PESD24VS2UQT/R_技术文档

PESDxS2UQ series

Double ESD protection diodes in SOT663 package

Rev. 03 — 11 September 2008

Product data sheet

IMPORTANT NOTICE

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- NXP Semiconductors, which will be used in future data sheets together with new contact

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NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

FEATURES

QUICK REFERENCE DATA

• Uni-directional ESD protection of up to two lines

• Max. peak pulse power: P_pp= 150 W at t_p= 8/20 µs

• Low clamping voltage: V_(CL)R= 20 V at I_pp= 15 A

• Low reverse leakage current: I_RM< 1 nA

• ESD protection > 30 kV

SYMBOL

PARAMETER

VALUE

UNIT

V_RWM

reverse stand-off

voltage

3.3, 5, 12, 15

and 24

V

C_d

diode capacitance 200, 150, 38, 32 pF

V_R= 0 V;

f = 1 MHz

and 23

• IEC 61000-4-2; level 4 (ESD)

number of

protected lines

2

• IEC 61000-4-5 (surge); I_pp= 15 A at t_p= 8/20 µs.

APPLICATIONS

PINNING

• Computers and peripherals

• Communication systems

• Audio and video equipment

• High speed data lines

• Parallel ports.

DESCRIPTION

1

2

3

cathode 1

cathode 2

common anode

DESCRIPTION

Uni-directional double ESD protection diodes in a SOT663

plastic package. Designed to protect up to two

transmission or data lines from ElectroStatic Discharge

(ESD) damage.

3

1

2

3

MARKING

TYPE NUMBER

PESD3V3S2UQ

MARKING CODE

1

2

E1

E2

E3

E4

E5

sym022

001aaa732

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

Fig.1 Simplified outline (SOT663) and symbol.

Rev. 03 - 11 September 2008

2 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

ORDERING INFORMATION

PACKAGE

TYPE NUMBER

NAME

DESCRIPTION

VERSION

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

−

plastic surface mounted package; 3 leads

SOT663

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL

P_pp

PARAMETER

peak pulse power

CONDITIONS

MIN.

MAX.

150

UNIT

8/20 µs pulse; notes 1 and 2

−

W

I_pp

peak pulse current

PESD3V3S2UQ

−

15

A

PESD5V0S2UQ

15

A

PESD12VS2UQ

5

A

PESD15VS2UQ

5

A

PESD24VS2UQ

3

A

T_j

junction temperature

operating ambient temperature

storage temperature

150

+150

°C

T_amb

T_stg

−65

Notes

1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2.

2. Measured across either pins 1 and 3 or pins 2 and 3.

Rev. 03 - 11 September 2008

3 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

ESD maximum ratings

SYMBOL

ESD

PARAMETER

CONDITIONS

VALUE

UNIT

electrostatic discharge

capability

IEC 61000-4-2 (contact discharge);

notes 1 and 2

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

HBM MIL-Std 883

PESDxS2UQ series

30

23

kV

10

kV

Notes

1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.

2. Measured across either pins 1 and 3 or pins 2 and 3.

ESD standards compliance

ESD STANDARD

CONDITIONS

>15 kV (air); > 8 kV (contact)

>4 kV

IEC 61000-4-2; level 4 (ESD); see Fig.3

HBM MIL-Std 883; class 3

001aaa191

MLE218

I

pp

120

handbook, halfpage

100 %

90 %

I

pp

100 % I ; 8 µs

pp

(%)

80

−t

e

50 % I ; 20 µs

pp

40

10 %

t

0

t = 0.7 to 1 ns

r

0

10

20

30

40

30 ns

t (µs)

60 ns

Fig.2 8/20 µs pulse waveform according to

Fig.3 ElectroStatic Discharge (ESD) pulse

waveform according to IEC 61000-4-2.

IEC 61000-4-5.

Rev. 03 - 11 September 2008

4 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

ELECTRICAL CHARACTERISTICS

T_j= 25 °C unless otherwise speciﬁed.

