NX5P3001UKZ_技术文档

NX5P3001

Bidirectional high-side power switch for charger and

USB-OTG combined applications

Rev. 1 — 11 September 2013

Product data sheet

1. General description

The NX5P3001 is an advanced bidirectional power switch and ESD-protection device for

combined USB-OTG and charger port applications. It includes undervoltage lockout,

overvoltage lockout and overtemperature protection circuits designed to automatically

isolate the power switch terminals when a fault condition occurs.

The device features two power switch input/output terminals (VBUSI and VBUSO), an

open-drain acknowledge output (ACK), an enable input which includes logic level

translation (EN) and low capacitance Transient Voltage Suppression (TVS) type

ESD-clamps for USB data and ID pins.

When EN is set HIGH the device enters a low-power mode, disabling all protection

circuits. When used in combined charger and USB-OTG applications the 30 V tolerant

VBUSI switch terminal is used as the supply and switch input when charging, for

USB-OTG the VBUSO switch terminal is used as the supply and switch input.

Designed for operation from 3.2 V to 6.35 V, it is used in battery charging and power

domain isolation applications to reduce power dissipation and extend battery life.

2. Features and benefits

 30 V tolerant VBUSI supply pin

 Wide supply voltage range from 3.2 V to 6.35 V

 Automatic switch operation for charging within the supply range

 I_SWmaximum 3 A continuous current

 Low ON resistance: 62 m (typical) at a supply voltage of 5.0 V

 1.8 V control logic input to open the switch

 Soft start turn-on slew rate

 Protection circuitry

 Overtemperature protection

 Overvoltage lockout

 Undervoltage lockout

 ESD protection:

 HBM ANSI/ESDA/JEDEC JS-001 Class 2 exceeds 2 kV

 CDM AEC standard Q100-01 (JESD22-C101E)

 IEC61000-4-2 contact discharge exceeds 8 kV for pins VBUSI, D, D+ and ID

 Specified from 40 C to +85 C

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

3. Applications

 Smart and feature phones

 Tablets, eBooks

4. Ordering information

Table 1.

Type number Package

Temperature range Name

Ordering information

Description

Version

NX5P3001UK 40 C to +85 C

WLCSP12 wafer level chip-scale package, 12 bumps;

body 1.36  1.66  0.51 mm (Backside Coating

included)

NX5P3001

5. Marking

Table 2.

Marking codes

Type number

Marking code

NX5P3001UK

X05P3

6. Functional diagram

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NX5P3001

All information provided in this document is subject to legal disclaimers.

Product data sheet

Rev. 1 — 11 September 2013

2 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

7. Pinning information

7.1 Pinning

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Fig 3. Pin configuration WLCSP12 package

Fig 4. Ball mapping for WLCSP12

7.2 Pin description

Table 3.

Symbol

VBUSO

VBUSI

ACK

Pin description

Description

A3, B2, B3

VBUSO (output/input supply)

VBUSI (input supply/output)

acknowledge condition indicator (open-drain output)

ground (0 V)

A1, A2, B1

C1

C2

C3

D1

D2

D3

GND

EN

enable input (active LOW)

ESD-protection I/O

D-

D+

ESD-protection I/O

ID

ESD-protection I/O

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

3 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

8. Functional description

Table 4.

Function table^[1]

VBUSI

< 3.2 V

EN

L

VBUSO

ACK

Operation mode

< 3.2 V

Z

0

Z

undervoltage lockout; switch open

enabled; switch closed; charging mode

enabled; switch closed; OTG mode

overtemperature protection; switch open

overvoltage lockout; switch open

disable; switch open

L

3.2 V < VBUSI < 6.35 V < 3.2 V

L

< 3.2 V

> 3.2 V

L

X

L

> 6.35 V

X

H

[1] H = HIGH voltage level; L = LOW voltage level, Z = high-impedance OFF-state.

8.1 EN-input

A HIGH on EN disables the N-channel MOSFET and all protection circuits putting the

device into a low-power mode. A LOW on EN enables the protection circuits and then the

N-channel MOSFET.

8.2 Undervoltage lockout

When EN is LOW and VBUSI and VBUSO < 3.2 V, the UnderVoltage LockOut (UVLO)

circuits disable the N-channel MOSFET. Once VBUSI or VBUSO > 3.3 V and no other

protection circuits are active, the state of the N-channel MOSFET is controlled by the EN

pin.

