PBLS2023D [NXP]
20 V, 1.8 A PNP BISS loadswitch; 20 V , 1.8 A PNP BISS loadswitch型号: | PBLS2023D |
厂家: | NXP |
描述: | 20 V, 1.8 A PNP BISS loadswitch |
文件: | 总16页 (文件大小:116K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBLS2023D
20 V, 1.8 A PNP BISS loadswitch
Rev. 02 — 6 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface-Mounted Device (SMD)
plastic package.
1.2 Features
I Low VCEsat (BISS) and resistor-equipped transistor in one package
I Low threshold voltage (<1 V) compared to MOSFET
I Space-saving solution
I Reduction of component count
I AEC-Q101 qualified
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector current
open base
-
-
-
-
-
-
−20
−1.8
−3
V
A
A
ICM
peak collector current
single pulse;
tp ≤ 1 ms
[1]
RCEsat
collector-emitter saturation IC = −1.8 A;
-
78
117
mΩ
resistance
IB = −100 mA
TR2; NPN resistor-equipped transistor
VCEO
IO
collector-emitter voltage
output current
open base
-
-
50
V
-
-
100
13
mA
kΩ
R1
bias resistor 1 (input)
bias resistor ratio
7
10
1
R2/R1
0.8
1.2
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
base TR1
6
5
4
TR2
3
6
5
4
2
input (base) TR2
output (collector) TR2
GND (emitter) TR2
collector TR1
3
R2
R1
4
1
2
3
TR1
5
6
emitter TR1
1
2
006aab506
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
SOT457
PBLS2023D
SC-74
plastic surface-mounted package (TSOP6); 6 leads
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBLS2023D
KC
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
2 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1; PNP low VCEsat transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
open emitter
open base
-
-
-
-
-
−20
−20
−5
V
V
V
A
A
open collector
−1.8
−3
ICM
peak collector current
single pulse;
tp ≤ 1 ms
IB
base current
-
-
−300
−1
mA
A
IBM
peak base current
single pulse;
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
370
480
630
mW
mW
mW
TR2; NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
-
-
-
50
50
10
V
V
V
open collector
positive
-
-
-
-
+40
−10
100
100
V
negative
V
IO
output current
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
[1][2]
[3]
Ptot
total power dissipation
total power dissipation
T
amb ≤ 25 °C
-
200
mW
Per device
[1]
[2]
[3]
Ptot
Tamb ≤ 25 °C
-
480
mW
mW
mW
°C
-
590
-
760
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
3 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab507
1000
P
tot
(mW)
(1)
(2)
800
600
400
200
0
(3)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Per device: Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol
Per device
Rth(j-a)
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
[3]
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
260
211
165
100
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
4 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab508
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
2
10
0.20
0.10
0.02
0.05
10
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
006aab509
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
0.50
2
10
0.20
0.05
0.10
0.02
10
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
5 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab510
3
10
Z
th(j-a)
(K/W)
δ = 1
0.75
0.33
2
10
0.50
0.20
0.05
0.10
0.02
10
0.01
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse duration;
typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
TR1; PNP low VCEsat transistor
Min
Typ
Max Unit
ICBO
collector-base cut-off VCB = −20 V; IE = 0 A
-
-
-
-
−100 nA
current
VCB = −20 V; IE = 0 A;
−50
µA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = −16 V; VBE = 0 V
VEB = −5 V; IC = 0 A
-
-
-
-
−100 nA
−100 nA
emitter-base cut-off
current
DC current gain
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
220
420
410
320
260
−45
−85
−80
-
-
-
-
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
[1]
220
200
VCE = −2 V; IC = −1.8 A
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −1.8 A; IB = −100 mA
IC = −1 A; IB = −100 mA
IC = −1.8 A; IB = −100 mA
IC = −0.5 A; IB = −50 mA
IC = −1.8 A; IB = −100 mA
160
VCEsat
collector-emitter
saturation voltage
-
-
-
-
-
-
-
-
−70
mV
−130 mV
−120 mV
−140 −210 mV
RCEsat
collector-emitter
saturation resistance
80
78
120
117
mΩ
mΩ
V
VBEsat
base-emitter
saturation voltage
−0.85 −1
−0.93 −1.1
V
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
6 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
[1]
VBEon
base-emitter
VCE = −10 V; IC = −1 A
-
−0.73 −1.1
V
turn-on voltage
td
tr
delay time
VCC = −10 V; IC = −1 A;
-
-
-
-
-
-
-
17
-
-
-
-
-
-
-
ns
IBon = −50 mA;
rise time
33
ns
IBoff = 50 mA
ton
ts
turn-on time
storage time
fall time
50
ns
270
60
ns
tf
ns
toff
fT
turn-off time
