PMEG1030EJ,115 [NXP]

PMEG1030EH; PMEG1030EJ - 10 V, 3 A ultra low V_F MEGA Schottky barrier rectifiers SOD 2-Pin;
PMEG1030EJ,115
型号: PMEG1030EJ,115
厂家: NXP    NXP
描述:

PMEG1030EH; PMEG1030EJ - 10 V, 3 A ultra low V_F MEGA Schottky barrier rectifiers SOD 2-Pin

功效 光电二极管
文件: 总9页 (文件大小:93K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
PMEG1030EH; PMEG1030EJ  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
Rev. 04 — 15 January 2010  
Product data sheet  
1. Product profile  
1.1 General description  
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifiers with an  
integrated guard ring for stress protection encapsulated in small SMD plastic packages.  
Table 1.  
Product overview  
Type number  
Package  
NXP  
Configuration  
JEITA  
-
PMEG1030EH  
PMEG1030EJ  
SOD123F  
SOD323F  
single isolated diodes  
single isolated diodes  
SC-90  
1.2 Features  
„ Forward current: 3 A  
„ Reverse voltage: 10 V  
„ Ultra low forward voltage  
„ Small and flat lead SMD package  
1.3 Applications  
„ Low voltage rectification  
„ High efficiency DC-to-DC conversion  
„ Switched-mode power supply  
„ Inverse polarity protection  
„ Low power consumption applications  
1.4 Quick reference data  
Table 2.  
Symbol  
IF  
Quick reference data  
Parameter  
Conditions  
Min  
Typ  
Max  
3
Unit  
A
forward current  
reverse voltage  
forward voltage  
Tsp 55 °C  
-
-
-
-
VR  
-
10  
V
[1]  
VF  
IF = 3 A  
390  
530  
mV  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
 
 
 
 
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
2. Pinning information  
Table 3.  
Pinning  
Pin  
1
Description  
cathode  
Simplified outline  
Symbol  
[1]  
1
2
2
anode  
1
2
sym001  
001aab540  
[1] The marking bar indicates the cathode.  
3. Ordering information  
Table 4.  
Ordering information  
Type number  
Package  
Name  
-
Description  
Version  
PMEG1030EH  
PMEG1030EJ  
plastic surface mounted package; 2 leads  
plastic surface mounted package; 2 leads  
SOD123F  
SOD323F  
SC-90  
4. Marking  
Table 5.  
Marking codes  
Type number  
PMEG1030EH  
PMEG1030EJ  
Marking code  
AC  
E7  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
2 of 9  
 
 
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
5. Limiting values  
Table 6.  
Limiting values  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
Symbol Parameter  
Conditions  
Min  
Max  
10  
Unit  
V
VR  
IF  
reverse voltage  
-
-
-
forward current  
Tsp 55 °C  
3
A
IFRM  
repetitive peak forward  
current  
tp 1 ms; δ ≤ 0.25  
5.5  
A
[1]  
IFSM  
Ptot  
non-repetitive peak forward t = 8 ms; square  
-
9
A
current  
wave  
total power dissipation  
PMEG1030EH  
Tamb 25 °C  
[1]  
[2]  
[1]  
[2]  
-
375  
830  
mW  
mW  
mW  
mW  
°C  
-
PMEG1030EJ  
-
360  
-
830  
Tj  
junction temperature  
ambient temperature  
storage temperature  
-
150  
Tamb  
Tstg  
65  
65  
+150  
+150  
°C  
°C  
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard  
footprint.  
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
6. Thermal characteristics  
Table 7.  
Thermal characteristics  
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
Rth(j-a)  
thermal resistance from  
junction to ambient  
in free air  
[1][2]  
[2][3]  
[1][2]  
[2][3]  
PMEG1030EH  
-
-
-
-
-
-
-
-
330  
150  
350  
150  
K/W  
K/W  
K/W  
K/W  
PMEG1030EJ  
Rth(j-sp)  
thermal resistance from  
junction to solder point  
PMEG1030EH  
PMEG1030EJ  
-
-
-
-
60  
55  
K/W  
K/W  
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.  
[2] For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse  
power losses PR are a significant part of the total power losses. Nomograms for determining the reverse  
power losses PR and IF(AV) rating will be available on request.  
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2.  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
3 of 9  
 
 
 
 
 
