PBYR1640X [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
| 型号： | PBYR1640X |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes Schottky barrier |
| 文件： | 总6页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
VR = 40 V/ 45 V
IF(AV) = 16 A
VF ≤ 0.6 V
k
1
a
2
GENERAL DESCRIPTION
Schottky rectifier diodes in a plasticenvelope withelectrically isolated mounting tab. Intended for useas output rectifiers
in low voltage, high frequency switched mode power supplies.
The PBYR1645F is supplied in the SOD100 package.
The PBYR1645X is supplied in the SOD113 package.
PINNING
SOD100
SOD113
PIN
DESCRIPTION
cathode
anode
isolated
case
case
1
2
tab
1
2
1
2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR16
PBYR16
40F
45F
40X
45X
VRRM
VRWM
Peak repetitive reverse
-
-
40
45
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
40
40
45
45
VR
T
hs ≤ 97 ˚C
-
-
V
A
IF(AV)
Average rectified forward
current
square wave; δ = 0.5; Ths ≤ 95 ˚C
square wave; δ = 0.5; Ths ≤ 95 ˚C
16
32
IFRM
IFSM
Repetitive peak forward
current
-
A
Non-repetitive peak forward t = 10 ms
-
-
120
132
A
A
current
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current
-
-
1
A
Operating junction
temperature
150
175
˚C
˚C
Tstg
Storage temperature
- 65
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Visol
Cisol
Peak isolation voltage from
SOD100 package; R.H. ≤ 65%; clean and
-
-
-
-
1500
2500
-
V
both terminals to external
heatsink
dustfree
R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz;
both terminals to external
heatsink
-
V
sinusoidal waveform; R.H. ≤ 65%; clean
and dustfree
Capacitance from pin 1 to
external heatsink
f = 1 MHz
10
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Rth j-a
Thermal resistance junction with heatsink compound
-
-
-
4.2
-
K/W
K/W
to heatsink
Thermal resistance junction in free air
to ambient
55
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 16 A; Tj = 125˚C
IF = 16 A
-
-
-
-
-
0.53
0.6
V
V
mA
mA
pF
0.55 0.68
IR
Reverse current
VR = VRWM
0.2
27
470
1.7
40
-
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
Ths(max) (C)
D = 1.0
Forward dissipation, PF (W)
20
Reverse current, IR (mA)
100
10
66
Vo = 0.37 V
125 C
Rs = 0.014 Ohms
15
87
100 C
75 C
0.5
0.2
1
108
129
10
5
0.1
50 C
p
t
t
p
I
D =
T
0.1
Tj = 25 C
t
T
0.01
0
150
0
0
5
10
15
20
25
25
50
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.1. Maximum forward dissipation PF = f(IF(AV));
square current waveform where IF(AV) =IF(RMS) x √D.
Fig.4. Typical reverse leakage current; IR = f(VR);
parameter Tj
Ths(max) (C)
a = 1.57
Forward dissipation, PF (W)
Cd / pF
87
15
10
5
10000
1000
100
Vo = 0.37 V
Rs = 0.014 Ohms
1.9
2.2
2.8
4
108
129
150
0
1
10
100
0
5
10
15
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV));
sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance; Cd = f(VR);
f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-hs (K/W)
10
Forward current, IF (A)
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
typ
0.1
max
t
T
p
t
p
P
D =
D
t
T
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
1.2
1.4
pulse width, tp (s)
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance; Zth j-hs = f(tp).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
3.2
3.0
4.4
max
0.9
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
4.4
not tinned
13.5
min
k
a
0.9
0.7
0.4
M
0.55 max
1.3
5.08
top view
Fig.7. SOD100; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
Fig.8. SOD113; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
5
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1645F, PBYR1645X
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
6
Rev 1.200
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