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PESD12VS4UD [NXP]

Quadruple ESD protection diode arrays in a SOT457 package; 在SOT457封装四倍的ESD保护二极管阵列
PESD12VS4UD
型号： PESD12VS4UD
厂家： NXP    NXP
描述：

Quadruple ESD protection diode arrays in a SOT457 package
在SOT457封装四倍的ESD保护二极管阵列

瞬态抑制器 二极管 光电二极管 局域网
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PESDxS4UD series  
Quadruple ESD protection diode arrays in a SOT457 package  
Rev. 02 — 21 August 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Quadruple ElectroStatic Discharge (ESD) protection diode arrays in a SOT457 (SC-74)  
small Surface-Mounted Device (SMD) plastic package designed to protect up to 4 signal  
lines from the damage caused by ESD and other transients.  
1.2 Features  
I ESD protection of up to 4 lines  
I Max. peak pulse power: PPP = 200 W  
I ESD protection up to 30 kV  
I IEC 61000-4-2; level 4 (ESD)  
I Ultra low leakage current: IRM = 50 pA I IEC 61000-4-5; (surge); IPP up to 20 A  
I Low clamping voltage: VCL = 12 V at  
IPP = 20 A  
1.3 Applications  
I Computers and peripherals  
I Communication systems  
I Portable electronics  
I Audio and video equipment  
I Cellular handsets and accessories  
I Subscriber Identity Module (SIM) card  
protection  
1.4 Quick reference data  
Table 1.  
Symbol  
Per diode  
VRWM  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
reverse standoff voltage  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
-
-
-
-
-
-
-
-
-
-
3.3  
5
V
V
V
V
V
12  
15  
24  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
Table 1.  
Quick reference data …continued  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max Unit  
Cd  
diode capacitance  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
f = 1 MHz; VR = 0 V  
-
-
-
-
-
215  
165  
73  
300  
220  
100  
90  
pF  
pF  
pF  
pF  
pF  
60  
45  
70  
2. Pinning information  
Table 2.  
Pinning  
Pin  
1
Description  
cathode 1  
Simplified outline  
Symbol  
6
5
4
2
common anode  
cathode 2  
1
2
3
6
5
4
3
4
cathode 3  
1
2
3
5
common anode  
cathode 4  
006aaa156  
6
3. Ordering information  
Table 3.  
Ordering information  
Type number  
Package  
Name  
Description  
Version  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
SC-74  
plastic surface-mounted package (TSOP6);  
6 leads  
SOT457  
4. Marking  
Table 4.  
Marking codes  
Type number  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
Marking code  
K4  
K5  
K6  
K7  
K8  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
2 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
5. Limiting values  
Table 5.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
PPP  
Parameter  
Conditions  
tp = 8/20 µs  
tp = 8/20 µs  
Min  
Max  
Unit  
[1][2]  
[1][2]  
peak pulse power  
peak pulse current  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
junction temperature  
ambient temperature  
storage temperature  
-
200  
W
IPP  
-
20  
A
-
20  
A
-
10  
A
-
6
A
-
4
A
Tj  
-
150  
+150  
+150  
°C  
°C  
°C  
Tamb  
Tstg  
−65  
−65  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[2] Measured from pin 1, 3, 4 or 6 to 2 or 5  
Table 6.  
Symbol Parameter  
VESD electrostatic discharge voltage  
ESD maximum ratings  
Conditions  
Min  
Max  
Unit  
[1][2]  
IEC 61000-4-2  
(contact discharge)  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
PESDxS4UD series  
-
-
-
-
-
-
30  
30  
30  
30  
23  
10  
kV  
kV  
kV  
kV  
kV  
kV  
HBM MIL-STD-883  
[1] Device stressed with ten non-repetitive ESD pulses.  
[2] Measured from pin 1, 3, 4 or 6 to 2 or 5  
Table 7.  
ESD standards compliance  
Standard  
Conditions  
IEC 61000-4-2; level 4 (ESD)  
HBM MIL-STD-883; class 3  
> 15 kV (air); > 8 kV (contact)  
> 10 kV  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
3 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
001aaa631  
I
PP  
001aaa630  
120  
100 %  
90 %  
100 % I ; 8 µs  
PP  
I
PP  
(%)  
80  
−t  
e
50 % I ; 20 µs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (µs)  
Fig 1. 8/20 µs pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
6. Characteristics  
Table 8.  
