PHC2300/T3 [NXP]
TRANSISTOR 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal;
| 型号： | PHC2300/T3 |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR 340 mA, 300 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal 开关 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PHC2300
SO8
Complementary enhancement mode MOS transistors
Rev. 05 — 24 February 2011
Product data sheet
1. Product profile
1.1 General description
One N-channel and one P-channel enhancement mode Field-Effect Transistor (FET) in a
plastic package. This product is designed and qualified for use in computing,
communications, consumer and industrial applications only.
1.2 Features and benefits
Suitable for high frequency
applications due to fast switching
characteristics
1.3 Applications
High-speed line drivers
Line transformer drivers
Relay drivers
Universal line interface in telephone
sets
1.4 Quick reference data
Table 1.
Symbol
VDS
Quick reference data
Parameter
Conditions
Min Typ Max Unit
drain-source
voltage
Tj ≥ 25 °C; Tj ≤ 150 °C;
N-channel
-
-
300
V
Tj ≥ 25 °C; Tj ≤ 150 °C;
-
-
-300
V
P-channel
[1]
[1]
[2]
ID
drain current
Tsp = 80 °C; N-channel
Tsp = 80 °C; P-channel
Tsp = 80 °C
-
-
-
-
-
-
340 mA
-235 mA
Ptot
total power
dissipation
1.6
W
Static characteristics
RDSon drain-source
VGS = 10 V; ID = 170 mA;
Tj = 25 °C; N-channel
-
-
-
-
6
Ω
Ω
on-state
resistance
VGS = -10 V; ID = -115 mA;
17
Tj = 25 °C; P-channel
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
Table 1.
Symbol
Dynamic characteristics
Quick reference data …continued
Parameter Conditions
Min Typ Max Unit
QGD
gate-drain charge VGS = -10 V; ID = -115 mA;
VDS = -50 V; Tj = 25 °C;
-
-
674
-
pC
pC
P-channel
V
V
GS = 10 V; ID = 170 mA;
DS = 50 V; Tj = 25 °C;
1385 -
N-channel
[1] Solder point temperature is the temperature at the soldering point of the drain leads.
[2] Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the
same time).
2. Pinning information
Table 2.
Pinning information
Symbol Description
Pin
1
Simplified outline
Graphic symbol
S1
G1
S2
G2
D2
D2
D1
D1
source1
gate1
8
5
4
D1 D1 D2 D2
2
3
source2
gate2
4
5
drain2
drain2
drain1
drain1
1
S1 G1 S2 G2
sym114
6
SOT96-1 (SO8)
7
8
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
SO8
Description
Version
PHC2300
plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
2 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
300
-300
20
Unit
V
VDS
drain-source voltage
Tj ≥ 25 °C; Tj ≤ 150 °C; N-channel
Tj ≥ 25 °C; Tj ≤ 150 °C; P-channel
-
-
V
VGS
ID
gate-source voltage
drain current
-20
V
[1]
[1]
[2]
[2]
[3]
[4]
[5]
[6]
Tsp = 80 °C; N-channel
Tsp = 80 °C; P-channel
Tsp = 25 °C; pulsed; N-channel
Tsp = 25 °C; pulsed; P-channel
Tsp = 80 °C
-
340
-235
1.4
mA
mA
A
-
IDM
peak drain current
-
-
-0.9
1.6
A
Ptot
total power dissipation
-
W
W
W
W
°C
°C
Tamb = 25 °C
-
1.8
Tamb = 25 °C
-
0.9
Tamb = 25 °C
-
1.2
Tstg
Tj
storage temperature
junction temperature
-55
-55
150
150
[1] Solder point temperature is the temperature at the soldering point of the drain leads.
[2] Pulse width and duty cycle limited by maximum junction temperature.
[3] Maximum permissible dissipation per MOS transistor (both devices may thus be loaded up to 1.6 W at the same time).
[4] Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth(a-tp) (ambient to tie-point) of
27.5 K/W.
[5] Maximum permissible dissipation per MOS transistor. Value based on a printed-circuit board with an Rth(a-tp) (ambient to tie-point) of 90
K/W.
