PMEG2020AEA,115 [NXP]
PMEG2020AEA - 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package SOD 2-Pin;
| 型号： | PMEG2020AEA,115 |
| 厂家： | 
NXP |
| 描述： | PMEG2020AEA - 20 V, 2 A very low VF MEGA Schottky barrier rectifier in SOD323 (SC-76) package SOD 2-Pin 功效 光电二极管 |
| 文件： | 总7页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
handbook, halfpage
PMEG2020AEA
20 V, 2 A very low VF MEGA
Schottky barrier rectifier in SOD323
(SC-76) package
Product data sheet
2004 Feb 26
NXP Semiconductors
Product data sheet
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
FEATURES
QUICK REFERENCE DATA
• Forward current: 2 A
SYMBOL
PARAMETER
forward current
VALUE
UNIT
• Reverse voltage: 20 V
• Very low forward voltage
• Very small SMD package.
IF
2
A
V
VR
reverse voltage
20
PINNING
APPLICATIONS
PIN
1
DESCRIPTION
cathode
• Low voltage rectification
• High efficiency DC/DC conversion
• Switch mode power supply
• Inverse polarity protection
2
anode
• Low power consumption applications.
1
2
DESCRIPTION
Planar Maximum Efficiency General Application (MEGA)
Schottky barrier rectifier with an integrated guard ring for
stress protection, encapsulated in a SOD323 (SC-76) very
small SMD plastic package.
MHC682
The marking bar indicates the cathode.
MARKING
Fig.1 Simplified outline (SOD323; SC-76) and
symbol.
TYPE NUMBER
PMEG2020AEA
MARKING CODE
S3
RELATED PRODUCTS
TYPE NUMBER
DESCRIPTION
FEATURES
PMEG1020EA
2 A; 10 V ultra low VF MEGA Schottky barrier SOD323 package; lower reverse voltage; lower
rectifier forward voltage
1 A; 20 V ultra low VF MEGA Schottky barrier SOD323 package; lower forward current; lower
rectifier reverse current and diode capacitance
PMEG2010EA
ORDERING INFORMATION
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
PMEG2020AEA
−
plastic surface mounted package; 2 leads
SOD323
2004 Feb 26
2
NXP Semiconductors
Product data sheet
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134)
SYMBOL
VR
PARAMETER
CONDITIONS
MIN.
MAX.
20
UNIT
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
storage temperature
−
−
−
−
V
A
A
A
IF
Tsp ≤ 55 °C
2
IFRM
IFSM
Tstg
Tj
tp ≤ 1 ms; δ ≤ 0.25
7
t = 8 ms square wave
9
−65
−
+150
150
+150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−65
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
VALUE
UNIT
K/W
K/W
K/W
thermal resistance from junction to ambient
thermal resistance from junction to ambient
notes 1 and 2
notes 2 and 3
450
210
90
Rth(j-a)
Rth(j-s)
thermal resistance from junction to solder point note 4
Notes
1. Refer to SOD323 (SC-76) standard mounting conditions.
2. For Schottky barrier diodes thermal runaway has to be considered, as in some applications, the reverse power losses
PR are a significant part of the total power losses. Nomograms for determination of the reverse power losses PR and
IF (AV) rating will be available on request.
3. Device mounted on a on an FR4 printed-circuit board with copper clad 10 x 10 mm.
4. Soldering point of cathode tab.
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
VF
PARAMETER
forward voltage
CONDITIONS
see Fig.2; note 1
TYP.
MAX.
UNIT
IF = 0.01 A
IF = 0.1 A
200
220
mV
265
380
450
15
290
430
525
50
mV
mV
mV
μA
μA
μA
pF
IF = 1 A
IF = 2 A
IR
reverse current
VR = 5 V; see Fig.3
VR = 10 V
20
80
VR = 20 V
50
200
70
Cd
diode capacitance
VR = 5 V; f = 1 MHz; see Fig.4
55
Note
1. Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
2004 Feb 26
3
NXP Semiconductors
Product data sheet
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
GRAPHICAL DATA
MDB825
MDB823
2
10
4
10
handbook, halfpage
handbook, halfpage
I
I
R
F
(mA)
(mA)
(1)
10
3
10
(2)
(3)
(1)
(2)
(3)
(4)
1
2
10
−1
10
10
1
−2
10
−3
10
−1
10
0
0.1
0.2
0.3
0.4
0.5
V
(V)
F
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
−4
10
(4)
−5
10
Fig.2 Forward current as a function of forward
voltage; typical values.
0
5
10
15
20
V
(V)
R
(1) Tamb = 125 °C.
(2) Tamb = 85 °C.
(3) Tamb = 25 °C.
(4) Tamb = −40 °C.
MDB824
200
handbook, halfpage
C
d
(pF)
Fig.3 Reverse current as a function of reverse
voltage; typical values.
