PBSS5160DS [NXP]
60 V, 1 A PNP low VCEsat (BISS) transistor; 60 V ，1 A PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS5160DS |
| 厂家： | 
NXP |
| 描述： | 60 V, 1 A PNP low VCEsat (BISS) transistor |
| 文件： | 总14页 (文件大小：141K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PBSS5160DS
60 V, 1 A PNP low VCEsat (BISS) transistor
Rev. 02 — 28 June 2005
Product data sheet
1. Product profile
1.1 General description
PNP/PNP low VCEsat Breakthrough in Small Signal (BISS) transistor pair in a SOT457
(SC-74) Surface Mounted Device (SMD) plastic package.
NPN complement: PBSS4160DS.
1.2 Features
■ Low collector-emitter saturation voltage VCEsat
■ High collector current capability: IC and ICM
■ High collector current gain (hFE) at high IC
■ High efficiency due to less heat generation
■ Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
■ Dual low power switches (e.g. motors, fans)
■ Automotive applications
1.4 Quick reference data
Table 1:
Symbol
VCEO
IC
Quick reference data
Parameter
Conditions
Min
Typ
Max
−60
−1
Unit
V
collector-emitter voltage
collector current (DC)
peak collector current
open base
-
-
-
-
-
-
[1]
[2]
A
ICM
single pulse;
tp ≤ 1 ms
−2
A
RCEsat
collector-emitter saturation IC = −1 A;
resistance IB = −100 mA
-
250
330
mΩ
[1] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[2] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2:
Pinning
Pin
1
Description
emitter TR1
base TR1
Simplified outline
Symbol
6
5
4
6
5
2
4
2
3
collector TR2
emitter TR2
base TR2
TR2
TR1
1
4
1
2
3
5
3
6
collector TR1
sym018
3. Ordering information
Table 3:
Ordering information
Type number Package
Name
Description
Version
PBSS5160DS SC-74
plastic surface mounted package; 6 leads
SOT457
4. Marking
Table 4:
Marking codes
Type number
Marking code
PBSS5160DS
A5
5. Limiting values
Table 5:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VCBO
VCEO
collector-base voltage open emitter
-
-
−80
−60
V
V
collector-emitter
voltage
open base
VEBO
IC
emitter-base voltage
collector current (DC)
open collector
-
-
-
-
-
-
-
−5
V
[1]
[2]
[3]
−0.77
−0.9
−1
A
A
A
ICM
IB
peak collector current single pulse; tp ≤ 1 ms
−2
A
base current (DC)
−300
−1
mA
A
IBM
peak base current
single pulse; tp ≤ 1 ms
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
2 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
Table 5:
Limiting values …continued
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
290
370
450
Unit
mW
mW
mW
[1]
[2]
[3]
Ptot
total power dissipation Tamb ≤ 25 °C
-
-
-
Per device
[1]
[2]
[3]
Ptot
total power dissipation Tamb ≤ 25 °C
-
420
mW
mW
mW
°C
-
560
-
700
Tj
junction temperature
ambient temperature
storage temperature
-
150
Tamb
Tstg
−65
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa493
0.8
(1)
P
tot
(W)
0.6
(2)
(3)
0.4
0.2
0
0
40
80
120
160
(°C)
T
amb
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 1 cm2
(3) FR4 PCB, standard footprint
Fig 1. Power derating curves
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
3 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6:
Thermal characteristics
Symbol Parameter
Per transistor
Conditions
Min
Typ
Max
Unit
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
-
-
431
338
278
105
K/W
K/W
K/W
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
Per device
[1]
[2]
[3]
Rth(j-a)
thermal resistance from
junction to ambient
in free air
-
-
-
-
-
-
298
223
179
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aaa494
3
10
δ = 1
Z
th(j-a)
0.75
0.33
(K/W)
0.50
2
10
0.20
0.10
0.05
0.02
0.01
10
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
4 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
006aaa495
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
0.20
0.10
0.05
2
10
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for collector 1 cm2
Fig 3. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
006aaa496
3
10
Z
th(j-a)
δ = 1
(K/W)
0.75
0.33
0.50
0.20
0.10
0.05
2
10
10
0.02
0.01
0
1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
Ceramic PCB, Al2O3, standard footprint
Fig 4. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
5 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per transistor
Conditions
Min Typ
Max
Unit
ICBO
collector-base cut-off
current
VCB = −60 V; IE = 0 A
-
-
-
-
−100 nA
−50 µA
VCB = −60 V; IE = 0 A;
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter cut-off VCE = −60 V; VBE = 0 V
current
-
-
-
-
−100 nA
−100 nA
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
DC current gain
VCE = −5 V; IC = −1 mA
VCE = −5 V; IC = −500 mA
VCE = −5 V; IC = −1 A
200 350
150 250
100 160
-
-
-
[1]
[1]
VCEsat
collector-emitter
saturation voltage
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −100 mA
-
-
-
-
−110 −165 mV
−120 −175 mV
−250 −330 mV
[1]
[1]
VBEsat
RCEsat
VBEon
base-emitter saturation IC = −1 A; IB = −50 mA
voltage
−0.95 −1.1
250 330
−0.82 −0.9
V
[1]
[1]
collector-emitter
saturation resistance
IC = −1 A; IB = −100 mA
IC = −1 A; VCE = −5 V
-
-
mΩ
V
base-emitter turn-on
voltage
td
tr
delay time
IC = −0.5 A;IBon = −25 mA;
-
-
-
-
-
-
11
-
-
-
-
-
-
-
ns
IBoff = 25 mA
rise time
30
ns
ton
ts
turn-on time
storage time
fall time
41
ns
205
55
ns
tf
ns
