PHP54N06T,127 [NXP]
PHP54N06T - N-channel TrenchMOS standard level FET TO-220 3-Pin;型号: | PHP54N06T,127 |
厂家: | NXP |
描述: | PHP54N06T - N-channel TrenchMOS standard level FET TO-220 3-Pin 局域网 开关 脉冲 晶体管 |
文件: | 总12页 (文件大小:208K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
PHP54N06T
N-channel TrenchMOS standard level FET
Rev. 02 — 14 December 2009
Product data sheet
1. Product profile
1.1 General description
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic
package using TrenchMOS technology. This product is designed and qualified for use in
computing, communications, consumer and industrial applications only.
1.2 Features and benefits
Low conduction losses due to low
Suitable for thermally demanding
on-state resistance
environments due to 175 °C rating
1.3 Applications
DC-to-DC convertors
Switched-mode power supplies
1.4 Quick reference data
Table 1.
Quick reference
Symbol Parameter
Conditions
drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C
Min
Typ
Max Unit
VDS
ID
-
-
-
-
55
54
V
A
drain current
Tmb = 25 °C; VGS = 10 V;
see Figure 1 and 3
Ptot
total power
dissipation
Tmb = 25 °C; see Figure 2
-
-
-
118
-
W
Dynamic characteristics
QGD gate-drain charge
VGS = 10 V; ID = 40 A;
VDS = 44 V; Tj = 25 °C;
see Figure 13
11.5
nC
Static characteristics
RDSon
drain-source
on-state resistance
VGS = 10 V; ID = 25 A;
Tj = 175 °C; see Figure 11 and 12
-
-
-
40
20
mΩ
mΩ
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
17
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
2. Pinning information
Table 2.
Pinning information
Pin
1
Symbol Description
Simplified outline
Graphic symbol
G
D
S
D
gate
mb
D
2
drain
source
3
G
mb
mounting base; connected to
drain
mbb076
S
1
2 3
SOT78 (TO-220AB)
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PHP54N06T
TO-220AB
plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead SOT78
TO-220AB
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VDS
Parameter
Conditions
Min
Max
55
Unit
V
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
Tj ≥ 25 °C; Tj ≤ 175 °C
RGS = 20 kΩ
-
VDGR
VGS
-
55
V
-20
20
V
ID
VGS = 10 V; Tmb = 100 °C; see Figure 1
VGS = 10 V; Tmb = 25 °C; see Figure 1 and 3
tp ≤ 10 µs; pulsed; Tmb = 25 °C; see Figure 3
-
38
A
-
54
A
IDM
Ptot
Tstg
Tj
peak drain current
-
217
118
175
175
A
total power dissipation Tmb = 25 °C; see Figure 2
storage temperature
-
W
°C
°C
-55
-55
junction temperature
Source-drain diode
IS
source current
peak source current
Tmb = 25 °C
-
-
54
A
A
ISM
tp ≤ 10 µs; pulsed; Tmb = 25 °C
217
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C; ID = 48 A; Vsup ≤ 55 V;
-
115
mJ
drain-source avalanche unclamped; RGS = 50 Ω
energy
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
2 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa24
03na19
120
120
I
P
der
der
(%)
(%)
80
80
40
40
0
0
0
50
100
150
200
0
50
100
150
200
T
mb
(°C)
T
mb
(°C)
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
Fig 1. Normalized continuous drain current as a
function of mounting base temperature
03nc66
3
10
I
D
(A)
R
DSon
= V /I
DS D
2
10
t = 10 μs
p
100 μs
t
p
P
δ =
10
1 ms
T
D.C.
