PMEG2005EB [NXP]
Low VF MEGA Schottky barrier diode; 低VF MEGA肖特基势垒二极管
| 型号： | PMEG2005EB |
| 厂家： | 
NXP |
| 描述： | Low VF MEGA Schottky barrier diode |
| 文件： | 总8页 (文件大小：56K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEG2005EB
Low VF MEGA Schottky barrier
diode
Product specification
2003 Apr 04
Supersedes data of 2003 Feb 20
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
FEATURES
PINNING
• Forward current: 0.5 A
• Reverse voltage: 20 V
• Very low forward voltage
• Guard ring protected
PIN
DESCRIPTION
1
2
cathode
anode
• Ultra small SMD package.
APPLICATIONS
• Ultra high-speed switching
• Voltage clamping
handbook, halfpage
k
a
• Protection circuits
Top view
MAM403
• Low current rectification
• Low power consumption applications (e.g. handheld
devices).
Marking code: L5.
The marking bar indicates the cathode.
DESCRIPTION
Fig.1 Simplified outline (SOD523; SC-79) and
symbol.
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier diode, encapsulated in a SOD523
(SC-79) ultra small SMD plastic package.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
CONDITIONS
MIN.
MAX.
20
UNIT
VR
−
−
−
−
V
IF
500
3.5
mA
A
IFRM
IFSM
Tstg
Tj
tp = 1 ms; δ ≤ 0.25
t = 8 ms square wave
6
A
−65
−
+150
125
+125
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
2003 Apr 04
2
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
ELECTRICAL CHARACTERISTICS
Tamb = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
see Fig.2
TYP.
MAX.
UNIT
VF
continuous forward voltage
IF = 0.1 mA
IF = 1 mA
120
180
mV
180
245
320
430
7
240
290
380
480
30
mV
mV
mV
mV
µA
IF = 10 mA
IF = 100 mA
IF = 500 mA
IR
continuous reverse current
diode capacitance
VR = 10 V; see Fig.3; note 1
Cd
VR = 1 V; f = 1 MHz; see Fig.4 24
30
pF
Note
1. Pulsed test: tp = 300 µs; δ = 0.02.
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
Rth j-a
thermal resistance from junction to
ambient
note 1
400
Note
1. Refer to SOD523 (SC-79) standard mounting conditions.
2003 Apr 04
3
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
GRAPHICAL DATA
MHC456
MHC457
3
4
10
10
handbook, halfpage
handbook, halfpage
I
F
I
R
(1)
(2)
(mA)
(µA)
2
10
3
10
(1)
(2)
(3)
10
1
2
10
10
(3)
−1
10
−2
10
1
0
0
0.1
0.2
0.3
0.4
0.5
(V)
10
20
30
V
V
(V)
F
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
Fig.2 Forward current as a function of forward
voltage; typical values.
Fig.3 Reverse current as a function of reverse
voltage; typical values.
MHC458
50
handbook, halfpage
C
d
(pF)
40
30
20
10
0
0
5
10
15
20
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2003 Apr 04
4
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
PACKAGE OUTLINE
Plastic surface mounted package; 2 leads
SOD523
A
c
v
M
A
H
E
A
D
0
0.5
1 mm
scale
1
2
DIMENSIONS (mm are the original dimensions)
b
E
p
UNIT
A
b
c
D
E
H
v
p
E
0.34
0.26
0.17
0.11
0.65
0.58
1.25
1.15
0.85
0.75
1.65
1.55
mm
0.1
(1)
Note
1. The marking bar indicates the cathode.
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
JEITA
98-11-25
02-12-13
SOD523
SC-79
2003 Apr 04
5
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
DATA SHEET STATUS
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
LEVEL
DEFINITION
I
Objective data
Development This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
Production
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification
The data in a short-form
Life support applications
These products are not
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes
Philips Semiconductors
reserves the right to make changes in the products -
including circuits, standard cells, and/or software -
described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
Application information
Applications that are
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2003 Apr 04
6
Philips Semiconductors
Product specification
Low VF MEGA Schottky barrier diode
PMEG2005EB
NOTES
2003 Apr 04
7
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2003
SCA75
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
613514/02/pp8
Date of release: 2003 Apr 04
Document order number: 9397 750 11354
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