PHB160N03T [NXP]
N-channel enhancement mode field-effect transistor; N沟道增强模式音响场效晶体管
| 型号： | PHB160N03T |
| 厂家： | 
NXP |
| 描述： | N-channel enhancement mode field-effect transistor |
| 文件： | 总13页 (文件大小：253K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHB160N03T
N-channel enhancement mode field-effect transistor
Rev. 01 — 13 September 2000
Product specification
M3D166
1. Description
N-channel enhancement mode field-effect transistor in a plastic package using
TrenchMOS™1 technology.
Product availability:
PHB160N03T in SOT404 (D2-PAK).
2. Features
■ TrenchMOS™ technology
■ Very low on-state resistance.
3. Applications
■ DC to DC converters
■ Switched-mode power supplies
■ General purpose switch.
c
c
4. Pinning information
Table 1: Pinning - SOT404 (D2-PAK), simplified outline and symbol
Pin
1
Description
gate (g)
Simplified outline
Symbol
mb
[1]
2
drain (d)
d
s
3
source (s)
mb
connected to drain (d)
g
MBB076
2
1
3
MBK116
SOT404 (D2-PAK)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
1. TrenchMOS is a trademark of Royal Philips Electronics.
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
5. Quick reference data
Table 2: Quick reference data
Symbol Parameter
Conditions
Typ
−
Max
30
Unit
V
VDS
ID
drain-source voltage (DC)
drain current (DC)
Tj = 25 to 175 oC
Tmb = 25 oC; VGS = 10V
Tmb = 25 oC
−
75
A
Ptot
Tj
total power dissipation
junction temperature
−
230
175
5
W
−
°C
mΩ
RDSon
drain-source on-state resistance
VGS = 10 V; ID = 25 A
4.3
6. Limiting values
Table 3: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Tj = 25 to 175 oC
Tj = 25 to 175 oC; RGS = 20 kΩ
Min
Max
30
Unit
V
VDS
VDGR
VGS
ID
drain-source voltage (DC)
−
−
−
−
drain-gate voltage (DC)
gate-source voltage (DC)
drain current (DC)
30
V
±30
75
V
Tmb = 25 °C; VGS = 10 V;
A
Figure 2 and 3
T
mb = 100 °C; VGS = 10 V;
−
75
A
Figure 2 and 3
IDM
Ptot
Tstg
Tj
peak drain current
Tmb = 25 °C; pulsed; tp ≤ 10 µs
Tmb = 25 °C; Figure 1
−
240
A
total power dissipation
storage temperature
−
230
W
°C
°C
−55
−55
+175
+175
operating junction temperature
Source-drain diode
IS
source (diode forward) current (DC)
peak source (diode forward) current
Tmb = 25 °C
−
−
75
A
A
ISM
Tmb = 25 °C; pulsed; tp ≤ 10 µs
240
Avalanche ruggedness
EAS non-repetitive avalanche energy
unclamped inductive load;
ID = 75 A; tp = 0.1 ms;
−
−
500
75
mJ
A
VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
IAS
non-repetitive avalanche current
unclamped inductive load;
VDD ≤ 25 V; RGS = 50 Ω;
VGS = 10 V; starting Tj = 25 °C
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
2 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa16
03ad31
120
120
der
P
I
der
(%)
100
(%)
100
80
60
40
20
0
80
60
40
20
0
0
25
50
75 100 125 150 175 200
o
0
25
50
75 100 125 150 175 200
o
T
( C)
T
( C)
mb
mb
V
GS ≥ 10 V
Ptot
Pder
=
× 100%
----------------------
P
ID
°
tot(25 C)
Ider
=
× 100%
------------------
I
°
D(25 C)
Fig 1. Normalized total power dissipation as a
function of mounting base temperature.
Fig 2. Normalized continuous drain current as a
function of mounting base temperature.
03ad34
3
10
R
= V
/ I
DS D
DSon
I
D
tp = 10 µs
100 µs
(A)
2
10
1 ms
DC
10 ms
t
p
P
δ =
T
100ms
10
t
t
p
T
1
2
10
1
10
V
(V)
DS
Tmb = 25°C; IDM is single pulse
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
3 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
7. Thermal characteristics
Table 4: Thermal characteristics
Symbol
Parameter
Conditions
Value
Unit
Rth(j-mb)
thermal resistance from junction to mounting
base
Figure 4
0.65
K/W
Rth(j-a)
thermal resistance from junction to ambient
Mounted on a printed circuit board; 50
minimum footprint
K/W
7.1 Transient thermal impedance
03ad20
1
δ = 0.5
Z
th(j-mb)
(K/W)
0.2
-1
10
0.1
0.05
0.02
t
p
P
δ
=
-2
T
10
single pulse
t
t
p
T
-3
10
-1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
t
(s)
p
Fig 4. Transient thermal impedance from junction to mounting base as a function of
pulse duration.
