PESD3V3S2UQT/R [NXP]
TRANSIENT SUPPRESSOR DIODE,DUAL,UNIDIRECTIONAL,CENTER-TAPPED,3.3V V(RWM),SOT-663;型号: | PESD3V3S2UQT/R |
厂家: | NXP |
描述: | TRANSIENT SUPPRESSOR DIODE,DUAL,UNIDIRECTIONAL,CENTER-TAPPED,3.3V V(RWM),SOT-663 二极管 |
文件: | 总13页 (文件大小:296K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PESDxS2UQ series
Double ESD protection diodes in SOT663 package
Rev. 03 — 11 September 2008
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
- © NXP B.V. (year). All rights reserved. -
If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
FEATURES
QUICK REFERENCE DATA
• Uni-directional ESD protection of up to two lines
• Max. peak pulse power: Ppp = 150 W at tp = 8/20 µs
• Low clamping voltage: V(CL)R = 20 V at Ipp = 15 A
• Low reverse leakage current: IRM < 1 nA
• ESD protection > 30 kV
SYMBOL
PARAMETER
VALUE
UNIT
VRWM
reverse stand-off
voltage
3.3, 5, 12, 15
and 24
V
Cd
diode capacitance 200, 150, 38, 32 pF
VR = 0 V;
f = 1 MHz
and 23
• IEC 61000-4-2; level 4 (ESD)
number of
protected lines
2
• IEC 61000-4-5 (surge); Ipp = 15 A at tp = 8/20 µs.
APPLICATIONS
PINNING
PIN
• Computers and peripherals
• Communication systems
• Audio and video equipment
• High speed data lines
• Parallel ports.
DESCRIPTION
1
2
3
cathode 1
cathode 2
common anode
DESCRIPTION
Uni-directional double ESD protection diodes in a SOT663
plastic package. Designed to protect up to two
transmission or data lines from ElectroStatic Discharge
(ESD) damage.
3
1
2
3
MARKING
TYPE NUMBER
PESD3V3S2UQ
MARKING CODE
1
2
E1
E2
E3
E4
E5
sym022
001aaa732
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
Fig.1 Simplified outline (SOT663) and symbol.
Rev. 03 - 11 September 2008
2 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
−
plastic surface mounted package; 3 leads
SOT663
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Ppp
PARAMETER
peak pulse power
CONDITIONS
MIN.
MAX.
150
UNIT
8/20 µs pulse; notes 1 and 2
8/20 µs pulse; notes 1 and 2
−
W
Ipp
peak pulse current
PESD3V3S2UQ
−
−
−
−
−
−
15
A
PESD5V0S2UQ
15
A
PESD12VS2UQ
5
A
PESD15VS2UQ
5
A
PESD24VS2UQ
3
A
Tj
junction temperature
operating ambient temperature
storage temperature
150
+150
+150
°C
°C
°C
Tamb
Tstg
−65
−65
Notes
1. Non-repetitive current pulse 8/20 µs exponential decaying waveform; see Fig.2.
2. Measured across either pins 1 and 3 or pins 2 and 3.
Rev. 03 - 11 September 2008
3 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
ESD maximum ratings
SYMBOL
ESD
PARAMETER
CONDITIONS
VALUE
UNIT
electrostatic discharge
capability
IEC 61000-4-2 (contact discharge);
notes 1 and 2
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
HBM MIL-Std 883
PESDxS2UQ series
30
30
30
30
23
kV
kV
kV
kV
kV
10
kV
Notes
1. Device stressed with ten non-repetitive ElectroStatic Discharge (ESD) pulses; see Fig.3.
2. Measured across either pins 1 and 3 or pins 2 and 3.
ESD standards compliance
ESD STANDARD
CONDITIONS
>15 kV (air); > 8 kV (contact)
>4 kV
IEC 61000-4-2; level 4 (ESD); see Fig.3
HBM MIL-Std 883; class 3
001aaa191
MLE218
I
pp
120
handbook, halfpage
100 %
90 %
I
pp
100 % I ; 8 µs
pp
(%)
80
−t
e
50 % I ; 20 µs
pp
40
10 %
t
0
t = 0.7 to 1 ns
r
0
10
20
30
40
30 ns
t (µs)
60 ns
Fig.2 8/20 µs pulse waveform according to
Fig.3 ElectroStatic Discharge (ESD) pulse
waveform according to IEC 61000-4-2.
