PBSS302PD [NXP]
40 V PNP low VCEsat (BISS) transistor; 40 V PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS302PD |
| 厂家： | 
NXP |
| 描述： | 40 V PNP low VCEsat (BISS) transistor |
| 文件： | 总14页 (文件大小：120K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS302PD
40 V PNP low VCEsat (BISS) transistor
Rev. 01 — 18 April 2005
Product data sheet
1. Product profile
1.1 General description
PNP low VCEsat Breakthrough in Small Signal (BISS) single bipolar PNP transistor in a
SOT457 (SC-74) SMD plastic package.
NPN complement: PBSS302ND
1.2 Features
■ Ultra low collector-emitter saturation voltage VCEsat
■ 4 A continuous collector current capability IC (DC)
■ Up to 15 A peak current
■ Very low collector-emitter saturation resistance
■ High efficiency due to less heat generation
1.3 Applications
■ Power management functions
■ Charging circuits
■ DC-to-DC conversion
■ MOSFET gate driving
■ Power switches (e.g. motors, fans)
■ Thin Film Transistor (TFT) backlight inverter
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max Unit
collector-emitter voltage
collector current (DC)
peak collector current
open base
-
-
-
-
-
-
−40
−4
V
A
A
[1]
[2]
ICM
t = 1 ms or limited
by Tj(max)
−15
RCEsat
collector-emitter saturation IC = −6 A;
resistance IB = −600 mA
-
55
75
mΩ
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), AL2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
collector
collector
base
Simplified outline
Symbol
1, 2, 5, 6
6
5
4
2
3
3
4
emitter
1
2
3
4
5
collector
collector
sym030
6
3. Ordering information
Table 3:
Ordering information
Type number
Package
Name
Description
Version
PBSS302PD
SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
PBSS302PD
Marking code
C9
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
−40
−40
−5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
-
-
-
-
-
V
open collector
V
[1]
−4
A
ICM
t = 1 ms or limited
by Tj(max)
−15
A
IB
base current (DC)
peak base current
total power dissipation
-
-
-
-
-
-
-
−0.8
−2
A
IBM
Ptot
tp ≤ 300 µs
A
[2]
[3]
T
amb ≤ 25 °C
360
600
750
1.1
mW
mW
mW
W
[4]
[1]
[2] [5]
2.5
W
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
2 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Tstg
Parameter
Conditions
Min
−65
-
Max
+150
150
Unit
°C
storage temperature
junction temperature
ambient temperature
Tj
°C
Tamb
−65
+150
°C
[1] Device mounted on a ceramic PCB, AL2O3, standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa270
1600
P
tot
(mW)
1200
(1)
(2)
(3)
800
400
0
(4)
−75
−25
25
75
125
175
(°C)
T
amb
(1) Ceramic PCB, AL2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig 1. Power derating curves
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
3 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
[2]
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
-
-
-
-
350
208
160
113
50
K/W
K/W
K/W
K/W
K/W
K/W
[3]
[4]
[1] [5]
Rth(j-sp)
thermal resistance from
junction to solder point
45
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, AL2O3, standard footprint.
[5] Operated under pulsed conditions: Duty cycle δ ≤ 10 % and pulse width tp ≤ 10 ms.
