PMBF4392 [NXP]
N-channel FETs; N沟道场效应晶体管
| 型号： | PMBF4392 |
| 厂家： | 
NXP |
| 描述： | N-channel FETs |
| 文件： | 总7页 (文件大小：45K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
PMBF4391;
PMBF4392; PMBF4393
N-channel FETs
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors on a plastic
microminiature envelope intended for
application in thick and thin-film
circuits. The transistors are intended
for low-power chopper or switching
applications in industry.
3
handbook, halfpage
d
g
s
PINNING
1
2
1
2
3
= drain
= source
= gate
Top view
MAM385
Note
1. Drain and source are
interchangeable.
Fig.1 Simplified outline and symbol, SOT23.
Marking code
PMBF4391 = p6J
PMBF4392 = p6K
PMBF4393 = p6G
QUICK REFERENCE DATA
PMBF4391
PMBF4392
PMBF4393
Drain-source voltage
Drain current
± VDS
max.
40
40
40
V
VDS = 20 V; VGS = 0
Gate-source cut-off voltage
IDSS
>
50
25
5
mA
>
<
4
2
5
0.5
3
V
V
V
DS = 20 V; ID = 1 nA
−V(P)GS
10
Drain-source resistance (on) at f = 1 kHz
ID = 0; VGS = 0
Rds on
<
<
30
60
100
3.5
Ω
Feedback capacitance at f = 1 MHz
−VGS = 12 V; VDS = 0
Crs
3.5
3.5
pF
Turn-off time
VDD = 10 V; VGS = 0
ID = 12 mA; −VGSM = 12 V
ID = 6 mA; −VGSM = 7 V
ID = 3 mA; −VGSM = 5 V
toff
toff
toff
<
<
<
20
−
−
−
ns
ns
ns
35
−
−
−
50
April 1995
2
Philips Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Drain-source voltage
± VDS
VDGO
−VGSO
IG
max.
max.
max.
max.
max.
40 V
40 V
Drain-gate voltage
Gate-source voltage
40 V
Gate current (DC)
50 mA
250 mW
Total power dissipation up to Tamb = 40 °C (1)
Storage temperature range
Junction temperature
Ptot
Tstg
−65 to + 150 °C
Tj
max.
150 °C
THERMAL RESISTANCE
From junction to ambient(1)
Rth j-a
=
430 K/W
CHARACTERISTICS
Tj = 25 °C unless otherwise specified
Gate-source voltage
IG = 1 mA; VDS = 0
VGSon
<
1 V
Gate-source cut-off current
V
DS = 0 V; −VGS = 20 V
−IGSS
−IGSS
<
<
0.1 nA
VDS = 0 V; −VGS = 20 V; Tamb = 150 °C
0.2 µA
PMBF4391
PMBF4392
PMBF4393
Drain current
>
<
50
25
75
5 mA
30 mA
VDS = 20 V; VGS = 0
IDSS
150
40
Gate-source breakdown voltage
−IG = 1 µA; VDS = 0
−V(BR)GSS
−V(P)GS
>
40
40 V
Gate-source cut-off voltage
ID = 1 nA; VDS = 20 V
>
<
4
10
2
5
0.5 V
3 V
Drain-source voltage (on)
ID = 12 mA; VGS = 0
VDSon
VDSon
VDSon
<
<
<
0.4
−
−
− V
− V
ID = 6 mA; VGS = 0
0.4
ID = 3 mA; VGS = 0
−
0.4 V
Drain-source resistance (on)
ID = 0; VGS = 0; f = 1 kHz; Tamb = 25 °C
Drain cut-off current
rds on
<
30
−
100 Ω
−VGS = 12 V
IDSX
IDSX
IDSX
IDSX
IDSX
IDSX
<
<
<
<
<
<
0.1
−
−
0.1
−
− nA
− nA
−VGS = 7 V
−VGS = 5 V
−VGS = 12 V
−VGS = 7 V
−VGS = 5 V
VDS = 20 V
−
0.1 nA
− µA
0.2
−
−
VDS = 20 V; Tamb = 150 °C
0.2
−
− µA
−
0.2 µA
April 1995
3
Philips Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
y-parameters (common source)
VDS = 20 V; VGS = 0; f = 1 MHz; Tamb = 25 °C
PMBF4391
PMBF4392
PMBF4393
Input capacitance
Cis
<
14
14
14 pF
Feedback capacitance
−VGS = 12 V ; VDS = 0
−VGS = 7 V ; VDS = 0
−VGS = 5 V ; VDS = 0
Switching times
Crs
Crs
Crs
<
<
<
3.5
−
−
− pF
− pF
3.5
−
−
3.5 pF
VDD = 10 V
; VDS = 0
Conditions ID and −VGSoff
ID
=
=
=
<
<
<
<
12
12
750
5
6
7
3 mA
5 V
−VGS off
RL
tr
1550 3150 Ω
Rise time
5
15
20
35
5 ns
15 ns
30 ns
50 ns
Turn on time
Fall time
ton
tf
15
15
20
Turn off time
toff
Note
1. Mounted on a ceramic substrate of 8 mm × 10 mm × 0,7 mm.
V
V
= 0 V
GS
10%
90%
i
−V
GS off
t
t
on
off
t
t
r
f
90%
10%
V
o
MBK288
Fig.2 Switching times waveforms.
April 1995
4
Philips Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
Pulse generator:
tr
tf
<
<
=
=
0.5 ns
0.5 ns
100 µs
0.01
tp
δ
Oscilloscope:
Ri
1 µF
handbook, halfpage
50 Ω
10 µF
=
50 Ω
V
DD
10 nF
R
L
SAMPLING
SCOPE
50 Ω
DUT
50 Ω
MBK289
Fig.3 Test circuit.
MDA245
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40
80
120
160
200
(°C)
T
amb
Fig.4 Power derating curve.
April 1995
5
Philips Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
6
Philips Semiconductors
Product specification
PMBF4391; PMBF4392;
PMBF4393
N-channel FETs
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
7
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