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
7. Characteristics  
Table 8.  
Characteristics  
T
amb = 25 °C unless otherwise specified.  
Symbol Parameter  
Conditions  
Min  
Typ  
Max  
Unit  
[1]  
VF  
forward voltage  
IF = 0.01 A  
IF = 0.1 A  
IF = 1 A  
-
-
-
-
-
-
-
-
100  
170  
280  
390  
0.55  
0.8  
1
130  
200  
350  
530  
2
mV  
mV  
mV  
mV  
mA  
mA  
mA  
pF  
IF = 3 A  
IR  
reverse current  
VR = 5 V  
VR = 8 V  
VR = 10 V  
2.5  
3
Cd  
diode capacitance VR = 1 V; f = 1 MHz  
70  
85  
[1] Pulse test: tp 300 μs; δ ≤ 0.02.  
006aaa290  
006aaa291  
4
3
2
6
5
4
3
2
10  
10  
R
(μA)  
10  
I
I
F
)
(mA  
(1)  
10  
(2)  
10  
10  
10  
(1)  
(2)  
(3)  
(4)  
10  
(3)  
10  
1
10  
1
(4)  
1  
10  
0
0.1  
0.2  
0.3  
0.4  
V
0.5  
0
2
4
6
8
10  
(V)  
V (V)  
R
F
(1) Tamb = 125 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = 40 °C  
(1) Tamb = 125 °C  
(2) Tamb = 85 °C  
(3) Tamb = 25 °C  
(4) Tamb = 40 °C  
Fig 1. Forward current as a function of forward  
voltage; typical values  
Fig 2. Reverse current as a function of reverse  
voltage; typical values  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
4 of 9  
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
006aaa292  
130  
C
d
(pF)  
110  
90  
70  
50  
30  
0
2
4
6
8
10  
V
R
(V)  
T
amb = 25 °C; f = 1 MHz  
Fig 3. Diode capacitance as a function of reverse voltage; typical values  
8. Package outline  
1.7  
1.5  
1.2  
1.0  
1.35  
1.15  
0.80  
0.65  
0.5  
0.3  
1
1
0.55  
0.35  
2.7 1.8  
2.3 1.6  
3.6 2.7  
3.4 2.5  
2
2
0.40  
0.25  
0.25  
0.10  
0.70  
0.55  
0.25  
0.10  
Dimensions in mm  
04-11-29  
Dimensions in mm  
04-09-13  
Fig 4. Package outline SOD123F  
Fig 5. Package outline SOD323F (SC-90)  
9. Packing information  
Table 9.  
Packing methods  
The -xxx numbers are the last three digits of the 12NC ordering code.[1]  
Type number  
Package  
Description  
Packing quantity  
3000  
-115  
-115  
10000  
-135  
PMEG1030EH  
PMEG1030EJ  
SOD123F  
SOD323F  
4 mm pitch, 8 mm tape and reel  
4 mm pitch, 8 mm tape and reel  
-135  
[1] For further information and the availability of packing methods, see Section 13.  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
5 of 9  
 
