概述
规格参数
数据手册
替代型号PMBFJ110 概述
N-channel junction FETs N沟道FET的结 小信号场效应晶体管
PMBFJ110 规格参数
| 是否无铅： | 不含铅 | 是否Rohs认证： | 符合 |
| 生命周期： | Obsolete | 零件包装代码： | SOT-23 |
| 包装说明： | SMALL OUTLINE, R-PDSO-G3 | 针数： | 3 |
| Reach Compliance Code： | compliant | ECCN代码： | EAR99 |
| HTS代码： | 8541.21.00.95 | 风险等级： | 5.19 |
| Is Samacsys： | N | 配置： | SINGLE |
| 最大漏源导通电阻： | 18 Ω | FET 技术： | JUNCTION |
| 最大反馈电容 (Crss)： | 15 pF | JEDEC-95代码： | TO-236AB |
| JESD-30 代码： | R-PDSO-G3 | JESD-609代码： | e3 |
| 湿度敏感等级： | 1 | 元件数量： | 1 |
| 端子数量： | 3 | 工作模式： | DEPLETION MODE |
| 最高工作温度： | 150 °C | 封装主体材料： | PLASTIC/EPOXY |
| 封装形状： | RECTANGULAR | 封装形式： | SMALL OUTLINE |
| 极性/信道类型： | N-CHANNEL | 最大功率耗散 (Abs)： | 0.25 W |
| 认证状态： | Not Qualified | 表面贴装： | YES |
| 端子面层： | Tin (Sn) | 端子形式： | GULL WING |
| 端子位置： | DUAL | 晶体管应用： | SWITCHING |
| 晶体管元件材料： | SILICON | Base Number Matches： | 1 |
PMBFJ110 数据手册
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PDF下载DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
• Low RDSon at zero gate voltage
( < 8 Ω for PMBFJ108).
3
handbook, halfpage
DESCRIPTION
d
g
s
Symmetrical N-channel junction
FETs in a SOT23 envelope. Intended
for use in applications such as analog
switches, choppers and commutators
and in audio amplifiers.
1
2
Top view
MAM385
PINNING - SOT23
PIN
1
DESCRIPTION
drain
Fig.1 Simplified outline and symbol.
2
source
gate
3
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Drain and source are
interchangeable.
SYMBOL
PARAMETER
drain-source voltage
gate-source voltage
drain-drain voltage
CONDITIONS MIN. MAX. UNIT
VDS
VGSO
VGDO
IG
−
−
−
±25
−25
−25
50
V
V
V
forward gate current
(DC)
mA
Ptot
total power dissipation Tamb = 25°C;
−
250
mW
note 1
Tstg
Tj
storage temperature
−65
150
150
°C
°C
operating junction
temperature
−
April 1995
2
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
THERMAL RESISTANCE
SYMBOL
Rth j-a
Notes
PARAMETER
VALUE
UNIT
from junction to ambient (note 1)
500
K/W
1. Mounted on an FR-4 printboard.
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
−IGSS
PARAMETER
CONDITIONS
−VGS = 15 V
MIN.
MAX.
UNIT
nA
reverse gate current
−
3
VDS = 0
IDSX
IDSS
drain-source cut-off current
VGS = −10 V
−
3
nA
V
DS = 5 V
drain current
VGS = 0
VDS = 15 V
PMBFJ108
80
40
10
−
−
−
mA
PMBFJ109
PMBFJ110
−
−V(BR)GSS
−VGS(off)
gate-source breakdown voltage
−IG = 1 µA
VDS = 0
25
V
V
gate-source cut-off voltage
PMBFJ108
ID = 1 µA
VDS = 5 V
3
2
10
6
PMBFJ109
PMBFJ110
0.5
4
RDS(on)
drain-source on-resistance
PMBFJ108
VGS = 0 V
VDS = 0.1 V
−
−
−
8
12
18
Ω
PMBFJ109
PMBFJ110
April 1995
3
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
DYNAMIC CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
VDS = 0
−VGS = 10 V
f = 1 MHz
TYP.
MAX.
UNIT
pF
Cis
Cis
input capacitance
input capacitance
15
30
VDS = 0
50
8
85
15
pF
pF
−VGS = 0
f = 1 MHz
Tamb = 25 °C
Crs
feedback capacitance
VDS = 0
−VGS = 10 V
f = 1 MHz
Switching times (see Fig.2)
td
delay time
note 1
note 1
note 1
note 1
2
4
4
6
−
−
−
−
ns
ns
ns
ns
ton
ts
turn-on time
storage time
turn-off time
toff
Notes
1. Test conditions for switching times are as follows:
DD = 1.5 V, VGS = 0 to −VGS(off) (all types);
V
−VGS(off) = 12 V, RL = 100 Ω (PMBFJ108);
−VGS(off) = 7 V, RL = 100 Ω (PMBFJ109);
−VGS(off) = 5 V, RL = 100 Ω (PMBFJ110).
V
V
= 0 V
GS
10%
90%
0.1 µF
k, halfpage
50 Ω
10 µF
V
DD
i
10 nF
R
L
−V
GS off
t
t
SAMPLING
SCOPE
50 Ω
off
on
DUT
t
t
t
t
r
s
f
d
50 Ω
90%
10%
V
o
MBK295
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
5
Philips Semiconductors
Product specification
PMBFJ108;
PMBFJ109; PMBFJ110
N-channel junction FETs
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6
PMBFJ110 CAD模型
引脚图
封装焊盘图
PMBFJ110 替代型号
| 型号 | 制造商 | 描述 | 替代类型 | 文档 |
| SST110 | CALOGIC | N-Channel JFET Switch | 功能相似 |
|
| PMBFJ110,215 | NXP | N-channel FET TO-236 3-Pin | 功能相似 |
|
PMBFJ110 相关器件
| 型号 | 制造商 | 描述 | 价格 | 文档 |
| PMBFJ110,215 | NXP | N-channel FET TO-236 3-Pin | 获取价格 |
|
| PMBFJ110-T | NXP | TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ110-TAPE-13 | NXP | TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ110-TAPE-7 | NXP | TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ110T/R | ETC | TRANSISTOR | JFET | N-CHANNEL | 25V V(BR)DSS | 10MA I(DSS) | TO-236 | 获取价格 |
|
| PMBFJ110TRL | NXP | TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ110TRL13 | NXP | TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ111 | NXP | N-channel junction FETs | 获取价格 |
|
| PMBFJ111-T | NXP | TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB, PLASTIC PACKAGE-3, FET General Purpose Small Signal | 获取价格 |
|
| PMBFJ111-TAPE-7 | NXP | TRANSISTOR 40 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, FET General Purpose Small Signal | 获取价格 |
|
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