PMEG2010BEV,115 [NXP]
PMEGXX10BEA; PMEGXX10BEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin;
| 型号： | PMEG2010BEV,115 |
| 厂家： | 
NXP |
| 描述： | PMEGXX10BEA; PMEGXX10BEV - Very low VF MEGA Schottky barrier rectifiers SOT 6-Pin 光电二极管 |
| 文件： | 总11页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
PMEGXX10BEA;
PMEGXX10BEV
1 A very low VF MEGA Schottky
barrier rectifier
Product data sheet
2004 Jun 14
Supersedes data of 2004 Apr 02
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
FEATURES
QUICK REFERENCE DATA
• Forward current: 1 A
SYMBOL
IF
PARAMETER
forward current
reverse voltage
MAX.
UNIT
• Reverse voltages: 20 V, 30 V, 40 V
• Very low forward voltage
1
A
VR
20; 30; 40
V
• Ultra small and very small plastic SMD package
• Power dissipation comparable to SOT23.
PINNING
PIN
DESCRIPTION
APPLICATIONS
PMEGXX10BEA (see Fig.1)
• High efficiency DC-to-DC conversion
• Voltage clamping
1
2
cathode
anode
• Protection circuits
PMEGXX10BEV (see Fig.2)
• Low voltage rectification
• Blocking diodes
1, 2, 5, 6
3, 4
cathode
anode
• Low power consumption applications.
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a very small SOD323
(SC-76) and ultra small SOT666 SMD plastic package.
1
2
1
2
sym001
MARKING
The marking bar indicates the cathode.
TYPE NUMBER
PMEG2010BEA
MARKING CODE
V1
V2
V3
G6
G5
G4
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
PMEG3010BEA
PMEG4010BEA
PMEG2010BEV
PMEG3010BEV
PMEG4010BEV
6
5
4
1, 2
5, 6
3, 4
sym038
1
2
3
Fig.2 Simplified outline (SOT666) and symbol.
2004 Jun 14
2
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
ORDERING INFORMATION
PACKAGE
TYPE NUMBER
NAME
DESCRIPTION
VERSION
SOD323
SOT666
PMEGXX10BEA
PMEGXX10BEV
−
plastic surface mounted package; 2 leads
plastic surface mounted package; 6 leads
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VR
continuous reverse voltage
PMEG2010BEA/PMEG2010BEV
PMEG3010BEA/PMEG3010BEV
PMEG4010BEA/PMEG4010BEV
continuous forward current
−
−
−
−
−
−
20
V
V
V
A
A
A
30
40
1
IF
Ts ≤ 55 °C; note 1
IFRM
IFSM
repetitive peak forward current
non-repetitive peak forward current
tp ≤ 1 ms; δ ≤ 0.5; note 2
3.5
10
tp = 8 ms; square wave;
note 2
Tj
junction temperature
note 3
note 3
−
150
°C
°C
°C
Tamb
Tstg
operating ambient temperature
storage temperature
−65
−65
+150
+150
Notes
1. Refer to SOD323 (SC-76) and SOT666 standard mounting conditions.
2. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
3. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
2004 Jun 14
3
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
PMEGXX10BEA (SOD323)
Rth(j-a)
thermal resistance from junction to
ambient
in free air; notes 1 and 2
in free air; notes 2 and 3
note 4
450
210
90
K/W
K/W
K/W
Rth(j-s)
thermal resistance from junction to
soldering point
PMEGXX10BEV (SOT666)
Rth(j-a)
Rth(j-s)
Notes
thermal resistance from junction to
ambient
in free air; notes 2 and 5
in free air; notes 2 and 6
note 4
405
215
80
K/W
K/W
K/W
thermal resistance from junction to
soldering point
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses
PR are a significant part of the total power losses. Nomograms for determining the reverse power losses PR and IF(AV)
rating will be available on request.
3. Device mounted on an FR4 printed-circuit board with copper clad 10 × 10 mm.
4. Solder point of cathode tab.
5. Refer to SOT666 standard mounting conditions.
6. Only valid if pins 3 and 4 are connected in parallel (SOT666 package).
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
PMEG2010BEA/ PMEG3010BEA/ PMEG4010BEA/
PMEG2010BEV PMEG3010BEV PMEG4010BEV
SYMBOL
PARAMETER
CONDITIONS
UNIT
TYP.
90
MAX.
130
TYP.
90
MAX.
130
TYP.
95
MAX.
