PESD5V0L1UA [NXP]

Low capacitance unidirectional ESD protection diodes; 低电容单向ESD保护二极管
PESD5V0L1UA
型号: PESD5V0L1UA
厂家: NXP    NXP
描述:

Low capacitance unidirectional ESD protection diodes
低电容单向ESD保护二极管

瞬态抑制器 二极管 光电二极管 PC 局域网
文件: 总13页 (文件大小:113K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PESD5V0L1UA; PESD5V0L1UB;  
PESD5V0L1UL  
Low capacitance unidirectional ESD protection diodes  
Rev. 01 — 17 June 2009  
Product data sheet  
1. Product profile  
1.1 General description  
Low capacitance unidirectional ElectroStatic Discharge (ESD) protection diodes in small  
Surface-Mounted Device (SMD) plastic packages designed to protect one signal line from  
the damage caused by ESD and other transients.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Package configuration  
JEITA  
SC-76  
SC-79  
-
PESD5V0L1UA  
PESD5V0L1UB  
PESD5V0L1UL  
SOD323  
SOD523  
SOD882  
very small  
ultra small and flat lead  
leadless ultra small  
1.2 Features  
I Unidirectional ESD protection of  
one line  
I ESD protection up to 26 kV  
I Low diode capacitance: Cd = 25 pF  
I Low clamping voltage: VCL = 12 V  
I Very low leakage current: IRM = 10 nA  
I IEC 61000-4-2; level 4 (ESD)  
I AEC-Q101 qualified  
1.3 Applications  
I Computers and peripherals  
I Subscriber Identity Module (SIM) card  
protection  
I Audio and video equipment  
I Cellular handsets and accessories  
I Communication systems  
I Portable electronics  
I FireWire  
I High-speed data lines  
1.4 Quick reference data  
Table 2.  
Quick reference data  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
Min  
Typ  
-
Max  
5.0  
30  
Unit  
V
VRWM  
Cd  
reverse standoff voltage  
diode capacitance  
-
-
f = 1 MHz; VR = 0 V  
25  
pF  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
2. Pinning information  
Table 3.  
Pin  
Pinning  
Description  
Simplified outline  
Graphic symbol  
PESD5V0L1UA; PESD5V0L1UB  
[1]  
1
2
cathode  
anode  
2
1
1
2
006aaa152  
001aab540  
PESD5V0L1UL  
[1]  
1
2
cathode  
anode  
2
1
1
2
006aaa152  
Transparent  
top view  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
SC-76  
SC-79  
-
Description  
Version  
PESD5V0L1UA  
PESD5V0L1UB  
PESD5V0L1UL  
plastic surface-mounted package; 2 leads  
plastic surface-mounted package; 2 leads  
SOD323  
SOD523  
SOD882  
leadless ultra small plastic package; 2 terminals;  
body 1.0 × 0.6 × 0.5 mm  
4. Marking  
Table 5.  
Marking codes  
Type number  
PESD5V0L1UA  
PESD5V0L1UB  
PESD5V0L1UL  
Marking code  
1J  
Z8  
XY  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
2 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol  
PPP  
Parameter  
Conditions  
tp = 8/20 µs  
tp = 8/20 µs  
Min  
Max  
42  
Unit  
W
[1][2]  
[1][2]  
peak pulse power  
peak pulse current  
junction temperature  
ambient temperature  
storage temperature  
-
IPP  
-
3.5  
A
Tj  
-
150  
+150  
+150  
°C  
°C  
°C  
Tamb  
Tstg  
55  
65  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[2] Measured from pin 1 to pin 2.  
Table 7.  
ESD maximum ratings  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Max Unit  
[1]  
VESD  
electrostatic discharge voltage  
IEC 61000-4-2  
-
26  
kV  
(contact discharge)  
machine model  
-
-
400  
10  
V
MIL-STD-883 (human  
body model)  
kV  
[1] Device stressed with ten non-repetitive ESD pulses.  
Table 8.  
ESD standards compliance  
Standard  
Conditions  
IEC 61000-4-2; level 4 (ESD)  
> 15 kV (air); > 8 kV (contact)  
> 4 kV  
MIL-STD-883; class 3 (human body model)  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
3 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
001aaa631  
I
PP  
001aaa630  
120  
100 %  
90 %  
100 % I ; 8 µs  
PP  
I
PP  
(%)  
80  
t  
e
50 % I ; 20 µs  
PP  
40  
10 %  
t
t = 0.7 ns to 1 ns  
r
0
30 ns  
60 ns  
0
10  
20  
30  
40  
t (µs)  
Fig 1. 8/20 µs pulse waveform according to  
Fig 2. ESD pulse waveform according to  
IEC 61000-4-2  
IEC 61000-4-5  
6. Characteristics  
Table 9.  
Characteristics  
Tamb = 25 °C unless otherwise specified.  
Symbol Parameter Conditions  
VRWM reverse standoff voltage  
IRM  
Min  
Typ  
-
Max  
5.0  
