PBLS6003D/T1 [NXP]
TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal;型号: | PBLS6003D/T1 |
厂家: | NXP |
描述: | TRANSISTOR 100 mA, 50 V, 2 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-74, 6 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
文件: | 总16页 (文件大小:137K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBLS6003D
60 V PNP BISS loadswitch
Rev. 02 — 7 September 2009
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and
NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted
Device (SMD) plastic package.
1.2 Features
I Low VCEsat (BISS) transistor and resistor-equipped transistor in one package
I Low threshold voltage (< 1 V) compared to MOSFET
I Low drive power required
I Space-saving solution
I Reduction of component count
1.3 Applications
I Supply line switches
I Battery charger switches
I High-side switches for LEDs, drivers and backlights
I Portable equipment
1.4 Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
TR1; PNP low VCEsat transistor
VCEO
IC
collector-emitter voltage
collector current (DC)
open base
-
-
-
-
−60
−1
V
[1]
[2]
-
A
RCEsat
collector-emitter saturation IC = −1 A;
resistance IB = −100 mA
255
340
mΩ
TR2; NPN resistor-equipped transistor
VCEO
IO
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
-
50
V
-
-
100
13
mA
kΩ
R1
7
10
1
R2/R1
0.8
1.2
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Symbol
emitter TR1
6
5
4
6
5
4
2
base TR1
3
output (collector) TR2
GND (emitter) TR2
input (base) TR2
collector TR1
R1
R2
4
1
2
3
TR2
5
TR1
1
6
2
3
sym036
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
PBLS6003D
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBLS6003D
F3
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
2 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
TR1; PNP low VCEsat transistor
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
open emitter
open base
-
-
-
-
-
-
-
−80
−60
−5
V
V
open collector
V
[1]
[2]
[3]
−700
−850
−1
mA
mA
A
ICM
peak collector current
single pulse;
−2
A
tp ≤ 1 ms
IB
base current (DC)
peak base current
-
-
−300
−1
mA
A
IBM
single pulse;
tp ≤ 1 ms
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
-
-
250
350
400
mW
mW
mW
TR2; NPN resistor-equipped transistor
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
open emitter
open base
-
-
-
50
50
10
V
V
V
open collector
positive
-
-
-
-
-
-
-
+40
−10
100
100
200
200
200
V
negative
V
IO
output current (DC)
peak collector current
total power dissipation
mA
mA
mW
mW
mW
ICM
Ptot
[1]
[2]
[3]
Tamb ≤ 25 °C
Per device
[1]
[2]
[3]
Ptot
total power dissipation
Tamb ≤ 25 °C
-
400
mW
mW
mW
°C
-
530
-
600
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
3 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa461
0.8
P
tot
(W)
(1)
(2)
0.6
(3)
0.4
0.2
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Parameter
Symbol
Per device
Rth(j-a)
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
thermal resistance from in free air
junction to ambient
-
-
-
-
-
-
312
236
208
K/W
K/W
K/W
TR1; PNP low VCEsat transistor
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
105
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
4 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa462
3
10
δ = 1
Z
th(j-a)
0.75
0.5
0.33
0.2
(K/W)
2
10
0.1
0.05
0.02
0.01
10
0
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
006aaa463
3
10
Z
th(j-a)
δ = 1
0.75
(K/W)
0.5
0.33
0.2
2
10
0.1
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1cm2
Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
5 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa464
3
10
Z
th(j-a)
δ = 1
0.75
(K/W)
0.5
0.33
0.2
2
10
0.1
0.05
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time;
typical values
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
TR1; PNP low VCEsat transistor
ICBO
collector-base cut-off
current
VCB = −60 V; IE = 0 A
-
-
-
-
−100 nA
VCB = −60 V; IE = 0 A;
Tj = 150 °C
−50
µA
ICES
collector-emitter cut-off
current
VCE = −60 V; VBE = 0 V
-
-
−100 nA
IEBO
hFE
emitter-base cut-off current VEB = −5 V; IC = 0 A
-
-
−100 nA
DC current gain
VCE = −5 V; IC = −1 mA
200
150
350
230
-
-
[1]
[1]
VCE = −5 V;
IC = −500 mA
VCE = −5 V;
100
160
-
IC = −1000 mA
VCEsat
collector-emitter saturation IC = −100 mA;
-
-
-
-
-
−110 −175 mV
−135 −180 mV
−255 −340 mV
voltage
IB = −1 mA
[1]
[1]
[1]
[1]
IC = −500 mA;
IB = −50 mA
IC = −1000 mA;
IB = −100 mA
RCEsat
VBEsat
collector-emitter saturation IC = −1 A;
255
340
mΩ
resistance
IB = −100 mA
base-emitter saturation
voltage
IC = −1 A; IB = −50 mA
−0.95 −1.1
V
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
6 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
Table 7.
