PEMZ7,115 [NXP]
PEMZ7 - NPN/PNP general purpose transistors SOT 6-Pin;
| 型号： | PEMZ7,115 |
| 厂家： | 
NXP |
| 描述： | PEMZ7 - NPN/PNP general purpose transistors SOT 6-Pin 开关 光电二极管 晶体管 |
| 文件： | 总9页 (文件大小：84K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PEMZ7
NPN/PNP general purpose
transistors
Product data sheet
2001 Nov 07
Supersedes data of 2001 Sep 25
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
FEATURES
PINNING
• 300 mW total power dissipation
• Very small 1.6 × 1.2 mm ultra thin package
• Self alignment during soldering due to straight leads
• Low collector capacitance
PIN
1, 4
2, 5
6, 3
DESCRIPTION
emitter
base
TR1; TR2
TR1; TR2
TR1; TR2
collector
• Low VCEsat
• High current capabilities
• Improved thermal behaviour due to flat leads
• Reduced required PCB area
handbook, halfpage
• Reduced pick and place costs.
6
5
2
4
6
5
4
APPLICATIONS
TR2
• Heavy duty battery powered equipment (automotive,
telecom and audio-video) such as motor and lamp
drivers
TR1
1
2
3
1
3
• VCEsat critical applications such as latest low supply
voltage IC applications
MAM456
Top view
• All battery driven equipment, to save battery power.
DESCRIPTION
Fig.1 Simplified outline (SOT666) and symbol.
NPN/PNP low VCEsat transistor pair in a SOT666 plastic
package.
MARKING
TYPE NUMBER
PEMZ7
MARKING CODE
Z7
2001 Nov 07
2
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per transistor; for the PNP transistor with negative polarity
VCBO
VCEO
VEBO
IC
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
open emitter
open base
−
−
−
−
−
−
−
15
V
V
V
12
open collector
6
500
1
mA
A
ICM
IBM
100
200
+150
150
+150
mA
mW
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
operating ambient temperature
Tamb ≤ 25 °C; note 1
−65
−
°C
Tamb
−65
°C
Per device
Ptot
total power dissipation
Tamb ≤ 25 °C; note 1
−
300
mW
Note
1. Transistor mounted on an FR4 printed-circuit board.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
notes 1 and 2
VALUE
UNIT
Rth j-a
thermal resistance from junction to
ambient
416
K/W
Notes
1. Transistor mounted on an FR4 printed-circuit board.
2. The only recommended soldering method is reflow soldering.
2001 Nov 07
3
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Per transistor; for the PNP transistor with negative polarity
ICBO
collector-base cut-off current
VCB = 15 V; IE = 0
−
−
−
−
−
−
100
50
nA
μA
nA
VCB = 15 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
−
IEBO
hFE
emitter-base cut-off current
DC current gain
−
100
−
VCE = 2 V; IC = 10 mA
IC = 200 mA; IB = 10 mA
200
−
VCEsat
collector-emitter saturation
voltage
220
mV
fT
transition frequency
TR1 (NPN)
IC = 100 mA; VCE = 5 V;
f = 100 MHz
250
100
420
280
−
−
MHz
MHz
TR2 (PNP)
Cc
collector capacitance
TR1 (NPN)
VCB = 10 V; IE = Ie = 0; f = 1 MHz
−
−
4.4
6
pF
pF
TR2 (PNP)
−
10
MLD672
MHC014
600
1200
handbook, halfpage
handbook, halfpage
h
(1)
FE
(3)
(2)
(4)
(1)
I
C
500
(mA)
(5)
(6)
800
400
300
200
100
0
(2)
(3)
(7)
(8)
400
(9)
(10)
0
−1
2
3
10
1
10
10
10
0
2
4
6
8
10
(V)
I
(mA)
V
C
CE
TR1 (NPN); Tamb = 25 °C.
