PMBTA45 [NXP]
500 V, 150 mA NPN high-voltage low VCEsat transistor; 500 V ， 150毫安NPN高电压低VCEsat晶体管晶体管
| 型号： | PMBTA45 |
| 厂家： | 
NXP |
| 描述： | 500 V, 150 mA NPN high-voltage low VCEsat transistor |
| 文件： | 总13页 (文件大小：152K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PMBTA45
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
Rev. 02 — 10 March 2010
Product data sheet
1. Product profile
1.1 General description
NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a
SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9050T.
1.2 Features and benefits
High voltage
Low collector-emitter saturation voltage VCEsat
High collector current capability IC and ICM
High collector current gain (hFE) at high IC
AEC-Q101 qualified
1.3 Applications
Electronic ballasts
LED driver for LED chain module
LCD backlighting
Automotive motor management
Flyback converters
Hook switch for wired telecom
Switch Mode Power Supply (SMPS)
1.4 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
Min
Typ
Max Unit
VCESM
collector-emitter peak
VBE = 0 V
-
-
500
V
voltage
VCEO
IC
collector-emitter voltage
collector current
DC current gain
open base
-
-
500
0.15
-
V
A
-
-
hFE
VCE = 10 V; IC = 30 mA
50
100
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pinning
Pin
1
Description
base
Simplified outline
Graphic symbol
3
3
2
emitter
3
collector
1
1
2
2
sym021
3. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMBTA45
-
plastic surface-mounted package; 3 leads
SOT23
4. Marking
Table 4.
Marking codes
Type number
Marking code[1]
PMBTA45
LK*
[1] * = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
2 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
VCBO
VCEO
VCESM
VEBO
IC
Parameter
Conditions
open emitter
open base
Min
Max
500
500
500
6
Unit
V
collector-base voltage
collector-emitter voltage
-
-
-
-
-
-
V
collector-emitter peak voltage VBE = 0 V
V
emitter-base voltage
collector current
open collector
V
0.15
0.5
A
ICM
peak collector current
single pulse;
A
tp ≤ 1 ms
IBM
peak base current
single pulse;
-
200
mA
tp ≤ 1 ms
[1]
Ptot
Tj
total power dissipation
junction temperature
ambient temperature
storage temperature
Tamb ≤ 25 °C
-
300
mW
°C
-
150
Tamb
Tstg
−55
−65
+150
+150
°C
°C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
006aab150
400
P
tot
(mW)
300
200
100
0
−75
−25
25
75
125
175
(°C)
T
amb
FR4 PCB, standard footprint
Fig 1. Power derating curve
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
3 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
Min
Typ
Max Unit
[1]
thermal resistance from in free air
junction to ambient
-
-
417
K/W
Rth(j-sp)
thermal resistance from
junction to solder point
-
-
70
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
006aab691
3
10
duty cycle = 1
Z
th(j-a)
(K/W)
0.75
0.5
2
0.33
10
0.2
0.1
0.05
10
0.02
0.01
1
0
−1
10
10
−5
−4
−3
−2
−1
2
3
10
10
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
4 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
7. Characteristics
Table 7.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter Conditions
Min
Typ
Max
100
10
Unit
nA
ICBO
collector-base cut-off VCB = 360 V; IE = 0 A
-
-
-
-
current
VCB = 360 V; IE = 0 A;
μA
Tj = 150 °C
ICES
IEBO
hFE
collector-emitter
cut-off current
VCE = 360 V; VBE = 0 V
-
-
-
-
100
100
nA
nA
emitter-base cut-off VEB = 5 V; IC = 0 A
current
DC current gain
VCE = 10 V
IC = 30 mA
50
50
-
100
100
60
-
[1]
IC = 50 mA
-
VCEsat
collector-emitter
saturation voltage
IC = 20 mA; IB = 2 mA
IC = 50 mA; IB = 6 mA
IC = 50 mA; IB = 5 mA
75
90
0.9
mV
mV
V
[1]
[1]
-
65
VBEsat
fT
base-emitter
saturation voltage
-
0.75
transition frequency VCE = 10 V; IE = 10 mA;
f = 100 MHz
-
-
-
35
4
-
-
-
MHz
pF
Cc
collector capacitance VCB = 20 V; IE = ie = 0 A;
f = 1 MHz
Ce
emitter capacitance VEB = 0.5 V;
IC = ic = 0 A; f = 1 MHz
200
pF
td
tr
delay time
rise time
VCC = 20 V; IC = 0.05 A;
IBon = 5 mA;
IBoff = −10 mA
-
-
-
-
-
-
80
-
-
-
-
-
-
ns
ns
ns
ns
ns
ns
2700
2780
3400
800
ton
ts
turn-on time
storage time
fall time
tf
toff
turn-off time
4200
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
5 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
006aab720
006aab721
200
0.5
I
B
(mA) = 70
I
C
h
(A)
FE
63
49
56
42
0.4
150
35
(1)
28
0.3
0.2
0.1
0.0
21
14
100
50
0
(2)
(3)
7
−1
2
3
10
1
10
10
10
0
1
2
3
4
5
I
C
(mA)
V
CE
(V)
VCE = 10 V
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
Fig 4. Collector current as a function of
collector-emitter voltage; typical values
006aab722
006aab723
1.00
1.2
V
(V)
V
BE
BEsat
(V)
(1)
(2)
(3)
0.75
0.9
0.6
0.3
0.0
(1)
(2)
(3)
0.50
0.25
0.0
−1
2
3
−1
2
3
10
1
10
10
10
10
1
10
10
10
I
C
(mA)
I (mA)
C
VCE = 10 V
IC/IB = 5
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 5. Base-emitter voltage as a function of collector
current; typical values
Fig 6. Base-emitter saturation voltage as a function
of collector current; typical values
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
6 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
006aab724
006aab725
1
1
V
V
CEsat
(V)
CEsat
(V)
(1)
(2)
−1
−1
10
10
(1)
(3)
(2)
(3)
−2
10
−2
10
10
10
−1
2
3
−1
2
3
1
10
10
10
1
10
10
10
I
C
(mA)
I (mA)
C
IC/IB = 5
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 7. Collector-emitter saturation voltage as a
function of collector current; typical values
Fig 8. Collector-emitter saturation voltage as a
