PDTD123TS [NXP]

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open; NPN 500毫安, 50 V电阻配备晶体管; R1 = 2.2千欧姆, R2 =开放
PDTD123TS
型号: PDTD123TS
厂家: NXP    NXP
描述:

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
NPN 500毫安, 50 V电阻配备晶体管; R1 = 2.2千欧姆, R2 =开放

晶体 晶体管 开关
文件: 总10页 (文件大小:68K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PDTD123T series  
NPN 500 mA, 50 V resistor-equipped transistors;  
R1 = 2.2 k, R2 = open  
Rev. 02 — 21 July 2005  
Product data sheet  
1. Product profile  
1.1 General description  
500 mA NPN Resistor-Equipped Transistors (RET) family.  
Table 1:  
Product overview  
Type number  
Package  
Philips  
SOT346  
SOT54  
PNP complement  
JEITA  
SC-59A  
SC-43A  
-
JEDEC  
TO-236  
TO-92  
PDTD123TK  
PDTD123TS[1]  
PDTD123TT  
PDTB123TK  
PDTB123TS  
PDTB123TT  
SOT23  
TO-236AB  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2).  
1.2 Features  
Built-in bias resistors  
Reduces component count  
Simplifies circuit design  
500 mA output current capability  
Reduces pick and place costs  
1.3 Applications  
Digital application in automotive and  
industrial segments  
Cost saving alternative for BC817 series  
in digital applications  
Controlling IC inputs  
Switching loads  
1.4 Quick reference data  
Table 2:  
Symbol  
VCEO  
IO  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
50  
Unit  
V
collector-emitter voltage  
output current  
open base  
-
-
-
-
500  
2.86  
mA  
k  
R1  
bias resistor 1 (input)  
1.54  
2.2  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
2. Pinning information  
Table 3:  
Pinning  
Pin  
Description  
Simplified outline  
Symbol  
SOT54  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
1
2
3
1
1
1
1
001aab347  
006aaa218  
SOT54A  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
1
2
R1  
3
001aab348  
006aaa218  
SOT54 variant  
1
2
3
input (base)  
2
3
output (collector)  
GND (emitter)  
R1  
1
2
3
001aab447  
006aaa218  
SOT23, SOT346  
1
2
3
input (base)  
3
3
2
GND (emitter)  
output (collector)  
R1  
1
2
006aaa144  
sym012  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
2 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
3. Ordering information  
Table 4:  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
SOT346  
SOT54  
PDTD123TK  
SC-59A plastic surface mounted package; 3 leads  
PDTD123TS[1] SC-43A plastic single-ended leaded (through hole) package;  
3 leads  
PDTD123TT  
-
plastic surface mounted package; 3 leads  
SOT23  
[1] Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9).  
4. Marking  
Table 5:  
Marking codes  
Type number  
PDTD123TK  
PDTD123TS  
PDTD123TT  
Marking code[1]  
E9  
TD123TS  
*1T  
[1] * = -: made in Hong Kong  
* = p: made in Hong Kong  
* = t: made in Malaysia  
* = W: made in China  
5. Limiting values  
Table 6:  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
VCBO  
VCEO  
VEBO  
VI  
Parameter  
Conditions  
open emitter  
open base  
Min  
Max  
50  
50  
5
Unit  
V
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage  
-
-
-
V
open collector  
V
positive  
-
-
-
+12  
5  
V
negative  
V
IO  
output current  
total power dissipation  
SOT346  
500  
mA  
[1]  
Ptot  
Tamb 25 °C  
-
250  
mW  
mW  
mW  
°C  
SOT54  
-
500  
SOT23  
-
250  
Tstg  
Tj  
storage temperature  
junction temperature  
ambient temperature  
65  
-
+150  
150  
°C  
Tamb  
65  
+150  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
3 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
6. Thermal characteristics  
Table 7:  
Thermal characteristics  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
Rth(j-a)  
thermal resistance from in free air  
junction to ambient  
SOT346  
SOT54  
SOT23  
-
-
-
-
-
-
500  
250  
500  
K/W  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
7. Characteristics  
Table 8:  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
100  
100  
0.5  
Unit  
nA  
ICBO  
collector-base cut-off VCB = 40 V; IE = 0 A  
current  
-
-
-
-
-
-
VCB = 50 V; IE = 0 A  
nA  
ICEO  
IEBO  
collector-emitter  
cut-off current  
VCE = 50 V; IB = 0 A  
µA  
emitter-base cut-off  
current  
VEB = 5 V; IC = 0 A  
-
-
100  
nA  
V
hFE  
DC current gain  
VCE = 5 V; IC = 50 mA  
IC = 50 mA; IB = 2.5 mA  
100  
-
300  
-
-
VCEsat  
collector-emitter  
0.3  
saturation voltage  
R1  
Cc  
bias resistor 1 (input)  
1.54  
-
2.2  
7
2.86  
-
kΩ  
