PHP26N10E [NXP]
PowerMOS transistor; 功率MOS晶体管
| 型号： | PHP26N10E |
| 厂家： | 
NXP |
| 描述： | PowerMOS transistor |
| 文件： | 总7页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
SYMBOL
PARAMETER
MAX.
UNIT
plastic envelope featuring
high
VDS
ID
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state resistance
100
26
125
0.08
V
A
W
Ω
avalanche energy capability, stable
blocking voltage, fast switching and
high thermal cycling performance
withlowthermalresistance. Intended
for use in Switched Mode Power
Supplies (SMPS), motor control
circuits and general purpose
switching applications.
Ptot
RDS(ON)
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
1
DESCRIPTION
d
tab
gate
2
drain
g
3
source
tab drain
1 2 3
s
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
ID
Continuous drain current
Tmb = 25 ˚C; VGS = 10 V
Tmb = 100 ˚C; VGS = 10 V
Tmb = 25 ˚C
-
-
-
-
-
-
-
26
18
104
125
0.833
± 30
230
A
A
IDM
PD
Pulsed drain current
Total dissipation
A
Tmb = 25 ˚C
W
∆PD/∆Tmb Linear derating factor
Tmb > 25 ˚C
W/K
V
VGS
EAS
Gate-source voltage
Single pulse avalanche
energy
V
DD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
DD ≤ 50 V; starting Tj = 25˚C; RGS = 50 Ω;
VGS = 10 V
mJ
IAS
Peak avalanche current
V
-
26
A
Tj, Tstg
Operating junction and
storage temperature range
- 55
175
˚C
THERMAL RESISTANCES
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
Rth j-mb
Rth j-a
Thermal resistance junction to
-
-
-
1.2
-
K/W
K/W
mounting base
Thermal resistance junction to
ambient
60
February 1997
1
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
ELECTRICAL CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V; ID = 0.25 mA
100
-
-
-
-
V
∆V(BR)DSS
∆Tj
/
Drain-source breakdown
voltage temperature coefficient
Drain-source on resistance
Gate threshold voltage
Forward transconductance
Drain-source leakage current
VDS = VGS; ID = 0.25 mA
0.15
V/K
RDS(ON)
VGS(TO)
gfs
VGS = 10 V; ID = 17 A
VDS = VGS; ID = 0.25 mA
VDS = 50 V; ID = 17 A
VDS = 100 V; VGS = 0 V
VDS = 80 V; VGS = 0 V; Tj = 150 ˚C
VGS = ±30 V; VDS = 0 V
-
2.0
8.7
-
-
-
0.07
3.0
16
1
100
10
0.08
4.0
-
25
250
100
Ω
V
S
µA
µA
nA
IDSS
IGSS
Gate-source leakage current
Qg(tot)
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
ID = 17 A; VDD = 80 V; VGS = 10 V
-
-
-
35
7
17
45
9
25
nC
nC
nC
td(on)
tr
td(off)
tf
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
VDD = 50 V; ID = 17 A;
RG = 9.1 Ω; RD = 2.9 Ω
-
-
-
-
18
40
125
50
-
-
-
-
ns
ns
ns
ns
Ld
Ld
Ls
Internal drain inductance
Internal drain inductance
Internal source inductance
Measured from contact screw on
tab to centre of die
Measured from drain lead 6 mm
from package to centre of die
Measured from source lead 6 mm
from package to source bond pad
-
-
-
3.5
4.5
7.5
-
-
-
nH
nH
nH
Ciss
Coss
Crss
Input capacitance
Output capacitance
Feedback capacitance
VGS = 0 V; VDS = 25 V; f = 1 MHz
-
-
-
1650
350
100
-
-
-
pF
pF
pF
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Tj = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
MIN. TYP. MAX. UNIT
IS
Continuous source current
Tmb = 25˚C
-
-
26
A
(body diode)
ISM
Pulsed source current (body
diode)
Diode forward voltage
Tmb = 25˚C
-
-
104
A
VSD
trr
IS = 28 A; VGS = 0 V
-
-
-
1.7
-
V
Reverse recovery time
IS = 17 A; VGS = 0 V;
dI/dt = 100 A/µs
90
ns
Qrr
Reverse recovery charge
-
0.8
-
µC
February 1997
2
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
Normalised Power Derating
PD%
120
Zth j-mb / (K/W)
10
1
110
100
90
80
70
60
50
40
30
20
10
0
D =
0.5
0.2
0.1
0.05
0.1
0.02
t
p
0.01
t
p
P
D
D =
0
T
t
T
0.001
0
20
40
60
80
Tmb /
100 120 140 160 180
C
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Fig.1. Normalised power dissipation.