toff
fT
turn-off time
transition frequency
260
ns
VCE = −10 V; IC = −50 mA;
150 185
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = ie = 0 A;
-
9
15
pF
f = 1 MHz
[1] Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
6 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
006aaa474
006aaa476
600
−1.0
(1)
V
BE
h
FE
(V)
−0.8
−0.6
−0.4
−0.2
(1)
(2)
400
(2)
(3)
200
(3)
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −5 V
VCE = −5 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. DC current gain as a function of collector
current; typical values
Fig 6. Base-emitter voltage as a function of collector
current; typical values
006aaa489
006aaa490
−1
−1
V
(mV)
V
CEsat
CEsat
(V)
−1
−1
−10
−10
(1)
(2)
(1)
(2)
(3)
(3)
−2
−2
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
7 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
006aaa477
006aaa491
3
−1.1
10
V
BEsat
(V)
R
CEsat
(Ω)
−0.9
−0.7
−0.5
−0.3
−0.1
2
10
(1)
(2)
(3)
10
(1)
(2)
(3)
1
−1
10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 20
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 9. Base-emitter saturation voltage as a function of
collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
006aaa478
006aaa492
3
−2.0
10
I
(mA) = −35.0
−31.5
B
I
C
R
CEsat
(A)
−28.0
(Ω)
−24.5
−21.0
−1.6
−17.5
−14.0
2
10
−10.5
−7.0
−1.2
−0.8
−0.4
0.0
10
(1)
−3.5
(2)
(3)
1
−1
10
−1
2
3
4
0
−1
−2
−3
−4
−5
(V)
−10
−1
−10
−10
−10
−10
I (mA)
C
V
CE
Tamb = 25 °C
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 11. Collector current as a function of
collector-emitter voltage; typical values
Fig 12. Collector-emitter saturation resistance as a
function of collector current; typical values
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
8 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
8. Test information
−
I
B
input pulse
90 %
(idealized waveform)
−
I
(100 %)
Bon
10 %
−
I
Boff
output pulse
−
(idealized waveform)
I
C
90 %
−
I
(100 %)
C
10 %
t
t
t
f
t
t
r
s
d
006aaa266
t
t
off
on
Fig 13. BISS transistor switching time definition
V
V
CC
BB
R
B
R
C
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mgd624
IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω
Fig 14. Test circuit for switching times
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
9 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
9. Package outline
3.1
2.7
1.1
0.9
6
5
4
0.6
0.2
3.0 1.7
2.5 1.3
pin 1 index
1
2
3
0.26
0.10
0.40
0.25
0.95
1.9
Dimensions in mm
04-11-08
Fig 15. Package outline SOT457 (SC-74)
10. Packing information
Table 8:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number Package
Description
Packing quantity
3000
-115
-125
10000
-135
[2]
[3]
PBSS5160DS SOT457
4 mm pitch, 8 mm tape and reel; T1
4 mm pitch, 8 mm tape and reel; T2
-165
[1] For further information and the availability of packing methods, see Section 17.
[2] T1: normal taping
[3] T2: reverse taping
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
10 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
11. Soldering
3.45
1.95
solder lands
0.95
solder resist
0.45 0.55
2.825
3.30
occupied area
solder paste
1.60
1.70
3.10
3.20
msc422
Dimensions in mm
Fig 16. Reflow soldering footprint
5.30
solder lands
solder resist
5.05
0.45 1.45 4.45
occupied area
solder paste
MSC423
1.40
4.30
Dimensions in mm
Fig 17. Wave soldering footprint
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
11 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
12. Revision history
Table 9:
Revision history
Document ID
PBSS5160DS_2
Modifications:
Release date Data sheet status
20050628 Product data sheet
• Product status changed
Change notice
Doc. number
Supersedes
-
9397 750 15186 PBSS5160DS_1
• Table 7: Switching time parameters td, tr, ton, ts, tf and toff added
• Figure 13 “BISS transistor switching time definition”: added
• Figure 14 “Test circuit for switching times”: added
• Section 10 “Packing information”: added
• Section 11 “Soldering”: added
• Section 16 “Trademarks”: added
PBSS5160DS_1
20040716
Objective data sheet
-
9397 750 12704
-
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
12 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
13. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
14. Definitions
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
16. Trademarks
Notice — All referenced brands, product names, service names and
15. Disclaimers
trademarks are the property of their respective owners.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
17. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 15186
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 02 — 28 June 2005
13 of 14
PBSS5160DS
Philips Semiconductors
60 V, 1 A PNP low VCEsat (BISS) transistor
18. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 9
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Packing information. . . . . . . . . . . . . . . . . . . . . 10
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Contact information . . . . . . . . . . . . . . . . . . . . 13
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 28 June 2005
Document number: 9397 750 15186
Published in The Netherlands
相关型号：
©2020 ICPDF网 联系我们和版权申明