IEC 61000-4-5.
Rev. 03 - 11 September 2008
4 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VRWM
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
reverse stand-off voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
reverse leakage current
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
breakdown voltage
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
diode capacitance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
clamping voltage
PESD3V3S2UQ
−
−
−
−
−
−
−
−
−
−
3.3
V
V
V
V
V
5
12
15
24
IRM
VRWM = 3.3 V
−
−
−
−
−
0.55
50
3
µA
nA
nA
nA
nA
VRWM = 5 V
VRWM = 12 V
VRWM = 15 V
VRWM = 24 V
IZ = 5 mA
300
30
50
50
<1
<1
<1
VBR
5.2
5.6
6.0
V
V
V
V
V
6.4
6.8
7.2
14.7
17.6
26.5
15.0
18.0
27.0
15.3
18.4
27.5
Cd
f = 1 MHz; VR = 0 V
−
−
−
−
−
200
150
38
275
215
100
70
pF
pF
pF
pF
pF
32
23
50
V(CL)R
notes 1 and 2
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 15 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 5 A
Ipp = 1 A
Ipp = 3 A
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
8
V
V
V
V
V
V
V
V
V
V
20
9
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
20
19
35
23
40
36
70
Rev. 03 - 11 September 2008
5 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
SYMBOL
Rdiff
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
differential resistance
PESD3V3S2UQ
PESD5V0S2UQ
PESD12VS2UQ
PESD15VS2UQ
PESD24VS2UQ
IR = 5 mA
−
−
−
−
−
−
−
−
−
−
40
Ω
IR = 5 mA
IR = 5 mA
IR = 1 mA
IR = 0.5 mA
15
Ω
Ω
Ω
Ω
15
225
300
Notes
1. Non-repetitive current pulse 8/20 µs exponential decay waveform; see Fig.2.
2. Measured either across pins 1 and 3 or pins 2 and 3.
GRAPHICAL DATA
001aaa726
001aaa193
4
10
1.2
P
pp
P
pp
(W)
P
pp(25˚C)
3
10
0.8
2
10
0.4
10
0
2
3
1
10
10
10
0
50
100
150
200
t
(µs)
T (°C)
j
p
Tamb = 25 °C.
tp = 8/20 µs exponential decaying waveform; see Fig.2.
Fig.5 Relative variation of peak pulse power as a
function of junction temperature; typical
values.
Fig.4 Peak pulse power dissipation as a function
of pulse time; typical values.
Rev. 03 - 11 September 2008
6 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
001aaa727
001aaa728
240
50
C
d
C
d
(pF)
200
(pF)
40
160
120
80
30
20
10
0
(1)
(2)
(1)
(2)
(3)
40
0
1
2
3
4
5
0
5
10
15
20
25
V
R
(V)
V (V)
R
(1) PESD12VS2UQ; VRWM = 12 V.
(2) PESD15VS2UQ; VRWM = 15 V.
(3) PESD24VS2UQ; VRWM = 24 V.
(1) PESD3V3S2UQ; VRWM = 3.3 V.
(2) PESD5V0S2UQ; VRWM = 5 V.
Tamb = 25 °C; f = 1 MHz.
Tamb = 25 °C; f = 1 MHz.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
Fig.7 Diode capacitance as a function of reverse
voltage; typical values.
Rev. 03 - 11 September 2008
7 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
001aaa729
10
I
R
I
R(25°C)
(1)
(2)
1
−1
10
−100
−50
0
50
100
150
T (°C)
j
(1) PESD3V3S2UQ; VRWM = 3.3 V.