8.3 Overvoltage lockout

When EN is LOW and VBUSI > 6.35 V, the OverVoltage LockOut (OVLO) circuit disables

the N-channel MOSFET and sets the ACK output LOW. Once VBUSI < 6.25 V and no

other protection circuits are active, ACK is set high impedance and the state of the

N-channel MOSFET is controlled by the EN pin.

8.4 Overtemperature protection

When EN is LOW and the device temperature exceeds 125 C the overtemperature

protection (OTP) circuit disables the N-channel MOSFET and set the ACK output LOW.

Once the device temperature decreases to below 115 C and no other protection circuits

are active, ACK is set high impedance and the state of the N-channel MOSFET is

controlled by the EN pin.

8.5 ACK output

The ACK output is an open-drain output that requires an external pull-up resistor. If OVLO

or OTP circuits are activated the ACK output is set LOW to indicate that a fault has

occurred. The ACK output will return to high impedance state automatically once the fault

condition is removed or EN is HIGH.

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

4 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

9. Application diagram

The NX5P3001 typically connects a USB port in a portable, battery operated device. The

ACK signal requires an additional external pull-up resistor which should be connected to a

supply voltage matching the logic input pin supply level it is connected to.

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Fig 5. NX5P3001 application diagram

10. Limiting values

Table 5.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

VBUSI

Min

0.5

50

-

Max

+32

+6.75

+6.0

-

Unit

V

[1]

[2]

[1]

V_I

input voltage

VBUSO

EN

V

D-, D+, ID

ACK

V

V_O

output voltage

V

I_IK

input clamping current

EN: V_I< 0.5 V

mA

A

I_SK

switch clamping current VBUSI; VBUSO; V_I< 0.5 V

-

I_SW

T_j(max)

switch current

T_amb= 85 °C

3

maximum junction

temperature

40

+125

C

T_stg

storage temperature

65

+150

C

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

5 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

Table 5.

Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

Min

Max

Unit

P_tot

total power dissipation

T_amb= 40 C to +85 C

WLCSP12 package

[3]

1.44

W

[1] The minimum and maximum switch voltage ratings may be exceeded if the switch clamping current rating is observed.

[2] The minimum input voltage rating may be exceeded if the input current rating is observed.

[3] For WLCSP12 package: P_totderates linearly with 13.7 mW/K above 20 C.

11. Recommended operating conditions

Table 6.

Recommended operating conditions

Symbol Parameter

Conditions

VBUSI

Min

3.0

0

Max

30

Unit

V_I

input voltage

V

VBUSO

EN

5.5

+85

V

V_I/O

input/output voltage

ambient temperature

D-, D+, ID

0

V

T_amb

40

C

12. Thermal characteristics

Table 7.

Symbol

R_th(j-a)

Thermal characteristics

Parameter

Conditions

Typ

Unit

[1][2]

thermal resistance from junction to ambient

73

K/W

[1] The overall Rth(j-a) can vary depending on the board layout. To minimize the effective Rth(j-a), all pins must have a solid connection to

larger Cu layer areas e.g. to the power and ground layer. In multi-layer PCB applications, the second layer should be used to create a

large heat spreader area right below the device. If this layer is either ground or power, it should be connected with several vias to the top

layer connecting to the device ground or supply. Try not to use any solder-stop varnish under the chip.

[2] Please rely on the measurement data given for a rough estimation of the Rth(j-a) in your application. The actual Rth(j-a) value may vary

in applications using different layer stacks and layouts

13. Static characteristics

Table 8.

Static characteristics

V_I(VBUSx)= 4.0 V to 5.5 V^[1]; unless otherwise specified; Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

T_amb= 25 C

Min Typ^[2]

Max

T_amb= 40 C to +85 C Unit

Min

Max

V_IH

V_IL

HIGH-level input EN

voltage

1.2

-

1.2

-

V

LOW-level input

voltage

EN

-

0.4

0.5

-

0.4

0.5

V_OL

LOW-level output ACK; I_O= 8 mA

voltage

R_pu

V_pu

pull-up resistance ACK

10

-

200

5.5

10

200

5.5

k

pull-up voltage

ACK

1.65

V

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

6 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

Table 8.

