PMC85XP,115 [NXP]
PMC85XP - 30 V P-channel MOSFET with pre-biased NPN transistor DFN 6-Pin;
| 型号： | PMC85XP,115 |
| 厂家： | 
NXP |
| 描述： | PMC85XP - 30 V P-channel MOSFET with pre-biased NPN transistor DFN 6-Pin |
| 文件： | 总15页 (文件大小：229K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6
-
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
0
2
0
2
N
F
D
15 May 2013
Product data sheet
1. General description
P-channel enhancement mode Field-Effect Transistor (FET) in Trench MOSFET
technology and NPN Resistor-Equipped Transistor (RET) together in a leadless medium
power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package.
2. Features and benefits
Trench MOSFET technology
NPN transistor built-in bias resistors
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
•
•
•
•
3. Applications
Charging switch for portable devices
High-side load switch
USB port overvoltage protection
Power management in battery-driven portables
Hard disk and computing power management
•
•
•
•
•
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
P-channel Trench MOSFET
VDS
VGS
ID
drain-source voltage
Tj = 25 °C
-
-
-
-
-30
12
V
V
A
gate-source voltage
drain current
-12
-
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
[1]
-3.4
P-channel Trench MOSFET; static characteristics
RDSon
drain-source on-state
resistance
VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C
-
85
110
mΩ
NPN RET
VCEO
collector-emitter
voltage
Tamb = 25 °C; open base
-
-
-
-
50
V
IO
output current
100
mA
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NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
Symbol
NPN RET
R1
Parameter
Conditions
Min
Typ
Max
Unit
bias resistor 1
bias resistor 2
3.3
-
4.7
47
6.1
-
kΩ
kΩ
R2
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm2
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
C
G
S
1
2
3
4
5
6
7
8
E
B
D
S
G
C
C
D
emitter
base
6
5
4
7
8
drain
source
gate
R2
R1
1
2
3
Transparent top view
E
B
D
collector
collector
drain
DFN2020-6 (SOT1118)
017aaa396
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMC85XP
DFN2020-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals; body 2 x 2 x 0.65 mm
SOT1118
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMC85XP
1K
PMC85XP
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Product data sheet
15 May 2013
2 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
P-channel Trench MOSFET
VDS
VGS
ID
drain-source voltage
Tj = 25 °C
-
-30
12
V
gate-source voltage
drain current
-12
V
VGS = -4.5 V; Tamb = 25 °C; t ≤ 5 s
VGS = -4.5 V; Tamb = 25 °C
VGS = -4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
[1]
-
-
-
-
-
-
-
-3.4
-2.6
-1.6
-8
A
A
A
IDM
Ptot
peak drain current
A
total power dissipation
[2]
[1]
[2]
485
1170
mW
mW
Tsp = 25 °C
8300 mW
P-channel Trench MOSFET; source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
-1.2
A
NPN RET
VCBO
VCEO
VEBO
VI
collector-base voltage
collector-emitter voltage
emitter-base voltage
input voltage
Tamb = 25 °C; open emitter
Tamb = 25 °C; open base
Tamb = 25 °C; open collector
positive
-
-
-
-
-
-
-
-
-
-
50
V
50
V
10
V
30
V
negative
-5
V
IO
output current
100
100
465
985
mA
mA
mW
mW
ICM
Ptot
peak collector current
total power dissipation
Tamb = 25 °C
Tsp = 25 °C
[2]
[1]
[2]
4160 mW
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm2
[2] Device mounted on an FR4 PCB, single-sided copper; tin-plated and standard footprint.
