PMBZ5229BTRL [NXP]
DIODE 4.3 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, Voltage Regulator Diode;
| 型号： | PMBZ5229BTRL |
| 厂家： | 
NXP |
| 描述： | DIODE 4.3 V, 0.25 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, TO-236AB, Voltage Regulator Diode 稳压二极管 齐纳二极管 测试 |
| 文件： | 总12页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
PMBZ5226B to PMBZ5257B
Voltage regulator diodes
1999 May 17
Product specification
Supersedes data of 1996 Apr 26
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
FEATURES
PINNING
• Total power dissipation:
max. 250 mW
PIN
DESCRIPTION
1
2
3
anode
• Tolerance series: ±5%
not connected
cathode
• Working voltage range:
nom. 3.3 to 75 V
• Non-repetitive peak reverse power
dissipation: max. 40 W.
handbook, age
2
1
APPLICATIONS
• General regulation functions.
2
1
n.c.
DESCRIPTION
3
Low-power voltage regulator diodes
in small SOT23 plastic SMD
packages.
3
Top view
MAM243
The series consists of 32 types with
nominal working voltages from
3.3 to 75 V.
Fig.1 Simplified outline (SOT23) and symbol.
MARKING
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE(1)
TYPE
NUMBER
MARKING
CODE
PMBZ5226B
PMBZ5227B
PMBZ5228B
PMBZ5229B
PMBZ5230B
PMBZ5231B
PMBZ5232B
PMBZ5233B
8A
8B
8C
8D
8E
8F
8G
8H
PMBZ5234B
PMBZ5235B
PMBZ5236B
PMBZ5237B
PMBZ5238B
PMBZ5239B
PMBZ5240B
PMBZ5241B
8J
8K
8L
PMBZ5242B
PMBZ5243B
PMBZ5244B
PMBZ5245B
PMBZ5246B
PMBZ5247B
PMBZ5248B
PMBZ5249B
8S
8T
8U
8V
8W
8X
8Y
8Z
PMBZ5250B
PMBZ5251B
PMBZ5252B
PMBZ5253B
PMBZ5254B
PMBZ5255B
PMBZ5256B
PMBZ5257B
81A
81B
81C
81D
81E
81F
81G
81H
8M
8N
8P
8Q
8R
Note
1.
= p : Made in Hong Kong.
= t : Made in Malaysia.
1999 May 17
2
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
IF
IZSM
PARAMETER
CONDITIONS
MIN.
MAX.
200
UNIT
mA
continuous forward current
−
non-repetitive peak reverse current tp = 100 µs; square wave;
Tj = 25 °C prior to surge
see Table
“Per type”
Ptot
total power dissipation
Tamb = 25 °C; note 1
amb = 25 °C; note 2
non-repetitive peak reverse power tp = 100 µs; square wave;
−
−
−
300
250
40
mW
mW
W
T
PZSM
dissipation
Tj = 25 °C prior to surge; see Fig.2
Tstg
Tj
storage temperature
junction temperature
−65
+150
150
°C
°C
−
Notes
1. Device mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
2. Device mounted on an FR4 printed circuit-board.
ELECTRICAL CHARACTERISTICS
Total series
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
forward voltage
CONDITIONS
MAX.
UNIT
VF
IF = 200 mA; see Fig.3
1.1
V
1999 May 17
3
Per type
Tj = 25 °C unless otherwise specified.
WORKING DIFFERENTIAL TEMP. COEFF.
TEST
DIODE CAP. REVERSE CURRENT at NON-REPETITIVE PEAK
VOLTAGE RESISTANCE
SZ (%/K)
at IZ
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
Cd (pF)
REVERSE VOLTAGE
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
Tamb = 25 °C
(2)
VZ (V)(1)
at IZtest
rdif (Ω)
at IZ = 0.25 mA
TYPE No.
IR (µA)
VR
(V)
NOM.
MAX.
TYP.
MAX.
MAX.
MAX.
