PBSS9110T [NXP]
100 V, 1 A PNP low VCEsat (BISS) transistor; 100 V ，1 A PNP低VCEsat晶体管（ BISS ）晶体管
| 型号： | PBSS9110T |
| 厂家： | 
NXP |
| 描述： | 100 V, 1 A PNP low VCEsat (BISS) transistor |
| 文件： | 总12页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PBSS9110T
100 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
2004 May 13
Supersedes data of 2004 May 06
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
FEATURES
QUICK REFERENCE DATA
• SOT23 package
SYMBOL
PARAMETER
MAX. UNIT
• Low collector-emitter saturation voltage VCEsat
• High collector current capability: IC and ICM
• Higher efficiency leading to less heat generation
VCEO
IC
collector-emitter voltage
collector current (DC)
−100
−1
V
A
A
ICM
repetitive peak collector
current
−3
RCEsat
equivalent on-resistance
320
mΩ
APPLICATIONS
• Major application segments
– Automotive 42 V power
– Telecom infrastructure
– Industrial
PINNING
PIN
DESCRIPTION
1
2
3
base
• DC-to-DC conversion
• Peripheral drivers
emitter
collector
– Driver in low supply voltage applications (e.g. lamps
and LEDs).
– Inductive load driver (e.g. relays,
buzzers and motors).
handbook, halfpage
3
3
2
DESCRIPTION
1
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS8110T.
1
2
Top view
MAM256
MARKING
TYPE NUMBER
PBSS9110T
MARKING CODE(1)
Fig.1 Simplified outline (SOT23) and symbol.
*U7
Note
1.
= p: Made in Hong Kong.
= t: Made in Malaysia.
= W: Made in China.
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
DESCRIPTION
plastic surface mounted package; 3 leads
NAME
VERSION
PBSS9110T
−
SOT23
2004 May 13
2
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
−120
UNIT
VCBO
VCEO
VEBO
IC
−
−
−
−
−
−
−
−
−
V
V
V
A
A
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
open base
−100
−5
open collector
−1
ICM
limited by Tj(max)
−3
IB
−300
300
480
150
+150
+150
mA
mW
mW
°C
Ptot
total power dissipation
T
amb ≤ 25 °C; note 1
amb ≤ 25 °C; note 2
T
Tj
junction temperature
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
°C
°C
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
001aaa811
600
P
tot
(mW)
(1)
(2)
400
200
0
0
40
80
120
160
(°C)
T
amb
(1) 1 cm2 collector mounting pad.
(2) Standard footprint.
Fig.2 Power derating curves.
2004 May 13
3
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
in free air; note 1
in free air; note 2
VALUE
UNIT
Rth(j-a)
thermal resistance from junction to
ambient
417
260
K/W
K/W
Notes
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
001aaa814
3
10
Z
th
(1)
(K/W)
(2)
(3)
(4)
2
10
(5)
(6)
(7)
10
(8)
(9)
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on printed-circuit board; 1 cm2 collector mounting pad.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
4
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa813
3
10
(1)
Z
th
(2)
(3)
(4)
(5)
(6)
(K/W)
2
10
(7)
(8)
(9)
10
(10)
1
−1
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
10
1
10
10
10
t
(s)
p
Mounted on printed-circuit board; standard footprint.
(1) δ = 1.
(3) δ = 0.5.
(5) δ = 0.2.
(6) δ = 0.1.
(7) δ = 0.05.
(8) δ = 0.02.
(9) δ = 0.01.
(10) δ = 0.
(2) δ = 0.75.
(4) δ = 0.33.
Fig.4 Transient thermal impedance as a function of pulse time; typical values.
