PBYR240CT [NXP]

Rectifier diodes Schottky barrier; 整流二极管肖特基势垒
PBYR240CT
型号: PBYR240CT
厂家: NXP    NXP
描述:

Rectifier diodes Schottky barrier
整流二极管肖特基势垒

整流二极管
文件: 总5页 (文件大小:43K)
中文:  中文翻译
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Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
FEATURES  
SYMBOL  
QUICK REFERENCE DATA  
• Low forward volt drop  
• Fast switching  
• Reverse surge capability  
• High thermal cycling performance  
• low profile surface mounting  
package  
VR = 40 V/ 45 V  
IO(AV) = 2 A  
a1  
1
a2  
3
k
2
VF 0.45V  
GENERAL DESCRIPTION  
PINNING  
SOT223  
Dual, common cathode schottky  
PIN  
DESCRIPTION  
anode 1  
cathode  
4
rectifier diodes in  
a
plastic  
envelope. Intended for use as  
output rectifiers in low voltage, high  
frequency switched mode power  
supplies.  
1
2
3
anode 2  
cathode  
The PBYR245CT series is supplied  
in the surface mounting SOT223  
package.  
tab  
2
3
1
LIMITING VALUES  
Limiting values in accordance with the Absolute Maximum System (IEC 134)  
SYMBOL PARAMETER CONDITIONS  
MIN.  
MAX.  
UNIT  
PBYR2  
40CT  
45CT  
VRRM  
VRWM  
Peak repetitive reverse  
-
-
40  
45  
45  
45  
V
V
voltage  
Working peak reverse  
voltage  
Continuous reverse voltage  
40  
40  
VR  
T
sp 74 ˚C  
-
-
V
A
IO(AV)  
Average rectified output  
current (both diodes  
conducting)  
square wave; δ = 0.5; Tsp 119 ˚C  
2
2
IFRM  
IFSM  
Repetitive peak forward  
current per diode  
square wave; δ = 0.5; Tsp 119 ˚C  
-
A
Non-repetitive peak forward t = 10 ms  
-
-
6
6.6  
A
A
current per diode  
t = 8.3 ms  
sinusoidal; Tj = 125 ˚C prior to  
surge; with reapplied VRRM(max)  
pulse width and repetition rate  
limited by Tj max  
IRRM  
Tj  
Peak repetitive reverse  
surge current per diode  
Operating junction  
temperature  
-
-
1
A
150  
150  
˚C  
˚C  
Tstg  
Storage temperature  
- 40  
THERMAL RESISTANCES  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
Rth j-a  
Thermal resistance junction pcb mounted, minimum footprint  
to ambient pcb mounted, pad area as in fig:1  
-
-
156  
70  
-
-
K/W  
K/W  
July 1998  
1
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
ELECTRICAL CHARACTERISTICS  
Tj = 25 ˚C unless otherwise specified  
SYMBOL PARAMETER  
CONDITIONS  
MIN. TYP. MAX. UNIT  
VF  
IR  
Forward voltage  
Reverse current  
IF = 1 A; Tj = 125˚C  
IF = 2 A  
-
-
-
-
-
0.41 0.45  
V
V
mA  
mA  
pF  
0.58  
0.03  
1.5  
0.7  
0.2  
10  
-
VR = VRWM  
VR = VRWM; Tj = 100˚C  
VR = 5 V; f = 1 MHz, Tj = 25˚C to 125˚C  
Cd  
Junction capacitance  
60  
PRINTED CIRCUIT BOARD  
Dimensions in mm.  
36  
18  
60  
4.5  
4.6  
9
10  
7
15  
50  
Fig.1. PCB for thermal resistance and power rating for SOT223.  
PCB: FR4 epoxy glass (1.6 mm thick), copper laminate (35 µm thick).  
July 1998  
2
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
Forward dissipation, PF (W)  
1
Reverse current, IR (mA)  
10  
1
Vo = 0.27 V  
Rs = 0.183 Ohms  
125 C  
100 C  
0.8  
0.6  
D = 1.0  
0.5  
0.2  
0.1  
0.1  
75 C  
50 C  
0.4  
0.2  
0
t
T
p
tp  
I
D =  
0.01  
Tj = 25 C  
t
T
0.001  
0
0.5  
1
1.5  
0
25  
50  
Average forward current, IF(AV) (A)  
Reverse voltage, VR (V)  
Fig.2. Maximum forward dissipation PF = f(IF(AV)) per  