100  
7.2  
30  
Unit  
V
-
reverse leakage current  
breakdown voltage  
diode capacitance  
VRWM = 5.0 V  
IR = 5 mA  
-
10  
6.8  
25  
nA  
V
VBR  
Cd  
6.4  
-
f = 1 MHz;  
VR = 0 V  
pF  
[1][2]  
VCL  
clamping voltage  
IPP = 1 A  
-
-
-
-
-
-
-
-
9
V
V
V
IPP = 3.5 A  
IR = 5 mA  
IF = 200 mA  
12  
30  
1.2  
rdif  
VF  
differential resistance  
forward voltage  
[1] Non-repetitive current pulse 8/20 µs exponential decay waveform according to IEC 61000-4-5.  
[2] Measured from pin 1 to pin 2.  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
4 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
I
006aab565  
35  
C
d
(pF)  
30  
25  
20  
15  
10  
V  
V  
V  
V
CL  
BR  
RWM  
I  
I  
RM  
R
+
P-N  
I  
PP  
0
1
2
3
4
5
V
(V)  
R
006aaa407  
f = 1 MHz; Tamb = 25 °C  
Fig 3. Diode capacitance as a function of reverse  
voltage; typical values  
Fig 4. V-I characteristics for a unidirectional  
ESD protection diode  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
5 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
ESD TESTER  
4 GHz DIGITAL  
OSCILLOSCOPE  
RG 223/U  
50 coax  
R
Z
450 Ω  
10×  
ATTENUATOR  
C
Z
50 Ω  
DUT  
(Device  
Under  
Test)  
IEC 61000-4-2 network  
= 150 pF; R = 330 Ω  
C
Z
Z
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
vertical scale = 6 V/div  
horizontal scale = 100 ns/div  
GND  
GND  
unclamped +8 kV ESD pulse waveform  
clamped +8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
(IEC 61000-4-2 network)  
vertical scale = 10 A/div  
horizontal scale = 15 ns/div  
GND  
GND  
vertical scale = 6 V/div  
horizontal scale = 100 ns/div  
unclamped 8 kV ESD pulse waveform  
(IEC 61000-4-2 network)  
clamped 8 kV ESD voltage waveform  
(IEC 61000-4-2 network)  
006aab566  
Fig 5. ESD clamping test setup and waveforms  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
6 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
7. Application information  
The PESD5V0L1Ux series is designed for the protection of one unidirectional data or  
signal line from the damage caused by ESD and surge pulses. The devices may be used  
on lines where the signal polarities are either positive or negative with respect to ground.  
The PESD5V0L1Ux series provides a surge capability up to 42 W per line for an 8/20 µs  
waveform.  
line to be protected  
line to be protected  
(positive signal polarity)  
(negative signal polarity)  
PESD5V0L1Ux  
PESD5V0L1Ux  
GND  
GND  
unidirectional protection of one line  
006aab613  
Fig 6. Application diagram  
Circuit board layout and protection device placement  
Circuit board layout is critical for the suppression of ESD and Electrical Fast  
Transient (EFT). The following guidelines are recommended:  
1. Place the device as close to the input terminal or connector as possible.  
2. The path length between the device and the protected line should be minimized.  
3. Keep parallel signal paths to a minimum.  
4. Avoid running protected conductors in parallel with unprotected conductors.  
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and  
ground loops.  
6. Minimize the length of the transient return path to ground.  
7. Avoid using shared transient return paths to a common ground point.  
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground  
vias.  
8. Test information  
8.1 Quality information  
This product has been qualified in accordance with the Automotive Electronics Council  
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is  
suitable for use in automotive applications.  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
7 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
9. Package outline  
0.85  
0.75  
0.65  
0.58  
1.35  
1.15  
1.1  
0.8  
0.45  
0.15  
1
1
1.65 1.25  
1.55 1.15  
2.7 1.8  
2.3 1.6  
2
2
0.40  
0.25  
0.25  
0.10  
0.34  
0.26  
0.17  
0.11  
Dimensions in mm  
03-12-17  
Dimensions in mm  
02-12-13  
Fig 7. Package outline  
Fig 8. Package outline  
PESD5V0L1UA (SOD323/SC-76)  
PESD5V0L1UB (SOD523/SC-79)  
0.50  
0.46  
0.62  
0.55  
2
1
0.30  
0.22  
1.02  
0.95  
0.65  
0.30  
0.22  
0.55  
0.47  
