PEMD2 [NXP]

NPN/PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm; NPN / PNP电阻配备晶体管; R 1 = 22千欧,R2 = 22千欧
PEMD2
型号: PEMD2
厂家: NXP    NXP
描述:

NPN/PNP resistor-equipped transistors; R1 = 22 kohm, R2 = 22 kohm
NPN / PNP电阻配备晶体管; R 1 = 22千欧,R2 = 22千欧

晶体 晶体管 开关 光电二极管 PC
文件: 总10页 (文件大小:70K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DISCRETE SEMICONDUCTORS  
DATA SHEET  
PEMD2; PIMD2; PUMD2  
NPN/PNP resistor-equipped  
transistors; R1 = 22 k, R2 = 22 kΩ  
Product specification  
2004 Apr 21  
Supersedes data of 2003 Jun 06  
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
FEATURES  
QUICK REFERENCE DATA  
Built-in bias resistors  
SYMBOL  
PARAMETER  
TYP. MAX. UNIT  
Simplifies circuit design  
Reduces component count  
Reduces pick and place costs.  
VCEO  
collector-emitter  
voltage  
50  
V
IO  
output current (DC)  
NPN (PIMD2: PNP)  
PNP (PIMD2: NPN)  
bias resistor  
100  
mA  
TR1  
TR2  
R1  
APPLICATIONS  
22  
22  
kΩ  
kΩ  
General purpose switching and amplification  
Inverter and interface circuits  
Circuit driver.  
R2  
bias resistor  
DESCRIPTION  
NPN/PNP resistor-equipped transistors (see “Simplified  
outline, symbol and pinning” for package details).  
PRODUCT OVERVIEW  
PACKAGE  
TYPE  
PNP/PNP  
COMPLEMENT  
NPN/NPN  
COMPLEMENT  
MARKING CODE  
NUMBER  
PHILIPS  
SOT666  
SOT457  
SOT363  
EIAJ  
PEMD2  
PIMD2  
PUMD2  
D4  
M5  
D*2(1)  
PEMB1  
PEMH1  
SC-74  
SC-88  
PUMB1  
PUMH1  
Note  
1. * = p: Made in Hong Kong.  
* = t: Made in Malaysia.  
* = W: Made in China.  
2004 Apr 21  
2
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
SIMPLIFIED OUTLINE, SYMBOL AND PINNING  
PINNING  
TYPE NUMBER  
SIMPLIFIED OUTLINE AND SYMBOL  
PIN  
DESCRIPTION  
PEMD2  
PUMD2  
1
2
3
4
5
6
emitter TR1  
base TR1  
6
5
4
6
5
4
collector TR2  
emitter TR2  
base TR2  
R1 R2  
TR2  
TR1  
R2 R1  
collector TR1  
1
Top view  
2
3
1
2
3
MAM468  
PIMD2  
1
2
3
4
5
6
emitter TR2  
base TR2  
6
5
4
handbook, halfpage  
6
5
4
collector TR1  
emitter TR1  
base TR1  
R1 R2  
TR1  
TR2  
R2 R1  
collector TR2  
1
2
3
1
2
3
Top view  
MAM476  
ORDERING INFORMATION  
TYPE NUMBER  
PACKAGE  
NAME  
DESCRIPTION  
VERSION  
PEMD2  
PIMD2  
PUMD2  
plastic surface mounted package; 6 leads  
plastic surface mounted package; 6 leads  
plastic surface mounted package; 6 leads  
SOT666  
SOT457  
SOT363  
2004 Apr 21  
3
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
MAX.  
