PMBF5485-T [NXP]
TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal;
| 型号： | PMBF5485-T |
| 厂家： | 
NXP |
| 描述： | TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, FET RF Small Signal 放大器 光电二极管 晶体管 |
| 文件： | 总10页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
PMBF5484;
PMBF5485; PMBF5486
N-channel field-effect transistors
FEATURES
• Low noise
• Interchangeability of drain and
source connections
• High gain.
3
handbook, halfpage
DESCRIPTION
d
g
N-channel, symmetrical, silicon
junction FETs in a surface-mountable
SOT23 envelope. Intended for use in
VHF/UHF amplifiers, oscillators and
mixers.
s
1
2
Top view
MAM385
PINNING - SOT23
PIN
DESCRIPTION
source
Fig.1 Simplified outline and symbol.
1
2
3
drain
gate
QUICK REFERENCE DATA
MARKING CODES:
SYMBOL
PARAMETER
CONDITIONS
MIN. MAX. UNIT
PMBF5484: p6B
PMBF5485: p6M
PMBF5486: p6H
VDS
drain-source
voltage
−
25
V
IDSS
drain current
PMBF5484
PMBF5485
PMBF5486
VDS = 15 V; VGS = 0
1
4
8
−
5
mA
mA
mA
mW
10
20
250
Ptot
total power
dissipation
up to Tamb = 25 °C
VGS(off)
gate-source cut-off VDS = 15 V;
voltage
ID = 1 nA
PMBF5484
−0.3 −3
−0.5 −4
V
V
V
PMBF5485
PMBF5486
−2
−6
Yfs
common source
VDS = 15 V;
transfer admittance VGS = 0; f = 1 kHz
PMBF5484
PMBF5485
PMBF5486
3
6
7
8
mS
mS
mS
3.5
4
April 1995
2
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
VDS
PARAMETER
drain-source voltage
CONDITIONS
MIN.
MAX.
25
UNIT
−
−
−
−
−
V
V
V
VGSO
VGDO
IG
gate-source voltage
gate-drain voltage
−25
−25
10
DC forward gate current
total power dissipation
storage temperature
junction temperature
mA
mW
°C
Ptot
Tstg
Tj
up to Tamb = 25 °C (note 1)
250
+150
150
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-a
from junction to ambient (note 1)
500 K/W
Note
1. Device mounted on an FR4 printed-circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
V(BR)GSS
PARAMETER
CONDITIONS
VDS = 0; IG = −1 µA
VDS = 15 V; VGS = 0
MIN.
−25
MAX.
UNIT
gate-source breakdown voltage
drain current
−
V
IDSS
PMBF5484
1
4
8
−
−
5
mA
mA
mA
nA
V
PMBF5485
10
20
−1
1
PMBF5486
IGSS
reverse gate leakage current
gate-source forward voltage
gate-source cut-off voltage
PMBF5484
VDS = 0; VGS = −15 V
VDS = 0; IG = 1 mA
VDS = 15 V; ID = 1 nA
VGSS
VGS(off)
−0.3
−0.5
−2
−3
−4
−6
V
V
V
PMBF5485
PMBF5486
Yfs
common source transfer admittance
PMBF5484
VDS = 15 V; VGS = 0
3
6
7
8
mS
mS
mS
PMBF5485
3.5
4
PMBF5486
Yos
common source output admittance
PMBF5484
VDS = 15 V; VGS = 0
−
−
−
50
60
75
µS
µS
µS
PMBF5485
PMBF5486
April 1995
3
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
DYNAMIC CHARACTERISTICS
Tj = 25 °C; VDS = 15 V; VGS = 0
SYMBOL
PARAMETER
input capacitance
CONDITIONS
f = 1 MHz
MIN.
TYP. MAX.
UNIT
pF
Cis
Cos
Crs
gis
−
−
5
2
1
output capacitance
f = 1 MHz
f = 1 MHz
−
−
−
−
pF
pF
feedback capacitance
common source input conductance
PMBF5484
f = 100 MHz
f = 400 MHz
100
−
−
−
µS
PMBF5485; PMBF5486
common source transfer conductance
PMBF5484
−
1
mS
gfs
f = 100 MHz
f = 400 MHz
f = 400 MHz
2.5
3
−
−
−
−
1
1
mS
mS
mS
PMBF5485
PMBF5486
3.5
gos
common source output conductance
PMBF5484
f = 100 MHz
f = 400 MHz
f = 100 Hz
−
−
−
−
−
5
75
100
−
µS
PMBF5485; PMBF5486
equivalent input noise voltage
µS
Vn
nV/√Hz
MRC168
MRC169
25
10
handbook, halfpage
handbook, halfpage
I
Y
DSS
fs
(mA)
(mS)
20
8
15
10
5
6
4
2
0
0
0
0
2
4
6
2
4
6
–V
(V)
GS(off)
–V
GS(off)
(V)
VDS = 15 V; Tj = 25 °C; typical values.