[6] Maximum permissible dissipation if only one MOS transistor dissipates. Value based on a printed-circuit board with an Rth(a-tp) (ambient
to tie-point) of 90 K/W.
mda235
mda240
2
10
P
tot
I
D
(W)
1.6
(A)
1
(1)
1.2
0.8
−1
10
t
p
P
δ =
T
DC
−
2
3
10
10
0.4
0
t
t
p
T
−
2
3
0
40
80
120
160
10
10
10
1
T
(°C)
s
V
DS
(V)
δ = 0.01; Tsp = 80 °C.
(1) RDSon limitation.
Fig 1. Power derating curve
Fig 2. SOAR; N-channel
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
3 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mgl245
−10
I
D
(A)
−1
(1)
−1
−10
t
p
P
δ =
T
DC
−2
−10
−10
t
t
p
T
−3
2
3
−10
−10
−10
−1
V
DS
(V)
δ = 0.01; Tsp = 80 °C.
(1) RDSon limitation.
Fig 3. SOAR; P-channel
5. Thermal characteristics
Table 5.
Symbol
Rth(j-sp)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from
junction to solder point
-
-
43
K/W
mda244
2
10
(1)
(2)
(3)
R
(K/W)
th js
(4)
(5)
10
(6)
(7)
t
p
(8)
(9)
P
1
δ =
T
(10)
t
t
p
T
p
−1
10
10
−6
−5
−4
−3
−2
−1
10
10
10
10
10
1
t
(s)
(1) δ = 1.00. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2.
(6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0.
Fig 4. Transient thermal resistance from junction to soldering point as a function of pulse time for N- and
P-channel; typical values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
4 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
VGS(th)
IDSS
drain-source
breakdown voltage
ID = -10 µA; VGS = 0 V; Tj = 25 °C;
P-channel
-300
-
-
-
-
-
-
-
-
-
-
-
-
-
V
ID = 10 µA; VGS = 0 V; Tj = 25 °C;
N-channel
300
-
V
gate-source threshold ID = 1 mA; VDS = VGS; Tj = 25 °C;
voltage
0.8
2
V
N-channel
ID = -1 mA; VDS = VGS; Tj = 25 °C;
P-channel
-0.8
-2
V
drain leakage current
VDS = -240 V; VGS = 0 V; Tj = 25 °C;
P-channel
-
-
-
-
-
-
-
-
-100
100
100
100
100
100
6
nA
nA
nA
nA
nA
nA
Ω
V
DS = 240 V; VGS = 0 V; Tj = 25 °C;
N-channel
IGSS
gate leakage current
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
N-channel
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
N-channel
VGS = 20 V; VDS = 0 V; Tj = 25 °C;
P-channel
VGS = -20 V; VDS = 0 V; Tj = 25 °C;
P-channel
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 170 mA; Tj = 25 °C;
N-channel
VGS = -10 V; ID = -115 mA; Tj = 25 °C;
P-channel
17
Ω
Dynamic characteristics
QG(tot)
total gate charge
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
-
-
-
6240
2137
226
-
-
-
pC
pC
pC
ID = -115 mA; VDS = -50 V; VGS = -10 V;
Tj = 25 °C; P-channel
QGS
QGD
Ciss
gate-source charge
gate-drain charge
input capacitance
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
ID = -115 mA; VDS = -50 V; VGS = -10 V;
Tj = 25 °C; P-channel
-
-
-
68
-
-
-
pC
pC
pC
674
1385
ID = 170 mA; VDS = 50 V; VGS = 10 V;
Tj = 25 °C; N-channel
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel
-
-
-
-
102
45
-
-
-
-
pF
pF
pF
pF
VDS = -50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; P-channel
Coss
output capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel
15
VDS = -50 V; VGS = 0 V; f = 1 MHz;
15
Tj = 25 °C; P-channel
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
5 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
Table 6.
