NX7002AKW,115 [NXP]
NX7002AKW - 60 V, single N-channel Trench MOSFET SC-70 3-Pin;型号: | NX7002AKW,115 |
厂家: | NXP |
描述: | NX7002AKW - 60 V, single N-channel Trench MOSFET SC-70 3-Pin 开关 光电二极管 晶体管 |
文件: | 总14页 (文件大小:198K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
NX7002AKW
60 V, single N-channel Trench MOSFET
11 July 2012
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70)
Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.2 Features and benefits
Very fast switching
Trench MOSFET technology
ESD protected
•
•
•
1.3 Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side loadswitch
Switching circuits
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
60
Unit
V
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
-20
-
20
V
VGS = 10 V; Tamb = 25 °C
[1]
170
mA
Static characteristics
RDSon drain-source on-state
VGS = 10 V; ID = 100 mA; Tj = 25 °C
-
3
4.5
Ω
resistance
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[1]
Scan or click this QR code to view the latest information for this product
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
2. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D
3
1
2
3
G
S
D
gate
source
drain
G
1
2
SC-70 (SOT323)
S
017aaa255
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
NX7002AKW
SC-70
plastic surface-mounted package; 3 leads
SOT323
4. Marking
Table 4.
Marking codes
Type number
Marking code
[1]
NX7002AKW
AH%
[1] % = placeholder for manufacturing site code
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
60
Unit
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
V
VGS
-20
20
V
ID
VGS = 10 V; Tamb = 25 °C
VGS = 10 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
-
-
-
-
-
170
100
680
220
255
mA
mA
mA
mW
mW
IDM
Ptot
peak drain current
total power dissipation
[2]
[1]
NX7002AKW
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Product data sheet
11 July 2012
2 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
-
Max
Unit
Tsp = 25 °C
1060 mW
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
Source-drain diode
IS source current
Tamb = 25 °C
[1]
-
170
mA
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
[1]
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
NX7002AKW
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Product data sheet
11 July 2012
3 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa482
1
Limit R
= V /I
DS
DSon
D
I
D
(A)
(1)
(2)
-1
-2
-3
10
(3)
(4)
10
10
(5)
(6)
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
(1) tp = 100 µs
(2) tp = 1 ms
(3) tp = 10 ms
(4) DC; Tsp = 25 °C
(5) tp = 100 ms
(6) DC; Tamb = 25 °C; drain mounting pad 1 cm2
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
6. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
485
420
Max
560
480
Unit
K/W
K/W
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
Rth(j-sp)
thermal resistance
from junction to solder
point
-
-
115
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
NX7002AKW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 July 2012
4 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa483
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.01
0.02
10
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
017aaa484
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
0.33
0.2
0.25
2
10
0.1
0.05
0.01
0.02
10
0
1
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 1 cm2
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
7. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS drain-source
breakdown voltage
ID = 250 µA; VGS = 0 V; Tj = 25 °C
60
-
-
V
V
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
1.1
1.6
2.1
IDSS
drain leakage current
VDS = 60 V; VGS = 0 V; Tj = 25 °C
-
-
-
-
1
µA
µA
VDS = 60 V; VGS = 0 V; Tj = 150 °C
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11 July 2012
10
NX7002AKW
© NXP B.V. 2012. All rights reserved
Product data sheet
5 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
2
Unit
µA
µA
µA
µA
nA
nA
Ω
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; VDS = 0 V; Tj = 25 °C
VGS = -10 V; VDS = 0 V; Tj = 25 °C
VGS = 5 V; VDS = 0 V; Tj = 25 °C
VGS = -5 V; VDS = 0 V; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 25 °C
VGS = 10 V; ID = 100 mA; Tj = 150 °C
VGS = 5 V; ID = 100 mA; Tj = 25 °C
VDS = 10 V; ID = 200 mA; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
2
-
0.5
0.5
100
100
4.5
9.2
5.2
-
-
-
-
RDSon
drain-source on-state
resistance
3
6.2
3.7
230
Ω
Ω
gfs
forward
mS
transconductance
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
VDS = 30 V; ID = 200 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.33
0.12
0.09
11
0.43
nC
nC
nC
pF
pF
pF
gate-source charge
gate-drain charge
input capacitance
output capacitance
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
17
-
Coss
Crss
3.4
reverse transfer
capacitance
1.4
-
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 40 V; RL = 250 Ω; VGS = 10 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
6
12
-
ns
ns
ns
ns
7
turn-off delay time
fall time
20
14
40
-
Source-drain diode
VSD
source-drain voltage
IS = 115 mA; VGS = 0 V; Tj = 25 °C
0.47
0.7
1.2
V
NX7002AKW
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Product data sheet
11 July 2012
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NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa469
017aaa470
-3
-4
-5
-6
0.20
10
D
10 V
5 V
I
D
V
= 3 V
GS
3.5 V
I
(A)
(A)
0.15
10
(1)
(2)
(3)
0.10
0.05
0
2.5 V
10
10
2 V
3
0
1
2
4
0
1
2
3
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
(1) minimum values
(2) typical values
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 7. Sub-threshold drain current as a function of