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
10. Soldering  
4.4  
4
2.9  
1.6  
solder lands  
solder resist  
2.1 1.6  
1.1 1.2  
solder paste  
occupied area  
1.1  
(2×)  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm  
Fig 6. Reflow soldering footprint SOD123F  
3.05  
2.80  
2.10  
1.60  
solder lands  
solder resist  
occupied area  
solder paste  
1.65 0.95  
0.50 0.60  
0.50  
(2×)  
msa433  
Reflow soldering is the only recommended soldering method.  
Dimensions in mm  
Fig 7. Reflow soldering footprint SOD323F (SC-90)  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
6 of 9  
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
11. Revision history  
Table 10. Revision history  
Document ID  
Release date  
20100115  
Data sheet status  
Change notice  
Supersedes  
PMEG1030EH_EJ_4  
Modifications:  
Product data sheet  
-
PMEG1030EH_EJ_3  
This data sheet was changed to reflect the new company name NXP Semiconductors,  
including new legal definitions and disclaimers. No changes were made to the technical  
content.  
PMEG1030EH_EJ_3  
PMEG1030EH_EJ_2  
PMEG1030EJ_1  
20050602  
20050405  
20050124  
Product data sheet  
Product data sheet  
Product data sheet  
-
-
-
PMEG1030EH_EJ_2  
PMEG1030EJ_1  
-
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
7 of 9  
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
12. Legal information  
12.1 Data sheet status  
Document status[1][2]  
Product status[3]  
Development  
Definition  
Objective [short] data sheet  
This document contains data from the objective specification for product development.  
This document contains data from the preliminary specification.  
This document contains the product specification.  
Preliminary [short] data sheet Qualification  
Product [short] data sheet Production  
[1]  
[2]  
[3]  
Please consult the most recently issued document before initiating or completing a design.  
The term ‘short data sheet’ is explained in section “Definitions”.  
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status  
information is available on the Internet at URL http://www.nxp.com.  
damage. NXP Semiconductors accepts no liability for inclusion and/or use of  
NXP Semiconductors products in such equipment or applications and  
therefore such inclusion and/or use is at the customer’s own risk.  
12.2 Definitions  
Draft — The document is a draft version only. The content is still under  
internal review and subject to formal approval, which may result in  
modifications or additions. NXP Semiconductors does not give any  
representations or warranties as to the accuracy or completeness of  
information included herein and shall have no liability for the consequences of  
use of such information.  
Applications — Applications that are described herein for any of these  
products are for illustrative purposes only. NXP Semiconductors makes no  
representation or warranty that such applications will be suitable for the  
specified use without further testing or modification.  
Limiting values — Stress above one or more limiting values (as defined in  
the Absolute Maximum Ratings System of IEC 60134) may cause permanent  
damage to the device. Limiting values are stress ratings only and operation of  
the device at these or any other conditions above those given in the  
Characteristics sections of this document is not implied. Exposure to limiting  
values for extended periods may affect device reliability.  
Short data sheet — A short data sheet is an extract from a full data sheet  
with the same product type number(s) and title. A short data sheet is intended  
for quick reference only and should not be relied upon to contain detailed and  
full information. For detailed and full information see the relevant full data  
sheet, which is available on request via the local NXP Semiconductors sales  
office. In case of any inconsistency or conflict with the short data sheet, the  
full data sheet shall prevail.  
Terms and conditions of sale — NXP Semiconductors products are sold  
subject to the general terms and conditions of commercial sale, as published  
at http://www.nxp.com/profile/terms, including those pertaining to warranty,  
intellectual property rights infringement and limitation of liability, unless  
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of  
any inconsistency or conflict between information in this document and such  
terms and conditions, the latter will prevail.  
12.3 Disclaimers  
General — Information in this document is believed to be accurate and  
reliable. However, NXP Semiconductors does not give any representations or  
warranties, expressed or implied, as to the accuracy or completeness of such  
information and shall have no liability for the consequences of use of such  
information.  
No offer to sell or license — Nothing in this document may be interpreted or  
construed as an offer to sell products that is open for acceptance or the grant,  
conveyance or implication of any license under any copyrights, patents or  
other industrial or intellectual property rights.  
Right to make changes — NXP Semiconductors reserves the right to make  
changes to information published in this document, including without  
limitation specifications and product descriptions, at any time and without  
notice. This document supersedes and replaces all information supplied prior  
to the publication hereof.  
Export control — This document as well as the item(s) described herein  
may be subject to export control regulations. Export might require a prior  
authorization from national authorities.  
Quick reference data — The Quick reference data is an extract of the  
product data given in the Limiting values and Characteristics sections of this  
document, and as such is not complete, exhaustive or legally binding.  
Suitability for use — NXP Semiconductors products are not designed,  
authorized or warranted to be suitable for use in medical, military, aircraft,  
space or life support equipment, nor in applications where failure or  
malfunction of an NXP Semiconductors product can reasonably be expected  
to result in personal injury, death or severe property or environmental  
12.4 Trademarks  
Notice: All referenced brands, product names, service names and trademarks  
are the property of their respective owners.  
13. Contact information  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
PMEG1030EH_EJ_4  
© NXP B.V. 2010. All rights reserved.  
Product data sheet  
Rev. 04 — 15 January 2010  
8 of 9  
 
 
 
 
 
 
PMEG1030EH; PMEG1030EJ  
NXP Semiconductors  
10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers  
14. Contents  
1
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
General description . . . . . . . . . . . . . . . . . . . . . 1  
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Quick reference data . . . . . . . . . . . . . . . . . . . . 1  
1.1  
1.2  
1.3  
1.4  
2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2  
Ordering information. . . . . . . . . . . . . . . . . . . . . 2  
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2  
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3  
Thermal characteristics . . . . . . . . . . . . . . . . . . 3  
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 4  
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 5  
Packing information . . . . . . . . . . . . . . . . . . . . . 5  
Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6  
Revision history. . . . . . . . . . . . . . . . . . . . . . . . . 7  
3
4
5
6
7
8
9
10  
11  
12  
Legal information. . . . . . . . . . . . . . . . . . . . . . . . 8  
Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 8  
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 8  
12.1  
12.2  
12.3  
12.4  
13  
14  
Contact information. . . . . . . . . . . . . . . . . . . . . . 8  
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9  
Please be aware that important notices concerning this document and the product(s)  
described herein, have been included in section ‘Legal information’.  
© NXP B.V. 2010.  
All rights reserved.  
For more information, please visit: http://www.nxp.com  
For sales office addresses, please send an email to: salesaddresses@nxp.com  
Date of release: 15 January 2010  
Document identifier: PMEG1030EH_EJ_4  
 

相关型号:

PMEG1030EJ,135

DIODE 3 A, 10 V, SILICON, RECTIFIER DIODE, PLASTIC, SC-90, 2 PIN, Rectifier Diode
NXP

PMEG1030EJ115

10 V, 3 A ultra low VF MEGA Schottky barrier rectifiers
NXP

PMEG1201AESF,315

Rectifier Diode
NXP

PMEG120G10ELR

120 V, 1 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G10ELR-Q

120 V, 1 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G20ELP

120 V, 2 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G20ELP-Q

120 V, 2 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G20ELR

120 V, 2 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G20ELR-Q

120 V, 2 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G30ELP

120 V, 3 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA

PMEG120G30ELP-Q

PMEG120G30ELP-QProduction
NEXPERIA

PMEG150G10ELR

150 V, 1 A Silicon Germanium (SiGe) rectifierProduction
NEXPERIA