PDTB123YT [NXP]
PNP 500 mA, 50 V resistor-equipped transistors; PNP 500毫安， 50 V电阻配备晶体管
| 型号： | PDTB123YT |
| 厂家： | 
NXP |
| 描述： | PNP 500 mA, 50 V resistor-equipped transistors |
| 文件： | 总10页 (文件大小：74K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PDTB123Y series
PNP 500 mA, 50 V resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 10 kΩ
Rev. 01 — 27 April 2005
Product data sheet
1. Product profile
1.1 General description
500 mA PNP Resistor-Equipped Transistors (RET) family.
Table 1:
Product overview
Type number
Package
Philips
SOT346
SOT54
NPN complement
JEITA
SC-59A
SC-43A
-
JEDEC
TO-236
TO-92
PDTB123YK
PDTB123YS[1]
PDTB123YT
PDTD123YK
PDTD123YS
PDTD123YT
SOT23
TO-236AB
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).
1.2 Features
■ Built-in bias resistors
■ Reduces component count
■ Simplifies circuit design
■ 500 mA output current capability
■ Reduces pick and place costs
■ ±10 % resistor ratio tolerance
1.3 Applications
■ Digital application in automotive and
industrial segments
■ Cost-saving alternative for BC807 series
in digital applications
■ Controlling IC inputs
■ Switching loads
1.4 Quick reference data
Table 2:
Symbol
VCEO
IO
Quick reference data
Parameter
Conditions
Min
-
Typ
-
Max
−50
−500
2.86
5
Unit
V
collector-emitter voltage
output current (DC)
bias resistor 1 (input)
bias resistor ratio
open base
-
-
mA
kΩ
R1
1.54
4.1
2.2
4.55
R2/R1
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
2. Pinning information
Table 3:
Pinning
Pin
Description
Simplified outline
Symbol
SOT54
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
1
1
1
2
3
R2
001aab347
006aaa148
SOT54A
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
R2
3
001aab348
006aaa148
SOT54 variant
1
2
3
input (base)
2
3
output (collector)
GND (emitter)
R1
1
2
3
R2
001aab447
006aaa148
SOT23, SOT346
1
2
3
input (base)
3
3
GND (emitter)
R1
1
output (collector)
R2
1
2
2
006aaa144
sym003
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
2 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
3. Ordering information
Table 4:
Ordering information
Type number
Package
Name
Description
Version
PDTB123YK
PDTB123YS[1]
SC-59A
SC-43A
plastic surface mounted package; 3 leads
SOT346
plastic single-ended leaded (through hole) package; SOT54
3 leads
PDTB123YT
-
plastic surface mounted package; 3 leads
SOT23
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).
4. Marking
Table 5:
Marking codes
Type number
PDTB123YK
PDTB123YS
PDTB123YT
Marking code[1]
E8
B123YS
*7Y
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
5. Limiting values
Table 6:
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VEBO
VI
Parameter
Conditions
open emitter
open base
Min
Max
−50
−50
−5
Unit
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
-
-
-
V
V
V
open collector
positive
-
-
-
+5
V
negative
−12
−500
V
IO
output current (DC)
total power dissipation
SOT346
mA
Ptot
Tamb ≤ 25 °C
[1]
[1]
[1]
-
250
mW
mW
mW
°C
SOT54
-
500
SOT23
-
250
Tstg
Tj
storage temperature
junction temperature
ambient temperature
−65
-
+150
150
°C
Tamb
−65
+150
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
3 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
6. Thermal characteristics
Table 7:
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
[1]
thermal resistance
from junction to
ambient
in free air
SOT346
SOT54
SOT23
-
-
-
-
-
-
500
250
500
K/W
K/W
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8:
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
collector-basecut-off VCB = −40 V; IE = 0 A
Min
Typ
Max
−100
−100
−0.5
Unit
nA
ICBO
-
-
-
-
-
-
current
VCB = −50 V; IE = 0 A
VCE = −50 V; IB = 0 A
nA
ICEO
IEBO
collector-emitter
cut-off current
µA
emitter-base cut-off VEB = −5 V; IC = 0 A
-
-
−0.65 mA
current
hFE
DC current gain
VCE = −5 V; IC = −50 mA
70
-
-
-
-
VCEsat
collector-emitter
saturation voltage
IC = −50 mA;
IB = −2.5 mA
−0.3
−1.0
−1.4
mV
V
VI(off)
VI(on)
off-state input
voltage
VCE = −5 V; IC = −100 µA
−0.4
−0.5
−0.6
−1.0
on-state input
voltage
VCE = −0.3 V;
IC = −20 mA
V
R1
bias resistor 1 (input)
bias resistor ratio
1.54
4.1
-
2.2
4.55
11
2.86
kΩ
R2/R1
Cc
5
-
collector capacitance VCB = −10 V; IE = ie = 0 A;
pF
f = 100 MHz
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
4 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
006aaa357
006aaa358
3
−1
10
−10
(1)
h
FE
(2)
(3)
V
CEsat
(V)
2
10
(1)
(2)
10
(3)
−2
1
−10
−10
−1
2
3
2
−1
−10
−10
−10
−1
−10
−10
I
(mA)
I (mA)
C
C
VCE = −5 V
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −40 °C
Fig 1. DC current gain as a function of collector
current; typical values
Fig 2. Collector-emitter saturation voltage as a
function of collector current; typical values
006aaa359
006aaa360
−10
−10
V
I(on)
V
I(off)
(V)
(V)
(1)
(2)
(3)
(1)
(2)
(3)
−1
−1
−1
−1
−10
−10
−1
2
3
−1
−10
−1
−10
−10
−10
−10
−1
−10
I
(mA)
I (mA)
C
C
VCE = −0.3 V
VCE = −5 V
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −40 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 3. On-state input voltage as a function of collector