UNIT  
Per transistor; for the PNP transistor with negative polarity  
VCBO  
VCEO  
VEBO  
VI  
collector-base voltage  
collector-emitter voltage  
emitter-base voltage  
input voltage TR1  
positive  
open emitter  
open base  
50  
V
V
V
50  
10  
open collector  
+40  
V
V
negative  
10  
VI  
input voltage TR2  
positive  
+10  
40  
100  
100  
V
V
negative  
IO  
output current (DC)  
peak collector current  
total power dissipation  
SOT363  
mA  
mA  
ICM  
Ptot  
T
amb 25 °C  
note 1  
200  
mW  
mW  
mW  
°C  
SOT457  
note 1  
300  
SOT666  
notes 1 and 2  
200  
Tstg  
Tj  
storage temperature  
junction temperature  
operating ambient temperature  
65  
+150  
150  
°C  
Tamb  
65  
+150  
°C  
Per device  
Ptot  
total power dissipation  
SOT363  
Tamb 25 °C  
note 1  
300  
600  
300  
mW  
mW  
mW  
SOT457  
note 1  
SOT666  
notes 1 and 2  
Notes  
1. Refer to standard mounting conditions.  
2. Reflow soldering is the only recommended soldering method.  
2004 Apr 21  
4
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
UNIT  
Per transistor  
Rth(j-a)  
thermal resistance from junction to ambient  
Tamb 25 °C  
SOT363  
SOT457  
SOT666  
note 1  
625  
417  
625  
K/W  
K/W  
K/W  
note 1  
notes 1 and 2  
Per device  
Rth(j-a)  
thermal resistance from junction to ambient  
Tamb 25 °C  
SOT363  
SOT457  
SOT666  
note 1  
416  
208  
416  
K/W  
K/W  
K/W  
note 1  
notes 1 and 2  
Notes  
1. Refer to standard mounting conditions.  
2. Reflow soldering is the only recommended soldering method.  
CHARACTERISTICS  
Tamb = 25 °C unless otherwise specified.  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN.  
TYP. MAX. UNIT  
Per transistor; for the PNP transistor with negative polarity  
ICBO  
ICEO  
collector-base cut-off current  
collector-emitter cut-off current  
VCB = 50 V; IE = 0 A  
100  
1
nA  
µA  
µA  
µA  
VCE = 30 V; IB = 0 A  
VCE = 30 V; IB = 0 A; Tj = 150 °C  
VEB = 5 V; IC = 0 A  
50  
IEBO  
hFE  
emitter-base cut-off current  
DC current gain  
180  
VCE = 5 V; IC = 5 mA  
60  
VCEsat  
Vi(off)  
Vi(on)  
R1  
collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA  
150  
0.8  
V
input-off voltage  
input-on voltage  
input resistor  
VCE = 5 V; IC = 100 µA  
1.1  
1.7  
22  
V
VCE = 0.3 V; IC = 5 mA  
2.5  
15.4  
V
28.6  
kΩ  
R2  
-------  
R1  
resistor ratio  
0.8  
1
1.2  
Cc  
collector capacitance  
VCB = 10 V; IE = ie = 0 A;  
f = 1 MHz  
TR1 (NPN)  
TR2 (PNP)  
2.5  
3
pF  
pF  
2004 Apr 21  
5
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
PACKAGE OUTLINES  
Plastic surface mounted package; 6 leads  
SOT666  
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index  
A
c
1
2
3
e
1
b
p
w
M
A
L
p
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6  
0.5  
0.27  
0.17  
0.18  
0.08  
1.7  
1.5  
1.3  
1.1  
1.7  
1.5  
0.3  
0.1  
mm  
1.0  
0.5  
0.1  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
01-01-04  
01-08-27  
SOT666  
2004 Apr 21  
6
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
Plastic surface mounted package; 6 leads  
SOT457  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
c
1
2
3
L
p
e
b
p
w
M B  
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
UNIT  
A
A
1
b
c
D
E
e
H
L
Q
v
w
y
p
p
E
0.1  
0.013  
0.40  
0.25  
1.1  
0.9  
0.26  
0.10  
3.1  
2.7  
1.7  
1.3  
3.0  
2.5  
0.6  
0.2  
0.33  
0.23  
mm  
0.95  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
01-05-04  
SOT457  
SC-74  
2004 Apr 21  
7
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
Plastic surface mounted package; 6 leads  
SOT363  
D
B
E
A
X
y
H
v
M
A
E
6
5
4
Q
pin 1  
index  
A
A
1
1
2
3
c
e
1
b
p
L
p
w
M B  
e
detail X  
0
1
2 mm  
scale  
DIMENSIONS (mm are the original dimensions)  
A
1
UNIT  
A
b
c
D
E
e
e
H
L
Q
v
w
y
p
p
1
E
max  
0.30  
0.20  
1.1  
0.8  
0.25  
0.10  
2.2  
1.8  
1.35  
1.15  
2.2  
2.0  
0.45  
0.15  
0.25  
0.15  
mm  
0.1  
1.3  
0.65  
0.2  
0.2  
0.1  
REFERENCES  
JEDEC  
EUROPEAN  
PROJECTION  
OUTLINE  
VERSION  
ISSUE DATE  
IEC  
EIAJ  
97-02-28  
SOT363  
SC-88  
2004 Apr 21  
8
Philips Semiconductors  
Product specification  
NPN/PNP resistor-equipped transistors;  
R1 = 22 k, R2 = 22 kΩ  
PEMD2; PIMD2; PUMD2  