(1) B = 4.60 mA
I
(5) IB = 2.76 mA
(6) IB = 2.30 mA
(7) IB = 1.84 mA
(8) IB = 1.38 mA
(9) IB = 0.92 mA
(10) IB = 0.46 mA
TR1 (NPN); VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(2) IB = 4.14 mA
(3) IB = 3.68 mA
(4) IB = 3.22 mA
(3) Tamb = −55 °C.
Fig.2 DC current gain as a function of collector
current; typical values.
Fig.3 Collector current as a function of
collector-emitter voltage; typical values.
2001 Nov 07
4
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
MLD673
MHC017
1200
1200
handbook, halfpage
handbook, halfpage
V
V
BEsat
(mV)
BE
(mV)
1000
1000
(1)
(1)
(2)
800
800
600
(2)
600
(3)
(3)
400
400
200
200
10
−1
2
3
−1
2
3
1
10
10
10
10
1
10
10
10
I
(mA)
I
(mA)
C
C
TR1 (NPN); VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
(3) Tamb = 150 °C.
Fig.4 Base-emitter voltage as a function of
collector current; typical values.
Fig.5 Base-emitter saturation voltage as a
function of collector current; typical values.
MHC018
MHC019
3
10
600
handbook, halfpage
handbook, halfpage
h
FE
V
CEsat
(1)
500
(mV)
2
10
400
300
200
100
0
(2)
(3)
(1)
10
(2)
(3)
1
10
−1
2
3
−1
2
3
1
10
10
10
−10
−1
−10
−10
−10
I
(mA)
I
(mA)
C
C
TR1 (NPN); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR2 (PNP); VCE = −2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.6 Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.7 DC current gain as a function of collector
current; typical values.
2001 Nov 07
5
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
MLD650
MLD667
−1200
−1200
handbook, halfpage
handbook, halfpage
V
BE
(3)
(2)
(4)
(1)
I
(mV)
C
(mA)
−1000
(5)
(6)
(1)
(2)
−800
−800
−600
(7)
(8)
(9)
−400
(3)
(10)
−400
−200
0
−1
2
3
−10
−1
−10
−10
−10
(mA)
0
−2
−4
−6
−8
−10
(V)
I
C
V
CE
TR2 (PNP); Tamb = 25 °C.
(1) IB = 7.0 mA
(2) IB = 6.3 mA
(3) IB = 5.6 mA
(4) IB = 4.9 mA
(5)
I
B = 4.2 mA
(9)
I
B = 1.4 mA
TR2 (PNP); VCE = −2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(6) IB = 3.5 mA
(7) IB = 2.8 mA
(8) IB = 2.1 mA
(10) IB = 0.7 mA
(3) Tamb = 150 °C.
Fig.8 Collector current as a function of
collector-emitter voltage; typical values.
Fig.9 Base-emitter voltage as a function of
collector current; typical values.
MHC022
MHC023
3
−10
−1200
handbook, halfpage
handbook, halfpage
V
BEsat
V
(mV)
CEsat
(mV)
−1000
2
(1)
−10
(1)
−800
(2)
(3)
(2)
−600
−10
−1
(3)
−400
−200
−1
2
3
−1
2
3
−10
−1
−10
−10
−10
−10
−1
−10
−10
−10
I
(mA)
I
(mA)
C
C
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
TR2 (PNP); IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3)
T
amb = −55 °C.
(3) Tamb = −55 °C.
Fig.10 Base-emitter saturation voltage as a
function of collector current; typical values.
Fig.11 Collector-emitter saturation voltage as a
function of collector current; typical values.
2001 Nov 07
6
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
PACKAGE OUTLINE
Plastic surface mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
01-01-04
01-08-27
SOT666
2001 Nov 07
7
NXP Semiconductors
Product data sheet
NPN/PNP general purpose transistors
PEMZ7
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
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may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
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Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2001 Nov 07
8
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were
made to the content, except for the legal definitions and disclaimers.
Contact information
For additional information please visit: http://www.nxp.com
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© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp9
Date of release: 2001 Nov 07
Document order number: 9397 750 09054
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