OM3105N [NXP]

Hybrid integrated circuits for inductive proximity detectors; 电感式接近探测器混合集成电路
OM3105N
型号: OM3105N
厂家: NXP    NXP
描述:

Hybrid integrated circuits for inductive proximity detectors
电感式接近探测器混合集成电路

文件: 总8页 (文件大小:38K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
OM3105P  
Hybrid integrated circuits for  
inductive proximity detectors  
January 1994  
Preliminary specification  
File under Discrete Semiconductors, SC17  
Philips Semiconductors  
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
FEATURES  
DESCRIPTION  
Extra small dimensions (3 x 20 mm max.)  
Wide supply voltage range (6 to 35 V)  
The OM3105P is a hybrid integrated circuit intended for  
inductive proximity detectors in a tubular construction,  
especially the M5 hollow stud. The circuit performs a make  
function (version 1): when actuated, the current flows  
through the load, which can be for example a LED or an  
optocoupler. It is also possible to perform a break function  
when using version OM3115P.  
Supply current typical 1.5 mA (output stage  
switched off)  
High output current (250 mA max.)  
RC filter on the supply lines  
PNP output transistor protected against transients from  
Available versions:  
the inductive load  
OM3105P: pnp output; make function  
OM3115P: pnp output; break function  
OM3105N: npn output; make function  
OM3115N: npn output; break function  
OM31.5./0: for external LED connection.  
Circuit protected against wrong polarity connection of  
the supply voltage  
Electronic short-circuit protection  
Detection distance adjustable by a chip resistor (Rd),  
type 1206  
Only a simple coil in one part is required; e.g. the  
OM2860 requires a coil in two parts  
Hysteresis adjustable by a chip resistor (Rh), type 0603,  
for using the OM3105P with other then M5 coils  
Status of the output is shown by a yellow or red LED  
mounted on the substrate surface  
The OM3105P is also available without a LED, but with  
an output pad for external LED connection  
A version with a NPN output transistor is available  
(OM3105P).  
QUICK REFERENCE DATA  
SYMBOL  
PARAMETER  
DC supply voltage  
CONDITIONS  
TYP.  
MAX.  
35  
UNIT  
VB  
IO  
6
V
output current  
VB = 24 V; Ts = 25 °C  
250  
5
mA  
kHz  
°C  
fsw  
Ts  
operating switching frequency  
operating substrate temperature  
M5 coil  
20  
+70  
January 1994  
2
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
MECHANICAL DATA  
20 max  
8
3
3
max  
inductive  
load  
1
7
7.75 0.3  
5
2
MSA936 - 1  
4
6
Dimensions in mm.  
Coil: Ø 0.063 mm Cu wire, 80 turns.  
Potcore: 3.3 x 1.3 mm.  
Fig.1 Outline and connections.  
PAD INFORMATION  
PAD NUMBER  
DESCRIPTION  
1
2
3
4
5
6
7
8
output  
negative supply ()  
positive supply (+)  
coil connection  
coil connection  
Rd resistor (type 1206) for adjusting the detection distance  
Rt resistor (type 0603) for adjusting the stability with temperature variations  
Rh resistor (type 0603) for adjusting the hysteresis  
January 1994  
3
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134).  
SYMBOL  
PARAMETER  
MIN.  
MAX.  
UNIT  
VB  
IO  
DC supply voltage  
6
35  
V
output current; Ts = 25 °C  
storage temperature  
250  
mA  
°C  
°C  
Tstg  
Ts  
40  
20  
+125  
+70  
operating substrate temperature  
CHARACTERISTICS  
VB = 24 V (DC); Ts = 25 °C; unless otherwise specified.  
SYMBOL  
PARAMETER  
supply current  
CONDITIONS  
output stage ON  
TYP.  
MAX.  
UNIT  
IB  
11  
1.5  
1
mA  
mA  
V
output stage OFF  
IO = 250 mA  
coil M5  
Vd  
d
voltage drop  
1.5  
detection distance  
0.8  
mm  
MBD233  
MBD235  
1.0  
1.0  
d
d
(mm)  
(mm)  
d
off  
d
d
off  
on  
0.9  
0.9  
d
on  
0.8  
20  
0.8  
0
20  
40  
60  
80  
( C)  
6
12  
18  
24  
30  
(V)  
V
B
o
T
s
Fig.3 Switching distance as a function of the DC  
supply voltage.  
Fig.2 Switching distance as a function of the  
substrate temperature.  
January 1994  
4
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
MBD234  
400  
I
O max  
(mA)  
350  
300  
250  
200  
150  
20  
0
20  
40  
60  
80  
( C)  
o
T
s
Fig.4 Overload protection as a function of the substrate temperature.  