diode; square current waveform where  
Fig.5. Typical reverse leakage current per diode;  
IR = f(VR); parameter Tj  
IF(AV) =IF(RMS) x D.  
Forward dissipation, PF (W)  
Cd / pF  
1
0.8  
0.6  
0.4  
0.2  
0
1000  
100  
10  
Vo = 0.27 V  
Rs = 0.183 Ohms  
a = 1.57  
1.9  
2.2  
2.8  
4
1
10  
100  
0
0.2  
0.4  
0.6  
0.8  
1
Average forward current, IF(AV) (A)  
VR / V  
Fig.3. Maximum forward dissipation PF = f(IF(AV)) per  
diode; sinusoidal current waveform where a = form  
Fig.6. Typical junction capacitance per diode;  
Cd = f(VR); f = 1 MHz; Tj = 25˚C to 125 ˚C.  
factor = IF(RMS) / IF(AV)  
.
Transient thermal impedance, Zth j-sp (K/W)  
100  
Forward current, IF (A)  
3
2.5  
2
Tj = 25 C  
Tj = 125 C  
10  
1
typ  
1.5  
1
max  
t
p
t
p
P
0.1  
D =  
D
T
0.5  
0
t
T
0.01  
1us  
10us 100us 1ms  
10ms 100ms  
1s  
10s  
0
0.2  
0.4  
0.6  
0.8  
1
1.2  
1.4  
pulse width, tp (s)  
Forward voltage, VF (V)  
Fig.4. Typical and maximum forward characteristic  
IF = f(VF); parameter Tj  
Fig.7. Transient thermal impedance; per diode;  
Zth j-sp = f(tp).  
July 1998  
3
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
MECHANICAL DATA  
Dimensions in mm  
Net Mass: 0.11 g  
6.7  
6.3  
B
3.1  
2.9  
0.32  
0.24  
0.2  
M
A
A
4
0.10  
0.02  
7.3  
6.7  
3.7  
3.3  
16  
max  
13  
2
3
1
10  
max  
1.05  
0.85  
0.80  
0.60  
2.3  
1.8  
max  
M
0.1  
(4x)  
B
4.6  
Fig.8. SOT223 surface mounting package.  
Notes  
1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines".  
Order code: 9397 750 00505.  
2. Epoxy meets UL94 V0 at 1/8".  
July 1998  
4
Rev 1.400  
Philips Semiconductors  
Product specification  
Rectifier diodes  
Schottky barrier  
PBYR245CT series  
DEFINITIONS  
Data sheet status  
Objective specification  
This data sheet contains target or goal specifications for product development.  
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.  
Product specification  
This data sheet contains final product specifications.  
Limiting values  
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one  
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and  
operation of the device at these or at any other conditions above those given in the Characteristics sections of  
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.  
Application information  
Where application information is given, it is advisory and does not form part of the specification.  
Philips Electronics N.V. 1998  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the  
copyright owner.  
The information presented in this document does not form part of any quotation or contract, it is believed to be  
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under patent or other  
industrial or intellectual property rights.  
LIFE SUPPORT APPLICATIONS  
These products are not designed for use in life support appliances, devices or systems where malfunction of these  
products can be reasonably expected to result in personal injury. Philips customers using or selling these products  
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting  
from such improper use or sale.  
July 1998  
5
Rev 1.400  

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