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
4 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
8. Characteristics
Table 5: Characteristics
Tj = 25 °C unless otherwise specified
Symbol
Static characteristics
V(BR)DSS drain-source breakdown
voltage
Parameter
Conditions
Min
Typ
Max
Unit
ID = 250 µA; VGS = 0 V
Tj = 25 °C
30
27
−
−
−
−
V
V
Tj = −55 °C
VGS(th)
gate-source threshold voltage ID = 1 mA; VDS = VGS
Figure 9
Tj = 25 °C
;
2
1
−
3
−
−
4
V
V
V
Tj = 175 °C
Tj = −55 °C
−
4.4
IDSS
drain-source leakage current VDS = 30 V; VGS = 0 V
Tj = 25 °C
Tj = 175 °C
−
−
−
0.05
−
10
µA
µA
nA
500
100
IGSS
gate-source leakage current VGS = ±20 V; VDS = 0 V
2
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A;
Figure 7 and 8
Tj = 25 °C
−
−
4.3
5
mΩ
mΩ
Tj = 175 °C
−
9.3
Dynamic characteristics
gfs
forward transconductance
VDS = 25 V; ID = 25 A;
Figure 11
−
55
−
S
Qg(tot)
Qgs
Qgd
Ciss
Coss
Crss
td(on)
tr
total gate charge
ID = 75 A; VDS = 15 V;
VGS = 10 V; Figure 14
−
−
−
−
−
−
−
−
−
−
125
19
−
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
gate-source charge
gate-drain (Miller) charge
input capacitance
−
56
−
VGS = 0 V; VDS = 25 V;
f = 1 MHz; Figure 12
4500
1500
960
35
6000
1800
1300
55
output capacitance
reverse transfer capacitance
turn-on delay time
turn-on rise time
VDD = 30 V; RD = 1.2 Ω;
VGS = 10 V; RG = 10 Ω
130
155
150
200
230
220
td(off)
tf
turn-off delay time
turn-off fall time
Source-drain diode
VSD
source-drain (diode forward) IS = 25 A; VGS = 0 V;
−
−
0.85
1.1
1.2
V
V
voltage
IS = 75 A; VGS = 0 V;
−
Figure 13
trr
reverse recovery time
recovered charge
IS = 75 A;
dIS/dt = −100 A/µs;
VGS = −10 V; VDS = 30 V
−
−
400
1.0
−
−
ns
Qr
µC
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
5 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ad22
03ad23
400
100
20
12
10
9
I
D
I
V
(V) =
8.5
D
GS
V
> I X R
D DSon
(A)
DS
(A)
80
300
8.0
7.5
60
40
20
200
100
o
o
= 175 C
T
7.0
6.5
6.0
25
C
j
4.5
5.0
0
0
0
2
4
6
8
10
0
1
2
3
4
5
6
7
V
(V)
V
(V)
DS
GS
Tj = 25 °C
Tj = 25 °C and 175 °C; VDS > ID × RDSon
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a
function of gate-source voltage; typical values.
03aa27
03ad21
11
2.0
a
1.8
10
R
DSon
1.6
1.4
1.2
9
(mΩ)
8
V
=
GS
5.5 V
7
1.0
0.8
6
5
6 V
6.5 V
0.6
0.4
0.2
0
7 V
8 V
10 V
4
3
-60
-20
20
60
100
140
180
0
20
40
60
80
(A)
100
o
I
T ( C)
j
D
Tj = 25 °C
RDSon
a=
----------------------------
RDSon(25°C)
Fig 7. Drain-source on-state resistance as a function
of drain current; typical values.
Fig 8. Normalized drain source on-state resistance
factor as a function of junction temperature.
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
6 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03aa32
03aa35
5
-1
10
4.5
I
D
V
GS(th)
(A)
-2
4
10
(V)
max.
3.5
3
-3
10
typ.
min
2.5
2
min
typ
max
-4
-5
-6
10
10
10
1.5
1
0.5
0
-60
-20
20
60
100
140
o
180
0
1
2
3
4
5
T ( C)
V
(V)
j
GS
ID = 1 mA; VDS = VGS
Tj = 25 °C; VDS = 5 V
Fig 9. Gate-source threshold voltage as a function of
junction temperature.