Static characteristics …continued

V_I(VBUSx)= 4.0 V to 5.5 V^[1]; unless otherwise specified; Voltages are referenced to GND (ground = 0 V).

Symbol

Parameter

Conditions

T_amb= 25 C

Min Typ^[2]

Max

T_amb= 40 C to +85 C Unit

Min

Max

I_GND

ground current

EN = LOW; I_O= 0 A;

see Figure 6 to Figure 11

-

280

-

400

A

EN = HIGH; I_O= 0 A;

see Figure 6 to Figure 11

8

16

[3]

[4]

I_S(OFF)

OFF-state

leakage current

V_I(VBUSI)= 5.5 V;

V_I(VBUSO)= 0 V to 5 V;

see Figure 12

-

0.1

-

6.5

V_I(VBUSO)= 5.5 V;

0.1

8.5

A

V_I(VBUSI)= 0 V to 30 V;

see Figure 13

V_UVLO

undervoltage

lockout voltage

VBUSI; VBUSO; EN = LOW

3.0

-

3.2

3.4

-

3.0

-

3.4

-

V

V_hys(UVLO)undervoltage

lockouthysteresis

VBUSI; VBUSO; EN = LOW

100

mV

voltage

V_OVLO

overvoltage

lockout voltage

VBUSI; EN = LOW

6.1

-

6.35

100

6.8

-

6.1

-

6.8

-

V

V_hys(OVLO)overvoltage

lockouthysteresis

mV

voltage

[1]

C_I/O

input/output

capacitance

D-; D+; ID; V_I(VBUSx)= 5.5 V

-

3

-

pF

C_I

input capacitance EN

-

3

-

pF

nF

C_S(ON)

ON-state

VBUSI; VBUSO

0.5

capacitance

[1] VBUSx is the supply voltage associated with the input, either VBUSI or VBUSO.

[2] All typical values are measured at V_I(VBUSx)= 5.0 V unless otherwise specified.

[3] Typical value is measured at V_I(VBUSO)= 0 V.

[4] Typical value is measured at V_I(VBUSI)= 0 V.

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

7 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

13.1 Graphs

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V_I(VBUSI)= 5.5 V

V_I(VBUSO)= 5.5 V

(1) Enabled

(2) Disabled

(1) Enabled

(2) Disabled

Fig 6. Ground current versus temperature

Fig 7. Ground current versus temperature

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EN = H

(1) T_amb= 85 C.

(2) _amb= 25 C.

(3) T_amb= 40 C.

EN = L

(1) T_amb= 85 C. b

(2) _amb= 25 C.

(3) T_amb= 40 C.

T

Fig 8. Ground current versus input voltage on pin

VBUSI or VBUSO

Fig 9. Ground current versus input voltage on pin

VBUSI or VBUSO

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

8 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

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V_I(VBUSO)= 5.5 V

Fig 10. Ground current versus input voltage on pin EN Fig 11. Ground current versus input voltage on pin EN

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V_I(VBUSI)= 5.5 V

V_I(VBUSO)= 5.5 V

Fig 12. OFF-state leakage current versus input voltage

on pin VBUSO

Fig 13. OFF-state leakage current versus input voltage

on pin VBUSI

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

9 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

13.2 ON resistance

Table 9.

ON resistance

At recommended operating conditions; voltages are referenced to GND (ground = 0 V)

Symbol Parameter

Conditions

T_amb= 25 C

T_amb= 40 C to +85 C Unit

Min Typ Max

Min

Max

[1]

R_ON

ON resistance V_I(VBUSx)= 4.0 V to 5.5 V;

see Figure 14 to Figure 18

I_LOAD= 200 mA

I_LOAD= 1.5 A

-

62

-

40

100

m

[1] VBUSx is the supply voltage associated with the input, either VBUSI or VBUSO.

13.3 ON resistance test circuit and graphs

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Fig 14. Test circuit for measuring ON resistance

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V_I(VBUSI)= 4.0 V and 5.5 V

V_I(VBUSO)= 4.0 V and 5.5 V

Fig 15. ON resistance versus temperature

Fig 16. ON resistance versus temperature

NX5P3001

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Product data sheet

Rev. 1 — 11 September 2013

10 of 20

NX5P3001

NXP Semiconductors

Bidirectional power switch for charger and USB-OTG combinations

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(1) T_amb= 40 C.

