PESD5V0X1BL_09 [NXP]
Ultra low capacitance bidirectional ESD protection diode; 超低电容双向ESD保护二极管型号: | PESD5V0X1BL_09 |
厂家: | NXP |
描述: | Ultra low capacitance bidirectional ESD protection diode |
文件: | 总11页 (文件大小:70K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PESD5V0X1BL
Ultra low capacitance bidirectional ESD protection diode
Rev. 02 — 16 July 2009
Product data sheet
1. Product profile
1.1 General description
Ultra low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode in a
SOD882 leadless ultra small Surface-Mounted Device (SMD) plastic package designed
to protect one signal line from the damage caused by ESD and other transients.
1.2 Features
I Bidirectional ESD protection of one line I ESD protection up to 9 kV
I Ultra low diode capacitance: Cd = 0.9 pF I IEC 61000-4-2; level 4 (ESD)
I Very low leakage current: IRM = 1 nA
I AEC-Q101 qualified
1.3 Applications
I USB interfaces
I Cellular handsets and accessories
I Portable electronics
I Antenna protection
I 10/100/1000 Mbit/s Ethernet
I FireWire
I Communication systems
I Computers and peripherals
I Audio and video equipment
I High-speed data lines
I Subscriber Identity Module (SIM) card
protection
1.4 Quick reference data
Table 1.
Quick reference data
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Typ
Max
Unit
VRWM
Cd
reverse standoff voltage
diode capacitance
-
-
-
5
V
f = 1 MHz; VR = 0 V
0.9
1.3
pF
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
2. Pinning information
Table 2.
Pinning
Pin
1
Description
Simplified outline
Graphic symbol
[1]
cathode (diode 1)
cathode (diode 2)
1
2
2
1
2
006aab041
Transparent
top view
[1] The marking bar indicates pin 1.
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
-
Description
Version
PESD5V0X1BL
leadless ultra small plastic package; 2 terminals;
SOD882
body 1.0 × 0.6 × 0.5 mm
4. Marking
Table 4.
Marking codes
Type number
Marking code
PESD5V0X1BL
XX
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per device
Tj
Parameter
Conditions
Min
Max
Unit
junction temperature
ambient temperature
storage temperature
-
150
°C
°C
°C
Tamb
−55
−65
+150
+150
Tstg
Table 6.
ESD maximum ratings
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Per diode
Conditions
Min
Max Unit
[1]
VESD
electrostatic discharge voltage
IEC 61000-4-2
(contact discharge)
-
-
9
kV
kV
MIL-STD-883 (human
body model)
10
[1] Device stressed with ten non-repetitive ESD pulses.
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
2 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
Table 7.
ESD standards compliance
Standard
Conditions
Per diode
IEC 61000-4-2; level 4 (ESD)
MIL-STD-883; class 3 (human body model)
> 8 kV (contact)
> 4 kV
001aaa631
I
PP
100 %
90 %
10 %
t
t = 0.7 ns to 1 ns
r
30 ns
60 ns
Fig 1. ESD pulse waveform according to IEC 61000-4-2
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
3 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
6. Characteristics
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Per diode
VRWM
IRM
Parameter
Conditions
Min
Typ
Max
Unit
reverse standoff voltage
reverse leakage current
breakdown voltage
-
-
5
V
VRWM = 5 V
IR = 5 mA
f = 1 MHz
VR = 0 V
-
1
100
9.5
nA
V
VBR
6.0
7.5
Cd
diode capacitance
-
-
-
0.9
0.8
-
1.3
1.2
100
pF
pF
Ω
VR = 5 V
rdif
differential resistance
IR = 1 mA
006aab249
1.0
I
PP
C
(pF)
d
0.96
0.92
0.88
0.84
0.80
I
R
I
−V −V
CL
−V
RWM
RM
BR
−I
−I
V
V
V
RM
R
RWM BR CL
−
+
−I
PP
0
1
2
3
4
5
V
(V)
R
006aaa676
f = 1 MHz; Tamb = 25 °C
Fig 2. Diode capacitance as a function of reverse
voltage; typical values
Fig 3. V-I characteristics for a bidirectional
ESD protection diode
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
4 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
ESD TESTER
4 GHz DIGITAL
OSCILLOSCOPE
RG 223/U
50 Ω coax
R
Z
450 Ω
10×
ATTENUATOR
C
Z
50 Ω
DUT
(DEVICE
UNDER
TEST)
IEC 61000-4-2 network
= 150 pF; R = 330 Ω
C
Z
Z
vertical scale = 2 kV/div
vertical scale = 20 V/div
horizontal scale = 15 ns/div
horizontal scale = 100 ns/div
GND
GND
unclamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped +8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