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
3 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
017aaa123
017aaa124
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
- 25
25
75
125
175
T (°C)
j
T (°C)
j
Fig. 1. Normalized total power dissipation as a
function of junction temperature
Fig. 2. Normalized continuous drain current as a
function of junction temperature
aaa-003661
-10
Limit R
= V /I
DS
DSon
D
t
= 100 µs
= 1 ms
I
p
D
(A)
-1
-1
t
p
t
t
= 10 ms
p
p
DC; T = 25 °C
sp
= 100 ms
-10
DC; T
amb
= 25 °C;
2
drain mounting pad 6 cm
-2
-10
-10
-1
2
-1
-10
-10
V
(V)
DS
IDM = single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
P-channel Trench MOSFET
Rth(j-a)
thermal resistance
in free air
[1]
[2]
[2]
-
-
-
223
93
256
107
63
K/W
K/W
K/W
from junction to
ambient
t ≤ 5 s; in free air
55
PMC85XP
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Product data sheet
15 May 2013
4 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance
from junction to solder
point
-
10
15
K/W
NPN RET
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
233
110
270
127
K/W
K/W
Rth(j-sp)
thermal resistance
from junction to solder
point
-
25
30
K/W
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper; tin-plated and standard
footprint.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad
for drain 6 cm2
017aaa398
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
2
10
0.33
0.25
0.2
0.1
0.05
0.02
0.01
10
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, standard footprint
Fig. 4. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
PMC85XP
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Product data sheet
15 May 2013
5 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
017aaa399
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
2
10
0.75
0.5
0.33
0.25
0.2
10
0.1
0.05
0.02
0.01
1
0
-1
10
-5
-4
-3
-2
10
-1
2
3
10
10
10
10
1
10
10
10
t
(s)
p
FR4 PCB, mounting pad for drain 6 cm2
Fig. 5. P-channel Trench MOSFET: Transient thermal impedance from junction to ambient as a function of pulse
duration; typical values
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
P-channel Trench MOSFET; static characteristics
V(BR)DSS
drain-source
ID = -250 µA; VGS = 0 V; Tj = 25 °C
-30
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = -250 mA; VDS = VGS; Tj = 25 °C
voltage
-0.45 -0.78 -1
IDSS
drain leakage current
VDS = -30 V; VGS = 0 V; Tamb = 25 °C
VDS = -30 V; VGS = 0 V; Tamb = 150 °C
VGS = 12 V; VDS = 0 V; Tj = 25 °C
VGS = -12 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; ID = -2.6 A; Tj = 25 °C
VGS = -4.5 V; ID = -2.6 A; Tj = 150 °C
VGS = -2.5 V; ID = -1.5 A; Tj = 25 °C
VDS = -10 V; ID = -2.6 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-1
µA
µA
nA
nA
mΩ
mΩ
mΩ
S
-
-11
100
100
110
173
140
-
IGSS
gate leakage current
-
-
RDSon
drain-source on-state
resistance
85
133
105
10
gfs
transfer conductance
P-channel Trench MOSFET; dynamic characteristics
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = -15 V; ID = -2.6 A; VGS = -4.5 V;
Tj = 25 °C
-
-
-
-
-
5.2
1.1
0.95
680
54
7.8
nC
nC
nC
pF
pF
-
-
-
-
VDS = -15 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
PMC85XP
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Product data sheet
15 May 2013
6 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Crss
reverse transfer
capacitance
-
40
-
pF
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = -15 V; ID = -2.6 A; RG(ext) = 6 Ω;
VGS = -4.5 V; Tj = 25 °C
-
-
-
-
3
-
-
-
-
ns
ns
ns
ns
15
112
48
turn-off delay time
fall time
P-channel Trench MOSFET; source-drain diode
VSD
source-drain voltage
IS = -1.2 A; VGS = 0 V; Tj = 25 °C
-
-
-0.8
-
-1.2
100
V
NPN RET
ICBO
collector-base cut-off
current
VCB = 50 V; IE = 0 A; Tj = 25 °C
nA
ICEO
collector-emitter cut-off VCE = 30 V; IB = 0 A; Tj = 25 °C
-
-
-
-
-
-
1
µA
µA
µA
current
VCE = 30 V; IB = 0 A; Tj = 150 °C
50
170
IEBO
emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tj = 25 °C
hFE
DC current gain
VCE = 5 V; IC = 10 mA; Tj = 25 °C
IC = 5 mA; IB = 0.25 mA; Tj = 25 °C
100
-
-
-
-
VCEsat
collector-emitter
100
mV
saturation voltage
VI(off)
VI(on)
R1
off-state input voltage IC = 100 µA; VCE = 5 V; Tj = 25 °C
-
0.6
0.9
4.7
47
10
-
0.5
-
V
on-state input voltage IC = 5 mA; VCE = 0.3 V; Tj = 25 °C
1.3
3.3
-
V
bias resistor 1
bias resistor 2
bias resistor ratio
6.1
-
kΩ
kΩ
R2
R2/R1
CC
8
12
2.5
collector capacitance
IE = 0 A; ie = 0 A; f = 1 MHz; Tj = 25 °C;
VCB = 10 V
-
pF
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
7 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
aaa-003662
017aaa401
-3
-5
-10
-4.5 V -2.5 V
I
D
(A)
-1.8 V
V
= -1.7 V
GS
-4
-3
-2
-1
0
I
D
(A)
-4
-10
(1)
(2)
(3)
-1.5 V
-1.2 V
-5
-10
0
-0,5
-1.0
-1.5
-2.0
0
-0.25
-0.50
-0.75
-0.10
V
-0.25
(V)
GS
V
(V)
DS
Tj = 25 °C
Tj = 25 °C; VDS = −5 V
(1) minimum values
(2) typical values
Fig. 6. Output characteristics: drain current as a
function of drain-source voltage; typical values