(2) _amb= 25 C.

(3) T_amb= 85 C.

(1)

(2)

T

_amb= 40 C.

_amb= 25 C.

T

(3) T_amb= 85 C.

Fig 17. ON resistance versus input voltage on pin

VBUSI

Fig 18. ON resistance versus input voltage on pin

VBUSO

14. Dynamic characteristics

Table 10. Dynamic characteristics

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 20.

Symbol Parameter

Conditions

T_amb= 25 C

T_amb= 40 C to +85 C

Unit

Min

Typ

Max

Min

Max

t_en

enable time

EN to VBUSO; see Figure 19

and Figure 21 to Figure 24

V_I(VBUSI)= 4.0 V

V_I(VBUSI)= 5.5 V

-

500

-

210

200

-

s

EN to VBUSI; see Figure 19

and Figure 21 to Figure 24

V_I(VBUSO)= 4.0 V

V_I(VBUSO)= 5.5 V

-

500

-

310

290

-

s

t_dis

disable time

EN to VBUSO; see Figure 19

and Figure 25 to Figure 28

V_I(VBUSI)= 4.0 V

V_I(VBUSI)= 5.5 V

-

1.6

-

ms

EN to VBUSI; see Figure 19

and Figure 25 to Figure 28

V_I(VBUSO)= 4.0 V

V_I(VBUSO)= 5.5 V

-

1.6

-

ms

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Table 10. Dynamic characteristics …continued

At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for test circuit see Figure 20.

Symbol Parameter

Conditions

T_amb= 25 C

T_amb= 40 C to +85 C

Unit

Min

Typ

Max

Min

Max

t_on

turn-on time

EN to VBUSO; see Figure 19

V_I(VBUSI)= 4.0 V

-

1500

1600

-

880

920

-

s

V_I(VBUSI)= 5.5 V

EN to VBUSI; see Figure 19

V_I(VBUSO)= 4.0 V

-

1500

1700

-

820

880

-

s

V_I(VBUSO)= 5.5 V

t_off

turn-off time

EN to VBUSO; see Figure 19

V_I(VBUSI)= 4.0 V

-

34.6

-

ms

V_I(VBUSI)= 5.5 V

EN to VBUSI; see Figure 19

V_I(VBUSO)= 4.0 V

-

34.6

-

ms

V_I(VBUSO)= 5.5 V

t_TLH

LOW to HIGH VBUSO; see Figure 19

output

transition time

V_I(VBUSI)= 4.0 V

-

1000

1100

-

670

720

-

s

V_I(VBUSI)= 5.5 V

VBUSI; see Figure 19

V_I(VBUSO)= 4.0 V

-

1000

1200

-

510

590

-

s

V_I(VBUSO)= 5.5 V

t_THL

HIGH to LOW VBUSO; see Figure 19

output

transition time

V_I(VBUSI)= 4.0 V

-

33.0

-

ms

V_I(VBUSI)= 5.5 V

VBUSI; see Figure 19

V_I(VBUSO)= 4.0 V

V_I(VBUSO)= 5.5 V

-

33.0

-

ms

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14.1 Waveforms and test circuit

9

,

(1ꢅLQSXW

*1'

9

0

W

RQ

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;

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DDDꢀꢁꢁꢂꢃꢃꢃ

Measurement points are given in Table 11.

Logic level: V_OHis the typical output voltage that occurs with the output load.

Fig 19. Switching times

Table 11. Measurement points

Supply voltage

EN Input

V_M

Output

V_X

VBUSx

V_Y

4.0 V to 5.5 V

0.5  V_I(EN)

0.1  V_OH

0.9  V_OH

(1

9%86[

*

9

(;7

5

/

&

/

9

,

DDDꢀꢁꢁꢂꢃꢃꢅ

Test data is given in Table 12.

Definitions test circuit:

R_L= Load resistance.

C_L= Load capacitance including jig and probe capacitance.

V_EXT= External voltage for measuring switching times.

