PBYR2040CTF [NXP]
Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
| 型号： | PBYR2040CTF |
| 厂家： | 
NXP |
| 描述： | Rectifier diodes Schottky barrier |
| 文件： | 总6页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
FEATURES
SYMBOL
QUICK REFERENCE DATA
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Isolated mounting tab
VR = 40 V/ 45 V
a1
1
a2
3
IO(AV) = 20 A
k
2
VF ≤ 0.57V
GENERAL DESCRIPTION
Dual, common cathode schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended
for use as output rectifiers in low voltage, high frequency switched mode power supplies.
The PBYR2045CTF series is supplied in the SOT186 package.
The PBYR2045CTX series is supplied in the SOT186A package.
PINNING
SOT186
SOT186A
PIN
DESCRIPTION
anode 1 (a)
cathode (k)
case
case
1
2
3
anode 2 (a)
isolated
1
2 3
1
2 3
tab
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
PBYR20
PBYR20
40CTF
40CTX
40
45CTF
45CTX
45
VRRM
VRWM
Peak repetitive reverse
-
-
V
V
voltage
Working peak reverse
voltage
Continuous reverse voltage
40
40
45
45
VR
T
hs ≤ 84 ˚C
-
-
V
A
IO(AV)
Average rectified output
current (both diodes
conducting)
square wave; δ = 0.5;
20
20
Ths ≤ 78 ˚C
IFRM
IFSM
Repetitive peak forward
current per diode
square wave; δ = 0.5;
-
A
Ths ≤ 78 ˚C
Non-repetitive peak forward t = 10 ms
-
-
100
110
A
A
current per diode
t = 8.3 ms
sinusoidal; Tj = 125 ˚C prior to
surge; with reapplied VRRM(max)
pulse width and repetition rate
limited by Tj max
IRRM
Tj
Peak repetitive reverse
surge current per diode
Operating junction
temperature
-
-
1
A
150
175
˚C
˚C
Tstg
Storage temperature
- 65
October 1998
1
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Visol
Visol
Cisol
Peak isolation voltage from
SOT186 package; R.H. ≤ 65%; clean and
-
-
-
-
1500
2500
-
V
all terminals to external
heatsink
dustfree
R.M.S. isolation voltage from SOT186A package; f = 50-60 Hz;
all terminals to external
heatsink
-
V
sinusoidal waveform; R.H. ≤ 65%; clean
and dustfree
Capacitance from pin 2 to
external heatsink
f = 1 MHz
10
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-hs
Thermal resistance junction per diode
-
-
-
-
6
5
K/W
K/W
to heatsink
both diodes
(with heatsink compound)
Thermal resistance junction in free air
to ambient
Rth j-a
-
55
-
K/W
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
VF
Forward voltage
IF = 10 A; Tj = 125˚C
IF = 20 A; Tj = 125˚C
IF = 20 A
-
-
-
-
-
-
0.45 0.57
0.64 0.72
0.64 0.84
V
V
V
IR
Reverse current
VR = VRWM
0.3
22
1.3
35
-
mA
mA
pF
VR = VRWM; Tj = 100˚C
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C
Cd
Junction capacitance
380
October 1998
2
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
Ths(max) (C)
D = 1.0
0.5
Forward dissipation, PF (W)
10
Reverse current, IR (mA)
90
100
Vo = 0.42 V
Rs = 0.015 Ohms
125 C
8
6
102
114
10
100 C
0.2
0.1
75 C
1
126
4
2
0
50 C
p
t
t
p
I
D =
T
0.1
Tj = 25 C
138
150
t
T
0.01
0
5
10
15
0
25
50
Average forward current, IF(AV) (A)
Reverse voltage, VR (V)
Fig.1. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
Fig.4. Typical reverse leakage current per diode;
IR = f(VR); parameter Tj
IF(AV) =IF(RMS) x √D.
2.2
Ths(max) (C)
a = 1.57
Forward dissipation, PF (W)
Vo = 0.42 V
Rs = 0.015 Ohms
Cd / pF
8
7
6
5
4
3
2
1
0
102
108
114
120
126
132
138
144
150
1000
100
10
1.9
2.8
4
1
10
100
0
2
4
6
8
10
Average forward current, IF(AV) (A)
VR / V
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
Fig.5. Typical junction capacitance per diode;
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.
factor = IF(RMS) / IF(AV)
.
Transient thermal impedance, Zth j-hs (K/W)
10
Forward current, IF (A)
50
40
30
20
10
0
Tj = 25 C
Tj = 125 C
1
typ
0.1
max
t
T
p
t
p
P
D =
D
t
T
0.01
1us
10us 100us 1ms
10ms 100ms
1s
10s
0
0.2
0.4
0.6
0.8
1
1.2
1.4
pulse width, tp (s)
Forward voltage, VF (V)
Fig.3. Typical and maximum forward characteristic
IF = f(VF); parameter Tj
Fig.6. Transient thermal impedance per diode;
Zth j-hs = f(tp).
October 1998
3
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.2
max
5.7
max
4.4
max
0.9
3.2
3.0
0.5
2.9 max
4.4
4.0
7.9
7.5
17
max
seating
plane
3.5 max
not tinned
4.4
13.5
min
1
2
3
0.9
0.7
M
0.4
0.55 max
1.3
2.54
5.08
top view
Fig.7. SOT186; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
4
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
6.4
2.5
0.8 max. depth
15.8
max
seating
plane
15.8
max.
19
max.
3 max.
not tinned
3
2.5
13.5
min.
1
2
3
M
0.4
1.0 (2x)
0.6
2.5
0.9
0.7
2.54
0.5
5.08
1.3
Fig.8. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.300
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR2045CTF, PBYR2045CTX series
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
6
Rev 1.300
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