006aaa271
3
10
Z
th(j-a)
(1)
(2)
(3)
(4)
(K/W)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
4 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
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3
10
Z
th(j-a)
(K/W)
(1)
(2)
(3)
(4)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
5 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
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3
10
Z
th(j-a)
(K/W)
(1)
(2)
(3)
2
10
(4)
(5)
(6)
(7)
(8)
10
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 6 cm2
(1) δ = 1
(2) δ = 0.75
(3) δ = 0.5
(4) δ = 0.33
(5) δ = 0.2
(6) δ = 0.1
(7) δ = 0.05
(8) δ = 0.02
(9) δ = 0.01
(10) δ = 0
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
6 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
−0.1
−50
Unit
µA
ICBO
collector-base cut-off VCB = −30 V; IE = 0 A
current
-
-
-
-
-
-
VCB = −30 V; IE = 0 A; Tj = 150 °C
VCE = −30 V; VBE = 0 V
µA
ICES
IEBO
hFE
collector-emitter
cut-off current
−0.1
µA
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−0.1
µA
DC current gain
VCE = −2 V; IC = −0.5 A
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −2 A
VCE = −2 V; IC = −4 A
VCE = −2 V; IC = −6 A
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −2 A; IB = −200 mA
IC = −4 A; IB = −400 mA
IC = −6 A; IB = −600 mA
IC = −6 A; IB = −600 mA
200
-
-
[1]
[1]
[1]
[1]
200
-
-
175
-
-
80
30
-
-
-
-
-
VCEsat
collector-emitter
saturation voltage
−46
−70
−120
−220
−320
55
−60
−110
−180
−300
−450
75
mV
mV
mV
mV
mV
mΩ
-
-
[1]
[1]
[1]
-
-
RCEsat
VBEsat
collector-emitter
saturation resistance
-
base-emitter
saturation voltage
IC = −0.5 A; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −4 A; IB = −400 mA
VCE = −2 V; IC = −2 A
-
-
-
-
-
−0.8
−0.85
−0.9
−1
V
V
V
V
V
−0.84
−0.84
−1.0
[1]
[1]
−1.1
−1.0
VBEon
base-emitter turn-on
voltage
−0.8
td
tr
delay time
VCC = −10 V; IC = −2 A;
-
-
-
-
-
-
-
12
-
-
-
-
-
-
-
ns
IBon = −0.1 A; IBoff = 0.1 A
rise time
43
ns
ton
ts
turn-on time
storage time
fall time
55
ns
241
80
ns
tf
ns
toff
fT
turn-off time
transition frequency
321
110
ns
VCE = −10 V; IC = −0.1 A;
MHz
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
-
50
-
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
7 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa282
006aaa283
600
−1.6
V
BE
(1)
h
FE
(V)
−1.2
−0.8
−0.4
0
400
(2)
(3)
200
0
−10
−1
2
3
4
5
−1
2
3
4
5
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
VCE = −2 V
VCE = −2 V
(1) Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa284
006aaa285
−1
−1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
(3)
−1
−1
−10
−10
−10
−10
−10
−10
(1)
(2)
−2
−2
(3)
−3
−3
−1
2
3
4
−1
2
3
4
5
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
−10
(mA)
I
I
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
8 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa287
006aaa327
3
−1.3
10
R
CEsat
(Ω)
V
BEsat
(V)
2
10
(1)
−0.9
−0.5
−0.1
(2)
(3)
(1)
(2)
(3)
10
1
−1
10
−2
10
−1
2
3
4
5
−1
2
3
4
−10
−1
−10
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(A)
I
I
C
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
9 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
006aaa288
006aaa289
2
−12
10
R
CEsat
I
C
(Ω)
(1)
(3)
(A)
(2)
(4)
10
(5)
(6)
(7)
−8
(8)
1
(9)
(1)
(2)
(3)
(10)
−4
−1
10
−2
0
10
−1
2
3
4
0
−0.4
−0.8
−1.2
−1.6
−2.0
(V)
−10
−1
−10
−10
−10
−10
I (mA)
C
V
CE
Tamb = 25 °C
(1) IB = −400 mA
(2) IB = −360 mA
(3) IB = −320 mA
(4) IB = −280 mA
(5) IB = −240 mA
(6) IB = −200 mA
(7) IB = −160 mA
(8) IB = −120 mA
(9) IB = −80 mA
(10) IB = −40 mA
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
10 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
(1) VCC = −10 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A
Fig 14. Test circuit for switching times
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
11 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 15. Package outline SOT457 (SC-74)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
-115
-125
5000
10000
-135
[2]
[3]
PBSS302PD
SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-
-
-165
[1] For further information and the availability of packing methods, see Section 15.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
12 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
11. Revision history
Table 9:
Revision history
Document ID
Release date Data sheet status
20050418 Product data sheet
Change notice Doc. number
9397 750 14513
Supersedes
PBSS302PD_1
-
-
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
13 of 15
PBSS302PD
Philips Semiconductors
40 V PNP low VCEsat (BISS) transistor
12. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
13. Definitions
14. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
15. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14513
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 18 April 2005
14 of 15
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