10 ms
100 ms
t
t
p
T
1
2
1
10
10
V
DS
(V)
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
3 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
5. Thermal characteristics
Table 5.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
thermal resistance from junction to
mounting base
see Figure 4
-
-
1.2
K/W
Rth(j-a)
thermal resistance from junction to
ambient
vertical in still air
-
-
60
K/W
03nc67
10
Z
th(j-mb)
(K/W)
1
δ = 0.5
0.2
0.1
−1
−2
−3
10
10
10
0.05
0.02
t
p
P
δ =
T
Single Shot
t
t
p
T
−6
−5
−4
−3
−2
−1
10
10
10
10
10
10
1
t
p
(s)
Fig 4. Transient thermal impedance from junction to solder point as a function of pulse duration
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
4 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
6. Characteristics
Table 6.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics
V(BR)DSS
drain-source
breakdown voltage
ID = 0.25 mA; VGS = 0 V; Tj = -55 °C
ID = 0.25 mA; VGS = 0 V; Tj = 25 °C
50
55
1
-
-
-
V
-
-
V
VGS(th)
gate-source threshold ID = 1 mA; VDS= VGS; Tj = 175 °C; see Figure 10
voltage
-
-
V
ID = 1 mA; VDS= VGS; Tj = -55 °C; see Figure 10
-
4.4
4
V
ID = 1 mA; VDS= VGS; Tj = 25 °C; see Figure 10
2
-
3
V
IDSS
drain leakage current
gate leakage current
VDS = 55 V; VGS = 0 V; Tj = 25 °C
VDS = 55 V; VGS = 0 V; Tj = 175 °C
VGS = 20 V; VDS = 0 V; Tj = 25 °C
VGS = -20 V; VDS = 0 V; Tj = 25 °C
0.05
10
500
100
100
40
µA
µA
nA
nA
mΩ
-
-
IGSS
-
2
2
-
-
RDSon
drain-source on-state
resistance
VGS = 10 V; ID = 25 A; Tj = 175 °C;
see Figure 11 and 12
-
VGS = 10 V; ID = 25 A; Tj = 25 °C;
see Figure 11 and 12
-
17
20
mΩ
Dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
ID = 40 A; VDS = 44 V; VGS = 10 V; Tj = 25 °C;
see Figure 13
-
-
-
-
-
-
36
-
nC
nC
nC
pF
pF
pF
8.4
-
11.5
1200
290
179
-
VDS = 25 V; VGS = 0 V; f = 1 MHz; Tj = 25 °C;
see Figure 14
1592
356
240
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 30 V; RL = 1.2 Ω; VGS = 10 V;
RG(ext) = 10 Ω; Tj = 25 °C
-
-
-
-
-
15
74
70
40
4.5
-
-
-
-
-
ns
ns
ns
ns
nH
turn-off delay time
fall time
LD
internal drain
inductance
from drain lead 6 mm from package to centre of
die; Tj = 25 °C
from contact screw on mounting base to centre
of die; Tj = 25 °C
-
-
3.5
7.5
-
-
nH
nH
LS
internal source
inductance
from source lead to source bond pad; Tj = 25 °C
Source-drain diode
VSD
trr
source-drain voltage
IS = 20 A; VGS = 0 V; Tj = 25 °C; see Figure 15
-
-
-
0.85
45
1.2
V
reverse recovery time
recovered charge
IS = 20 A; dIS/dt = -100 A/µs; VGS = -10 V;
VDS = 30 V; Tj = 25 °C
-
-
ns
nC
Qr
110
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
5 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03nc63
03nc62
200
30
I
D
V
GS
(V) =
(A)
20
R
180
160
140
120
100
80
DSon
(mΩ)
14
12
11
25
10
9.0
8.5
8.0
7.5
7.0
20
15
10
60
6.5
40
6.0
5.5
5.0
4.5
20
0
0
2
4
6
8
10
5
10
15
20
25
V
(V)
V
(V)
DS
GS
Fig 5. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig 6. Drain-source on-state resistance as a function
of drain current; typical values
03aa35
03nc60
−1
25
10
g
I
D
fs
(A)
(S)
20
min
typ
max
−2
−3
−4
−5
−6
10
10
10
10
10
15
10
5
0
0
2
4
6
0
20
40
60
80
I
D
(A)
V
GS
(V)
Fig 7. Sub-threshold drain current as a function of
gate-source voltage
Fig 8. Forward transconductance as a function of
drain current; typical values
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
6 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
03aa32
03nc61
5
120
I
D
V
GS(th)
(V)
(A)
100
4
3
2
1
0
max
80
60
40
20
0
T = 25 °C
typ
j
T = 175 °C
j
min
0
4
6
8
10
(V)
2
−60
0
60
120
180
V
T (°C)
j
GS
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
Fig 10. Gate-source threshold voltage as a function of
junction temperature
03aa28
03nc64
45
DSon
2.4
R
(mΩ)
a
5.5
6
6.5
7
8
V
(V) = 10
GS
40
1.8
35
30
25
20
15
1.2
0.6
0
0
50
100
150
−60
0
60
120
180
I
D
(A)
T (°C)
j
Fig 11. Drain-source on-state resistance as a function
of drain current; typical values
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
7 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
003aaa068
03nc65
10
2500
C
C
C
,
iss
V
GS
,
oss
(V)
C
iss
rss
V
= 11 V
(pF)
DD
8
6
4
2
2000
1500
1000
500
0
C
oss
V
= 44 V
DD
C
rss
0
−2
−1
2
10
10
1
10
10
0
5
10
15
20
25
30
Q
35
(nC)
40
V
DS
(V)
G
Fig 13. Gate-source voltage as a function of gate
charge; typical values
Fig 14. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
03nc58
120
I
S
(A)
100
80
60
40
20
0
T = 175 °C
j
T = 25 °C
j
0.0
0.5
1.0
1.5
V
SD
(V)
Fig 15. Reverse diode current as a function of reverse diode voltage; typical values