MOUNTING RECOMMENDATIONS  
Potting recommendations  
First cover the hybrid IC with about 0.5 mm of silicone  
rubber, let it harden and with the parts inserted in the tube,  
fill up the tube with epoxy.  
General  
If a protective cap is incorporated, it should be as thin as  
possible, because its thickness “d” forms part of the  
operating distance “S”.  
A brass stud wall should not extend beyond the potcore.  
The exact value of “S” with its spread is determined by a  
number of variables, e.g.:  
d
value of the adjustment resistor Rx,  
the oscillator coil,  
the metal of the actuator,  
the material and shape of the housing.  
Soldering recommendations  
Use normal 60/40 solder.  
Use a soldering iron with a fine point.  
Soldering time should be kept to a minimum, not  
exceeding 2.5 s per soldering point (Tsld = 250 °C  
maximum).  
MSB318  
The substrate should preferably be pre-heated to a  
temperature of 100 °C with a minimum of 80 °C and a  
maximum of 125 °C.  
Fig.5 Insertion of potcore in brass tube.  
January 1994  
5
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
DEFINITIONS  
Data sheet status  
Objective specification  
Preliminary specification  
Product specification  
This data sheet contains target or goal specifications for product development.  
This data sheet contains preliminary data; supplementary data may be published later.  
This data sheet contains final product specifications.  
Limiting values  
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or  
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation  
of the device at these or at any other conditions above those given in the Characteristics sections of the specification  
is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices, or systems where malfunction of these  
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for  
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such  
improper use or sale.  
January 1994  
6
Philips Semiconductors  
Preliminary specification  
Hybrid integrated circuits for inductive  
proximity detectors  
OM3105P  
NOTES  
January 1994  
7
Philips Semiconductors – a worldwide company  
Argentina: IEROD, Av. Juramento 1992 - 14.b, (1428)  
Pakistan: Philips Markaz, M.A. Jinnah Rd., KARACHI 3,  
BUENOS AIRES, Tel. (541)786 7633, Fax. (541)786 9367  
Tel. (021)577 039, Fax. (021)569 1832  
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,  
Tel. (02)805 4455, Fax. (02)805 4466  
Austria: Triester Str. 64, A-1101 WIEN, P.O. Box 213,  
Philippines: PHILIPS SEMICONDUCTORS PHILIPPINES Inc,  
106 Valero St. Salcedo Village, P.O. Box 911, MAKATI,  
Metro MANILA, Tel. (02)810 0161, Fax. (02)817 3474  
Tel. (01)60 101-1236, Fax. (01)60 101-1211  
Belgium: Postbus 90050, 5600 PB EINDHOVEN, The Netherlands,  
Portugal: Av. Eng. Duarte Pacheco 6, 1009 LISBOA Codex,  
Tel. (01)683 121, Fax. (01)658 013  
Tel. (31)40 783 749, Fax. (31)40 788 399  
Singapore: Lorong 1, Toa Payoh, SINGAPORE 1231,  
Brazil: Rua do Rocio 220 - 5th floor, Suite 51,  
CEP: 04552-903-SÃO PAULO-SP, Brazil.  
P.O. Box 7383 (01064-970).  
Tel. (65)350 2000, Fax. (65)251 6500  
South Africa: 195-215 Main Road, Martindale,  
P.O. Box 7430,JOHANNESBURG 2000,  
Tel. (011)470-5433, Fax. (011)470-5494  
Tel. (011)829-1166, Fax. (011)829-1849  
Spain: Balmes 22, 08007 BARCELONA,  
Tel. (03)301 6312, Fax. (03)301 42 43  
Sweden: Kottbygatan 7, Akalla. S-164 85 STOCKHOLM,  
Tel. (0)8-632 2000, Fax. (0)8-632 2745  
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,  
Tel. (01)488 2211, Fax. (01)481 7730  
Taiwan: 69, Min Sheng East Road, Sec 3, P.O. Box 22978,  
Canada: INTEGRATED CIRCUITS:  
Tel. (800)234-7381, Fax. (708)296-8556  
DISCRETE SEMICONDUCTORS: 601 Milner Ave,  
SCARBOROUGH, ONTARIO, M1B 1M8,  
Tel. (0416)292 5161 ext. 2336, Fax. (0416)292 4477  
Chile: Av. Santa Maria 0760, SANTIAGO,  
Tel. (02)773 816, Fax. (02)777 6730  
Colombia: Carrera 21 No. 56-17, BOGOTA, D.E., P.O. Box 77621,  
Tel. (571)217 4609, Fax. (01)217 4549  
Denmark:Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,  
TAIPEI 10446, Tel. (2)509 7666, Fax. (2)500 5899  