collector capacitance VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
pF  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
4 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
006aaa447  
006aaa448  
3
1  
10  
10  
h
FE  
V
CEsat  
(V)  
(1)  
(2)  
(1)  
(3)  
(3)  
(2)  
2
2  
10  
10  
1  
2
3
1  
2
10  
1
10  
10  
10  
10  
1
10  
10  
I
(mA)  
I
(mA)  
C
C
VCE = 5 V  
IC/IB = 20  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
(1) Tamb = 100 °C  
(2) Tamb = 25 °C  
(3) Tamb = 40 °C  
Fig 1. DC current gain as a function of collector  
current; typical values  
Fig 2. Collector-emitter saturation voltage as a  
function of collector current; typical values  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
5 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
8. Package outline  
3.1  
2.7  
1.3  
1.0  
0.45  
0.38  
4.2  
3.6  
3
0.6  
0.2  
0.48  
0.40  
3.0 1.7  
2.5 1.3  
1
2
4.8  
4.4  
2.54  
1.27  
3
1
2
0.50  
0.35  
0.26  
0.10  
5.2  
5.0  
14.5  
12.7  
1.9  
Dimensions in mm  
04-11-11  
Dimensions in mm  
04-11-16  
Fig 3. Package outline SOT346 (SC-59A/TO-236)  
Fig 4. Package outline SOT54 (SC-43A/TO-92)  
0.45  
0.38  
0.45  
0.38  
4.2  
4.2  
3.6  
3.6  
1.27  
0.48  
0.40  
3 max  
1
2.5  
0.48  
max  
0.40  
1
2
4.8  
4.4  
2
5.08  
4.8  
4.4  
2.54  
1.27  
3
2.54  
3
5.2  
5.0  
14.5  
12.7  
5.2  
5.0  
14.5  
12.7  
Dimensions in mm  
04-06-28  
Dimensions in mm  
05-01-10  
Fig 5. Package outline SOT54A  
Fig 6. Package outline SOT54 variant  
3.0  
2.8  
1.1  
0.9  
3
0.45  
0.15  
2.5 1.4  
2.1 1.2  
1
2
0.48  
0.38  
0.15  
0.09  
1.9  
Dimensions in mm  
04-11-04  
Fig 7. Package outline SOT23 (TO-236AB)  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
6 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
9. Packing information  
Table 9:  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code. [1]  
Type number Package  
Description  
Packing quantity  
3000  
5000  
10000  
-135  
-
PDTD123TK SOT346  
PDTD123TS SOT54  
SOT54A  
4 mm pitch, 8 mm tape and reel  
bulk, straight leads  
-115  
-
-
-412  
tape and reel, wide pitch  
tape ammopack, wide pitch  
bulk, delta pinning  
-
-
-116  
-126  
-
-
-
SOT54 variant  
PDTD123TT SOT23  
-
-112  
-
4 mm pitch, 8 mm tape and reel  
-215  
-235  
[1] For further information and the availability of packing methods, see Section 15.  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
7 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
10. Revision history  
Table 10: Revision history  
Document ID  
Release date Data sheet status  
Change notice Doc. number  
Supersedes  
PDTD123T_SER_2 20050721  
Product data sheet  
- 9397 750 15214 PDTD123T_SER_1  
Modifications:  
Types PDTD123TS and PDTD123TT added  
PDTD123T_SER_1 20050603  
Product data sheet  
-
9397 750 14583  
-
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
8 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
11. Data sheet status  
Level Data sheet status[1] Product status[2] [3]  
Definition  
I
Objective data  
Development  
This data sheet contains data from the objective specification for product development. Philips  
Semiconductors reserves the right to change the specification in any manner without notice.  
II  
Preliminary data  
Qualification  
This data sheet contains data from the preliminary specification. Supplementary data will be published  
at a later date. Philips Semiconductors reserves the right to change the specification without notice, in  
order to improve the design and supply the best possible product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips Semiconductors reserves the  
right to make changes at any time in order to improve the design, manufacturing and supply. Relevant  
changes will be communicated via a Customer Product/Process Change Notification (CPCN).  
[1]  
[2]  
Please consult the most recently issued data sheet before initiating or completing a design.  
The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at  
URL http://www.semiconductors.philips.com.  
[3]  
For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
customers using or selling these products for use in such applications do so  
at their own risk and agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
12. Definitions  
Short-form specification The data in a short-form specification is  