(2) PESD5V0S2UQ; VRWM = 5 V.
IR is less than 15 nA at 150 °C for:
PESD12VS2UQ; VRWM = 12 V.
PESD15VS2UQ; VRWM = 15 V.
PESD24VS2UQ; VRWM = 24 V.
Fig.8 Relative variation of reverse leakage
current as a function of junction
temperature; typical values.
Rev. 03 - 11 September 2008
8 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
ESD TESTER
RG 223/U
50 Ω coax
4 GHz DIGITAL
OSCILLOSCOPE
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
note 1
Note 1: IEC61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
D.U.T.: PESDxS2UQ
vertical scale = 200 V/div
horizontal scale = 50 ns/div
vertical scale = 20 V/div
horizontal scale = 50 ns/div
PESD24VS2UQ
GND
GND
GND
GND
GND
PESD15VS2UQ
PESD12VS2UQ
PESD5V2S2UQ
PESD3V3S2UQ
GND
unclamped +1 kV ESD voltage waveform
clamped +1 kV ESD voltage waveform
(IEC61000-4-2 network)
(IEC61000-4-2 network)
GND
GND
vertical scale = 10 V/div
horizontal scale = 50 ns/div
vertical scale = 200 V/div
horizontal scale = 50 ns/div
unclamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
clamped −1 kV ESD voltage waveform
(IEC61000-4-2 network)
001aaa731
Fig.9 ESD clamping test set-up and waveforms.
Rev. 03 - 11 September 2008
9 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
APPLICATION INFORMATION
The PESDxS2UQ series is designed for uni-directional protection for up to two data lines against damage caused by
ElectroStatic Discharge (ESD) and surge pulses. The PESDxS2UQ series may be used on lines where the signal
polarities are below ground. PESDxS2UQ series provide a surge capability of up to 150 W (Ppp) per line for an 8/20 µs
waveform.
line 1 to be protected
line 2 to be protected
line 1 to be protected
PESDxS2UQ
ground
PESDxS2UQ
ground
uni-directional protection
of two lines
bi-directional protection
of one line
001aaa730
Fig.10 Typical application: ESD protection of data lines.
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge transients. The
following guidelines are recommended:
• Place the PESDxS2UQ as close as possible to the input terminal or connector.
• The path length between the PESDxS2UQ and the protected line should be minimized.
• Keep parallel signal paths to a minimum.
• Avoid running protected conductors in parallel with unprotected conductors.
• Minimize all printed-circuit board conductive loops including power and ground loops.
• Minimize the length of transient return paths to ground.
• Avoid using shared return paths to a common ground point.
• Ground planes should be used whenever possible. For multilayer printed-circuit boards use ground vias.
Rev. 03 - 11 September 2008
10 of 13
NXP Semiconductors
Product specification
Double ESD protection diodes
in SOT663 package
PESDxS2UQ series
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT663
D
B
E
X
Y
H
E
3
A
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
p
c
D
E
e
e
H
L
w
y
A
p
1
E
0.6
0.5
0.33
0.23
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
01-12-04
02-05-21
SOT663
Rev. 03 - 11 September 2008
11 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Rev. 03 - 11 September 2008
12 of 13
PESDxS2UQ series
NXP Semiconductors
Double ESD protection diodes in SOT663 package
Revision history
Table 1.
Document ID
PESDXS2UQ_SER_N_3 20080911
Modifications:
Revision history
Release date
Data sheet status
Change notice
Supersedes
Product data sheet
-
PESDXS2UQ_SERIES_2
• Asterisks and note 1 removed in Marking Table
PESDXS2UQ_SERIES_2 20040427
PESDXS2UQ_SERIES_1 20031215
Product specification
-
PESDXS2UQ_SERIES_1
-
Product specification
-
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2008.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 11 September 2008
Document identifier: PESDXS2UQ_SER_N_3
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