Fig 20. Test circuit for measuring switching times

Table 12. Test data

Supply voltage

V_EXT

Input

Load

C_L

V_I

R_L

4.0 V to 5.5 V

1.5 V

100 F

150 

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DDDꢀꢁꢁꢂꢃꢃꢂ

DDDꢀꢁꢁꢂꢃꢃꢆ

ꢊꢆꢌ

9%862ꢐꢅ(1

ꢈ9ꢉ

ꢍꢋꢋ

ꢊꢆꢌ

9%86,ꢐꢅ(1

ꢈ9ꢉ

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,

,ꢈ9%86,ꢉ

ꢈP$ꢉ

,ꢈ9%862ꢉ

ꢈP$ꢉ

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ꢃꢆꢏ

ꢂꢆꢇ

ꢋꢆꢎ

ꢋ

ꢊꢇꢋ

ꢄꢍꢋ

ꢃꢊꢋ

ꢂꢃꢋ

ꢋ

ꢄꢆꢍ

ꢃꢆꢏ

ꢂꢆꢇ

ꢋꢆꢎ

ꢃꢃꢊꢋ

ꢂꢍꢇꢋ

ꢂꢂꢃꢋ

ꢌꢍꢋ

ꢋ

ꢈꢂꢉ

ꢈꢄꢉ

ꢈꢂꢉ

ꢈꢄꢉ

ꢈꢃꢉ

ꢋ

ꢋꢆꢌ

ꢂ

ꢂꢆꢌ

ꢃ

ꢃꢆꢌ

ꢋꢆꢌ

ꢂ

ꢂꢆꢌ

ꢃ

ꢃꢆꢌ

WꢅꢈPVꢉ

V_I(VBUSI)= 4.0 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSO

V_I(VBUSO)= 4.0 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSI

(2) EN

(3) I_I(VBUSI)

(3) I_I(VBUSO)

Fig 21. Enable time and in-rush current

Fig 22. Enable time and in-rush current

DDDꢀꢁꢁꢂꢃꢂꢃ

DDDꢀꢁꢁꢂꢃꢅꢇ

ꢍ

9%862ꢐꢅ(1

ꢈ9ꢉ

ꢎꢋꢋ

ꢍ

9%86,ꢐꢅ(1

ꢈ9ꢉ

ꢄꢋꢋꢋ

,

,ꢈ9%86,ꢉ

ꢈP$ꢉ

,ꢈ9%862ꢉ

ꢈP$ꢉ

ꢊꢆꢇ

ꢄꢆꢍ

ꢃꢆꢊ

ꢂꢆꢃ

ꢏꢃꢋ

ꢌꢊꢋ

ꢄꢍꢋ

ꢂꢇꢋ

ꢋ

ꢊꢆꢇ

ꢄꢆꢍ

ꢃꢆꢊ

ꢂꢆꢃ

ꢃꢊꢋꢋ

ꢂꢇꢋꢋ

ꢂꢃꢋꢋ

ꢍꢋꢋ

ꢋ

ꢈꢂꢉ

ꢈꢄꢉ

ꢈꢃꢉ

ꢈꢄꢉ

ꢈꢃꢉ

ꢋ

ꢋꢆꢌ

ꢂ

ꢂꢆꢌ

ꢃ

ꢃꢆꢌ

ꢋꢆꢌ

ꢂ

ꢂꢆꢌ

ꢃ

ꢃꢆꢌ

WꢅꢈPVꢉ

V_I(VBUSI)= 5.5 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSO

V_I(VBUSO)= 5.5 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSI

(2) EN

(3) I_I(VBUSI)

(3) I_I(VBUSO)