cathode marking on top side  
Dimensions in mm  
03-04-17  
Fig 9. Package outline PESD5V0L1UL (SOD882)  
10. Packing information  
Table 10. Packing methods  
The indicated -xxx are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
-115  
-
8000  
10000  
-135  
-
PESD5V0L1UA SOD323  
PESD5V0L1UB SOD523  
4 mm pitch, 8 mm tape and reel  
2 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
2 mm pitch, 8 mm tape and reel  
-
-315  
-115  
-
-
-
-135  
-315  
PESD5V0L1UL SOD882  
[1] For further information and the availability of packing methods, see Section 14.  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
8 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
11. Soldering  
3.05  
2.1  
solder lands  
solder resist  
1.65 0.95  
0.5 (2×) 0.6 (2×)  
solder paste  
occupied area  
2.2  
Dimensions in mm  
0.5  
(2×)  
0.6  
(2×)  
sod323_fr  
Fig 10. Reflow soldering footprint PESD5V0L1UA (SOD323/SC-76)  
5
2.9  
1.5 (2×)  
solder lands  
solder resist  
occupied area  
1.2  
2.75  
Dimensions in mm  
(2×)  
preferred transport  
direction during soldering  
sod323_fw  
Fig 11. Wave soldering footprint PESD5V0L1UA (SOD323/SC-76)  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
9 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
2.15  
1.1  
solder lands  
solder resist  
0.5 0.6  
1.2  
(2×) (2×)  
solder paste  
occupied area  
Dimensions in mm  
0.7  
(2×)  
0.8  
(2×)  
sod523_fr  
Reflow soldering is the only recommended soldering method.  
Fig 12. Reflow soldering footprint PESD5V0L1UB (SOD523/SC-79)  
1.3  
0.7  
R0.05 (8×)  
solder lands  
solder resist  
0.6 0.7  
(2×) (2×)  
0.9  
solder paste  
occupied area  
0.3  
(2×)  
Dimensions in mm  
0.4  
(2×)  
sod882_fr  
Reflow soldering is the only recommended soldering method.  
Fig 13. Reflow soldering footprint PESD5V0L1UL (SOD882)  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
10 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
12. Revision history  
Table 11. Revision history  
Document ID  
Release date  
Data sheet status  
Change notice  
Supersedes  
PESD5V0L1UA_UB_UL_1 20090617  
Product data sheet  
-
-
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
11 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
13. Legal information  
13.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
13.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
13.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted  
or construed as an offer to sell products that is open for acceptance or the  
grant, conveyance or implication of any license under any copyrights, patents  
or other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
13.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
14. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PESD5V0L1UA_UB_UL_1  
© NXP B.V. 2009. All rights reserved.  
Product data sheet  
Rev. 01 — 17 June 2009  
12 of 13  
PESD5V0L1UA/UB/UL  
NXP Semiconductors  
Low capacitance unidirectional ESD protection diodes  
15. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
General description. . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Application information. . . . . . . . . . . . . . . . . . . 7  
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7  
Quality information . . . . . . . . . . . . . . . . . . . . . . 7  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Packing information. . . . . . . . . . . . . . . . . . . . . . 8  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11  
3
4
5
6
7
8
8.1  
9
10  
11  
12  
13  
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12  
13.1  
13.2  
13.3  
13.4  
14  
15  
Contact information. . . . . . . . . . . . . . . . . . . . . 12  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2009.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 17 June 2009  
Document identifier: PESD5V0L1UA_UB_UL_1  

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NXP

PESD5V0L1ULD

Low capacitance unidirectional ESD protection diode
NXP

PESD5V0L1ULD

Low capacitance unidirectional ESD protection diodeProduction
NEXPERIA

PESD5V0L1ULD,315

TVS DIODE 5V 12V 2DFN1006D
ETC