SYMBOL

V_RWM

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

reverse stand-off voltage

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

reverse leakage current

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

breakdown voltage

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

diode capacitance

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

clamping voltage

PESD3V3S2UQ

−

3.3

V

5

12

15

24

I_RM

V_RWM= 3.3 V

−

0.55

50

3

µA

nA

V_RWM= 5 V

V_RWM= 12 V

V_RWM= 15 V

V_RWM= 24 V

I_Z= 5 mA

300

30

50

<1

V_BR

5.2

5.6

6.0

V

6.4

6.8

7.2

14.7

17.6

26.5

15.0

18.0

27.0

15.3

18.4

27.5

C_d

f = 1 MHz; V_R= 0 V

−

200

150

38

275

215

100

70

pF

32

23

50

V_(CL)R

notes 1 and 2

I_pp= 1 A

I_pp= 15 A

I_pp= 1 A

I_pp= 15 A

I_pp= 1 A

I_pp= 5 A

I_pp= 1 A

I_pp= 5 A

I_pp= 1 A

I_pp= 3 A

−

8

V

20

9

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

20

19

35

23

40

36

70

Rev. 03 - 11 September 2008

5 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

SYMBOL

R_diff

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

differential resistance

PESD3V3S2UQ

PESD5V0S2UQ

PESD12VS2UQ

PESD15VS2UQ

PESD24VS2UQ

I_R= 5 mA

−

40

Ω

I_R= 5 mA

I_R= 1 mA

I_R= 0.5 mA

15

Ω

15

225

300

Notes

1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.

2. Measured either across pins 1 and 3 or pins 2 and 3.

GRAPHICAL DATA

001aaa726

001aaa193

4

10

1.2

P

pp

P

pp

(W)

P

pp(25˚C)

3

10

0.8

2

10

0.4

10

0

2

3

1

10

0

50

100

150

200

t

(µs)

T (°C)

j

p

T_amb= 25 °C.

t_p= 8/20 µs exponential decaying waveform; see Fig.2.

Fig.5 Relative variation of peak pulse power as a

function of junction temperature; typical

values.

Fig.4 Peak pulse power dissipation as a function

of pulse time; typical values.

Rev. 03 - 11 September 2008

6 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

001aaa727

001aaa728

240

50

C

d

C

d

(pF)

200

(pF)

40

160

120

80

30

20

10

0

(1)

(2)

(1)

(2)

(3)

40

0

1

2

3

4

5

0

5

10

15

20

25

V

R

(V)

V (V)

R

(1) PESD12VS2UQ; V_RWM= 12 V.

(2) PESD15VS2UQ; V_RWM= 15 V.

(3) PESD24VS2UQ; V_RWM= 24 V.

(1) PESD3V3S2UQ; V_RWM= 3.3 V.

(2) PESD5V0S2UQ; V_RWM= 5 V.

T_amb= 25 °C; f = 1 MHz.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

Fig.7 Diode capacitance as a function of reverse

voltage; typical values.

Rev. 03 - 11 September 2008

7 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

001aaa729

10

I

R

I

R(25°C)

(1)

(2)

1

−1

10

−100

−50

0

50

100

150

T (°C)

j

(1) PESD3V3S2UQ; V_RWM= 3.3 V.

(2) PESD5V0S2UQ; V_RWM= 5 V.

I_Ris less than 15 nA at 150 °C for:

PESD12VS2UQ; V_RWM= 12 V.

PESD15VS2UQ; V_RWM= 15 V.

PESD24VS2UQ; V_RWM= 24 V.

Fig.8 Relative variation of reverse leakage

current as a function of junction

temperature; typical values.

Rev. 03 - 11 September 2008

8 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

ESD TESTER

RG 223/U

50 Ω coax

4 GHz DIGITAL

OSCILLOSCOPE

R

Z

450 Ω

10×

ATTENUATOR

C

Z

50 Ω

note 1

Note 1: IEC61000-4-2 network

= 150 pF; R = 330 Ω

C

Z

D.U.T.: PESDxS2UQ

vertical scale = 200 V/div

horizontal scale = 50 ns/div

vertical scale = 20 V/div

horizontal scale = 50 ns/div

PESD24VS2UQ

GND

PESD15VS2UQ

PESD12VS2UQ

PESD5V2S2UQ

PESD3V3S2UQ

GND

unclamped +1 kV ESD voltage waveform

clamped +1 kV ESD voltage waveform

(IEC61000-4-2 network)

GND

vertical scale = 10 V/div

horizontal scale = 50 ns/div

vertical scale = 200 V/div

horizontal scale = 50 ns/div

unclamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

clamped −1 kV ESD voltage waveform

(IEC61000-4-2 network)

001aaa731

Fig.9 ESD clamping test set-up and waveforms.

Rev. 03 - 11 September 2008

9 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

APPLICATION INFORMATION

The PESDxS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by

ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UQ series may be used on lines where the signal

polarities are below ground. PESDxS2UQ series provide a surge capability of up to 150 W (P_pp) per line for an 8/20 µs

waveform.

line 1 to be protected

line 2 to be protected

line 1 to be protected

PESDxS2UQ

ground

PESDxS2UQ

ground

uni-directional protection

of two lines

bi-directional protection

of one line

001aaa730

Fig.10 Typical application: ESD protection of data lines.

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The

following guidelines are recommended:

• Place the PESDxS2UQ as close as possible to the input terminal or connector.

• The path length between the PESDxS2UQ and the protected line should be minimized.

• Keep parallel signal paths to a minimum.

• Avoid running protected conductors in parallel with unprotected conductors.