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
8 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
7. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB
SOT78
E
p
A
A
1
q
mounting
D
1
base
D
(1)
(1)
L
1
L
2
Q
(2)
b
1
L
(3×)
(2)
b
2
(2×)
1
2
3
b(3×)
c
e
e
0
5
10 mm
scale
DIMENSIONS (mm are the original dimensions)
(1)
L
2
(2)
(2)
(1)
1
UNIT
mm
A
A
b
b
b
c
D
D
1
E
e
L
L
p
q
Q
1
1
2
max.
4.7
4.1
1.40
1.25
0.9
0.6
1.6
1.0
1.3
1.0
0.7
0.4
16.0
15.2
6.6
5.9
10.3
9.7
15.0 3.30
12.8 2.79
3.8
3.5
3.0
2.7
2.6
2.2
2.54
3.0
Notes
1. Lead shoulder designs may vary.
2. Dimension includes excess dambar.
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
08-04-23
08-06-13
SOT78
SC-46
3-lead TO-220AB
Fig 16. Package outline SOT78 (TO-220AB)
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
9 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
8. Revision history
Table 7.
Revision history
Document ID
PHP54N06T_2
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20091214
Product data sheet
-
PHP54N06T-01
• The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
• Legal texts have been adapted to the new company name where appropriate.
PHP54N06T-01
20010214
Product specification
-
-
(9397 750 08022)
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
10 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
9. Legal information
9.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term 'short data sheet' is explained in section "Definitions".
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product
status information is available on the Internet at URLhttp://www.nxp.com.
Applications— Applications that are described herein for any of these
9.2 Definitions
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Draft— The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Quick reference data— The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Limiting values— Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Short data sheet— A short data sheet is an extract from a full data sheet with
the same product type number(s) and title. A short data sheet is intended for
quick reference only and should not be relied upon to contain detailed and full
information. For detailed and full information see the relevant full data sheet,
which is available on request via the local NXP Semiconductors sales office.
In case of any inconsistency or conflict with the short data sheet, the full data
sheet shall prevail.
Terms and conditions of sale— NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
athttp://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
9.3 Disclaimers
General— Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license— Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes— NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control— This document as well as the item(s) described herein may
be subject to export control regulations. Export might require a prior
authorization from national authorities.
Suitability for use— NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
9.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
TrenchMOS— is a trademark of NXP B.V.
10. Contact information
For more information, please visit:http://www.nxp.com
For sales office addresses, please send an email to:salesaddresses@nxp.com
PHP54N06T_2
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 02 — 14 December 2009
11 of 12
PHP54N06T
NXP Semiconductors
N-channel TrenchMOS standard level FET
11. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . .1
Features and benefits. . . . . . . . . . . . . . . . . . . . .1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Quick reference data . . . . . . . . . . . . . . . . . . . . .1
2
3
4
5
6
7
8
Pinning information. . . . . . . . . . . . . . . . . . . . . . .2
Ordering information. . . . . . . . . . . . . . . . . . . . . .2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2
Thermal characteristics . . . . . . . . . . . . . . . . . . .4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10
9
Legal information. . . . . . . . . . . . . . . . . . . . . . . .11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .11
9.1
9.2
9.3
9.4
10
Contact information. . . . . . . . . . . . . . . . . . . . . .11
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2009.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 14 December 2009
Document identifier: PHP54N06T_2
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