PMBFJ620,115 [NXP]
PMBFJ620 - Dual N-channel FET TSSOP 6-Pin;
| 型号： | PMBFJ620,115 |
| 厂家： | 
NXP |
| 描述： | PMBFJ620 - Dual N-channel FET TSSOP 6-Pin 放大器 光电二极管 晶体管 |
| 文件： | 总14页 (文件大小：235K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMBFJ620
Dual N-channel field-effect transistor
Rev. 3 — 6 March 2014
Product data sheet
1. Product profile
1.1 General description
Two N-channel symmetrical junction field-effect transistors in a SOT363 package.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
1.2 Features and benefits
Two field effect transistors in a single package
Low noise
Interchangeability of drain and source connections
High gain.
1.3 Applications
AM input stage in car radios
VHF amplifiers
Oscillators and mixers.
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Per FET
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
-
-
-
25
V
V
VGSoff
gate-source cut-off
voltage
VDS = 10 V; ID = 1 A
2
6.5
IDSS
Ptot
drain current
VGS = 0 V; VDS = 10 V
24
-
-
-
60
mA
total power
dissipation
Ts 90 C
190
mW
yfs
forward transfer
admittance
VDS = 10 V;
ID = 10 mA
10
-
-
mS
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
2. Pinning information
Table 2.
Discrete pinning information
Pin
1
Description
source (1)
source (2)
gate (2)
Simplified outline
Symbol
ꢅ
ꢄ
ꢃ
ꢄ
ꢀ
2
ꢅ
ꢁ
3
ꢃ
ꢂ
4
drain (2)
ꢀ
ꢂ
ꢁ
5
drain (1)
V\Pꢀꢁꢂ
6
gate (1)
3. Ordering information
Table 3.
Ordering information
Type number Package
Name
Description
Version
PMBFJ620
-
plastic surface-mounted package; 6 leads
SOT363
4. Marking
Table 4.
Marking
Type number
Marking code [1]
PMBFJ620
A8*
[1] * = p: made in Hong Kong.
* = t: made in Malaysia.
* = W: made in China.
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
2 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Per FET
VDS
Parameter
Conditions
Min
Max
Unit
drain-source voltage
gate-source voltage
gate-drain voltage
-
25
25
25
50
V
VGSO
VGDO
IG
open drain
-
V
open source
-
V
forward gate current (DC)
total power dissipation
storage temperature
junction temperature
-
mA
mW
C
C
Ptot
Ts 90 C
-
190
+150
150
Tstg
65
Tj
-
6. Thermal characteristics
Table 6.
Symbol
Rth(j-s)
Thermal characteristics
Parameter
Conditions
Typ
Unit
[1]
[1]
thermal resistance from junction single loaded
to soldering points
315
160
K/W
K/W
double loaded
[1] Ts is the temperature at the soldering point of the gate pins, see Figure 1.
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(1) Double loaded.
(2) Single loaded.
Fig 1. Power derating curve.
PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
3 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
7. Static characteristics
Table 7.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol
Per FET
V(BR)GSS
Parameter
Conditions
Min
Typ
Max
Unit
gate-source breakdown
voltage
IG = 1 A; VDS = 0 V
25
-
-
V
VGSoff
VGSS
IDSS
gate-source cut-off voltage
gate-source forward voltage
ID = 1 A; VDS = 10 V
2
-
-
6.5
1
V
IG = 1 mA; VDS = 0 V
-
V
drain-source leakage current VDS = 10 V; VGS = 0 V
24
-
-
60
1
-
mA
nA
IGSS
gate-source leakage current
VGS = 15 V; VDS = 0 V
-
RDSon
drain-source on-state
resistance
VGS = 0 V; VDS = 100 mV
-
50
yfs
common source forward
transfer admittance
ID = 10 mA; VDS = 10 V
ID = 10 mA; VDS = 10 V
10
-
-
-
-
mS
yos
common source output
admittance
250
S
8. Dynamic characteristics
Table 8.
Characteristics
Tj = 25 C unless otherwise specified.