Fig 23. Enable time and in-rush current

Fig 24. Enable time and in-rush current

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Product data sheet

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DDDꢀꢁꢁꢂꢃꢅꢉ

DDDꢀꢁꢁꢂꢃꢅꢊ

ꢌ

ꢄꢋ

ꢌ

ꢄꢋ

9%862ꢐꢅ(1

ꢈ9ꢉ

9%86,ꢐꢅ(1

ꢈ9ꢉ

,

,ꢈ9%86,ꢉ

ꢈP$ꢉ

,ꢈ9%862ꢉ

ꢈP$ꢉ

ꢈꢃꢉ

ꢊ

ꢃꢊ

ꢂꢇ

ꢂꢃ

ꢍ

ꢊ

ꢄ

ꢃ

ꢂ

ꢃꢊ

ꢂꢇ

ꢂꢃ

ꢍ

ꢄ

ꢃ

ꢈꢂꢉ

ꢈꢄꢉ

ꢂ

ꢈꢄꢉ

ꢋ

ꢂꢎ

ꢄꢇ

ꢌꢏ

ꢏꢍ

ꢎꢌ

ꢂꢎ

ꢄꢇ

ꢌꢏ

ꢏꢍ

ꢎꢌ

WꢅꢈPVꢉ

V_I(VBUSI)= 4.0 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSO

V_I(VBUSO)= 4.0 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSI

(2) EN

(3) I_I(VBUSI)

(3) I_I(VBUSO)

Fig 25. Disable time

Fig 26. Disable time

DDDꢀꢁꢁꢂꢃꢂꢅ

DDDꢀꢁꢁꢂꢃꢅꢈ

ꢍ

ꢄꢏ

ꢍ

ꢄꢇ

ꢈꢃꢉ

9%862ꢐꢅ(1

,

,ꢈ9%86,ꢉ

ꢈP$ꢉ

9%86,ꢐꢅ(1

,

ꢈ9ꢉ

,ꢈ9%862ꢉ

ꢈP$ꢉ

ꢈ9ꢉ

ꢊꢆꢇ

ꢃꢎꢆꢍ

ꢃꢃꢆꢃ

ꢂꢊꢆꢇ

ꢏꢆꢊ

ꢊꢆꢌ

ꢃꢇꢆꢌ

ꢂꢎ

ꢄꢆꢍ

ꢃꢆꢊ

ꢄ

ꢈꢂꢉ

ꢈꢄꢉ

ꢂꢆꢌ

ꢋ

ꢎꢆꢌ

ꢋ

ꢂꢆꢃ

ꢈꢄꢉ

ꢋ

ꢂꢎ

ꢄꢇ

ꢌꢏ

ꢏꢍ

ꢎꢌ

ꢋ

ꢂꢎ

ꢄꢇ

ꢌꢏ

ꢏꢍ

ꢎꢌ

WꢅꢈPVꢉ

V_I(VBUSI)= 5.5 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSO

V_I(VBUSO)= 5.5 V; R_L= 150 ; C_L= 100 F; T_amb= 25 C

(1) VBUSI

(2) EN

(3) I_I(VBUSI)

(3) I_I(VBUSO)

Fig 27. Disable time

Fig 28. Disable time

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Product data sheet

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15. Package outline

:/&63ꢃꢄꢅꢆZDIHUꢆOHYHOꢆFKLSꢇVFDOHꢆSDFNDJHꢈ

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1;ꢀ3ꢁꢂꢂꢃ

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(

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LQGH[ꢅDUHD

ꢃ

$

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$

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GHWDLOꢅ;

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&

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$ %

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Z

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PD[ ꢋꢆꢌꢌ ꢋꢆꢃꢄ ꢋꢆꢄꢊ ꢋꢆꢃꢎ ꢂꢆꢍꢎ ꢂꢆꢄꢎ

QRP

PP

ꢋꢆꢌꢂ ꢋꢆꢃꢋ ꢋꢆꢄꢂ ꢋꢆꢃꢍ ꢂꢆꢍꢍ ꢂꢆꢄꢍ

ꢋꢆꢊ

ꢋꢆꢇ

ꢂꢆꢃ ꢋꢆꢋꢌ ꢋꢆꢂꢌ ꢋꢆꢋꢄ

PLQ ꢋꢆꢊꢏ ꢋꢆꢂꢏ ꢋꢆꢃꢎ ꢋꢆꢃꢄ ꢂꢆꢍꢄ ꢂꢆꢄꢄ

ZOFVSꢇꢉBQ[ꢈSꢊꢁꢁꢇBSR

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-(,7$

ꢂꢄꢁꢋꢄꢁꢃꢎ

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1;ꢌ3ꢄꢋꢋꢂ

Fig 29. Package outline WLCSP12 package

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Product data sheet

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16. Abbreviations

Table 13. Abbreviations

Acronym

CDM

Description

Charged Device Model

DUT

Device Under Test

ESD

ElectroStatic Discharge

HBM

Human Body Model

MOSFET

OTP

Metal-Oxide Semiconductor Field Effect Transistor

OverTemperature Protection

Universal Serial Bus On-The-Go

UnderVoltage LockOut

USB-OTG

UVLO

OVLO

OverVoltage LockOut

17. Revision history

Table 14. Revision history

Document ID

Release date

Data sheet status

Change notice

Supersedes

NX5P3001 v.1

20130911

Product data sheet

-

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18. Legal information

18.1 Data sheet status

Document status^[1][2]

Product status^[3]

Development

Definition

Objective [short] data sheet

This document contains data from the objective specification for product development.