Characteristics  
Tamb = 25 °C unless otherwise specified  
Symbol Parameter  
Per diode  
Conditions  
Min  
Typ  
Max Unit  
VRWM  
reverse standoff voltage  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
reverse leakage current  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
breakdown voltage  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
-
-
-
-
-
-
-
-
-
-
3.3  
5
V
V
V
V
V
12  
15  
24  
IRM  
VRWM = 3.3 V  
VRWM = 5 V  
VRWM = 12 V  
VRWM = 15 V  
VRWM = 24 V  
IR = 1 mA  
-
-
-
-
-
300  
80  
800  
200  
nA  
nA  
nA  
nA  
nA  
0.05 15  
0.05 15  
0.05 15  
VBR  
5.3  
6.4  
5.6  
6.8  
5.9  
7.2  
V
V
V
V
V
12.5 14.5 16  
15.5 18  
25.5 27  
20.5  
29  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
4 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
Table 8.  
Characteristics …continued  
Tamb = 25 °C unless otherwise specified  
Symbol Parameter  
Conditions  
Min  
Typ  
Max Unit  
Cd  
diode capacitance  
PESD3V3S4UD  
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
clamping voltage  
PESD3V3S4UD  
f = 1 MHz; VR = 0 V  
-
-
-
-
-
215  
165  
73  
300  
220  
100  
90  
pF  
pF  
pF  
pF  
pF  
60  
45  
70  
[1][2]  
VCL  
IPP = 1 A  
IPP = 20 A  
IPP = 1 A  
IPP = 20 A  
IPP = 1 A  
IPP = 10 A  
IPP = 1 A  
IPP = 6 A  
IPP = 1 A  
IPP = 4 A  
IR = 5 mA  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
8
V
V
V
V
V
V
V
V
V
V
Ω
12  
8
PESD5V0S4UD  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
differential resistance  
13  
17  
24  
22  
33  
33  
52  
25  
rdif  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[2] Measured from pin 1, 3, 4 or 6 to 2 or 5  
006aaa698  
001aaa633  
4
3
2
10  
1.2  
P
PP  
(W)  
P
PP  
P
PP(25°C)  
10  
0.8  
10  
0.4  
10  
1
0
2
3
4
1
10  
10  
10  
10  
0
50  
100  
150  
200  
t
(µs)  
T (°C)  
j
p
Tamb = 25 °C  
Fig 3. Peak pulse power as a function of exponential  
pulse duration; typical values  
Fig 4. Relative variation of peak pulse power as a  
function of junction temperature; typical  
values  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
5 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
006aaa700  
006aaa701  
220  
80  
C
d
C
d
(pF)  
(pF)  
180  
60  
140  
100  
60  
40  
20  
0
(1)  
(2)  
(1)  
(2)  
(3)  
0
1
2
3
4
5
0
5
10  
15  
20  
25  
V
(V)  
V (V)  
R
R
f = 1 MHz; Tamb = 25 °C  
f = 1 MHz; Tamb = 25 °C  
(1) PESD3V3S4UD  
(2) PESD5V0S4UD  
(1) PESD12VS4UD  
(2) PESD15VS4UD  
(3) PESD24VS4UD  
Fig 5. Diode capacitance as a function of reverse  
voltage; typical values  
Fig 6. Diode capacitance as a function of reverse  
voltage; typical values  
I
006aaa699  
10  
I
RM  
I
RM(25°C)  
−V  
−V  
−V  
V
CL  
BR  
RWM  
−I  
−I  
RM  
R
1
−
+
P-N  
−1  
−I  
10  
PP  
−100  
−50  
0
50  
100  
150  
T (°C)  
j
006aaa407  
PESD3V3S4UD  
PESD5V0S4UD  
IR is less than 5 nA at 150 °C  
PESD12VS4UD  
PESD15VS4UD  
PESD24VS4UD  
Fig 7. Relative variation of reverse leakage current  
as a function of junction temperature; typical  
values  
Fig 8. V-I characteristics for a unidirectional ESD  
protection diode  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
6 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
ESD TESTER  
4 GHz DIGITAL  
RG 223/U  
50 Ω coax  
OSCILLOSCOPE  
R
d
450 Ω  
10×  
ATTENUATOR  
C
s
50 Ω  
DUT  
(DEVICE  
UNDER  
TEST)  
IEC 61000-4-2 network  
= 150 pF; R = 330 Ω  
C
s
d
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
vertical scale = 20 V/div  
horizontal scale = 50 ns/div  
PESD24VS4UD  
GND  
GND  
GND  
GND  
GND  
PESD15VS4UD  
PESD12VS4UD  
PESD5V0S4UD  
PESD3V3S4UD  
GND  
unclamped +1 kV ESD voltage waveform  
clamped +1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
(IEC 61000-4-2 network)  
GND  
GND  
vertical scale = 200 V/div  
horizontal scale = 50 ns/div  
vertical scale = 10 V/div  
horizontal scale = 50 ns/div  
unclamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
clamped −1 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
006aaa761  
Fig 9. ESD clamping test setup and waveforms  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
7 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
7. Application information  
The PESDxS4UD series is designed for protection of up to 4 unidirectional data lines from  
the damage caused by ESD and surge pulses. The PESDxS4UD series may be used on  
lines where the signal polarities are above or below ground. The PESDxS4UD series  
provides a surge capability of 200 W per line for an 8/20 µs waveform.  
data- or transmission lines  
1
2
3
6
5
4
1
2
3
6
5
4
n.c.  
n.c.  
unidirectional protection of 4 lines  
bidirectional protection of 3 lines  
006aaa762  
Fig 10. Application diagram  
Circuit board layout and protection device placement  
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT)  
and surge transients. The following guidelines are recommended:  
1. Place the PESDxS4UD as close to the input terminal or connector as possible.  
2. The path length between the PESDxS4UD and the protected line should be  
minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground  
vias.  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
8 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
8. Package outline  
3.1  
2.7  
1.1  
0.9  
6
5
4
0.6  
0.2  
3.0 1.7  
2.5 1.3  
pin 1 index  
1
2
3
0.26  
0.10  
0.40  
0.25  
0.95  
1.9  
Dimensions in mm  
04-11-08  
Fig 11. Package outline SOT457 (SC-74)  
9. Packing information  
Table 9.  
Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
10000  
-135  
-165  
-135  
-165  
-135  
-165  
-135  
-165  
-135  
-165  
[2]  
[3]  
[2]  
[3]  
[2]  
[3]  
[2]  
[3]  
[2]  
[3]  
PESD3V3S4UD SOT457  
PESD5V0S4UD SOT457  
PESD12VS4UD SOT457  
PESD15VS4UD SOT457  
PESD24VS4UD SOT457  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
4 mm pitch, 8 mm tape and reel; T1  
4 mm pitch, 8 mm tape and reel; T2  
-115  
-125  
-115  
-125  
-115  
-125  
-115  
-125  
-115  
-125  
[1] For further information and the availability of packing methods, see Section 12.  
[2] T1: normal taping  
[3] T2: reverse taping  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
9 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
10. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20090821  
Data sheet status  
Change notice  
Supersedes  
PESDXS4UD_SER_2  
Modifications:  
Product data sheet  
-
PESDXS4UD_SER_1  
• This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
PESDXS4UD_SER_1  
20060704  
Product data sheet  
-
-
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
10 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
11. Legal information  
11.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
11.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
11.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
11.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
12. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PESDXS4UD_SER_2  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 02 — 21 August 2009  
11 of 12  
PESDxS4UD series  
NXP Semiconductors  
Quadruple ESD protection diode arrays in a SOT457 package  
13. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Application information. . . . . . . . . . . . . . . . . . . 8  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Packing information. . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10  
3
4
5
6
7
8
9
10  
11  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 11  
11.1  
11.2  
11.3  
11.4  
12  
13  
Contact information. . . . . . . . . . . . . . . . . . . . . 11  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 21 August 2009  
Document identifier: PESDXS4UD_SER_2  

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