function of collector current; typical values
006aab726
006aab727
4
4
10
10
R
CEsat
R
CEsat
(Ω)
(Ω)
3
3
10
10
2
2
10
10
(1)
(2)
(3)
10
10
(1)
(3)
(2)
1
1
−1
10
−1
10
10
10
−1
2
3
−1
2
3
1
10
10
10
1
10
10
10
I
C
(mA)
I (mA)
C
IC/IB = 5
Tamb = 25 °C
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
(1) IC/IB = 20
(2) IC/IB = 10
(3) IC/IB = 5
Fig 9. Collector-emitter saturation resistance as a
function of collector current; typical values
Fig 10. Collector-emitter saturation resistance as a
function of collector current; typical values
PMBTA45_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
7 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
8. Test information
V
V
CC
BB
R
R
C
B
V
o
(probe)
(probe)
oscilloscope
oscilloscope
450 Ω
450 Ω
R2
V
I
DUT
R1
mlb826
Fig 11. Test circuit for switching times
8.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
9. Package outline
3.0
2.8
1.1
0.9
3
0.45
0.15
2.5 1.4
2.1 1.2
1
2
0.48
0.38
0.15
0.09
1.9
Dimensions in mm
04-11-04
Fig 12. Package outline SOT23 (TO-236AB)
10. Packing information
Table 8.
Packing methods
The indicated -xxx are the last three digits of the 12NC ordering code.[1]
Type number Package Description
Packing quantity
3000
-215
10000
PMBTA45
SOT23
4 mm pitch, 8 mm tape and reel
-235
[1] For further information and the availability of packing methods, see Section 14.
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
8 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
11. Soldering
3.3
2.9
1.9
solder lands
solder resist
2
3
1.7
solder paste
occupied area
0.6
0.7
(3×)
(3×)
Dimensions in mm
0.5
(3×)
0.6
(3×)
1
sot023_fr
Fig 13. Reflow soldering footprint SOT23 (TO-236AB)
2.2
1.2
(2×)
1.4
(2×)
solder lands
solder resist
occupied area
2.6
4.6
Dimensions in mm
1.4
preferred transport direction during soldering
2.8
4.5
sot023_fw
Fig 14. Wave soldering footprint SOT23 (TO-236AB)
PMBTA45_2
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
9 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
12. Revision history
Table 9.
Revision history
Document ID
PMBTA45_2
Modifications:
PMBTA45_1
Release date
Data sheet status
Change notice
Supersedes
20100310
Product data sheet
-
PMBTA45_1
• Figure 7: updated
20090916 Product data sheet
-
-
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
10 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
13. Legal information
13.1 Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
Suitability for use in automotive applications — This NXP
13.2 Definitions
Semiconductors product has been qualified for use in automotive
applications. The product is not designed, authorized or warranted to be
suitable for use in medical, military, aircraft, space or life support equipment,
nor in applications where failure or malfunction of an NXP Semiconductors
product can reasonably be expected to result in personal injury, death or
severe property or environmental damage. NXP Semiconductors accepts no
liability for inclusion and/or use of NXP Semiconductors products in such
equipment or applications and therefore such inclusion and/or use is at the
customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on a weakness or default in the
customer application/use or the application/use of customer’s third party
customer(s) (hereinafter both referred to as “Application”). It is customer’s
sole responsibility to check whether the NXP Semiconductors product is
suitable and fit for the Application planned. Customer has to do all necessary
testing for the Application in order to avoid a default of the Application and the
product. NXP Semiconductors does not accept any liability in this respect.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
13.3 Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted or
construed as an offer to sell products that is open for acceptance or the grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from national authorities.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
11 of 13
PMBTA45
NXP Semiconductors
13.4 Trademarks
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
PMBTA45_2
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© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 10 March 2010
12 of 13
PMBTA45
NXP Semiconductors
500 V, 150 mA NPN high-voltage low VCEsat (BISS) transistor
15. Contents
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description . . . . . . . . . . . . . . . . . . . . . 1
Features and benefits. . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data . . . . . . . . . . . . . . . . . . . . 1
1.1
1.2
1.3
1.4
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Test information. . . . . . . . . . . . . . . . . . . . . . . . . 8
Quality information . . . . . . . . . . . . . . . . . . . . . . 8
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 8
Packing information . . . . . . . . . . . . . . . . . . . . . 8
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
3
4
5
6
7
8
8.1
9
10
11
12
13
Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13.1
13.2
13.3
13.4
14
15
Contact information. . . . . . . . . . . . . . . . . . . . . 12
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2010.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 10 March 2010
Document identifier: PMBTA45_2
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