PDTA114TET/R [NXP]
TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal;
| 型号： | PDTA114TET/R |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, PLASTIC, SC-75, 3 PIN, BIP General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总11页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDTA114T series
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
Rev. 07 — 20 April 2007
Product data sheet
1. Product profile
1.1 General description
PNP Resistor-Equipped Transistors (RET) family in small plastic packages.
Table 1.
Product overview
Type number
Package
NXP
NPN complement
JEITA
SC-75
SC-59A
SC-101
SC-43A
-
JEDEC
PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS[1]
PDTA114TT
PDTA114TU
SOT416
SOT346
SOT883
SOT54
SOT23
SOT323
-
PDTC114TE
PDTC114TK
PDTC114TM
PDTC114TS
PDTC114TT
PDTC114TU
TO-236
-
TO-92
TO-236AB
-
SC-70
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
I 100 mA output current capability
I Built-in bias resistors
I Reduces component count
I Reduces pick and place costs
I Simplifies circuit design
1.3 Applications
I Digital applications
I Cost-saving alternative to BC857 series
in digital applications
I Control of IC inputs
I Low current peripheral driver
1.4 Quick reference data
Table 2.
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
Typ
Max
−50
−100
13
Unit
V
collector-emitter voltage
output current
open base
-
-
-
-
mA
kΩ
R1
bias resistor 1 (input)
7
10
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
2. Pinning information
Table 3.
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
3
1
1
1
1
1
001aab347
006aaa217
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
1
2
R1
3
001aab348
006aaa217
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
3
001aab447
006aaa217
SOT23; SOT323; SOT346; SOT416
1
2
3
input (base)
3
3
2
GND (emitter)
output (collector)
R1
1
2
006aaa144
sym009
SOT883
1
2
3
input (base)
1
2
3
2
GND (emitter)
output (collector)
3
R1
Transparent
top view
sym009
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
2 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
3. Ordering information
Table 4.
Ordering information
Type number
Package
Name
Description
Version
SOT416
SOT346
PDTA114TE
PDTA114TK
PDTA114TM
SC-75
SC-59A
SC-101
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
leadless ultra small plastic package; 3 solder lands; SOT883
body 1.0 × 0.6 × 0.5 mm
PDTA114TS[1]
SC-43A
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTA114TT
PDTA114TU
-
plastic surface-mounted package; 3 leads
plastic surface-mounted package; 3 leads
SOT23
SC-70
SOT323
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5.
Marking codes
Type number
PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS
PDTA114TT
PDTA114TU
Marking code[1]
11
23
DE
TA114T
*11
*23
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
3 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
5. Limiting values
Table 6.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
IO
Parameter
Conditions
open emitter
open base
Min
Max
−50
−50
−5
Unit
V
collector-base voltage
collector-emitter voltage
emitter-base voltage
output current
-
-
-
-
-
V
open collector
V
−100
−100
mA
mA
ICM
peak collector current
single pulse;
tp ≤ 1 ms
Ptot
total power dissipation
PDTA114TE
Tamb ≤ 25 °C
[1]
[1]
-
150
250
250
500
250
200
150
+150
+150
mW
mW
mW
mW
mW
mW
°C
PDTA114TK
-
[2][3]
[1]
PDTA114TM
-
PDTA114TS
-
[1]
PDTA114TT
-
[1]
PDTA114TU
-
Tj
junction temperature
ambient temperature
storage temperature
-
Tamb
Tstg
−65
−65
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
6. Thermal characteristics
Table 7.
Thermal characteristics
Symbol
Parameter
Conditions
Min
Typ Max
Unit
Rth(j-a)
thermal resistance from
junction to ambient
in free air
[1]
[1]
PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS
PDTA114TT
PDTA114TU
-
-
-
-
-
-
-
-
-
-
-
-
833
500
500
250
500
625
K/W
K/W
K/W
K/W
K/W
K/W
[2][3]
[1]
[1]
[1]
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Reflow soldering is the only recommended soldering method.
[3] Device mounted on an FR4 PCB with 60 µm copper strip line, standard footprint.
