PMDXB600UNE [NXP]
20 V, dual N-channel Trench MOSFET; 20 V ，双N沟道沟槽MOSFET
| 型号： | PMDXB600UNE |
| 厂家： | 
NXP |
| 描述： | 20 V, dual N-channel Trench MOSFET |
| 文件： | 总15页 (文件大小：258K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
6
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
-
B
0
1
0
1
N
F
D
16 September 2013
Product data sheet
1. General description
Dual N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small
DFN1010B-6 (SOT1216) Surface-Mounted Device (SMD) plastic package using Trench
MOSFET technology.
2. Features and benefits
Trench MOSFET technology
•
•
•
•
•
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection > 1 kV HBM
Drain-source on-state resistance RDSon = 470 mΩ
3. Applications
Relay driver
•
•
•
•
High-speed line driver
Low-side load switch
Switching circuits
4. Quick reference data
Table 1.
Symbol
Quick reference data
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
-
-
-
20
8
V
-8
-
V
VGS = 4.5 V; Tamb = 25 °C
[1]
600
mA
Static characteristics (per transistor)
RDSon
drain-source on-state
resistance
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
-
470
620
mΩ
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
5. Pinning information
Table 2.
Pin
Pinning information
Symbol Description
Simplified outline
Graphic symbol
D2
D1
1
2
3
4
5
6
7
8
S1
G1
D2
S2
G2
D1
D1
D2
source TR1
gate TR1
drain TR2
source TR2
gate TR2
drain TR1
drain TR1
drain TR2
1
6
5
4
7
G1
G2
2
8
3
S1
S2
017aaa256
Transparent top view
DFN1010B-6 (SOT1216)
6. Ordering information
Table 3.
Ordering information
Type number
Package
Name
Description
Version
PMDXB600UNE
DFN1010B-6
plastic thermal enhanced ultra thin small outline package; no
leads; 6 terminals
SOT1216
7. Marking
Table 4.
Marking codes
Type number
Marking code
PMDXB600UNE
00 10 00
READING
DIRECTION
MARKING CODE
MARK-FREE AREA
(EXAMPLE)
PIN 1
INDICATION MARK
VENDOR CODE
READING EXAMPLE:
11
01
10
YEAR DATE
CODE
aaa-007665
Fig. 1. DFN1010B-6 (SOT1216) binary marking code description
PMDXB600UNE
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Product data sheet
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20 V, dual N-channel Trench MOSFET
8. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
Max
Unit
Per transistor
VDS
VGS
ID
drain-source voltage
gate-source voltage
drain current
Tj = 25 °C
-
20
V
-8
-
8
V
VGS = 4.5 V; Tamb = 25 °C
VGS = 4.5 V; Tamb = 100 °C
Tamb = 25 °C; single pulse; tp ≤ 10 µs
Tamb = 25 °C
[1]
[1]
600
400
2.5
265
380
mA
mA
A
-
IDM
Ptot
peak drain current
-
total power dissipation
[2]
[1]
-
mW
mW
-
Tsp = 25 °C
-
4025 mW
Source-drain diode
IS
source current
Tamb = 25 °C
[1]
-
0.4
A
Per device
Tj
junction temperature
ambient temperature
storage temperature
-55
-55
-65
150
150
150
°C
°C
°C
Tamb
Tstg
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
drain 1 cm2.
[2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
PMDXB600UNE
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Product data sheet
16 September 2013
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
017aaa001
017aaa002
120
120
P
der
(%)
I
der
(%)
80
80
40
40
0
- 75
0
- 75
- 25
25
75
125
175
(°C)
- 25
25
75
125
175
(°C)
T
T
amb
amb
Fig. 2. Normalized total power dissipation as a
function of ambient temperature
Fig. 3. Normalized continuous drain current as a
function of ambient temperature
aaa-008997
10
Limit R
= V /I
DS
I
DSon
D
D
(A)
t
t
t
= 10 µs
= 100 µs
= 1 ms
p
1
p
p
-1
10
10
DC; T = 25 °C
sp
t
t
= 10 ms
p
p
DC; T
= 25 °C;
amb
drain mounting pad 1 cm
2
= 100 ms
-2
-1
2
10
1
10
10
V
(V)
DS
IDM = single pulse
Fig. 4. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6.