• Minimize all printed-circuit board conductive loops including power and ground loops.

• Minimize the length of transient return paths to ground.

• Avoid using shared return paths to a common ground point.

• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.

Rev. 03 - 11 September 2008

10 of 13

NXP Semiconductors

Product speciﬁcation

Double ESD protection diodes

in SOT663 package

PESDxS2UQ series

PACKAGE OUTLINE

Plastic surface mounted package; 3 leads

SOT663

D

B

E

X

Y

H

E

3

A

c

1

2

e

1

b

p

w M

B

L

p

e

detail X

0

1

2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

b

p

c

D

E

e

H

L

w

y

A

p

1

E

0.6

0.5

0.33

0.23

0.18

0.08

1.7

1.5

1.3

1.1

1.7

1.5

0.3

0.1

mm

1.0

0.5

0.1

REFERENCES

JEDEC JEITA

EUROPEAN

PROJECTION

OUTLINE

VERSION

ISSUE DATE

IEC

01-12-04

02-05-21

SOT663

Rev. 03 - 11 September 2008

11 of 13

PESDxS2UQ series

NXP Semiconductors

Double ESD protection diodes in SOT663 package

Legal information

Data sheet status

Document status^[1][2]

Product status^[3]

Development

Deﬁnition

Objective [short] data sheet

This document contains data from the objective speciﬁcation for product development.

This document contains data from the preliminary speciﬁcation.

This document contains the product speciﬁcation.

Preliminary [short] data sheet Qualiﬁcation

Product [short] data sheet Production

[1]

[2]

[3]

Please consult the most recently issued document before initiating or completing a design.

The term ‘short data sheet’ is explained in section “Deﬁnitions”.

The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status

information is available on the Internet at URL http://www.nxp.com.

damage. NXP Semiconductors accepts no liability for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Deﬁnitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modiﬁcations or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liability for the consequences of

use of such information.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

speciﬁed use without further testing or modiﬁcation.

Limiting values — Stress above one or more limiting values (as deﬁned in

the Absolute Maximum Ratings System of IEC 60134) may cause permanent

damage to the device. Limiting values are stress ratings only and operation of

the device at these or any other conditions above those given in the

Characteristics sections of this document is not implied. Exposure to limiting

values for extended periods may affect device reliability.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and title. A short data sheet is intended

for quick reference only and should not be relied upon to contain detailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

ofﬁce. In case of any inconsistency or conﬂict with the short data sheet, the

full data sheet shall prevail.

Terms and conditions of sale — NXP Semiconductors products are sold

subject to the general terms and conditions of commercial sale, as published

at http://www.nxp.com/proﬁle/terms, including those pertaining to warranty,

intellectual property rights infringement and limitation of liability, unless

explicitly otherwise agreed to in writing by NXP Semiconductors. In case of

any inconsistency or conﬂict between information in this document and such

terms and conditions, the latter will prevail.

Disclaimers

General — Information in this document is believed to be accurate and

reliable. However, NXP Semiconductors does not give any representations or

warranties, expressed or implied, as to the accuracy or completeness of such

information and shall have no liability for the consequences of use of such

information.

No offer to sell or license — Nothing in this document may be interpreted

or construed as an offer to sell products that is open for acceptance or the

grant, conveyance or implication of any license under any copyrights, patents

or other industrial or intellectual property rights.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation speciﬁcations and product descriptions, at any time and without

notice. This document supersedes and replaces all information supplied prior

to the publication hereof.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in personal injury, death or severe property or environmental

Trademarks

Notice: All referenced brands, product names, service names and trademarks

are the property of their respective owners.

Contact information

For more information, please visit: http://www.nxp.com

For sales ofﬁce addresses, please send an email to: salesaddresses@nxp.com

Rev. 03 - 11 September 2008

12 of 13

PESDxS2UQ series

NXP Semiconductors

Double ESD protection diodes in SOT663 package

Revision history

Table 1.

Document ID

PESDXS2UQ_SER_N_3 20080911

Modiﬁcations:

Revision history

Release date

Data sheet status

Change notice

Supersedes

Product data sheet

-

PESDXS2UQ_SERIES_2

• Asterisks and note 1 removed in Marking Table

PESDXS2UQ_SERIES_2 20040427

PESDXS2UQ_SERIES_1 20031215

Product speciﬁcation

-

PESDXS2UQ_SERIES_1

-

Product speciﬁcation

-

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 11 September 2008

Document identifier: PESDXS2UQ_SER_N_3


型号：	PESD24VS2UQT/R
厂家：	NXP
描述：	TRANSIENT SUPPRESSOR DIODE,DUAL,UNIDIRECTIONAL,CENTER-TAPPED,24V V(RWM),SOT-663 二极管
文件：	总13页 (文件大小：296K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

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