DATA SHEET STATUS  
DATA SHEET  
STATUS(1)  
PRODUCT  
STATUS(2)(3)  
LEVEL  
DEFINITION  
I
Objective data  
Development This data sheet contains data from the objective specification for product  
development. Philips Semiconductors reserves the right to change the  
specification in any manner without notice.  
II  
Preliminary data Qualification  
This data sheet contains data from the preliminary specification.  
Supplementary data will be published at a later date. Philips  
Semiconductors reserves the right to change the specification without  
notice, in order to improve the design and supply the best possible  
product.  
III  
Product data  
Production  
This data sheet contains data from the product specification. Philips  
Semiconductors reserves the right to make changes at any time in order  
to improve the design, manufacturing and supply. Relevant changes will  
be communicated via a Customer Product/Process Change Notification  
(CPCN).  
Notes  
1. Please consult the most recently issued data sheet before initiating or completing a design.  
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was  
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.  
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.  
DEFINITIONS  
DISCLAIMERS  
Short-form specification  
The data in a short-form  
Life support applications  
These products are not  
specification is extracted from a full data sheet with the  
same type number and title. For detailed information see  
the relevant data sheet or data handbook.  
designed for use in life support appliances, devices, or  
systems where malfunction of these products can  
reasonably be expected to result in personal injury. Philips  
Semiconductors customers using or selling these products  
for use in such applications do so at their own risk and  
agree to fully indemnify Philips Semiconductors for any  
damages resulting from such application.  
Limiting values definition Limiting values given are in  
accordance with the Absolute Maximum Rating System  
(IEC 60134). Stress above one or more of the limiting  
values may cause permanent damage to the device.  
These are stress ratings only and operation of the device  
at these or at any other conditions above those given in the  
Characteristics sections of the specification is not implied.  
Exposure to limiting values for extended periods may  
affect device reliability.  
Right to make changes  
Philips Semiconductors  
reserves the right to make changes in the products -  
including circuits, standard cells, and/or software -  
described or contained herein in order to improve design  
and/or performance. When the product is in full production  
(status ‘Production’), relevant changes will be  
Application information  
Applications that are  
communicated via a Customer Product/Process Change  
Notification (CPCN). Philips Semiconductors assumes no  
responsibility or liability for the use of any of these  
products, conveys no licence or title under any patent,  
copyright, or mask work right to these products, and  
makes no representations or warranties that these  
products are free from patent, copyright, or mask work  
right infringement, unless otherwise specified.  
described herein for any of these products are for  
illustrative purposes only. Philips Semiconductors make  
no representation or warranty that such applications will be  
suitable for the specified use without further testing or  
modification.  
2004 Apr 21  
9
Philips Semiconductors – a worldwide company  
Contact information  
For additional information please visit http://www.semiconductors.philips.com.  
Fax: +31 40 27 24825  
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.  
© Koninklijke Philips Electronics N.V. 2004  
SCA76  
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.  
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed  
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license  
under patent- or other industrial or intellectual property rights.  
Printed in The Netherlands  
R75/06/pp10  
Date of release: 2004 Apr 21  
Document order number: 9397 750 13096  

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