2004 May 13
5
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
ICBO
collector-base cut-off current
VCB = −80 V; IE = 0 A
−
−
−100 nA
−50 µA
VCB = −80 V; IE = 0 A; Tj = 150 °C
VCE = −80 V; VBE = 0 A
−
−
ICES
IEBO
hFE
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
−
−
−100 nA
VEB = −4 V; IC = 0 A
−
−
−100 nA
VCE = −5 V; IC = −1 mA
150
150
150
125
−
−
−
VCE = −5 V; IC = −250 mA
VCE = −5 V; IC = −500 mA; note 1
VCE = −5 V; IC = −1 A; note 1
−
−
−
450
−
−
VCEsat
collector-emitter saturation voltage IC = −250 mA; IB = −25 mA
IC = −500 mA; IB = −50 mA
−
−120 mV
−180 mV
−320 mV
−
−
IC = −1 A; IB = −100 mA; note 1
−
−
RCEsat
VBEsat
VBEon
fT
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
IC = −1 A; IB = −100 mA; note 1
IC = −1 A; IB = −100 mA
VCE = −5 V; IC = −1 A
−
170
−
320
−1.1
−1
mΩ
V
−
−
−
V
VCE = −10 V; IC = −50 mA;
100
−
−
MHz
f = 100 MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A;
−
−
17
pF
f = 1 MHz
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 May 13
6
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa376
001aaa377
600
−1.2
(1)
h
FE
V
BE
(V)
(1)
(2)
(3)
400
−0.8
−0.4
0
(2)
(3)
200
0
−10
−1
2
3
4
−1
2
3
4
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
VCE = −10 V.
VCE = −10 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −55 °C.
(3) Tamb = 100 °C.
Fig.5 DC current gain as a function of collector
current; typical values.
Fig.6 Base-emitter voltage as a function of
collector current; typical values.
001aaa378
001aaa380
−1
−1
V
CEsat
(V)
V
CEsat
(V)
−1
−1
−10
−10
(1)
(2)
(1)
(2)
(3)
−2
−2
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Tamb = 25 °C.
(1) IC/IB = 50.
(2) IC/IB = 20.
Fig.7 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.8 Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 May 13
7
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa381
001aaa379
−10
−10
V
BEsat
(V)
V
BEsat
(V)
−1
−1
(1)
(2)
(3)
−1
−1
−10
−10
−1
2
3
4
−1
2
3
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
I (mA)
C
I
C
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
IC/IB = 20.
(3)
Tamb = 100 °C.
Tamb = 25 °C.
Fig.9 Base-emitter saturation voltage as a
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
function of collector current; typical values.
001aaa382
001aaa383
3
3
10
10
RCEsat
RCEsat
(Ω)
(Ω)
2
2
10
10
10
1
10
1
(1)
(2)
(3)
(1)
(2)
−1
−1
10
10
−1
2
3
I
4
−1
2
3
I
4
−10
−1
−10
−10
−10
−10
(mA)
−10
−1
−10
−10
−10
−10
(mA)
C
C
IC/IB = 10.
(1) amb = −55 °C.
T
Tamb = 25 °C.
(1) IC/IB = 50.
(2) IC/IB = 20.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
Fig.12 Equivalent on-resistance as a function of
collector current; typical values.
2004 May 13
8
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
001aaa384
−2
(1)
I
C
(2)
(4)
(3)
(5)
(A)
−1.6
(6)
(7)
(8)
(9)
−1.2
−0.8
−0.4
0
(10)
0
−1
−2
−3
−4
−5
V
(V)
CE
Tamb = 25 °C.
(1) IB = 45 mA.
(5) IB = 27 mA.
(6) IB = 22.5 mA.
(7) IB = 18 mA.
(9) IB = 9 mA.
(2) IB = 40.5 mA.
(3) IB = 36 mA.
(10) IB = 4.5 mA.
(4)
IB = 31.5 mA.
(8) IB = 13.5 mA.
Fig.13 Collector current as a function of
collector-emitter voltage; typical values.
2004 May 13
9
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEDEC
EIAJ
97-02-28
99-09-13
SOT23
TO-236AB
2004 May 13
10
Philips Semiconductors
Product specification
100 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS9110T
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 May 13
11
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2004
SCA76
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R75/03/pp12
Date of release: 2004 May 13
Document order number: 9397 750 13273
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