VDS = 15 V; Tj = 25 °C; typical values.
Fig.2 Drain current as a function of gate-source
cut-off voltage.
Fig.3 Common source transfer admittance as a
function of gate-source cut-off voltage.
April 1995
4
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC167
MRC170
2
80
handbook, halfpage
handbook, halfpage
I
G
D
os
S)
V
GS
= 0 V
(mA)
µ
(
1.5
60
40
20
0
1
–0.25 V
–0.5 V
0.5
0
0
0
1
2
3
4
5
6
4
8
12
16
V
DS
(V)
–V
(V)
GS(off)
PMBF5484
Tj = 25 °C.
VDS = 15 V; Tj = 25 °C; typical values.
Fig.4 Common source output conductance as a
function of gate-source cut-off voltage.
Fig.5 Typical output characteristics.
MRC171
MRC172
8
8
handbook, halfpage
handbook, halfpage
I
V
= 0 V
I
D
V
= 0 V
D
GS
GS
(mA)
(mA)
6
6
–0.5 V
–1V
4
2
4
2
0
–1 V
–2 V
–1.5 V
0
0
4
8
12
16
V
(V)
0
4
8
12
16
DS
V
(V)
DS
PMBF5485
PMBF5486
Tj = 25 °C.
Tj = 25 °C.
Fig.6 Typical output characteristics.
Fig.7 Typical output characteristics.
April 1995
5
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC173
MRC165
4
10
handbook, halfpage
handbook, halfpage
–I
G
16
(pA)
PMBF5486
3
I
= 1 mA
I
D
D
10
(mA)
2
12
10
10
1
0.1 mA
PMBF5485
PMBF5484
8
4
I
GSS
–1
10
–2
0
–1.6
10
0
4
8
12
16
20
(V)
–1.2
–0.8
–0.4
0
V
(V)
V
GS
DG
VDS = 15 V; Tj = 25 °C.
Tj = 25 °C.
Fig.8 Typical input characteristics.
Fig.9 Gate current as a function of drain-gate
voltage, typical values.
MRC166
MRC158
1
rs
(pF)
300
handbook, halfpage
handbook, halfpage
C
P
tot
(mW)
0.8
200
0.6
0.4
0.2
0
100
0
0
–10
–8
–6
–4
–2
V
0
50
100
150
o
T
( C)
(V)
amb
GS
VDS = 15 V; Tj = 25 °C.
Fig.10 Power derating curve.
Fig.11 Typical feedback capacitance.
April 1995
6
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC157
MRC160
100
3.5
handbook, halfpage
handbook, halfpage
C
is
g
, b
is is
(pF)
3
2.5
2
(mS)
10
b
is
1
0.1
g
is
1.5
1
0.5
0
0.01
10
100
1000
–10
–8
–6
–4
–2
V
0
(V)
f (MHz)
GS
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
VDS = 15 V; Tj = 25 °C.
Fig.12 Typical input capacitance.
Fig.13 Common source input conductance.
MRC159
MRC162
100
100
handbook, halfpage
handbook, halfpage
–g , –b
rs
rs
g
, –b
fs
(mS)
fs
(mS)
10
1
–b
–g
rs
rs
10
g
fs
0.1
–b
fs
1
0.01
0.1
10
0.001
100
1000
10
100
1000
f (MHz)
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
Fig.14 Common source transfer conductance.
Fig.15 Common source feedback conductance.
April 1995
7
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
MRC161
100
handbook, halfpage
g
, b
os os
(mS)
10
b
os
1
0.1
0.01
g
os
10
100
1000
f (MHz)
VDS = 15 V; VGS = 0; Tamb = 25 °C; typical values.
Fig.16 Common source output conductance.
April 1995
8
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
9
Philips Semiconductors
Product specification
PMBF5484; PMBF5485;
PMBF5486
N-channel field-effect transistors
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
10
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