Symbol
Crss
Characteristics …continued
Parameter
Conditions
Min
Typ
Max
Unit
reverse transfer
capacitance
VDS = 50 V; VGS = 0 V; f = 1 MHz;
Tj = 25 °C; N-channel
-
7.3
-
pF
V
DS = -50 V; VGS = 0 V; f = 1 MHz;
-
-
-
-
-
3
-
pF
ns
ns
ns
ns
Tj = 25 °C; P-channel
ton
turn-on time
turn-off time
VDS = 50 V; VGS = 10 V; ID = 170 mA;
Tj = 25 °C; N-channel
7
12
10
65
35
VDS = -50 V; VGS = -10 V; ID = -115 mA;
Tj = 25 °C; P-channel
4
toff
VDS = 50 V; VGS = 10 V; Tj = 25 °C;
ID = 170 mA; N-channel
53
25
VDS = -50 V; VGS = -10 V; Tj = 25 °C;
ID = -115 mA; P-channel
mld841
mbh441
1200
−800
5 V
V
= 10 V
GS
I
D
V
GS
= −10 V
I
D
4 V
(mA)
(mA)
3.5 V
−600
3 V
−4.5 V
−4.0 V
800
−400
−3.5 V
−3.0 V
400
2.5 V
−200
−2.5 V
−2.0 V
2 V
(V)
0
0
0
4
8
12
0
−2
−4
−6
−8
−10
V
−12
(V)
V
DS
DS
Tamb = 25 °C; tp = 80 μs; δ = 0.
Tamb = 25 °C; tp = 80 μs; δ = 0.
Fig 6. Output characteristics: drain current as a
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; N-channel;
typical values
function of drain-source voltage; P-channel;
typical values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
6 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mld842
mbh440
−800
1200
I
D
I
D
(mA)
(mA)
−600
800
−400
−200
0
400
0
0
2
4
6
8
10
(V)
0
−2
−4
−6
−8
−10
(V)
V
GS
V
GS
VDS = 10 V; Tamb = 25 °C; tp = 80 μs; δ = 0.
VDS = -10 V; Tamb = 25 °C; tp = 80 μs; δ = 0.
Fig 7. Transfer characteristics: drain current as a
function of gate-source voltage; N-channel;
typical values
Fig 8. Transfer characteristics: drain current as a
function of gate-source voltage; P-channel;
typical values
mld844
mld843
50
200
12
V
DS
C
(pF)
V
GS
(V)
(V)
37.5
150
8
4
0
C
iss
25
100
50
0
(1)
(2)
12.5
0
C
oss
C
rss
0
5
10
15
20
V
25
(V)
0
1560
3120
4680
6240
(pC)
Q
DS
G
V
DS = 50 V; ID = 170 mA; Tamb = 25 °C.
(1) VDS
(2) VGS
Fig 9. Input, output and reverse transfer capacitances Fig 10. Gate-source voltage and drain-source voltage
as a function of drain-source voltage;
N-channel; typical values
as a function of gate charge; N-channel typical
values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
7 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mld845
mda239
50
12
−0.5
I
SD
V
DS
V
(A)
GS
(V)
(V)
−0.4
37.5
8
−0.3
−0.2
−0.1
0
25
(1)
(2)
4
12.5
0
0
0
535
1070
1605
2140
(pC)
0
−0.4
−0.8
−1.2
V
(V)
SD
Q
G
VDS = -50 V; ID = -115 mA; Tamb = 25 °C.
(1) VDS
(2) VGS
Fig 11. Gate-source voltage and drain-source voltage
as a function of gate charge; P-channel typical
values
Fig 12. Source current as a function of source-drain
voltage; P-channel typical values
mld846
mda233
2
2
10
10
(1)
(2)
(3)
(1)
(2)
(3)
(4)
(5)
R
DSon
(4)
(5)
R
(Ω)
DSon
(Ω)
10
10
1
1
0
2
4
6
8
10
(V)
0
−2
−4
−6
−8
V
−10
(V)
V
GS
GS
VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0.
(1) ID = 10 mA.