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,  
60/14 MOO 11, Bangna - Trad Road Km. 3  
Prakanong, BANGKOK 10260,  
Tel. (032)88 2636, Fax. (031)57 1949  
Tel. (2)399-3280 to 9, (2)398-2083, Fax. (2)398-2080  
Finland: Sinikalliontie 3, FIN-02630 ESPOO,  
Tel. (9)0-50261, Fax. (9)0-520971  
Turkey: Talatpasa Cad. No. 5, 80640 LEVENT/ISTANBUL,  
Tel. (0212)279 2770, Fax. (0212)269 3094  
France: 4 rue du Port-aux-Vins, BP317,  
92156 SURESNES Cedex,  
Tel. (01)4099 6161, Fax. (01)4099 6427  
Germany: P.O. Box 10 63 23, 20095 HAMBURG ,  
United Kingdom: Philips Semiconductors Limited, P.O. Box 65,  
Philips House, Torrington Place, LONDON, WC1E 7HD,  
Tel. (071)436 41 44, Fax. (071)323 03 42  
Tel. (040)3296-0, Fax. (040)3296 213  
United States:INTEGRATED CIRCUITS:  
811 East Arques Avenue, SUNNYVALE, CA 94088-3409,  
Tel. (800)234-7381, Fax. (708)296-8556  
Greece: No. 15, 25th March Street, GR 17778 TAVROS,  
Tel. (01)4894 339/4894 911, Fax. (01)4814 240  
DISCRETE SEMICONDUCTORS: 2001 West Blue Heron Blvd.,  
P.O. Box 10330, RIVIERA BEACH, FLORIDA 33404,  
Tel. (800)447-3762 and (407)881-3200, Fax. (407)881-3300  
Hong Kong: 15/F Philips Ind. Bldg., 24-28 Kung Yip St.,  
KWAI CHUNG, Tel. (0)4245 121, Fax. (0)4806 960  
India: PEICO ELECTRONICS & ELECTRICALS Ltd.,  
Components Dept., Shivsagar Estate, Block 'A',  
Dr. Annie Besant Rd., Worli, BOMBAY 400 018,  
Tel. (022)4938 541, Fax. (022)4938 722  
Uruguay: Coronel Mora 433, MONTEVIDEO,  
Tel. (02)70-4044, Fax. (02)92 0601  
Indonesia: Philips House, Jalan H.R. Rasuna Said Kav. 3-4,  
P.O. Box 4252, JAKARTA 12950,  
Tel. (021)5201 122, Fax. (021)5205 189  
Ireland: Newstead, Clonskeagh, DUBLIN 14,  
Tel. (01)640 000, Fax. (01)640 200  
Italy: Viale F. Testi, 327, 20162 MILANO,  
Tel. (02)6752.1, Fax. (02)6752.3350  
Japan: Philips Bldg 13-37, Kohnan2-chome, Minato-ku, KOKIO 108,  
Tel. (03)3740 5101, Fax. (03)3740 0570  
Korea: (Republic of) Philips House, 260-199 Itaewon-dong,  
For all other countries apply to: Philips Semiconductors,  
International Marketing and Sales, Building BAF-1,  
P.O. Box 218, 5600 MD, EINDHOVEN, The Netherlands,  
Telex 35000 phtcnl, Fax. +31-40-724825  
Yongsan-ku, SEOUL, Tel. (02)794-5011, Fax. (02)798-8022  
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA,  
SELANGOR, Tel. (03)757 5511, Fax. (03)757 4880  
Mexico: Philips Components, 5900 Gateway East, Suite 200,  
EL PASO, TX 79905, Tel. 9-5(800)234-7381, Fax. (708)296-8556  
Netherlands: Postbus 90050, 5600 PB EINDHOVEN,  
Tel. (040)78 37 49, Fax. (040)78 83 99  
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,  
SCD27  
© Philips Electronics N.V. 1993  
All rights are reserved. Reproduction in whole or in part is prohibited without the  
prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation  
or contract, is believed to be accurate and reliable and may be changed without  
notice. No liability will be accepted by the publisher for any consequence of its  
use. Publication thereof does not convey nor imply any license under patent- or  
other industrial or intellectual property rights.  
Tel. (09)849-4160, Fax. (09)849-7811  
Norway: Box 1, Manglerud 0612, OSLO,  
Tel. (22)74 8000, Fax. (22)74 8341  
Printed in The Netherlands  
9397 726 50011  
Philips Semiconductors  

相关型号:

OM3105P

Hybrid integrated circuits for inductive proximity detectors
NXP

OM3115N

Hybrid integrated circuits for inductive proximity detectors
NXP

OM3115P

Hybrid integrated circuits for inductive proximity detectors
NXP

OM320

RF/Microwave Amplifier, 40 MHz - 860 MHz RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
NXP

OM320

RF/Microwave Amplifier, Hybrid,
PHILIPS

OM323A

RF Amplifier
ETC

OM3305E-R58

RES 33 OHM 1W 5% AXIAL
OHMITE

OM3315

Res,Axial,Carbon Film,330 Ohms,500WV,5% +/-Tol
OHMITE

OM3315E-R58

RES 330 OHM 1W 5% AXIAL
OHMITE

OM3315EA26

暂无描述
OHMITE

OM3315ER52

Fixed Resistor, Carbon Film, 1W, 330ohm, 500V, 5% +/-Tol, 450ppm/Cel, Through Hole Mount, AXIAL LEADED, ROHS COMPLIANT
OHMITE

OM3325E

Fixed Resistor, Carbon Film, 1W, 3300ohm, 500V, 5% +/-Tol, -450ppm/Cel,
OHMITE