Characteristics …continued
Tamb = 25 °C unless otherwise specified
Symbol Parameter
Conditions
Min
Typ
Max Unit
[1]
VBEon
base-emitter turn-on
voltage
VCE = −5 V; IC = −1 A
-
−0.82 −0.9
V
td
tr
delay time
IC = −0.5 A;
-
11
-
-
-
-
-
-
-
ns
IBon = −25 mA;
rise time
-
30
ns
IBoff = 25 mA
ton
ts
turn-on time
storage time
fall time
-
41
ns
-
205
55
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
260
185
ns
IC = −50 mA;
CE = −10 V;
150
MHz
V
f = 100 MHz
Cc
collector capacitance
VCB = −10 V;
IE = ie = 0 A; f = 1 MHz
-
-
9
-
15
pF
nA
TR2; NPN resistor-equipped transistor
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A
100
ICEO
collector-emitter cut-off
current
VCE = 30 V; IB = 0 A
-
-
-
-
1
µA
µA
VCE = 30 V; IB = 0 A;
50
Tj = 150 °C
IEBO
hFE
emitter-base cut-off current VEB = 5 V; IC = 0 A
DC current gain VCE = 5 V; IC = 5 mA
collector-emitter saturation IC = 10 mA;
-
-
-
-
400
-
µA
30
-
VCEsat
150
mV
voltage
IB = 0.5 mA
VI(off)
VI(on)
off-state input voltage
on-state input voltage
VCE = 5 V; IC = 100 µA
-
1.1
1.8
0.8
-
V
V
VCE = 0.3 V;
IC = 10 mA
2.5
R1
bias resistor 1 (input)
bias resistor ratio
7
10
1
13
kΩ
R2/R1
Cc
0.8
-
1.2
2.5
collector capacitance
VCB = 10 V;
-
pF
IE = ie = 0 A; f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
7 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa474
006aaa475
600
−1
(1)
h
FE
V
CEsat
(V)
400
(2)
(3)
−1
−10
(1)
(2)
(3)
200
−2
0
−10
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. TR1 (PNP): DC current gain as a function of
collector current; typical values
Fig 6. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa476
006aaa477
−1.0
−1.1
V
BEsat
(V)
V
(V)
BE
−0.9
−0.7
−0.5
−0.3
−0.1
−0.8
(1)
(2)
(1)
(2)
(3)
−0.6
−0.4
−0.2
(3)
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −5 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 7. TR1 (PNP): Base-emitter voltage as a function
of collector current; typical values
Fig 8. TR1 (PNP): Base-emitter saturation voltage as
a function of collector current; typical values
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
8 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa478
006aaa479
3
−2.0
10
I
(mA) = −35.0
−31.5
B
I
C
R
CEsat
(A)
−28.0
(Ω)
−24.5
−21.0
−1.6
−17.5
−14.0
2
10
−10.5
−7.0
−1.2
−0.8
−0.4
0.0
10
(1)
(2)
(3)
−3.5
1
−1
10
−1
2
3
4
0
−1
−2
−3
−4
−5
(V)
−10
−1
−10
−10
−10
−10
I (mA)
C
V
CE
Tamb = 25 °C
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. TR1 (PNP): Collector current as a function of
collector-emitter voltage; typical values
Fig 10. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
006aaa480
006aaa481
3
−1
10
R
CEsat
(Ω)
V
CEsat
(V)
2
10
(1)
(2)
(3)
−1
−10
10
(1)
(2)
1
(3)
−2
−1
−10
10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. TR1 (PNP): Collector-emitter saturation
voltage as a function of collector current;
typical values
Fig 12. TR1 (PNP): Collector-emitter saturation
resistance as a function of collector current;
typical values
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
9 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
006aaa034
006aaa035
3
10
1
(1)
(2)
(3)
h
FE
V
CEsat
(V)
2
10
(1)
(2)
(3)
−1
10
10
−2
1
10
10
−1
2
2
1
10
10
1
10
10
I
(mA)
I (mA)
C
C
VCE = 5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 13. TR2 (NPN): DC current gain as a function of
collector current; typical values
Fig 14. TR2 (NPN): Collector-emitter saturation
voltage as a function of collector current;
typical values
006aaa036
006aaa037
10
10
V
I(on)
V
I(off)
(V)
(V)
(1)
(2)
(1)
(2)
(3)
1
1
(3)
−1
−1
10
10
−1
2
−2
−1
10
1
10
10
10
10
1
10
I
(mA)
I (mA)
C
C
VCE = 0.3 V
VCE = 5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 15. TR2 (NPN): On-state input voltage as a
function of collector current; typical values
Fig 16. TR2 (NPN): Off-state input voltage as a
function of collector current; typical values
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
10 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 17. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 18. Test circuit for switching times
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
11 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 19. Package outline SOT457 (SC-74)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PBLS6003D
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 14.
[2] T1: normal taping
[3] T2: reverse taping
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
12 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
11. Soldering
3.45
1.95
solder lands
solder resist
occupied area
solder paste
0.95
0.45 0.55
2.825
3.30
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 20. Reflow soldering footprint
5.30
solder lands
solder resist
occupied area
5.05
0.45 1.45 4.45
msc423
1.40
4.30
Dimensions in mm
Fig 21. Wave soldering footprint
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
13 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
12. Revision history
Table 9.
Revision history
Document ID
PBLS6003D_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090907
Product data sheet
-
PBLS6003D_1
• This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
• Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current;
typical values”: VCEsat unit amended from mV to V
• Figure 21 “Wave soldering footprint”: updated
PBLS6003D_1
20050628
Product data sheet
-
-
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
14 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBLS6003D_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 7 September 2009
15 of 16
PBLS6003D
NXP Semiconductors
60 V PNP BISS loadswitch
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . 11
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
Packing information. . . . . . . . . . . . . . . . . . . . . 12
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 15
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 7 September 2009
Document identifier: PBLS6003D_2
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