transition frequency
330
130
ns
IC = −50 mA; VCE = −10 V;
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
-
45
-
-
pF
nA
f = 1 MHz
TR2; NPN resistor-equipped transistor
ICBO collector-base cut-off VCB = 50 V; IE = 0 A
100
current
ICEO
collector-emitter
cut-off current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
400
µA
hFE
DC current gain
VCE = 5 V; IC = 5 mA
30
-
-
-
-
VCEsat
collector-emitter
IC = 10 mA; IB = 0.5 mA
150
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage VCE = 5 V; IC = 100 µA
on-state input voltage VCE = 0.3 V; IC = 10 mA
bias resistor 1 (input)
-
1.1
1.8
10
1
0.8
-
V
2.5
7
V
13
1.2
2.5
kΩ
R2/R1
Cc
bias resistor ratio
0.8
-
collector capacitance VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
7 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab511
006aab512
800
−3
I
(mA) = −16.0
−12.8
B
−14.4
−11.2
h
FE
I
C
(1)
(2)
(A)
600
−9.6
−6.4
−3.2
−2
−8.0
−4.8
400
200
0
(3)
−1
−1.6
0
0.0
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−0.5
−1.0
−1.5
−2.0
I
V
(V)
CE
C
VCE = −2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
Fig 6. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
006aab513
006aab514
−1.2
−1.2
V
(V)
V
BE
BEsat
(V)
−1.0
−1.0
−0.8
−0.6
−0.4
−0.2
(1)
(2)
(3)
(1)
(2)
(3)
−0.8
−0.6
−0.4
−0.2
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
8 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab515
006aab516
−1
−1
V
V
CEsat
(V)
CEsat
(V)
−1
−1
−10
−10
−10
−10
−10
−10
(1)
(2)
(1)
(2)
−2
−2
(3)
(3)
−3
−3
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
006aab517
006aab518
3
3
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
2
2
10
10
10
10
(1)
(3)
(2)
1
1
(1)
(2)
−1
−1
10
10
(3)
−2
−2
10
10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
9 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aaa034
3
2
10
(1)
(2)
(3)
h
FE
10
10
1
10
−1
2
1
10
10
I
(mA)
C
VCE = 5 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values
006aaa036
006aaa037
10
10
V
I(on)
V
I(off)
(V)
(V)
(1)
(2)
(1)
(2)
(3)
1
1
(3)
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 14. TR2 (NPN): On-state input voltage as a
function of collector current; typical values
Fig 15. TR2 (NPN): Off-state input voltage as a
function of collector current; typical values
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
10 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
006aab521
006aaa035
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
−1
−1
10
10
−2
−2
10
10
2
2
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20
IC/IB = 50; Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 16. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 17. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
11 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 18. TR1: BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
VCC = −10 V; IC = −1 A; IBon = −50 mA; IBoff = 50 mA
Fig 19. TR1: Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
12 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 20. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
10000
-135
[2]
[3]
PBLS2023D
SOT457 4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-115
-125
-165
[1] For further information and the availability of packing methods, see Section 13.
[2] T1: normal taping
[3] T2: reverse taping
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
13 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
11. Revision history
Table 9.
Revision history
Document ID
PBLS2023D_2
Modifications:
PBLS2023D_1
Release date
Data sheet status
Change notice
Supersedes
20090906
Product data sheet
-
PBLS2023D_1
• Table 7 “Characteristics”: ICES conditions amended
20090717
Product data sheet
-
-
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
14 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
12. Legal information
12.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
12.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
12.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBLS2023D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 6 September 2009
15 of 16
PBLS2023D
NXP Semiconductors
20 V, 1.8 A PNP BISS loadswitch
14. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 12
Quality information . . . . . . . . . . . . . . . . . . . . . 12
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 13
Packing information. . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
8.1
9
10
11
12
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
12.1
12.2
12.3
12.4
13
14
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 September 2009
Document identifier: PBLS2023D_2
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