VDS ≥ ID X RDSon; Tamb = 25 °C; tp = 300 μs; δ = 0.
(1) ID = -10 mA.
(2) ID = 20 mA.
(2) ID = -20 mA.
(3) ID = 50 mA.
(3) ID = -50 mA.
(4) ID = 100 mA.
(4) ID = -100 mA.
(5) ID = 200 mA.
(5) ID = -200 mA.
Fig 13. Drain-source on-state resistance as a function
of gate-source voltage; N-channel typical
values
Fig 14. Drain-source on-state resistance as a function
of gate-source voltage; P-channel typical
values
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
8 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
mld847
mda238
0.5
1.25
I
SD
k
(A)
0.4
1
0.3
0.2
0.75
0.5
0.1
0
0.25
0
0
0.2
0.4
0.6
0.8
V
1
−50
0
50
100
150
T (°C)
j
(V)
SD
VDS = VGS; ID = 1 mA.
Fig 15. Source-drain current as a function of
source-drain diode voltage; N-channel; typical
values
Fig 16. Temperature coefficient of gate-source
threshold voltage as a function temperature;
N-channel; typical values
mda236
mbh438
160
1.4
C
(pF)
k
120
80
1.2
1.0
0.8
0.6
C
C
iss
40
0
oss
rss
C
−75
−25
25
75
125
175
T (°C)
j
0
−5
−10
−15
−20
−25
(V)
DS
V
V
DS = VGS; ID = -1 mA.
Fig 17. Temperature coefficient of gate-source
threshold voltage as a function temperature;
P-channel; typical values
Fig 18. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PHC2300
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
9 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
7. Package outline
SO8: plastic small outline package; 8 leads; body width 3.9 mm
SOT96-1
D
E
A
X
v
c
y
H
M
A
E
Z
5
8
Q
A
2
A
(A )
3
A
1
pin 1 index
θ
L
p
L
1
4
e
w
M
detail X
b
p
0
2.5
5 mm
scale
DIMENSIONS (inch dimensions are derived from the original mm dimensions)
A
(1)
(1)
(2)
UNIT
A
A
A
b
c
D
E
e
H
L
L
p
Q
v
w
y
Z
θ
1
2
3
p
E
max.
0.25
0.10
1.45
1.25
0.49
0.36
0.25
0.19
5.0
4.8
4.0
3.8
6.2
5.8
1.0
0.4
0.7
0.6
0.7
0.3
mm
1.27
0.05
1.05
0.041
1.75
0.25
0.01
0.25
0.01
0.25
0.1
8o
0o
0.010 0.057
0.004 0.049
0.019 0.0100 0.20
0.014 0.0075 0.19
0.16
0.15
0.244
0.228
0.039 0.028
0.016 0.024
0.028
0.012
inches 0.069
0.01 0.004
Notes
1. Plastic or metal protrusions of 0.15 mm (0.006 inch) maximum per side are not included.
2. Plastic or metal protrusions of 0.25 mm (0.01 inch) maximum per side are not included.
REFERENCES
OUTLINE
EUROPEAN
PROJECTION
ISSUE DATE
VERSION
IEC
JEDEC
JEITA
99-12-27
03-02-18
SOT96-1
076E03
MS-012
Fig 19. Package outline SOT96-1 (SO8)
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
10 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
8. Revision history
Table 7.
Revision history
Document ID
PHC2300 v.5
Modifications:
PHC2300 v.4
Release date
Data sheet status
Change notice
Supersedes
20110224
Product data sheet
-
PHC2300 v.4
• Various changes to content.
20101216 Product data sheet
-
PHC2300 v.3
PHC2300
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© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
11 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
9. Legal information
9.1 Data sheet status
Document status [1] [2]
Product status [3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
9.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
9.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
PHC2300
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
12 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
non-automotive qualified products in automotive equipment or applications.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
10. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PHC2300
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 05 — 24 February 2011
13 of 14
PHC2300
NXP Semiconductors
Complementary enhancement mode MOS transistors
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .3
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2011.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 24 February 2011
Document identifier: PHC2300
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