 V respectively.
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
9 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
12.1 Waveform and test circuits
V
I
E input
V
M
GND
t
t
en
dis
V
OH
V
X
V
X
Y output
OFF to HIGH
HIGH to OFF
GND
switch
switch
switch
disabled
enabled
disabled
001aah875
Measurement points are given in Table 10.
Logic level: VOH is the typical output voltage that occurs with the output load.
Fig 15. Enable and disable times
Table 10. Measurement points
Supply voltage
VCC
Input
VM
Output
VX
1.4 V to 4.3 V
0.5VCC
0.9VOH
V
CC
E
Y/Z
Z/Y
G
C
L
V
V
V
R
L
V
EXT
= 1.5 V
I
O
001aah377
Test data is given in Table 11.
Definitions test circuit:
RL = Load resistance.
CL = Load capacitance including jig and probe capacitance.
VEXT = External voltage for measuring switching times.
Fig 16. Load circuit for switching times
Table 11. Test data
Supply voltage
VCC
Input
VI
Load
CL
tr, tf
RL
1.4 V to 4.3 V
VCC
≤ 2.5 ns
35 pF
50 Ω
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
10 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
12.2 Additional dynamic characteristics
Table 12. Additional dynamic characteristics
At recommended operating conditions; voltages are referenced to GND (ground = 0 V); VI = GND or VCC (unless otherwise
specified); tr = tf ≤ 2.5 ns; Tamb = 25 °C.
Symbol Parameter
Conditions
Min
Typ
Max
Unit
[1]
THD
total harmonic
distortion
fi = 20 Hz to 20 kHz; RL = 32 Ω; see Figure 17
VCC = 1.4 V; VI = 1 V (p-p)
VCC = 1.65 V; VI = 1.2 V (p-p)
VCC = 2.3 V; VI = 1.5 V (p-p)
VCC = 2.7 V; VI = 2 V (p-p)
VCC = 4.3 V; VI = 2 V (p-p)
RL = 50 Ω; see Figure 18
VCC = 1.4 V to 4.3 V
-
-
-
-
-
0.05
-
-
-
-
-
%
%
%
%
%
0.03
0.01
0.01
0.01
[1]
[1]
f(−3dB)
−3 dB frequency
response
-
-
25
-
-
MHz
dB
αiso
isolation (OFF-state)
crosstalk voltage
fi = 100 kHz; RL = 50 Ω; see Figure 19
VCC = 1.4 V to 4.3 V
−90
Vct
between digital inputs and switch;
fi = 1 MHz; CL = 50 pF; RL = 50 Ω; see Figure 20
VCC = 1.4 V to 3.6 V
VCC = 3.6 V to 4.3 V
-
-
0.3
0.5
-
-
V
V
Qinj
charge injection
fi = 1 MHz; CL = 0.1 nF; RL = 1 MΩ; Vgen = 0 V;
Rgen = 0 Ω; see Figure 21
VCC = 1.5 V
VCC = 1.8 V
VCC = 2.5 V
VCC = 3.3 V
VCC = 4.3 V
-
-
-
-
-
6.5
6.5
6.5
6.5
12
-
-
-
-
-
pC
pC
pC
pC
pC
[1] fi is biased at 0.5VCC
.
12.3 Test circuits
V
CC
0.5V
CC
E
V
IH
R
L
Y/Z
Z/Y
f
D
i
001aah378
Fig 17. Test circuit for measuring total harmonic distortion
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
11 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
V
CC
0.5V
CC
E
V
IH
R
L
Y/Z
Z/Y
f
dB
i
001aah379
Adjust fi voltage to obtain 0 dBm level at output. Increase fi frequency until dB meter reads −3 dB.
Fig 18. Test circuit for measuring the frequency response when channel is in ON-state
0.5V
V
CC
0.5V
CC
CC
E
V
IL
R
R
L
L
Y/Z
Z/Y
f
dB
i
001aah380
Adjust fi voltage to obtain 0 dBm level at input.
Fig 19. Test circuit for measuring isolation (OFF-state)
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
12 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
V
CC
E
Y/Z
Z/Y
G
V
R
R
C
V
V
O
I
L
L
L
0.5V
0.5V
CC
CC
001aah383
a. Test circuit
logic
input (E)
off
on
off
V
O
V
ct
001aah381
b. Input and output pulse definitions
Fig 20. Test circuit for measuring crosstalk voltage between digital inputs and switch
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
13 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
V
CC
E
R
gen
Y/Z
Z/Y
G
C
L
V
V
V
R
V
gen
I
O
L
GND
001aah385
a. Test circuit
logic
input (E)
off
on
off
V
O
V
O
001aah384
b. Input and output pulse definitions
Definition: Qinj = ΔVO × CL.