This document contains data from the preliminary specification.

This document contains the product specification.

Preliminary [short] data sheet Qualification

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Definitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

Suitability for use — NXP Semiconductors products are not designed,

18.2 Definitions

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

damage. NXP Semiconductors and its suppliers accept no liability for

inclusion and/or use of NXP Semiconductors products in such equipment or

applications and therefore such inclusion and/or use is at the customer’s own

risk.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall prevail.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and operation of their applications

and products using NXP Semiconductors products, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suitable and fit for the customer’s applications and

products planned, as well as for the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associated with their

applications and products.

Product specification — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to offer functions and qualities beyond those described in the

Product data sheet.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for the customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

18.3 Disclaimers

Limited warranty and liability — Information in this document is believed to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information. NXP Semiconductors takes no

responsibility for the content in this document if provided by an information

source outside of NXP Semiconductors.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequential damages (including - without limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an offer to sell products that is open for acceptance or the grant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property rights.

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Product data sheet

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Export control — This document as well as the item(s) described herein

may be subject to export control regulations. Export might require a prior

authorization from competent authorities.

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It is neither qualified nor tested

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

Translations — A non-English (translated) version of a document is for

reference only. The English version shall prevail in case of any discrepancy

between the translated and English versions.

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and standards, customer

(a) shall use the product without NXP Semiconductors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

18.4 Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

19. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

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Product data sheet

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20. Contents

1

2

3

4

5

6

General description. . . . . . . . . . . . . . . . . . . . . . 1

Features and benefits . . . . . . . . . . . . . . . . . . . . 1

Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Ordering information. . . . . . . . . . . . . . . . . . . . . 2

Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

Functional diagram . . . . . . . . . . . . . . . . . . . . . . 2

7

7.1

7.2

Pinning information. . . . . . . . . . . . . . . . . . . . . . 3

Pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3

Pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3

8

Functional description . . . . . . . . . . . . . . . . . . . 4

EN-input . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

Undervoltage lockout . . . . . . . . . . . . . . . . . . . . 4

Overvoltage lockout . . . . . . . . . . . . . . . . . . . . . 4

Overtemperature protection . . . . . . . . . . . . . . . 4

ACK output . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4

8.1

8.2

8.3

8.4

8.5

9

Application diagram . . . . . . . . . . . . . . . . . . . . . 5

Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 5

Recommended operating conditions. . . . . . . . 6

Thermal characteristics . . . . . . . . . . . . . . . . . . 6

10

11

12

13

Static characteristics. . . . . . . . . . . . . . . . . . . . . 6

Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8

ON resistance. . . . . . . . . . . . . . . . . . . . . . . . . 10

ON resistance test circuit and graphs. . . . . . . 10

13.1

13.2

13.3

14

14.1

15

Dynamic characteristics . . . . . . . . . . . . . . . . . 11

Waveforms and test circuit . . . . . . . . . . . . . . . 13

Package outline . . . . . . . . . . . . . . . . . . . . . . . . 16

Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 17

Revision history. . . . . . . . . . . . . . . . . . . . . . . . 17

16

17

18

Legal information. . . . . . . . . . . . . . . . . . . . . . . 18

Data sheet status . . . . . . . . . . . . . . . . . . . . . . 18

Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 18

Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 19

18.1

18.2

18.3

18.4

19

20

Contact information. . . . . . . . . . . . . . . . . . . . . 19

Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 September 2013

Document identifier: NX5P3001


型号：	NX5P3001UKZ
厂家：	NXP
描述：	NX5P3001 - Bidirectional high-side power switch for charger and USB‑OTG combined applications
文件：	总20页 (文件大小：281K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

NX5P3001UKZ [NXP]

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