(3) maximum values
Fig. 7. Subthreshold drain current as a function of
gate-source voltage
aaa-003663
aaa-003664
300
400
V
= -1.6 V
-1.8 V
GS
R
DSon
(mΩ)
R
DSon
(mΩ)
300
200
-2.0 V
-2.5 V
200
100
0
T = 150 °C
j
100
-4.5 V
T = 25 °C
j
0
0
-1
-2
-3
-4
-5
0
-2
-4
-6
I
(A)
V
(V)
GS
D
Tj = 25 °C
Fig. 8. Drain-source on-state resistance as a function Fig. 9. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = -1 A
PMC85XP
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Product data sheet
15 May 2013
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NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
017aaa404
017aaa405
-3
2.0
a
I
D
(A)
1.5
-2
-1
0
1.0
0.5
0
(2)
(1)
0
-0.5
-1.0
-1.5
-2.0
V
-2.5
(V)
-60
0
60
120
180
T (°C)
j
GS
VDS > ID × RDSon
(1) Tj = 25 °C
Fig. 11. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
(2) Tj = 150 °C
Fig. 10. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
017aaa406
017aaa407
3
-1.5
10
(1)
V
GS(th)
(V)
C
(pF)
(1)
(2)
-1.0
-0.5
0
2
10
(3)
(2)
(3)
10
2
-10
-60
0
60
120
180
0
-1
-10
T (°C)
j
V
(V)
DS
ID = -0.25 mA; VDS = VGS
(1) maximum values
(2) typical values
f = 1 MHz; VGS = 0 V
(1) Ciss
(2) Coss
(3) minimum values
(3) Crss
Fig. 12. Gate-source threshold voltage as a function of
junction temperature
Fig. 13. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
9 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
017aaa408
-6
V
DS
V
GS
(V)
I
D
-4
-2
0
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS1
GS2
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 15. Gate charge waveform definitions
0
2
4
6
Q
G
(nC)
ID = −3.3 A; VDS = −10 V; Tamb = 25 °C
Fig. 14. Gate-source voltage as a function of gate
charge; typical values
017aaa409
-3.2
I
S
(A)
-2.4
-1.6
-0.8
0
(1)
(2)
0
-0.4
-0.8
-1.2
V
(V)
SD
VGS = 0 V
(1) Tamb = 150 °C
(2) Tamb = 25 °C
Fig. 16. Source current as a function of source-drain voltage; typical values
PMC85XP
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Product data sheet
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10 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 17. Duty cycle definition
12. Package outline
2.1
1.9
0.65
max
1.1
0.9
0.04
max
0.77
0.57
(2×)
3
4
6
0.65
(4×)
2.1
1.9
0.54
0.44
(2×)
0.35
0.25
(6×)
1
0.3
0.2
Dimensions in mm
10-05-31
Fig. 18. Package outline DFN2020-6 (SOT1118)
PMC85XP
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Product data sheet
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NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
13. Soldering
2.1
0.65
0.49
0.65
0.49
0.3 0.4
(6×) (6×)
solder lands
0.875
solder paste
1.05 1.15
(2×) (2×)
2.25
solder resist
0.875
occupied area
Dimensions in mm
0.35
(6×)
0.72
(2×)
0.45
(6×)
0.82
(2×)
sot1118_fr
Fig. 19. Reflow soldering footprint for DFN2020-6 (SOT1118)
14. Revision history
Table 8.
Revision history
Data sheet ID
PMC85XP v.2
Modifications:
PMC85XP v.1
Release date
Data sheet status
Change notice
Supersedes
20130515
Product data sheet
-
PMC85XP v.1
Pinning information: graphic symbol corrected
•
20120524
Product data sheet
-
-
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
12 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
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punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
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15.1 Data sheet status
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
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inclusion and/or use of NXP Semiconductors products in such equipment or
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risk.
Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nxp.com.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
NXP Semiconductors does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
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provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local NXP
Semiconductors sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, NXP Semiconductors does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
PMC85XP
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
13 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
14 / 15
NXP Semiconductors
PMC85XP
30 V P-channel MOSFET with pre-biased NPN transistor
16. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information ...................................................11
Package outline ................................................... 11
Soldering .............................................................. 12
Revision history ...................................................12
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© NXP B.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 15 May 2013
PMC85XP
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© NXP B.V. 2013. All rights reserved
Product data sheet
15 May 2013
15 / 15
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