150
100
50
0
0
5
10
15
20
V
(V)
R
f = 1 MHz; Tamb = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
2004 Feb 26
4
NXP Semiconductors
Product data sheet
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
PACKAGE OUTLINE
Plastic surface-mounted package; 2 leads
SOD323
A
D
E
X
M
A
H
D
v
Q
1
2
b
p
A
A
1
(1)
c
L
p
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
UNIT
mm
b
c
D
E
H
L
p
Q
v
A
p
D
max
1.1
0.8
0.40 0.25
0.25 0.10
1.8
1.6
1.35
1.15
2.7
2.3
0.45 0.25
0.15 0.15
0.05
0.2
Note
1. The marking bar indicates the cathode
REFERENCES
JEDEC JEITA
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
03-12-17
06-03-16
SOD323
SC-76
2004 Feb 26
5
NXP Semiconductors
Product data sheet
20 V, 2 A very low VF MEGA Schottky
barrier rectifier in SOD323 (SC-76) package
PMEG2020AEA
DATA SHEET STATUS
DOCUMENT
STATUS(1)
PRODUCT
STATUS(2)
DEFINITION
Objective data sheet
Development
This document contains data from the objective specification for product
development.
Preliminary data sheet
Product data sheet
Qualification
Production
This document contains data from the preliminary specification.
This document contains the product specification.
Notes
1. Please consult the most recently issued document before initiating or completing a design.
2. The product status of device(s) described in this document may have changed since this document was published
and may differ in case of multiple devices. The latest product status information is available on the Internet at
URL http://www.nxp.com.
DISCLAIMERS
Limiting values ⎯ Stress above one or more limiting
values (as defined in the Absolute Maximum Ratings
System of IEC 60134) may cause permanent damage to
the device. Limiting values are stress ratings only and
operation of the device at these or any other conditions
above those given in the Characteristics sections of this
document is not implied. Exposure to limiting values for
extended periods may affect device reliability.
General ⎯ Information in this document is believed to be
accurate and reliable. However, NXP Semiconductors
does not give any representations or warranties,
expressed or implied, as to the accuracy or completeness
of such information and shall have no liability for the
consequences of use of such information.
Right to make changes ⎯ NXP Semiconductors
reserves the right to make changes to information
published in this document, including without limitation
specifications and product descriptions, at any time and
without notice. This document supersedes and replaces all
information supplied prior to the publication hereof.
Terms and conditions of sale ⎯ NXP Semiconductors
products are sold subject to the general terms and
conditions of commercial sale, as published at
http://www.nxp.com/profile/terms, including those
pertaining to warranty, intellectual property rights
infringement and limitation of liability, unless explicitly
otherwise agreed to in writing by NXP Semiconductors. In
case of any inconsistency or conflict between information
in this document and such terms and conditions, the latter
will prevail.
Suitability for use ⎯ NXP Semiconductors products are
not designed, authorized or warranted to be suitable for
use in medical, military, aircraft, space or life support
equipment, nor in applications where failure or malfunction
of an NXP Semiconductors product can reasonably be
expected to result in personal injury, death or severe
property or environmental damage. NXP Semiconductors
accepts no liability for inclusion and/or use of NXP
Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at
the customer’s own risk.
No offer to sell or license ⎯ Nothing in this document
may be interpreted or construed as an offer to sell products
that is open for acceptance or the grant, conveyance or
implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Export control ⎯ This document as well as the item(s)
described herein may be subject to export control
regulations. Export might require a prior authorization from
national authorities.
Applications ⎯ Applications that are described herein for
any of these products are for illustrative purposes only.
NXP Semiconductors makes no representation or
warranty that such applications will be suitable for the
specified use without further testing or modification.
Quick reference data ⎯ The Quick reference data is an
extract of the product data given in the Limiting values and
Characteristics sections of this document, and as such is
not complete, exhaustive or legally binding.
2004 Feb 26
6
NXP Semiconductors
Customer notification
This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
definitions and disclaimers. No changes were made to the technical content, except for package outline
drawings which were updated to the latest version.
Contact information
For additional information please visit: http://www.nxp.com
For sales offices addresses send e-mail to: salesaddresses@nxp.com
© NXP B.V. 2009
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
R76/01/pp7
Date of release: 2004 Feb 26
Document order number: 9397 750 11976
相关型号：
PMEG2020EH-115
DIODE 2 A, SILICON, RECTIFIER DIODE, PLASTIC, SOD-123F, SMD, 2 PIN, Rectifier Diode
NXP
PMEG2020EJ,115
PMEG2020EH; PMEG2020EJ - 20 V, 2 A very low V_F MEGA Schottky barrier rectifiers SOD 2-Pin
NXP
©2020 ICPDF网 联系我们和版权申明