PH3230S,115 [NXP]
PH3230S - N-channel TrenchMOS intermediate level FET SOIC 4-Pin;
| 型号： | PH3230S,115 |
| 厂家： | 
NXP |
| 描述： | PH3230S - N-channel TrenchMOS intermediate level FET SOIC 4-Pin 开关 脉冲 晶体管 |
| 文件： | 总12页 (文件大小：217K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PH3230S
N-channel TrenchMOS intermediate level FET
Rev. 04 — 27 November 2009
Product data sheet
1. Product profile
1.1 General description
Intermediate level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
Simple gate drive required due to low
on-state resistance
gate charge
Saves PCB space due to small
Suitable for logic level gate drive
footprint
sources
1.3 Applications
Computer motherboards
DC-to-DC convertors
Notebook computers
Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 150 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
30
V
A
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
100
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
62.5
-
W
Dynamic characteristics
QGD gate-drain charge
VGS = 5 V; ID = 50 A;
VDS = 10 V; Tj = 25 °C;
see Figure 12
13
nC
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 25 °C;
-
2.7
3.2
mΩ
see Figure 9 and 10
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
S
S
S
G
D
source
source
source
gate
mb
D
2
3
G
4
mbb076
S
mb
mounting base; connected to
drain
1
2 3 4
SOT669 (LFPAK)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
plastic single-ended surface-mounted package (LFPAK); 4 leads
Version
PH3230S
LFPAK
SOT669
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
30
Unit
drain-source voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 150 °C
-
V
VGS
-20
20
V
ID
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
VGS = 10 V; Tmb = 100 °C; see Figure 1
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
100
63
A
-
A
IDM
Ptot
Tstg
Tj
peak drain current
-
300
62.5
150
150
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
52
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
156
Avalanche ruggedness
EDS(AL)R
repetitive drain-source VGS = 10 V; ID = 5 A; Vsup = 15 V; RGS ≥ 50 Ω
avalanche energy
-
-
2.5
mJ
mJ
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 50 A; Vsup ≤ 15 V;
250
drain-source avalanche unclamped; RGS = 50 Ω
energy
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
2 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
003aaa629
03ah31
120
120
I
der
P
der
(%)
(%)
80
40
0
80
40
0
200
50
100
150
Tmb (°C)
0
0
50
100
150
200
(°C)
T
mb
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
03al32
103
ID
Limit RDSon = VDS / ID
(A)
tp = 10 μs
102
1 ms
100 μs
DC
10
10 ms
100 ms
1
10-1
1
10
102
VDS (V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
3 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from see Figure 4
junction to mounting
base
-
-
2
K/W
03al31
10
Zth(j-mb)
(K/W)
δ = 0.5
1
10-1
10-2
10-3
0.2
0.1
0.05
0.02
tp
P
δ =
T
single pulse
t
tp
T
1e-6
10-5
10-4
10-3
10-2
10-1
1
tp (s)
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
4 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 10 mA; VGS = 0 V; Tj = 25 °C
30
1
-
-
V
V
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 25 °C;
2
3
voltage
see Figure 8
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 30 V; VGS = 0 V; Tj = 25 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
-
-
-
-
-
1
µA
nA
nA
mΩ
10
10
5
100
100
6.5
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 25 A; Tj = 25 °C;
see Figure 9
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 9 and 10
-
2.7
3.2
mΩ
Source-drain diode
VSD source-drain voltage
IS = 25 A; VGS = 0 V; Tj = 25 °C;
see Figure 11
-
-
0.8
46
1.2
-
V
trr
reverse recovery time
IS = 20 A; dIS/dt = -50 A/µs; VGS = 0 V;
VDS = 25 V; Tj = 25 °C
ns
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 50 A; VDS = 10 V; VGS = 5 V;
Tj = 25 °C; see Figure 12
-
-
-
-
-
-
42
-
-
-
-
-
-
nC
nC
nC
pF
pF
pF
21
13
VDS = 10 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; see Figure 13
4100
1150
