PBSS2515E,115 [NXP]
PBSS2515E - 15 V, 0.5 A NPN low VCEsat (BISS) transistor SC-75 3-Pin;型号: | PBSS2515E,115 |
厂家: | NXP |
描述: | PBSS2515E - 15 V, 0.5 A NPN low VCEsat (BISS) transistor SC-75 3-Pin |
文件: | 总12页 (文件大小:122K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PBSS2515E
15 V, 0.5 A NPN low VCEsat (BISS) transistor
Rev. 02 — 21 April 2009
Product data sheet
1. Product profile
1.1 General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in an ultra small
SOT416 (SC-75) Surface-Mounted Device (SMD) plastic package.
PNP complement: PBSS3515E.
1.2 Features
I Low collector-emitter saturation voltage VCEsat
I High collector current capability IC and ICM
I High collector current gain (hFE) at high IC
I High efficiency due to less heat generation
I Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
I DC-to-DC conversion
I MOSFET gate driving
I Motor control
I Charging circuits
I Low power switches (e.g. motors, fans)
I Portable applications
1.4 Quick reference data
Table 1.
Symbol Parameter
VCEO collector-emitter voltage
IC
Quick reference data
Conditions
Min
Typ
Max
15
Unit
V
open base
-
-
-
-
-
-
collector current
0.5
1
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
[1]
RCEsat
collector-emitter
saturation resistance
IC = 500 mA;
IB = 50 mA
-
300
500
mΩ
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PBSS2515E
SC-75
plastic surface-mounted package; 3 leads
SOT416
4. Marking
Table 4.
Marking codes
Type number
Marking code
PBSS2515E
1Q
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
15
15
6
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
-
-
-
-
-
V
open collector
V
0.5
1
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
IBM
Ptot
peak base current
single pulse;
tp ≤ 1 ms
-
100
mA
[1]
[2]
total power dissipation
T
amb ≤ 25 °C
-
150
mW
mW
°C
-
250
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
2 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
006aaa412
300
tot
P
(mW)
(1)
(2)
200
100
0
0
40
80
120
160
(°C)
T
amb
(1) FR4 PCB, mounting pad for collector 1 cm2
(2) FR4 PCB, standard footprint
Fig 1. Power derating curves
6. Thermal characteristics
Table 6.
Thermal characteristics
Symbol Parameter
Conditions
Min
Typ
Max
833
500
170
Unit
K/W
K/W
K/W
[1]
[2]
Rth(j-a)
thermal resistance from
in free air
-
-
-
-
-
-
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
3 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
006aab472
3
10
duty cycle =
1
Z
0.75
th(j-a)
(K/W)
0.5
0.33
2
0.2
10
0.1
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aaa413
3
10
duty cycle =
1
Z
th(j-a)
0.75
(K/W)
0.5
0.33
2
10
0.2
0.1
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
4 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max Unit
ICBO
collector-base cut-off
current
VCB = 15 V; IE = 0 A
-
-
-
-
100
50
nA
VCB = 15 V; IE = 0 A;
µA
Tj = 150 °C
IEBO
hFE
emitter-base cut-off
current
VEB = 5 V; IC = 0 A
-
-
100
nA
DC current gain
VCE = 2 V; IC = 10 mA
VCE = 2 V; IC = 100 mA
VCE = 2 V; IC = 500 mA
IC = 10 mA; IB = 0.5 mA
IC = 200 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 500 mA; IB = 50 mA
200
-
-
[1]
[1]
150
-
-
90
-
-
-
VCEsat
collector-emitter
saturation voltage
-
25
150
250
500
mV
mV
mV
mΩ
-
-
[1]
[1]
-
-
RCEsat
VBEsat
VBEon
collector-emitter
saturation resistance
-
300
[1]
[1]
base-emitter saturation IC = 500 mA; IB = 50 mA
voltage
-
-
-
-
1.1
0.9
V
V
base-emitter turn-on
voltage
VCE = 2 V; IC = 100 mA
td
tr
delay time
VCC = 11 V;
IC = 250 mA;
-
10
-
-
-
-
-
-
-
ns
rise time
-
15
ns
IBon = 12.5 mA;
ton
ts
turn-on time
storage time
fall time
-
25
ns
IBoff = −12.5 mA
-
215
34
ns
tf
-
ns
toff
fT
turn-off time
transition frequency
-
249
420
ns
VCE = 5 V; IC = 100 mA;
f = 100 MHz
250
MHz
Cc
collector capacitance
VCB = 10 V; IE = ie = 0 A;
f = 1 MHz
-
4.4
6
pF
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