gate-source voltage
017aaa471
017aaa472
10
12
R
DSon
(Ω)
3.0 V
2.5 V
R
DSon
(Ω)
8
8
6
4
2
0
(1)
3.5 V
4
0
4.0 V
5.0 V
10 V
(2)
0
0.05
0.10
0.15
0.20
0
2
4
6
8
10
(V)
I
(A)
V
GS
D
Tj = 25 °C
ID = 0.2 A
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function
of drain current; typical values
Fig. 9. Drain-source on-state resistance as a function
of gate-source voltage; typical values
NX7002AKW
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Product data sheet
11 July 2012
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NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa473
017aaa474
0.20
2.0
1.5
1.0
0.5
0
(1)
(2)
I
a
D
(A)
0.15
0.10
0.05
0
(2)
(1)
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa475
017aaa476
2
2.5
10
V
GS(th)
(V)
C
(pF)
(1)
(2)
2.0
.1.5
1.0
0.5
0
(1)
10
(2)
(3)
(3)
1
-1
10
-1
2
-60
0
60
120
180
10
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
NX7002AKW
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Product data sheet
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NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
017aaa477
10
V
DS
V
GS
(V)
I
8
6
4
2
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
0.2
0.4
0.6
0.8
Q
G
(nC)
ID = 0.2 A; VDS = 30 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa478
0.20
I
S
(A)
0.15
(1)
(2)
0.10
0.05
0
0
0.4
0.8
1.2
V
(V)
SD
VGS = 0 V
(1) Tj = 150 °C
(2) Tj = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
NX7002AKW
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Product data sheet
11 July 2012
9 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
8. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
9. Package outline
2.2
1.8
1.1
0.8
0.45
0.15
3
2.2 1.35
2.0 1.15
1
2
0.4
0.3
0.25
0.10
1.3
Dimensions in mm
04-11-04
Fig. 18. SC-70 (SOT323)
10. Soldering
2.65
1.85
1.325
solder lands
solder resist
2
1
3
0.6
2.35
solder paste
occupied area
1.3
(3×)
0.5
(3×)
Dimensions in mm
0.55
(3×)
sot323_fr
Fig. 19. Reflow soldering footprint for SOT323 (SC-70)
NX7002AKW
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Product data sheet
11 July 2012
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NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
4.6
2.575
1.425
(3×)
solder lands
solder resist
occupied area
1.8
3.65 2.1
Dimensions in mm
preferred transport
direction during soldering
09
(2×)
sot323_fw
Fig. 20. Wave soldering footprint for SOT323 (SC-70)
11. Revision history
Table 8.
Revision history
Data sheet ID
NX7002AKW v.2
Modifications:
Release date
Data sheet status
Product data sheet
Change notice
Supersedes
20120711
-
NX7002AKW v.1
Characteristics: IGSS value corrected
•
NX7002AKW v.1
20120301 Product data sheet
-
-
NX7002AKW
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Product data sheet
11 July 2012
11 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
In no event shall NXP Semiconductors be liable for any indirect, incidental,
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or replacement of any products or rework charges) whether or not such
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customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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Applications — Applications that are described herein for any of these
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the accuracy or completeness of information included herein and shall have
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applications and products using NXP Semiconductors products, and NXP
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the Absolute Maximum Ratings System of IEC 60134) will cause permanent
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NX7002AKW
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Product data sheet
11 July 2012
12 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
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trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
NX7002AKW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 July 2012
13 / 14
NXP Semiconductors
NX7002AKW
60 V, single N-channel Trench MOSFET
13. Contents
1
Product profile ....................................................... 1
General description .............................................. 1
Features and benefits ...........................................1
Applications ..........................................................1
Quick reference data ............................................ 1
1.1
1.2
1.3
1.4
2
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................2
Thermal characteristics .........................................4
Characteristics .......................................................5
Test information ...................................................10
Package outline ................................................... 10
Soldering .............................................................. 10
Revision history ...................................................11
3
4
5
6
7
8
9
10
11
12
Legal information .................................................12
Data sheet status ............................................... 12
Definitions ...........................................................12
Disclaimers .........................................................12
Trademarks ........................................................ 13
12.1
12.2
12.3
12.4
© NXP B.V. 2012. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 July 2012
NX7002AKW
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved
Product data sheet
11 July 2012
14 / 14
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