750
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; RL = 0.4 Ω; VGS = 10 V;
RG(ext) = 4.7 Ω; Tj = 25 °C
-
14
37
85
37
75
-
-
-
-
-
ns
ns
ns
ns
S
-
turn-off delay time
fall time
-
-
gfs
transfer conductance
VDS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 14
39
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
5 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
03al33
03al36
100
80
10
5
4.5
ID
ID
(A)
(A)
75
50
25
0
60
40
20
0
4
Tj = 25 °C
150 °C
VGS (V) = 3.5
0
0.5
1
1.5
2
0
2
4
6
VDS (V)
VGS (V)
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03al42
03al41
−1
10
4
I
D
V
GS(th)
(V)
(A)
−2
10
10
10
10
10
3
2
1
0
max
typ
−3
−4
−5
−6
min
typ
max
min
80
−80
0
160
0
1
2
3
4
V
(V)
T ( C)
°
GS
j
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Gate-source threshold voltage as a function of
junction temperature
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
6 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
03al35
03al34
2.0
a
10
4.5
VGS (V) = 4
RDSon
(mΩ)
1.5
1.0
0.5
0
7.5
5
5
10
2.5
0
0
25
50
75
100
−60
0
60
120
180
ID (A)
T (°C)
j
Fig 9. Normalized drain-source on-state resistance
factor as a function of junction temperature
Fig 10. Drain-source on-state resistance as a function
of drain current; typical values
03al38
03al40
100
10
VGS
(V)
IS
(A)
8
6
4
2
0
75
Tj = 25 °C
150 °C
50
25
0
0.0
0.5
1.0
1.5
0
25
50
75
100
VSD (V)
QG (nC)
Fig 11. Source current as a function of source-drain
voltage; typical values
Fig 12. Gate-source voltage as a function of gate
charge; typical values
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
7 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
03al39
03al37
4
10
120
gfs
(S)
C
iss
C
pF)
Tj = 25 °C
80
150 °C
3
10
C
C
oss
40
rss
2
0
10
−1
2
0
20
40
60
80
10
1
10
10
ID (A)
V
DS
(V)
Fig 14. Forward transconductance as a function of
drain current; typical values
Fig 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
8 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
7. Package outline
Plastic single-ended surface-mounted package (LFPAK); 4 leads
SOT669
A
2
E
A
C
c
E
1
b
2
2
b
3
L
1
mounting
base
b
4
D
1
D
H
L
2
1
2
3
4
X
e
w
M
c
A
b
1/2 e
A
(A )
3
C
A
1
θ
L
detail X
y
C
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
D
(1)
D
(1)
(1)
1
A
A
A
H
L
L
L
2
w
y
θ
UNIT
A
b
b
b
b
c
c
E
E
1
e
1
2
3
1
2
3
4
2
max
1.20 0.15 1.10
1.01 0.00 0.95
0.50 4.41 2.2 0.9 0.25 0.30 4.10
0.35 3.62 2.0 0.7 0.19 0.24 3.80
5.0 3.3
4.8 3.1
6.2 0.85 1.3 1.3
5.8 0.40 0.8 0.8
8°
0°
mm
0.25
4.20
1.27
0.25 0.1
Note
1. Plastic or metal protrusions of 0.15 mm maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
04-10-13
06-03-16
SOT669
MO-235
Fig 15. Package outline SOT669 (LFPAK)
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
9 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
8. Revision history
Table 7.
Revision history
Document ID
PH3230S_4
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091127
Product data sheet
-
PH3230S-03
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
PH3230S-03
(9397 750 12756)
20040302
20030423
20030212
Product data
Product data
Preliminary data
-
-
-
PH3230S-02
PH3230S-01
-
PH3230S-02
(9397 750 11279)
PH3230S-01
(9397 750 11078)
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
10 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Applications— Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Terms and conditions of sale— NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
athttp://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General— Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS— is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PH3230S_4
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 04 — 27 November 2009
11 of 12
PH3230S
NXP Semiconductors
N-channel TrenchMOS intermediate level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 27 November 2009
Document identifier: PH3230S_4
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