5 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
006aaa364
006aaa370
800
1.2
I
= 5.0 mA
B
h
FE
4.5
4.0
3.5
I
C
(A)
(1)
(2)
600
3.0
2.5
0.8
2.0
1.5
400
200
0
(3)
0.4
1.0
0.5
0
−1
2
3
10
1
10
10
10
0
1
2
3
4
5
I
(mA)
V
(V)
CE
C
VCE = 2 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 4. DC current gain as a function of collector
current; typical values
Fig 5. Collector current as a function of
collector-emitter voltage; typical values
006aaa365
006aaa368
1100
1.3
V
BE
(mV)
V
BEsat
(V)
900
(1)
(2)
0.9
0.5
0.1
(1)
(2)
700
500
300
100
(3)
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
VCE = 2 V
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 6. Base-emitter voltage as a function of collector
current; typical values
Fig 7. Base-emitter saturation voltage as a function
of collector current; typical values
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
6 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
006aaa366
006aaa367
1
1
V
V
CEsat
CEsat
(V)
(V)
−1
−2
−3
−1
−2
−3
10
10
(1)
(2)
(1)
(2)
(3)
10
10
10
10
(3)
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
(mA)
I (mA)
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 9. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa369
006aaa371
2
3
10
10
R
CEsat
(Ω)
R
CEsat
(Ω)
2
10
10
(1)
10
(2)
(3)
(1)
(2)
(3)
1
1
−1
−1
10
10
−1
2
I
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
(mA)
I (mA)
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 11. Collector-emitter saturation resistance as a
function of collector current; typical values
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
7 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
8. Test information
I
B
input pulse
90 %
(idealized waveform)
I
(100 %)
Bon
10 %
I
Boff
output pulse
(idealized waveform)
I
C
90 %
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
t
t
off
on
006aaa003
Fig 12. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
VCC = 11 V; IC = 250 mA; IBon = 12.5 mA; IBoff = −12.5 mA
Fig 13. Test circuit for switching times
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
8 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
9. Package outline
1.8
1.4
0.95
0.60
3
0.45
0.15
1.75 0.9
1.45 0.7
1
2
0.30
0.15
0.25
0.10
1
Dimensions in mm
04-11-04
Fig 14. Package outline SOT416 (SC-75)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package
Description
Packing quantity
3000
10000
PBSS2515E
SOT416
4 mm pitch, 8 mm tape and reel
-115
-135
[1] For further information and the availability of packing methods, see Section 14.
11. Soldering
2.2
1.7
solder lands
solder resist
1
0.85
2
solder paste
0.5
(3×)
occupied area
Dimensions in mm
0.6
(3×)
1.3
sot416_fr
Fig 15. Reflow soldering footprint SOT416 (SC-75)
Rev. 02 — 21 April 2009
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
9 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PBSS2515E_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20090421
Product data sheet
-
PBSS2515E_1
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Figure 2: added
• Table 6 “Thermal characteristics”: enhanced
• Table 7 “Characteristics”: switching times added
• Figure 8 and 9: amended
• Section 13 “Legal information”: updated
PBSS2515E_1
20050418
Product data sheet
-
-
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
10 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PBSS2515E_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 21 April 2009
11 of 12
PBSS2515E
NXP Semiconductors
15 V, 0.5 A NPN low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 3
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Packing information. . . . . . . . . . . . . . . . . . . . . . 9
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 11
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 21 April 2009
Document identifier: PBSS2515E_2
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