current; typical values
Fig 4. Off-state input voltage as a function of collector
current; typical values
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
5 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
8. Package outline
3.1
2.7
1.3
1.0
0.45
0.38
4.2
3.6
3
0.6
0.2
0.48
0.40
3.0 1.7
2.5 1.3
1
2
4.8
4.4
2.54
1.27
3
1
2
0.50
0.35
0.26
0.10
5.2
5.0
14.5
12.7
1.9
Dimensions in mm
04-11-11
Dimensions in mm
04-11-16
Fig 5. Package outline SOT346 (SC-59A/TO-236)
Fig 6. Package outline SOT54 (SC-43A/TO-92)
0.45
0.38
0.45
0.38
4.2
4.2
3.6
3.6
1.27
0.48
0.40
3 max
1
2.5
0.48
max
0.40
1
2
4.8
4.4
2
5.08
4.8
4.4
2.54
1.27
3
2.54
3
5.2
5.0
14.5
12.7
5.2
5.0
14.5
12.7
Dimensions in mm
04-06-28
Dimensions in mm
05-01-10
Fig 7. Package outline SOT54A
Fig 8. Package outline SOT54 variant
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 9. Package outline SOT23 (TO-236AB)
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
6 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
9. Packing information
Table 9:
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code. [1]
Type number
Package
Description
Packing quantity
3000
4 mm pitch, 8 mm tape and reel -115
5000
10000
-135
-
PDTB123YK
PDTB123YS
SOT346
SOT54
-
bulk, straight leads
-
-
-
-
-412
SOT54A
tape and reel, wide pitch
tape ammopack, wide pitch
-
-116
-126
-
-
SOT54 variant bulk, delta pinning
SOT23
-112
-
PDTB123YT
4 mm pitch, 8 mm tape and reel -215
-235
[1] For further information and the availability of packing methods, see Section 14.
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
7 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
10. Revision history
Table 10: Revision history
Document ID
Release date Data sheet status
20050427 Product data sheet
Change notice
Doc. number
Supersedes
PDTB123Y_SER_1
-
9397 750 14905
-
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
8 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
11. Data sheet status
Level Data sheet status[1] Product status[2] [3]
Definition
I
Objective data
Development
This data sheet contains data from the objective specification for product development. Philips
Semiconductors reserves the right to change the specification in any manner without notice.
II
Preliminary data
Qualification
This data sheet contains data from the preliminary specification. Supplementary data will be published
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in
order to improve the design and supply the best possible product.
III
Product data
Production
This data sheet contains data from the product specification. Philips Semiconductors reserves the
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant
changes will be communicated via a Customer Product/Process Change Notification (CPCN).
[1]
[2]
Please consult the most recently issued data sheet before initiating or completing a design.
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at
URL http://www.semiconductors.philips.com.
[3]
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
12. Definitions
13. Disclaimers
Short-form specification — The data in a short-form specification is
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes in the products - including circuits, standard cells, and/or
software - described or contained herein in order to improve design and/or
performance. When the product is in full production (status ‘Production’),
relevant changes will be communicated via a Customer Product/Process
Change Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
license or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products are
free from patent, copyright, or mask work right infringement, unless otherwise
specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
14. Contact information
For additional information, please visit: http://www.semiconductors.philips.com
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com
9397 750 14905
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 27 April 2005
9 of 10
PDTB123Y series
Philips Semiconductors
PNP 500 mA resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 3
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Contact information . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
9
10
11
12
13
14
© Koninklijke Philips Electronics N.V. 2005
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner. The information presented in this document does
not form part of any quotation or contract, is believed to be accurate and reliable and may
be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under
patent- or other industrial or intellectual property rights.
Date of release: 27 April 2005
Document number: 9397 750 14905
Published in The Netherlands
相关型号：
PDTB123YT,215
PDTB123YT - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 10 kOhm TO-236 3-Pin
NXP
PDTB123YT,235
TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal
NXP
PDTB123YT-Q
50 V, 500 mA PNP resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩProduction
NEXPERIA
©2020 ICPDF网 联系我们和版权申明