130
VF
forward voltage
IF = 0.1 mA
mV
mV
mV
mV
mV
mV
μA
IF = 1 mA
150
210
280
355
420
15
190
240
330
390
500
40
150
215
285
380
450
12
200
250
340
430
560
30
155
220
295
420
540
7
210
270
350
470
640
20
IF = 10 mA
IF = 100 mA
IF = 500 mA
IF = 1000 mA
VR = 10 V; note 1
VR = 20 V; note 1
VR = 30 V; note 1
VR = 40 V; note 1
IR
continuous
reverse current
40
200
−
−
−
−
−
μA
−
40
150
−
−
−
μA
−
−
−
30
43
100
50
μA
Cd
diode capacitance VR = 1 V; f = 1 MHz 66
80
55
70
pF
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Jun 14
4
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
GRAPHICAL DATA
MHC673
MHC674
4
5
10
10
handbook, halfpage
handbook, halfpage
I
I
F
R
(1)
(2)
(mA)
(μA)
3
4
10
10
(1)
(2)
(3)
2
3
10
10
2
10
10
(3)
1
10
−1
10
1
0
0
0.2
0.4
0.6
5
10
15
20
V
(V)
V
R (V)
F
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
PMEG2010BEA/PMEG2010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3)
T
amb = 25 °C.
(3) Tamb = 25 °C.
Fig.3 Forward current as a function of forward
voltage; typical values.
Fig.4 Reverse current as a function of reverse
voltage; typical values.
MHC676
MHC675
4
10
140
handbook, halfpage
C
handbook, halfpage
d
(pF)
120
I
F
(mA)
3
10
100
80
(1)
(2)
(3)
2
10
60
40
20
10
1
−1
10
0
0
0
0.2
0.4
0.6
5
10
15
20
V
(V)
F
V
(V)
R
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG2010BEA/PMEG2010BEV
(3)
Tamb = 25 °C.
Tamb = 25 °C; f = 1 MHz.
Fig.5 Diode capacitance as a function of reverse
voltage; typical values.
Fig.6 Forward current as a function of forward
voltage; typical values.
2004 Jun 14
5
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC678
MHC677
5
10
120
d
(pF)
100
handbook, halfpage
C
I
R
(μA)
(1)
4
10
80
60
40
20
3
10
(2)
(3)
2
10
10
1
0
0
0
5
10
15
20
25
V
30
R (V)
5
10
15
20
V
(V)
R
PMEG3010BEA/PMEG3010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
PMEG3010BEA/PMEG3010BEV
(3) Tamb = 25 °C.
Tamb = 25 °C; f = 1 MHz.
Fig.7 Reverse current as a function of reverse
voltage; typical values.
Fig.8 Diode capacitance as a function of reverse
voltage; typical values.
MHC679
MHC680
5
4
10
10
handbook, halfpage
handbook, halfpage
I
I
R
(μA)
F
(mA)
(1)
3
4
10
10
(1)
(2)
(3)
3
10
2
10
(2)
2
10
10
(3)
10
1
−1
1
10
0
0.2
0.4
0.6
0
10
20
30
40
V
V
(V)
R (V)
F
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
PMEG4010BEA/PMEG4010BEV
(1) Tamb = 150 °C.
(2) Tamb = 85 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(3) Tamb = 25 °C.
Fig.9 Forward current as a function of forward
voltage; typical values.
Fig.10 Reverse current as a function of reverse
voltage; typical values.
2004 Jun 14
6
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
MHC681
100
handbook, halfpage
C
d
(pF)
80
60
40
20
0
0
5
10
15
20
V
(V)
R
PMEG4010BEA/PMEG4010BEV
amb = 25 °C; f = 1 MHz.
T
Fig.11 Diode capacitance as a function of reverse
voltage; typical values.
2004 Jun 14
7
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
PACKAGE OUTLINES
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Jun 14
8
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
Plastic surface-mounted package; 6 leads
SOT666
D
A
E
X
Y
S
S
H
E
6
5
4
pin 1 index
A
c
1
2
3
e
1
b
w
M
A
p
L
p
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
b
c
D
E
e
e
H
L
w
y
A
p
p
1
E
0.6
0.5
0.27
0.17
0.18
0.08
1.7
1.5
1.3
1.1
1.7
1.5
0.3
0.1
mm
1.0
0.5
0.1
0.1
REFERENCES
JEDEC JEITA
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
04-11-08
06-03-16
SOT666
2004 Jun 14
9
NXP Semiconductors
Product data sheet
1 A very low VF MEGA Schottky
barrier rectifier
PMEGXX10BEA;
PMEGXX10BEV
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
2004 Jun 14
10
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/04/pp11
Date of release: 2004 Jun 14
Document order number: 9397 750 13234
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