ΔVO = output voltage variation.
Rgen = generator resistance.
Vgen = generator voltage.
Fig 21. Test circuit for measuring charge injection
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
14 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
13. Package outline
TSSOP5: plastic thin shrink small outline package; 5 leads; body width 1.25 mm
SOT353-1
D
E
A
X
c
y
H
v
M
A
E
Z
5
4
A
2
A
(A )
3
A
1
θ
L
L
p
1
3
e
w M
b
p
detail X
e
1
0
1.5
3 mm
scale
DIMENSIONS (mm are the original dimensions)
A
(1)
(1)
(1)
A
A
A
b
c
D
E
e
e
1
H
L
L
p
UNIT
v
w
y
Z
θ
1
2
3
p
E
max.
0.1
0
1.0
0.8
0.30
0.15
0.25
0.08
2.25
1.85
1.35
1.15
2.25
2.0
0.46
0.21
0.60
0.15
7°
0°
mm
1.1
0.65
1.3
0.15
0.425
0.3
0.1
0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
00-09-01
03-02-19
SOT353-1
MO-203
SC-88A
Fig 22. Package outline SOT353-1 (TSSOP5)
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
15 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
XSON6: plastic extremely thin small outline package; no leads; 6 terminals; body 1 x 1.45 x 0.5 mm
SOT886
b
1
2
3
4×
(2)
L
L
1
e
6
5
4
e
1
e
1
6×
A
(2)
A
1
D
E
terminal 1
index area
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
A
A
1
UNIT
b
D
E
e
e
L
L
1
1
max max
0.25
0.17
1.5
1.4
1.05
0.95
0.35 0.40
0.27 0.32
mm
0.5 0.04
0.6
0.5
Notes
1. Including plating thickness.
2. Can be visible in some manufacturing processes.
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
04-07-15
04-07-22
SOT886
MO-252
Fig 23. Package outline SOT886 (XSON6)
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
16 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
14. Abbreviations
Table 13. Abbreviations
Acronym
CDM
Description
Charged Device Model
CMOS
ESD
Complementary Metal Oxide Semiconductor
ElectroStatic Discharge
Human Body Model
HBM
MM
Machine Model
PDA
Personal Digital Assistant
15. Revision history
Table 14. Revision history
Document ID
NX3V1T66_5
NX3V1T66_4
Modifications:
NX3V1T66_3
NX3V1T66_2
NX3V1T66_1
Release date
Data sheet status
Product data sheet
Product data sheet
Change notice
Supersedes
NX3V1T66_4
NX3V1T66_3
20100324
20100202
-
-
• Table 8: ON resistance (flatness) changed at VCC = 4.3 V.
20090504
20080724
20080327
Product data sheet
Product data sheet
Product data sheet
-
-
-
NX3V1T66_2
NX3V1T66_1
-
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
17 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
16. Legal information
16.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
suitable for use in medical, military, aircraft, space or life support equipment,
16.2 Definitions
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
16.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
16.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use in automotive applications — This NXP
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
18 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
17. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NX3V1T66_5
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 05 — 24 March 2010
19 of 20
NX3V1T66
NXP Semiconductors
Low-ohmic single-pole single-throw analog switch
18. Contents
1
2
3
4
5
6
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2
7
7.1
7.2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 3
Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3
8
Functional description . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Recommended operating conditions. . . . . . . . 4
9
10
11
Static characteristics. . . . . . . . . . . . . . . . . . . . . 5
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . . 6
ON resistance test circuit and graphs. . . . . . . . 7
11.1
11.2
11.3
12
Dynamic characteristics . . . . . . . . . . . . . . . . . . 9
Waveform and test circuits . . . . . . . . . . . . . . . 10
Additional dynamic characteristics . . . . . . . . . 11
Test circuits. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.1
12.2
12.3
13
14
15
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17
16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 18
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 18
16.1
16.2
16.3
16.4
17
18
Contact information. . . . . . . . . . . . . . . . . . . . . 19
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 March 2010
Document identifier: NX3V1T66_5
相关型号：
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MICROSEMI
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