PMBFJ112 [NXP]
N-channel junction FETs; N沟道FET的结
| 型号： | PMBFJ112 |
| 厂家： | 
NXP |
| 描述： | N-channel junction FETs |
| 文件： | 总6页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
April 1995
Product specification
File under Discrete Semiconductors, SC07
Philips Semiconductors
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
FEATURES
• High-speed switching
• Interchangeability of drain and
source connections
3
handbook, halfpage
• Low RDSon at zero gate voltage
( < 30 Ω for PMBFJ111).
d
g
s
DESCRIPTION
1
2
Symmetrical N-channel junction
FETs in a surface mount SOT23
envelope. Intended for use in
Top view
MAM385
applications such as analog switches,
choppers, commutators, multiplexers
and thin and thick film hybrids.
Fig.1 Simplified outline and symbol.
PINNING - SOT23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
PIN
1
DESCRIPTION
drain
SYMBOL
PARAMETER
drain-source voltage
gate-source voltage
drain-drain voltage
CONDITIONS MIN. MAX. UNIT
2
source
gate
VDS
VGSO
VGDO
IG
−
−
−
−
±40
−40
−40
50
V
3
V
Note
V
1. Drain and source are
interchangeable.
forward gate current
(DC)
mA
Ptot
total power dissipation
Tamb = 25 °C;
−
300
mW
note 1
Tstg
Tj
storage temperature
−65
150
150
°C
°C
operating junction
temperature
−
April 1995
2
Philips Semiconductors
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
THERMAL CHARACTERISTICS
Tj =P(Rth j-t + Rth t−s + Rth s-a) + Tamb
SYMBOL
Rth j-a
PARAMETER
MAX.
430
500
UNIT
K/W
K/W
from junction to ambient (note 1)
from junction to ambient (note 2)
Rth j-a
Notes
1. Mounted on a ceramic substrate, 8 mm × 10 mm × 0.7 mm.
2. Mounted on printed circuit board.
STATIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
−IGSS
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1 nA
reverse gate current
drain current
PMBFJ111
−VGS = 15 V; VDS = 0
−
IDSS
VGS = 0; VDS = 15 V
20
5
− mA
−
PMBFJ112
PMBFJ113
2
−
−V(BR)GSS
−VGS(off)
gate-source breakdown voltage −IG = 1 µA; VDS = 0
40
− V
gate-source cut-off voltage
PMBFJ111
ID = 1 µA; VDS = 5 V
3
1
10 V
PMBFJ112
5
3
PMBFJ113
0.5
RDS(on)
drain-source on-resistance
PMBFJ111
VGS = 0 V; VDS = 0.1 V
−
−
−
30 Ω
PMBFJ112
50
PMBFJ113
100
April 1995
3
Philips Semiconductors
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
DYNAMIC CHARACTERISTICS
Tj = 25 °C.
SYMBOL
Ciss
PARAMETER
CONDITIONS
VDS = 0
TYP.
MAX.
UNIT
pF
input capacitance
6
−
−VGS = 10 V
f = 1 MHz
VDS = 0
22
3
28
pF
pF
−VGS = 0
f = 1 MHz
Tamb = 25 °C
Crss
feedback capacitance
VDS = 0
−
−VGS = 10 V
f = 1 MHz
Switching times (see Fig.2)
tr
rise time
note 1
note 1
note 1
note 1
6
13
15
35
−
−
−
−
ns
ns
ns
ns
ton
tf
turn-on time
fall time
toff
turn-off time
Notes
1. Test conditions for switching times are as follows:
DD = 10 V, VGS = 0 to −VGS(off) (all types);
V
−VGS(off) = 12 V, RL = 750 Ω (PMBFJ111);
−VGS(off) = 7 V, RL = 1550 Ω (PMBFJ112);
−VGS(off) = 5 V, RL = 3150 Ω (PMBFJ113).
V
V
= 0 V
GS
10%
90%
1 µF
ok, halfpage
50 Ω
10 µF
i
V
DD
10 nF
R
−V
L
GS off
t
t
on
off
SAMPLING
SCOPE
50 Ω
t
t
t
t
r
s
f
d
DUT
90%
10%
50 Ω
V
o
MBK289
MBK294
Fig.2 Switching circuit.
Fig.3 Input and output waveforms.
April 1995
4
Philips Semiconductors
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
April 1995
5
Philips Semiconductors
Product specification
PMBFJ111;
PMBFJ112; PMBFJ113
N-channel junction FETs
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
Short-form specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
The data in this specification is extracted from a full data sheet with the same type
number and title. For detailed information see the relevant data sheet or data handbook.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
April 1995
6
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