PMBZ5226B
PMBZ5227B
PMBZ5228B
PMBZ5229B
PMBZ5230B
PMBZ5231B
PMBZ5232B
PMBZ5233B
PMBZ5234B
PMBZ5235B
PMBZ5236B
PMBZ5237B
PMBZ5238B
PMBZ5239B
PMBZ5240B
PMBZ5241B
PMBZ5242B
PMBZ5243B
PMBZ5244B
PMBZ5245B
PMBZ5246B
PMBZ5247B
PMBZ5248B
PMBZ5249B
PMBZ5250B
PMBZ5251B
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.0
6.2
6.8
7.5
8.2
8.7
9.1
10
1600
1700
1900
2000
2000
2000
1600
1600
1000
750
−0.064
−0.065
−0.063
−0.058
−0.047
−0.013
+0.023
+0.023
+0.039
+0.040
+0.047
+0.052
+0.053
+0.055
+0.055
+0.058
+0.062
+0.065
+0.067
+0.073
+0.073
+0.073
+0.078
+0.078
+0.080
+0.080
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
20
450
450
450
450
450
300
300
300
200
200
150
150
150
150
90
25
15
10
5
1.0
1.0
1.0
1.0
1.0
2.0
3.0
3.5
4.0
5.0
6.0
6.5
6.5
7.0
8.0
8.4
9.1
9.9
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.5
3.0
3.0
2.5
2.5
2.5
2.0
2.0
1.5
1.5
1.5
1.5
1.5
1.25
5
5
5
5
5
3
500
3
500
3
600
3
600
3
600
3
11
600
85
2
12
600
85
1
13
600
9.5
80
0.5
14
600
9.0
8.5
7.8
7.4
7.0
6.6
6.2
5.6
80
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
10
15
600
75
11
12
13
14
14
15
17
16
600
75
17
600
75
18
600
70
19
600
70
20
600
60
22
600
60
WORKING DIFFERENTIAL TEMP. COEFF.
TEST
DIODE CAP. REVERSE CURRENT at NON-REPETITIVE PEAK
VOLTAGE RESISTANCE
SZ (%/K)
at IZ
CURRENT
IZtest (mA) at f = 1 MHz;
at VR = 0 V
Cd (pF)
REVERSE VOLTAGE
REVERSE CURRENT
IZSM (A) at tp = 100 µs;
(2)
VZ (V)(1)
at IZtest
rdif (Ω)
at IZ = 0.25 mA
TYPE No.
IR (µA)
Tamb = 25 °C
VR
(V)
NOM.
24
MAX.
600
TYP.
MAX.
MAX.
MAX.
PMBZ5252B
PMBZ5253B
PMBZ5254B
PMBZ5255B
PMBZ5256B
PMBZ5257B
+0.081
+0.082
+0.085
+0.085
+0.085
+0.085
5.2
5.0
4.6
4.5
4.2
3.8
55
55
50
50
50
45
0.1
0.1
0.1
0.1
0.1
0.1
18
19
21
21
23
25
1.25
1.25
1.0
25
600
27
600
28
600
1.0
30
600
1.0
33
700
0.9
Notes
1. VZ is measured with device at thermal equilibrium while mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
2. For types PMBZ5226B to PMBZ5242B the IZ current is 7.5 mA; for PMBZ5243B and higher IZ = IZtest. SZ values valid between 25 °C and 125 °C.
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
330
UNIT
K/W
K/W
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point
thermal resistance from junction to ambient note 1
500
Note
1. Device mounted on a printed-circuit board.
GRAPHICAL DATA
MBG801
MBG781
3
10
300
handbook, halfpage
handbook, halfpage
I
P
F
ZSM
(mA)
(W)
2
10
200
(1)
(2)
10
100
1
10
0
0.6
−1
0.8
1.0
1
duration (ms)
10
V
(V)
F
(1) Tj = 25 °C (prior to surge).
(2) Tj = 150 °C (prior to surge).
Fig.2 Maximum permissible non-repetitive peak
reverse power dissipation versus duration.
Fig.3 Forward current as a function of forward
voltage; typical values.
1999 May 17
6
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
B
E
A
X
H
v
M
A
E
3
Q
A
A
1
c
1
2
e
1
b
p
w M
B
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
b
p
c
D
E
e
e
H
L
Q
v
w
A
p
1
E
max.
1.1
0.9
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
mm
0.1
1.9
0.95
0.2
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT23
1999 May 17
7
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
DEFINITIONS
Data sheet status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1999 May 17
8
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
1999 May 17
9
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
1999 May 17
10
Philips Semiconductors
Product specification
Voltage regulator diodes
PMBZ5226B to PMBZ5257B
NOTES
1999 May 17
11
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© Philips Electronics N.V. 1999
SCA64
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
115002/00/02/pp12
Date of release: 1999 May 17
Document order number: 9397 750 05922
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