vertical scale = 2 kV/div
horizontal scale = 15 ns/div
GND
GND
vertical scale = 20 V/div
horizontal scale = 100 ns/div
unclamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network)
clamped −8 kV ESD pulse waveform
(IEC 61000-4-2 network) pin 1 to 2
006aab336
Fig 4. ESD clamping test setup and waveforms
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
5 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
7. Application information
PESD5V0X1BL is designed for the protection of one bidirectional data or signal line from
the damage caused by ESD. The device may be used on lines where the signal polarities
are both, positive and negative with respect to ground.
line to be protected
PESD5V0X1BL
GND
006aab250
Fig 5. Application diagram
Circuit board layout and protection device placement
Circuit board layout is critical for the suppression of ESD and Electrical Fast
Transient (EFT). The following guidelines are recommended:
1. Place the device as close to the input terminal or connector as possible.
2. The path length between the device and the protected line should be minimized.
3. Keep parallel signal paths to a minimum.
4. Avoid running protected conductors in parallel with unprotected conductors.
5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and
ground loops.
6. Minimize the length of the transient return path to ground.
7. Avoid using shared transient return paths to a common ground point.
8. Ground planes should be used whenever possible. For multilayer PCBs, use ground
vias.
8. Test information
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
6 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
9. Package outline
0.50
0.46
0.62
0.55
2
1
0.30
0.22
1.02
0.95
0.65
0.30
0.22
0.55
0.47
cathode marking on top side
Dimensions in mm
03-04-17
Fig 6. Package outline PESD5V0X1BL (SOD882)
10. Packing information
Table 9.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number
Package
Description
Packing quantity
10000
PESD5V0X1BL SOD882
2 mm pitch, 8 mm tape and reel
-315
[1] For further information and the availability of packing methods, see Section 14.
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
7 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
11. Soldering
1.3
0.7
R0.05 (8×)
solder lands
solder resist
0.6 0.7
(2×) (2×)
0.9
solder paste
occupied area
0.3
(2×)
Dimensions in mm
0.4
(2×)
sod882_fr
Reflow soldering is the only recommended soldering method.
Fig 7. Reflow soldering footprint PESD5V0X1BL (SOD882)
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
8 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
12. Revision history
Table 10. Revision history
Document ID
Release date
20090716
Data sheet status
Change notice
Supersedes
PESD5V0X1BL_2
Product data sheet
-
PESD5V0X1BA_
PESD5V0X1BL_1
Modifications:
• Type number PESD5V0X1BA removed
• Figure 5: updated
• Section 13 “Legal information”: updated
PESD5V0X1BA_
PESD5V0X1BL_1
20081104
Product data sheet
-
-
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
9 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
13.3 Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
13.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PESD5V0X1BL_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 16 July 2009
10 of 11
PESD5V0X1BL
NXP Semiconductors
Ultra low capacitance bidirectional ESD protection diode
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4
Application information. . . . . . . . . . . . . . . . . . . 6
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 6
Quality information . . . . . . . . . . . . . . . . . . . . . . 6
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7
Packing information. . . . . . . . . . . . . . . . . . . . . . 7
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 9
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 10
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 10
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 10
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 July 2009
Document identifier: PESD5V0X1BL_2
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