PDTC123JMB [NXP]
100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN;
| 型号： | PDTC123JMB |
| 厂家： | 
NXP |
| 描述： | 100mA, 50V, NPN, Si, SMALL SIGNAL TRANSISTOR, 1 X 0.60 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, PLASTIC, DFN1006B-3, 3 PIN 晶体 晶体管 |
| 文件： | 总8页 (文件大小：54K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PDTC123ET
NPN resistor-equipped transistor
1999 May 21
Product specification
Supersedes data of 1998 May 08
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
FEATURES
• Built-in bias resistors R1 and R2 (typ. 2.2 kΩ each)
• Simplification of circuit design
• Reduces number of components and board space.
3
k, 4 columns
3
APPLICATIONS
R1
1
• Especially suitable for space reduction in interface and
driver circuits
R2
2
• Inverter circuit configurations without use of external
resistors.
1
2
Top view
MAM097
DESCRIPTION
NPN resistor-equipped transistor in a SOT23 plastic
package. PNP complement: PDTA123ET.
Fig.1 Simplified outline (SOT23) and symbol.
PINNING
PIN
DESCRIPTION
1
2
3
base/input
emitter/ground
collector/output
1
3
MARKING
2
TYPE NUMBER
MARKING CODE(1)
MGA893 - 1
PDTC123ET
26
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
Fig.2 Equivalent inverter symbol.
1999 May 21
2
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
open emitter
MIN.
MAX.
50
UNIT
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
−
−
−
V
V
V
open base
50
10
open collector
positive
−
−
−
−
−
+12
−10
100
100
250
+150
150
+150
V
V
negative
IO
output current (DC)
peak collector current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
mA
mA
mW
°C
ICM
Ptot
Tstg
Tj
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
500
K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
collector cut-off current
collector cut-off current
CONDITIONS
IE = 0; VCB = 50 V
MIN.
TYP. MAX. UNIT
−
−
100
1
nA
µA
µA
mA
ICEO
IB = 0; VCE = 30 V
−
−
IB = 0; VCE = 30 V; Tj = 150 °C
IC = 0; VEB = 5 V
−
−
50
2
IEBO
hFE
emitter cut-off current
DC current gain
−
−
IC = 20 mA; VCE = 5 V
30
−
−
−
VCEsat
Vi(off)
Vi(on)
R1
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA
−
150
0.5
−
mV
V
input-off voltage
input-on voltage
input resistor
IC = 1 mA; VCE = 5 V
−
1.2
1.6
2.2
IC = 20 mA; VCE = 0.3 V
2
V
1.54
2.86
kΩ
R2
-------
R1
resistor ratio
0.8
1
1.2
2.5
Cc
collector capacitance
IE = ie = 0; VCB = 10 V;
f = 1 MHz
−
−
pF
1999 May 21
3
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
MGM908
MGM907
3
3
10
10
handbook, halfpage
handbook, halfpage
h
FE
V
CEsat
(mV)
(1)
(2)
2
10
(3)
2
10
(1)
(2)
(3)
10
1
10
10
1
−1
2
2
1
10
10
10
10
I
(mA)
I
(mA)
C
C
IC/IB = 20.
VCE = 5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −40 °C.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
Tamb = −40 °C.
Fig.3 DC current gain as a function of collector
current; typical values.
Fig.4 Collector-emitter saturation voltage as a
function of collector current; typical values.
MGM910
MGM909
2
10
10
handbook, halfpage
handbook, halfpage
V
i(on)
(V)
V
i(off)
(V)
10
(1)
(2)
1
(3)
(1) (2)
(3)
1
−1
−1
10
10
−2
−1
−1
2
10
10
1
10
10
1
10
10
I
(mA)
I
(mA)
C
C
VCE = 5 V.
VCE = 0.3 V.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
(1) Tamb = −40 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.5 Input-off voltage as a function of collector
current; typical values.
Fig.6 Input-on voltage as a function of collector
current; typical values.
1999 May 21
4
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 21
5
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 21
6
Philips Semiconductors
Product specification
NPN resistor-equipped transistor
PDTC123ET
NOTES
1999 May 21
7
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© Philips Electronics N.V. 1999
SCA65
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
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under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
115002/00/03/pp8
Date of release: 1999 May 21
Document order number: 9397 750 05858
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