PMBTH81 [NXP]
PNP 1 GHz switching transistor; PNP 1 GHz的开关晶体管
| 型号： | PMBTH81 |
| 厂家： | 
NXP |
| 描述： | PNP 1 GHz switching transistor |
| 文件： | 总7页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMBTH81
PNP 1 GHz switching transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
FEATURES
PINNING
PIN
• Low cost
DESCRIPTION
Code: V31
base
fpage
3
• High transition frequency.
1
2
3
DESCRIPTION
emitter
collector
The PMBTH81 is a general purpose
silicon pnp transistor, encapsulated in
a SOT23 plastic envelope. Its
1
2
Top view
MSB003
complement is the PMBTH10.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
20
UNIT
VCBO
VCEO
Ptot
Cce
Ccb
fT
collector-base voltage
collector-emitter voltage
total power dissipation
open emitter
−
V
V
open base
−
20
Ts = 45 °C (note 1)
VCB = 10 V; IB = 0; f = 1 MHz
VCB = 10 V; IE = 0; f = 1 MHz
−
400
0.65
0.85
−
mW
pF
collector-emitter capacitance
collector-base capacitance
transition frequency
−
−
pF
VCE = 10 V; IC = 5 mA;
600
MHz
f = 100 MHz; Tamb = 25 °C
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
2
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
collector-base voltage
CONDITIONS
MIN. MAX. UNIT
VCBO
VCEO
VEBO
IC
open emitter
open base
−
−
−
−
−
20
20
3
V
collector-emitter voltage
emitter-base voltage
collector current
V
open collector
V
40
400
mA
mW
°C
°C
Ptot
Tstg
Tj
total power dissipation
storage temperature
junction temperature
Ts = 45 °C (note 1)
−65 150
150
−
THERMAL RESISTANCE
SYMBOL
PARAMETER
THERMAL RESISTANCE
Rth j-s
from junction to soldering point (note 1)
260 K/W
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj = 25 °C
SYMBOL
V(BR)CBO
PARAMETER
CONDITIONS
open emitter; IC = 10 µA; IE = 0
open base; IC = 1 mA; IB = 0
MIN. MAX. UNIT
collector-base breakdown voltage
20
20
−
−
V
V
V(BR)CEO
collector-emitter breakdown
voltage
V(BR)EBO
VCE sat
VBE on
ICBO
IEBO
emitter-base breakdown voltage
collector-emitter saturation voltage
base-emitter ON voltage
collector-base cut-off current
emitter-base cut-off current
DC current gain
open collector; IE = 10 µA; IC = 0
IC = 5 mA; IB = 0.5 mA
VCE = 10 V; IC = 5 mA
VCB = 10 V; IE = 0
3
−
V
−
0.5
0.9
100
100
−
V
−
V
−
nA
nA
VEB = 2 V; IC = 0
−
hFE
VCE = 10 V; IC = 5 mA
VCB = 10 V; IB = 0; f = 1 MHz
VCB = 10 V; IE = 0; f = 1 MHz
60
−
Cce
collector-emitter capacitance
collector-base capacitance
transition frequency
0.65 pF
0.85 pF
Ccb
−
fT
VCE = 10 V; IC = 5 mA;
600
−
MHz
f = 100 MHz; Tamb = 25 °C
September 1995
3
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
MRA566
MRA568
120
−30
handbook, halfpage
handbook, halfpage
930 MHz
450 MHz
250 MHz
I
C =
100 MHz
b
12 mA
11
b
21
(mS)
(mS)
250 MHz
−50
100 MHz
I
C = 4 mA
8 mA
8 mA
4 mA
80
450 MHz
−70
−90
930
MHz
40
12 mA
60
0
−120
−110
−20
−80
−40
0
40
20
100
g
140
(mS)
g
(mS)
21
11
VCB = 10 V; Tamb = 25 °C.
VCB = 10 V; Tamb = 25 °C.
Fig.2 Common base input admittance (Y11).
Fig.3 Forward transfer admittance (Y21).
MRA570
MRA569
0
12
handbook, halfpage
handbook, halfpage
100 MHz
250 MHz
b
12
(mS)
b
22
(mS)
930 MHz
I
C = 4 mA
−2
450 MHz
8
I
C = 12 mA
8 mA
12 mA
−4
−6
−8
8 mA
4 mA
4
450 MHz
930 MHz
250 MHz
100 MHz
0
−2.5
−2
−1.5
−1
−0.5
0
0
1
2
3
4
g
(mS)
g
(mS)
12
22
VCB = 10 V; Tamb = 25 °C.
VCB = 10 V; Tamb = 25 °C.
Fig.4 Reverse transfer admittance (Y12).
Fig.5 Common base output admittance (Y22).
September 1995
4
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
MRA567
1000
gain
handbook, halfpage
bandwidth
product
(MHz)
800
600
400
200
0
0
4
8
12
16
I
20
(mA)
C
VCE =10 V; f = 100 MHz.
Fig.6 Current gain-bandwidth product as a
function of collector current.
September 1995
5
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
c
D
E
e
e
H
L
Q
v
w
A
p
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
September 1995
6
Philips Semiconductors
Product specification
PNP 1 GHz switching transistor
PMBTH81
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
7
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