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
4 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
7. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
ICBO collector-base cut-off VCB = −50 V; IE = 0 A
Min
Typ
Max
Unit
-
-
−100
nA
current
ICEO
collector-emitter
cut-off current
VCE = −30 V; IB = 0 A
-
-
-
-
−1
µA
µA
VCE = −30 V; IB = 0 A;
Tj = 150 °C
−50
IEBO
emitter-base cut-off
current
VEB = −5 V; IC = 0 A
-
-
−100
nA
hFE
DC current gain
VCE = −5 V; IC = −1 mA
200
-
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = −10 mA;
IB = −0.5 mA
−150
mV
R1
Cc
bias resistor 1 (input)
7
-
10
-
13
3
kΩ
collector capacitance VCB = −10 V; IE = ie = 0 A;
pF
f = 1 MHz
006aaa554
006aaa555
600
−1
h
FE
(1)
V
CEsat
(V)
400
200
0
−1
−10
(2)
(3)
(1)
(2)
(3)
−2
−10
−1
2
−1
2
−10
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 150 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
5 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
8. Package outline
3.1
2.7
1.3
1.0
1.8
1.4
0.95
0.60
3
0.6
0.2
3
0.45
0.15
3.0 1.7
2.5 1.3
1.75 0.9
1.45 0.7
1
2
1
2
0.30
0.15
0.25
0.10
0.50
0.35
0.26
0.10
1.9
1
Dimensions in mm
04-11-04
Dimensions in mm
04-11-11
Fig 3. Package outline SOT416 (SC-75)
Fig 4. Package outline SOT346 (SC-59A/TO-236)
0.62
0.55
0.50
0.46
0.55
0.47
0.45
0.38
4.2
3.6
3
0.30
0.22
0.48
0.40
1.02
0.95
0.65
1
2
4.8
4.4
2.54
0.30
0.22
1.27
3
2
1
0.20
0.12
5.2
5.0
14.5
12.7
0.35
Dimensions in mm
03-04-03
Dimensions in mm
04-11-16
Fig 5. Package outline SOT883 (SC-101)
Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
3.6
4.2
3.6
1.27
0.48
0.40
3 max
1
2
3
2.5
0.48
max
0.40
1
4.8
4.4
2
5.08
4.8
4.4
2.54
1.27
3
2.54
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 7. Package outline SOT54A
Fig 8. Package outline SOT54 variant
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
6 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
3.0
2.8
1.1
0.9
2.2
1.8
1.1
0.8
0.45
0.15
3
3
0.45
0.15
2.5 1.4
2.1 1.2
2.2 1.35
2.0 1.15
1
2
1
2
0.4
0.3
0.25
0.10
0.48
0.38
0.15
0.09
1.9
1.3
Dimensions in mm
04-11-04
Dimensions in mm
04-11-04
Fig 9. Package outline SOT23 (TO-236AB)
Fig 10. Package outline SOT323 (SC-70)
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
7 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
9. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
3000 5000 10000
PDTA114TE
PDTA114TK
PDTA114TM
PDTA114TS
SOT416
SOT346
SOT883
SOT54
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
2 mm pitch, 8 mm tape and reel
bulk, straight leads
-115
-
-135
-135
-315
-
-115
-
-
-
-
-412
SOT54A
tape and reel, wide pitch
-
-
-116
-126
-
tape ammopack, wide pitch
-
-
SOT54 variant bulk, delta pinning
-
-112
PDTA114TT
PDTA114TU
SOT23
4 mm pitch, 8 mm tape and reel
4 mm pitch, 8 mm tape and reel
-215
-115
-
-
-235
-135
SOT323
[1] For further information and the availability of packing methods, see Section 12.
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
8 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
10. Revision history
Table 10. Revision history
Document ID
Release date
20070420
Data sheet status
Change notice
Supersedes
PDTA114T_SER_7
Modifications:
Product data sheet
-
PDTA114T_SERIES_6
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
• Type number PDTA114TEF removed
• Section 1.2 “Features”: amended
• Section 1.3 “Applications”: amended
• Table 4 “Ordering information”: added
• Table 5 “Marking codes”: enhanced table note section
• Table 6 “Limiting values”: ICM peak collector current conditions added
• Figure 1, 2, 7 and 8: added
• Figure 3, 4, 5, 6, 9 and 10: superseded by minimized package outline drawings
• Section 9 “Packing information”: added
• Section 11 “Legal information”: updated
PDTA114T_SERIES_6
PDTA114T_SERIES_5
PDTA114T_SERIES_4
20040802
20030909
20030410
Product specification
Product specification
Product specification
-
-
-
PDTA114T_SERIES_5
PDTA114T_SERIES_4
PDTA114TE_2
PDTA114TK_3
PDTA114TS_2
PDTA114TT_3
PDTA114TU_3
PDTA114TE_2
PDTA114TK_3
PDTA114TS_2
PDTA114TT_3
PDTA114TU_3
19980723
19980515
19980515
19990413
19990413
Preliminary specification
Product specification
Product specification
Objective specification
Product specification
-
-
-
-
-
PDTA114TE_1
PDTA114TK_2
PDTA114TS_1
PDTA114TT_2
PDTA114TU_2
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
9 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of a NXP Semiconductors product can reasonably be expected to
11.2 Definitions
result in personal injury, death or severe property or environmental damage.
NXP Semiconductors accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or applications and therefore
such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
11.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
12. Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
PDTA114T_SER_7
© NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 07 — 20 April 2007
10 of 11
PDTA114T series
NXP Semiconductors
PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = open
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 20 April 2007
Document identifier: PDTA114T_SER_7
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