Symbol
Thermal characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Per transistor
Rth(j-a)
thermal resistance
from junction to
ambient
in free air
[1]
[2]
-
-
410
285
475
330
K/W
K/W
PMDXB600UNE
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Product data sheet
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
Rth(j-sp)
thermal resistance
from junction to solder
point
-
27
31
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
aaa-006902
3
10
duty cycle = 1
0.75
Z
th(j-a)
(K/W)
0.5
0.33
0.25
0.2
2
10
0.1
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
aaa-006903
3
10
Z
th(j-a)
(K/W)
duty cycle = 1
0.75
0.5
0.33
2
10
0.25
0.2
0.1
0.05
0.02
0.01
0
10
-3
10
-2
-1
2
3
10
10
1
10
10
10
t
p
(s)
FR4 PCB, mounting pad for drain 1 cm2
Fig. 6. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
PMDXB600UNE
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Product data sheet
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
10. Characteristics
Table 7.
Symbol
Characteristics
Parameter
Conditions
Min
Typ
Max
Unit
Static characteristics (per transistor)
V(BR)DSS
drain-source
ID = 250 µA; VGS = 0 V; Tj = 25 °C
20
-
-
V
V
breakdown voltage
VGSth
gate-source threshold ID = 250 µA; VDS = VGS; Tj = 25 °C
voltage
0.45
0.7
0.95
IDSS
IGSS
drain leakage current
gate leakage current
VDS = 20 V; VGS = 0 V; Tj = 25 °C
VGS = 8 V; VDS = 0 V; Tj = 25 °C
VGS = -8 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; VDS = 0 V; Tj = 25 °C
VGS = -4.5 V; VDS = 0 V; Tj = 25 °C
VGS = 4.5 V; ID = 600 mA; Tj = 25 °C
VGS = 4.5 V; ID = 600 mA; Tj = 150 °C
VGS = 2.5 V; ID = 500 mA; Tj = 25 °C
VGS = 1.8 V; ID = 100 mA; Tj = 25 °C
VGS = 1.5 V; ID = 10 mA; Tj = 25 °C
VGS = 1.2 V; ID = 1 mA; Tj = 25 °C
VDS = 5 V; ID = 0.6 A; Tj = 25 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
1
µA
µA
µA
µA
µA
mΩ
-
10
-10
1
-
-
-
-1
RDSon
drain-source on-state
resistance
470
760
620
845
1125
2210
1
620
1000 mΩ
850 mΩ
1300 mΩ
3000 mΩ
-
-
mΩ
S
gfs
forward
transconductance
Dynamic characteristics (per transistor)
QG(tot)
QGS
QGD
Ciss
total gate charge
gate-source charge
gate-drain charge
input capacitance
output capacitance
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
Tj = 25 °C
-
-
-
-
-
-
0.4
0.1
0.1
21.3
5.4
4.2
0.7
nC
nC
nC
pF
pF
pF
-
-
-
-
-
VDS = 10 V; f = 1 MHz; VGS = 0 V;
Tj = 25 °C
Coss
Crss
reverse transfer
capacitance
td(on)
tr
td(off)
tf
turn-on delay time
rise time
VDS = 10 V; ID = 600 mA; VGS = 4.5 V;
RG(ext) = 6 Ω; Tj = 25 °C
-
-
-
-
5.6
9.2
19
-
-
-
-
ns
ns
ns
ns
turn-off delay time
fall time
51
Source-drain diode (per transistor)
VSD
source-drain voltage
IS = 0.36 A; VGS = 0 V; Tj = 25 °C
-
0.8
1.2
V
PMDXB600UNE
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Product data sheet
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
aaa-008998
aaa-008999
-3
-4
-5
-6
2.5
10
D
4.5 V
I
D
(A)
I
(A)
2.0
2.5 V
10
1.5
1.0
0.5
0
min
typ
max
1.8 V
1.5 V
10
10
V
= 1.2 V
GS
0
1
2
3
4
0
0.5
1.0
1.5
V
(V)
V
(V)
GS
DS
Tj = 25 °C
Tj = 25 °C; VDS = 5 V
Fig. 7. Output characteristics: drain current as a
function of drain-source voltage; typical values
Fig. 8. Sub-threshold drain current as a function of
gate-source voltage
aaa-009000
aaa-009001
3
3
1.5 V
2 V
R
DSon
(Ω)
R
DSon
(Ω)
1.2 V
1.8 V
2.5 V
2
2
3 V
1
1
T = 150 °C
j
V
= 4.5 V
GS
T = 25 °C
j
0
0
0
0.5
1.0
1.5
2.0
2.5
0
1
2
3
4
5
I
(A)
V
(V)
GS
D
Tj = 25 °C
Fig. 9. Drain-source on-state resistance as a function Fig. 10. Drain-source on-state resistance as a function
of drain current; typical values of gate-source voltage; typical values
ID = 0.6 A
PMDXB600UNE
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Product data sheet
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
aaa-009002
aaa-009003
2.5
2.0
1.5
1.0
0.5
0
I
D
(A)
a
2.0
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
1
2
3
4
5
-60
0
60
120
180
V
(V)
T (°C)
j
GS
VDS > ID × RDSon
Fig. 12. Normalized drain-source on-state resistance
as a function of junction temperature; typical
values
Fig. 11. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
aaa-009004
aaa-009005
2
1.5
10
V
GS(th)
(V)
C
(pF)
1.0
0.5
0
C
iss
10
max
C
C
oss
typ
rss
min
1
-1
10
2
-60
0
60
120
180
1
10
10
T (°C)
j
V
(V)
DS
ID = 0.25 mA; VDS = VGS
f = 1 MHz; VGS = 0 V
Fig. 13. Gate-source threshold voltage as a function of Fig. 14. Input, output and reverse transfer capacitances
junction temperature
as a function of drain-source voltage; typical
values
PMDXB600UNE
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Product data sheet
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
aaa-009006
5
V
DS
V
GS
(V)
I
4
3
2
1
0
D
V
GS(pl)
V
GS(th)
GS
V
Q
Q
GS2
GS1
Q
Q
GD
GS
Q
G(tot)
017aaa137
Fig. 16. MOSFET transistor: Gate charge waveform
definitions
0
0.1
0.2
0.3
0.4
Q
0.5
(nC)
G
ID = 0.6 A; VDS = 10 V; Tamb = 25 °C
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
aaa-009007
2.5
I
S
(A)
2.0
1.5
1.0
0.5
0
T = 150 °C
j
T = 25 °C
j
0
0.4
0.8
1.2
1.6
V
2.0
(V)
SD
VGS = 0 V
Fig. 17. Source current as a function of source-drain voltage; typical values
11. Test information
t
t
1
2
P