Fig 10. Sub-threshold drain current as a function of
gate-source voltage.
03ad24
03ad25
90
10
9
80
70
60
C
, C
g
iss oss
fs
(S)
C
rss
8
7
(nF)
6
5
4
3
2
1
0
50
40
Ciss
30
20
10
0
Coss
Crss
2
-1
10
-2
10
10
V
1
10
0
20
40
60
80
100
(V)
I
(A)
DS
D
Tj = 25 °C; VDS > ID × RDSon
VGS = 0 V; f = 1 MHz
Fig 11. Forward transconductance as a function of
drain current; typical values.
Fig 12. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values.
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
7 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
03ad30
03ad29
100
10
I
D
9
V
GS
(A)
80
(V)
8
I
= 75 A
= 15V
D
o
o
V
7
6
5
4
3
2
1
0
25
C
175
=
C
T
DS
j
60
40
20
0
0
0.2
0.4
0.6
0.8
1.0
0
40
120
20
60
100
Q (nC)
G
80
V
(V)
SD
Tj = 25 °C and 175 °C; VGS = 0 V
ID = 75 A; VDS = 15 V
Fig 13. Source (diode forward) current as a function of
source-drain (diode forward) voltage; typical
values.
Fig 14. Gate-source voltage as a function of gate
charge; typical values.
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
8 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
9. Package outline
2
Plastic single-ended surface mounted package (Philips version of D -PAK); 3 leads
(one lead cropped)
SOT404
A
A
E
1
mounting
base
D
1
D
H
D
2
L
p
1
3
c
b
e
e
Q
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
D
E
A
A
b
UNIT
c
D
e
L
H
Q
1
1
p
D
max.
4.50
4.10
1.40
1.27
0.85
0.60
0.64
0.46
1.60
1.20
10.30
9.70
2.90 15.40 2.60
2.10 14.80 2.20
mm
11
2.54
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
98-12-14
99-06-25
SOT404
Fig 15. SOT404 (D2-PAK).
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
9 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
10. Revision history
Table 6: Revision history
Rev Date
CPCN
-
Description
01 20000913
Product specification
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
10 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
11. Data sheet status
[1]
Datasheet status
Product status Definition
Development
Objective specification
This data sheet contains the design target or goal specifications for product development. Specification may
change in any manner without notice.
Preliminary specification Qualification
This data sheet contains preliminary data, and supplementary data will be published at a later date. Philips
Semiconductors reserves the right to make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors reserves the right to make changes at any
time without notice in order to improve design and supply the best possible product.
[1]
Please consult the most recently issued data sheet before initiating or completing a design.
12. Definitions
13. Disclaimers
Short-form specification — The data in
extracted from a full data sheet with the same type number and title. For
detailed information see the relevant data sheet or data handbook.
a
short-form specification is
Life support — These products are not designed for use in life support
appliances, devices, or systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips Semiconductors
customers using or selling these products for use in such applications do so
at their own risk and agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition — Limiting values given are in accordance with
the Absolute Maximum Rating System (IEC 60134). Stress above one or
more of the limiting values may cause permanent damage to the device.
These are stress ratings only and operation of the device at these or at any
other conditions above those given in the Characteristics sections of the
specification is not implied. Exposure to limiting values for extended periods
may affect device reliability.
Right to make changes — Philips Semiconductors reserves the right to
make changes, without notice, in the products, including circuits, standard
cells, and/or software, described or contained herein in order to improve
design and/or performance. Philips Semiconductors assumes no
responsibility or liability for the use of any of these products, conveys no
licence or title under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that these products
are free from patent, copyright, or mask work right infringement, unless
otherwise specified.
Application information — Applications that are described herein for any
of these products are for illustrative purposes only. Philips Semiconductors
make no representation or warranty that such applications will be suitable for
the specified use without further testing or modification.
9397 750 07325
© Philips Electronics N.V. 2000 All rights reserved.
Product specification
Rev. 01 — 13 September 2000
11 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
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(SCA70)
9397 750 07325
© Philips Electronics N.V. 2000. All rights reserved.
Product specification
Rev. 01 — 13 September 2000
12 of 13
PHB160N03T
N-channel enhancement mode field-effect transistor
Philips Semiconductors
Contents
1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
2
3
4
5
6
7
7.1
8
9
10
11
12
13
© Philips Electronics N.V. 2000.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 13 September 2000
Document order number: 9397 750 07325
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