PD% = 100 PD/PD 25 ˚C = f(Tmb)
Fig.4. Transient thermal impedance.
Zth j-mb = f(t); parameter D = tp/T
Normalised Current Derating
ID%
ID / A
120
110
100
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
20
15
10
8
7
6
VGS / V =
5
4
0
20
40
60
80
100 120 140 160 180
0
2
4
6
8
10
Tmb /
C
VDS / V
Fig.2. Normalised continuous drain current.
ID% = 100 ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 10 V
Fig.5. Typical output characteristics.
ID = f(VDS); parameter VGS
ID / A
RDS(ON) / Ohm
1000
100
10
0.5
0.4
0.3
0.2
0.1
0
5
5.5
4.5
6
A
B
VGS / V =
6.5
tp = 10 us
100 us
1 ms
RDS(ON) = VDS/ID
7
7.5
10
DC
10 ms
20
100 ms
1
1
100
10
1000
0
20
40
VDS / V
ID / A
Fig.3. Safe operating area. Tmb = 25 ˚C
ID & IDM = f(VDS); IDM single pulse; parameter tp
Fig.6. Typical on-state resistance.
RDS(ON) = f(ID); parameter VGS
February 1997
3
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
VGS(TO) / V
ID / A
50
150
max.
4
3
2
1
0
25
Tj / C =
40
typ.
30
20
10
0
min.
-60
-20
20
60
Tj /
100
140
180
0
2
4
6
8
10
C
VGS / V
Fig.7. Typical transfer characteristics.
ID = f(VGS); parameter Tj
Fig.10. Gate threshold voltage.
VGS(TO) = f(Tj); conditions: ID = 0.25 mA; VDS = VGS
SUB-THRESHOLD CONDUCTION
ID / A
gfs / S
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
15
10
5
2 %
typ
98 %
0
0
1
2
3
4
0
20
40
VGS / V
ID / A
Fig.8. Typical transconductance.
gfs = f(ID); parameter Tj
Fig.11. Sub-threshold drain current.
ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS
Normalised RDS(ON) = f(Tj)
a
C / pF
Ciss
2.4
10000
1000
100
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
Coss
Crss
10
-60
-20
20
60
Tj /
100
140
180
0
20
40
C
VDS / V
Fig.9. Normalised drain-source on-state resistance.
a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 17 A; VGS = 10 V
Fig.12. Typical capacitances, Ciss, Coss, Crss.
C = f(VDS); conditions: VGS = 0 V; f = 1 MHz
February 1997
4
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
EAS, Normalised unclamped inductive energy (%)
VGS / V
12
VDS / V =20
80
120
110
100
90
80
70
60
50
40
30
20
10
0
10
8
6
4
2
0
0
10
20
QG / nC
30
20
40
60
80
100 120 140 160 180
Starting Tj ( C)
Fig.13. Typical turn-on gate-charge characteristics.
VGS = f(QG); parameter VDS
Fig.16. Normalised unclamped inductive energy.
EAS% = f(Tj)
Normalised Drain-source breakdown voltage
V(BR)DSS @ Tj
1.15
VDD
V(BR)DSS @ 25 C
1.1
+
L
VDS
1.05
1
-
VGS
-ID/100
T.U.T.
0
0.95
0.9
R 01
RGS
shunt
0.85
-100
-50
0
50
100
150
Tj, Junction temperature (C)
Fig.17. Unclamped inductive test circuit.
Fig.14. Normalised drain-source breakdown voltage.
V(BR)DSS/V(BR)DSS 25 ˚C = f(Tj)
EAS = 0.5 LID2 V(BR)DSS/(V(BR)DSS − VDD
)
IF / A
60
50
40
30
20
10
0
Tj / C = 150
25
0
1
2
VSDS / V
Fig.15. Source-Drain diode characteristic.
IF = f(VSDS); parameter Tj
February 1997
5
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
1 2 3
max
(2x)
0,9 max (3x)
0,6
2,4
2,54 2,54
Fig.18. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Refer to mounting instructions for SOT78 (TO220) envelopes.
3. Epoxy meets UL94 V0 at 1/8".
February 1997
6
Rev 1.000
Philips Semiconductors
Product specification
PowerMOS transistor
PHP26N10E
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
February 1997
7
Rev 1.000
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