Symbol
Per FET
Ciss
Parameter
Conditions
Min
Typ
Max
Unit
input capacitance
VDS = 10 V; VGS = 10 V; f =1 MHz
VDS = 10 V; VGS = 0 V; Tamb = 25 C
-
-
-
-
-
-
-
-
-
-
-
-
3
5
pF
6
-
pF
Crss
gis
reverse transfer capacitance VDS = 0 V; VGS = 10 V; f = 1 MHz
1.3
200
3
2.5
pF
common source input
conductance
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
VDS = 10 V; ID = 10 mA; f = 100 MHz
VDS = 10 V; ID = 10 mA; f = 450 MHz
-
-
-
-
-
-
-
-
-
S
mS
mS
mS
S
gfs
grs
gos
Vn
common source transfer
conductance
13
12
common source reverse
conductance
30
450
150
400
6
S
common source output
conductance
S
S
equivalent input noise voltage VDS = 10 V; ID = 10 mA; f = 100 Hz
nV/Hz
PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
4 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
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VDS = 10 V; Tj = 25 C.
VDS = 10 V; ID = 10 mA; Tj = 25 C.
Fig 2. Drain current as a function of gate-source
cut-off voltage; typical values.
Fig 3. Common source forward transfer admittance
as a function of gate-source cut-off voltage;
typical values.
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VDS = 10 V; ID = 10 mA; Tj = 25 C.
VDS = 100 mV; VGS = 0 V; Tj = 25 C.
Fig 4. Common-source output conductance as a
function of gate-source cut-off voltage; typical
values.
Fig 5. Drain-source on-state resistance as a function
of gate-source cut-off voltage; typical values.
PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
5 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
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Tj = 25 C.
VDS = 10 V; Tj = 25 C.
(1) VGS = 0 V
(2) GS = 0.5 V
V
(3) VGS = 1 V
(4) VGS = 1.5 V
(5)
VGS = 2 V
(6) VGS = 2.5 V
Fig 6. Typical output characteristics.
Fig 7. Typical transfer characteristics.
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VDS = 10 V; Tj = 25 C.
VDS = 10 V; Tj = 25 C.
Fig 8. Reverse transfer capacitance as a function of
gate-source voltage; typical values.
Fig 9. Input capacitance as a function of gate-source
voltage; typical values.
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
6 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
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Fig 10. Drain current as a function of gate-source voltage; typical values.
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Tj = 25 C.
(1) ID = 10 mA
(2)
ID = 1 mA
(3) ID = 100 A
(4) IGSS
Fig 11. Gate current as a function of drain-gate voltage; typical values.
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
7 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
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Fig 12. Gate current as a function of junction temperature; typical values.
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
8 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
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VDS = 10 V; ID = 10 mA; Tamb = 25 C.
VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 13. Input admittance as a function of frequency;
typical values.
Fig 14. Forward transfer admittance as a function of
frequency; typical values.
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VDS = 10 V; ID = 10 mA; Tamb = 25 C.
Fig 15. Reverse transfer admittance as a function of
frequency; typical values.
Fig 16. Output admittance as a function of frequency;
typical values.
PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
9 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
9. Package outline
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PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
10 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
10. Revision history
Table 9.
Revision history
Document ID
PMBFJ620 v.3
Modifications:
Release date
Data sheet status
Change notice
Supersedes
20140306
Product data sheet
-
PMBFJ620 v.2
• Table 5 on page 3: correction parameter VGDO
• Figure 6 on page 6: figure notes list added
• Figure 11 on page 7: figure notes list added
PMBFJ620 v.2
20110915
Product data sheet
-
PMBFJ620 v.1
-
PMBFJ620 v.1
20040511
Product data sheet
-
(9397 750 13006)
PMBFJ620
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© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
11 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
11. Legal information
11.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use — NXP Semiconductors products are not designed,
11.2 Definitions
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
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Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
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Product data sheet.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
11.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
12 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
product for such automotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
non-automotive qualified products in automotive equipment or applications.
11.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
12. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBFJ620
All information provided in this document is subject to legal disclaimers.
© NXP Semiconductors N.V. 2014. All rights reserved.
Product data sheet
Rev. 3 — 6 March 2014
13 of 14
PMBFJ620
NXP Semiconductors
Dual N-channel field-effect transistor
13. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 3
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 4
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 11
3
4
5
6
7
8
9
10
11
Legal information. . . . . . . . . . . . . . . . . . . . . . . 12
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 12
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
11.1
11.2
11.3
11.4
12
13
Contact information. . . . . . . . . . . . . . . . . . . . . 13
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP Semiconductors N.V. 2014.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 6 March 2014
Document identifier: PMBFJ620
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