extracted from a full data sheet with the same type number and title. For  
detailed information see the relevant data sheet or data handbook.  
Right to make changes — Philips Semiconductors reserves the right to  
make changes in the products - including circuits, standard cells, and/or  
software - described or contained herein in order to improve design and/or  
performance. When the product is in full production (status ‘Production’),  
relevant changes will be communicated via a Customer Product/Process  
Change Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these products, conveys no  
license or title under any patent, copyright, or mask work right to these  
products, and makes no representations or warranties that these products are  
free from patent, copyright, or mask work right infringement, unless otherwise  
specified.  
Limiting values definition Limiting values given are in accordance with  
the Absolute Maximum Rating System (IEC 60134). Stress above one or  
more of the limiting values may cause permanent damage to the device.  
These are stress ratings only and operation of the device at these or at any  
other conditions above those given in the Characteristics sections of the  
specification is not implied. Exposure to limiting values for extended periods  
may affect device reliability.  
Application information Applications that are described herein for any  
of these products are for illustrative purposes only. Philips Semiconductors  
make no representation or warranty that such applications will be suitable for  
the specified use without further testing or modification.  
14. Trademarks  
Notice — All referenced brands, product names, service names and  
13. Disclaimers  
trademarks are the property of their respective owners.  
Life support — These products are not designed for use in life support  
appliances, devices, or systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips Semiconductors  
15. Contact information  
For additional information, please visit: http://www.semiconductors.philips.com  
For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com  
9397 750 15214  
© Koninklijke Philips Electronics N.V. 2005. All rights reserved.  
Product data sheet  
Rev. 02 — 21 July 2005  
9 of 10  
PDTD123T series  
Philips Semiconductors  
NPN 500 mA resistor-equipped transistors; R1 = 2.2 k, R2 = open  
16. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 3  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Packing information. . . . . . . . . . . . . . . . . . . . . . 7  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 8  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . . 9  
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Contact information . . . . . . . . . . . . . . . . . . . . . 9  
3
4
5
6
7
8
9
10  
11  
12  
13  
14  
15  
© Koninklijke Philips Electronics N.V. 2005  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior  
written consent of the copyright owner. The information presented in this document does  
not form part of any quotation or contract, is believed to be accurate and reliable and may  
be changed without notice. No liability will be accepted by the publisher for any  
consequence of its use. Publication thereof does not convey nor imply any license under  
patent- or other industrial or intellectual property rights.  
Date of release: 21 July 2005  
Document number: 9397 750 15214  
Published in The Netherlands  

相关型号:

PDTD123TT

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 k-ohm, R2 = open
NXP

PDTD123TT

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = openProduction
NEXPERIA

PDTD123TT,215

PDTD123T_SER - NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin
NXP

PDTD123Y

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
NXP

PDTD123YK

Low VCEsat (BISS) transistors
NXP

PDTD123YQA

50 V, 500 mA NPN resistor-equipped transistors
NEXPERIA

PDTD123YS

NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 10 kΩ
NXP

PDTD123YT

Low VCEsat (BISS) transistors
NXP

PDTD123YT

50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩProduction
NEXPERIA

PDTD123YT-Q

50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩProduction
NEXPERIA

PDTD123YU

500 mA, 50 V NPN resistor-equipped transistors
NEXPERIA

PDTD123YU,135

Small Signal Bipolar Transistor, 0.5A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon
NXP