duty cycle δ =
t
2
t
1
t
006aaa812
Fig. 18. Duty cycle definition
PMDXB600UNE
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Product data sheet
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
12. Package outline
0.35
0.35
0.15
0.23
1
6
2
5
3
4
0.125
0.205
0.22
0.30
0.95
1.05
0.32
0.40
0.04
max
0.34
0.40
0.275 0.275
1.05
1.15
Dimensions in mm
13-03-05
Fig. 19. Package outline DFN1010B-6 (SOT1216)
PMDXB600UNE
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Product data sheet
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
13. Soldering
Footprint information for reflow soldering of DFN1010B-6 package
SOT1216
0.9
0.35
0.35
0.15 0.2 (6x) 0.15
0.25
0.35
1.3 1.2 0.5
0.35
0.6 1.1
0.25
0.3 (6x)
1
1.35
solder land
solder land plus solder paste
occupied area
solder resist
Dimensions in mm
12-11-23
Issue date
sot1216_fr
13-03-06
Fig. 20. Reflow soldering footprint for DFN1010B-6 (SOT1216)
PMDXB600UNE
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Product data sheet
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PMDXB600UNE
20 V, dual N-channel Trench MOSFET
14. Revision history
Table 8.
Revision history
Data sheet ID
Release date
Data sheet status
Change notice
Supersedes
PMDXB600UNE v.1
20130916
Product data sheet
-
-
PMDXB600UNE
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Product data sheet
16 September 2013
12 / 15
NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
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customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Document
Product
Definition
status [1][2] status [3]
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Right to make changes — NXP Semiconductors reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
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Product
[short] data
sheet
Production
This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
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Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
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the accuracy or completeness of information included herein and shall have
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is deemed to offer functions and qualities beyond those described in the
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Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
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PMDXB600UNE
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Product data sheet
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NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
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the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
NXP Semiconductors accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without NXP Semiconductors’ warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,
FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,
ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,
QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,
TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.
HD Radio and HD Radio logo — are trademarks of iBiquity Digital
Corporation.
PMDXB600UNE
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
14 / 15
NXP Semiconductors
PMDXB600UNE
20 V, dual N-channel Trench MOSFET
16. Contents
1
General description ............................................... 1
Features and benefits ............................................1
Applications ........................................................... 1
Quick reference data ............................................. 1
Pinning information ...............................................2
Ordering information .............................................2
Marking ...................................................................2
Limiting values .......................................................3
Thermal characteristics .........................................4
Characteristics .......................................................6
Test information .....................................................9
Package outline ................................................... 10
Soldering .............................................................. 11
Revision history ...................................................12
2
3
4
5
6
7
8
9
10
11
12
13
14
15
Legal information .................................................13
Data sheet status ............................................... 13
Definitions ...........................................................13
Disclaimers .........................................................13
Trademarks ........................................................ 14
15.1
15.2
15.3
15.4
© NXP N.V. 2013. All rights reserved
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 16 September 2013
PMDXB600UNE
All information provided in this document is subject to legal disclaimers.
© NXP N.V. 2013. All rights reserved
Product data sheet
16 September 2013
15 / 15
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